| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NTMFSC004N08MC | onsemi |
Description: MOSFET N-CH 80V 86A/136A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V Power Dissipation (Max): 51W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFSC004N08MC | onsemi |
Description: MOSFET N-CH 80V 86A/136A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V Power Dissipation (Max): 51W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V |
на замовлення 2138 шт: термін постачання 21-31 дні (днів) |
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| NCV7805BDTRKG-IR01 | onsemi |
Description: LINEAR VOLTAGE REGULATOR, POSITI Current - Quiescent (Iq): 8 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 2V @ 1A PSRR: 68dB (120Hz) Part Status: Active Voltage - Output (Min/Fixed): 5V Supplier Device Package: DPAK Number of Regulators: 1 Voltage - Input (Max): 35V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| CAT24C02YGE-T3 | onsemi |
Description: IC EEPROM 2KBIT I2C 8TSSOPDigiKey Programmable: Not Verified Packaging: Bulk Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Obsolete Supplier Device Package: 8-TSSOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Memory Organization: 256 x 8 Access Time: 900 ns |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CAT24C02ZGI | onsemi |
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOPDigiKey Programmable: Not Verified Memory Organization: 256 x 8 Access Time: 900 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Obsolete Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 2Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Bulk |
на замовлення 5450 шт: термін постачання 21-31 дні (днів) |
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LV8860V-TLM-H | onsemi |
Description: IC MOTOR DRIVER 6V-34V 16SSOP |
товару немає в наявності |
Мінімальне замовлення: 312 шт В кошику од. на суму грн. | ||||||||||||||
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LV8860V-MPB-H | onsemi |
Description: IC MOTOR DRIVER 6V-34V 16SSOP |
товару немає в наявності |
Мінімальне замовлення: 254 шт В кошику од. на суму грн. | ||||||||||||||
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SB007-03Q-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 70MA 3MCPCurrent - Reverse Leakage @ Vr: 5 µA @ 15 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 3-MCP Current - Average Rectified (Io): 70mA Capacitance @ Vr, F: 3pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SB007-03Q-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 70MA 3MCPCurrent - Reverse Leakage @ Vr: 5 µA @ 15 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 3-MCP Current - Average Rectified (Io): 70mA Capacitance @ Vr, F: 3pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 3928 шт: термін постачання 21-31 дні (днів) |
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SB007T03C-TB-E | onsemi |
Description: DIODE 30V 0.07A Packaging: Bulk |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| SB007-03SPA-AC | onsemi |
Description: DIODE SCHOTTKY 30V 70MAPackaging: Bulk |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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SB007W03C-TB-E | onsemi |
Description: DIODE Packaging: Bulk |
на замовлення 276000 шт: термін постачання 21-31 дні (днів) |
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| SB007T03Q-TL-E | onsemi |
Description: 30 V, 70 MILLI AMP SCHOTTKY BARR Packaging: Bulk |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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| SB007W03Q-TL-E | onsemi |
Description: DIODE Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| FDMC6683PZ | onsemi |
Description: MOSFET P-CH 20V 40A 8MLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NIV6350MT1GEVB | onsemi |
Description: NIV6350MT1 EVAL BOARD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT7TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPart Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% Voltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT7TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNVoltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% |
на замовлення 28182 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT5TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPackage / Case: 10-WFDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% Voltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT5TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPart Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% Voltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 29177 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT6TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPart Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% Voltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NIS5420MT6TXG | onsemi |
Description: IC ELECTRONIC FUSE 10% 10WDFNPart Status: Active Supplier Device Package: 10-WDFN (3x3) Operating Temperature: -40°C ~ 150°C (TJ) Accuracy: ±10% Voltage - Input: 8V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3873 шт: термін постачання 21-31 дні (днів) |
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NIV6350MT2GEVB | onsemi |
Description: EVAL BOARD FOR NIV6350MT2Part Status: Active Embedded: No Primary Attributes: Auto-Retry Supplied Contents: Board(s) Utilized IC / Part: NIV6350 Type: Circuit Protection Function: Electronic Fuses (eFuse) Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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NTLLD4951NFTWG | onsemi |
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN Supplier Device Package: 8-WDFN (3x3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Drain to Source Voltage (Vdss): 30V Power - Max: 800mW, 810mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVTFS4823NWFTWG | onsemi |
Description: MOSFET N-CH 30V 13A 8WDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTHL120N60S5Z | onsemi |
Description: MOSFET N-CH 600V 22A TO3PNPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tj) Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
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LV8417CS-TE-L-H | onsemi |
Description: IC MOTOR DRIVER 2.7V-5.5V 9WLP |
товару немає в наявності |
Мінімальне замовлення: 350 шт В кошику од. на суму грн. | ||||||||||||||
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NDB7050L | onsemi |
Description: MOSFET N-CH 50V 75A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDB7050L | onsemi |
Description: MOSFET N-CH 50V 75A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDB7060L | onsemi |
Description: MOSFET N-CH 60V 75A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDB7050 | onsemi |
Description: MOSFET N-CH 50V 75A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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NDH8447 | onsemi |
Description: MOSFET P-CH 30V 4.4A SUPERSOT8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDH8447 | onsemi |
Description: MOSFET P-CH 30V 4.4A SUPERSOT8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDH8436 | onsemi |
Description: MOSFET N-CH 30V 5.8A SUPERSOT8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDH8436 | onsemi |
Description: MOSFET N-CH 30V 5.8A SUPERSOT8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FAN6392MPX | onsemi | Description: IC USB-PD3.0/PPS CTRLR 24WQFN |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FDC5612-G | onsemi |
Description: MOSFET N-CH 60V SUPERSOT6 Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5347AE-TD-E | onsemi |
Description: RF TRANS NPN 12V 4.7GHZ PCPSupplier Device Package: PCP Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Frequency - Transition: 4.7GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 150mA Power - Max: 1.3W Gain: 8dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 291 шт: термін постачання 21-31 дні (днів) |
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NTR1P02LT1H | onsemi |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLM120ATF | onsemi |
Description: MOSFET N-CH 100V 2.3A SOT223-4Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
на замовлення 1689 шт: термін постачання 21-31 дні (днів) |
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NJVMJB42CT4G | onsemi |
Description: TRANS PNP 100V 6A D2PAKPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 6 A Supplier Device Package: D2PAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Current - Collector Cutoff (Max): 700µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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NJVMJB42CT4G | onsemi |
Description: TRANS PNP 100V 6A D2PAKPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 6 A Supplier Device Package: D2PAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Current - Collector Cutoff (Max): 700µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 314 шт: термін постачання 21-31 дні (днів) |
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NCP11187A065PG | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIPVoltage - Breakdown: 800V Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 80% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube Power (Watts): 65 W Part Status: Active Control Features: EN Voltage - Start Up: 2.1 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 7-PDIP Voltage - Supply (Vcc/Vdd): 7.8V ~ 16V Topology: Flyback Output Isolation: Isolated |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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NTBGS2D5N06C | onsemi |
Description: POWER MOSFET, 60 V, 2.5 M?, 224Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 175µA Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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NTBGS2D5N06C | onsemi |
Description: POWER MOSFET, 60 V, 2.5 M?, 224Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 175µA Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
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CAT93C76VGI-T3 | onsemi |
Description: IC EEPROM 8KBIT MICROWIRE 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Memory Interface: Microwire Access Time: 100 ns Memory Organization: 512 x 16, 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MUN5116DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MUN5116DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 3840 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5334DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NSVMUN5334DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVMUN5111DW1T3G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5111DW1T3G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 79900 шт: термін постачання 21-31 дні (днів) |
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NCP662SQ15T1G | onsemi |
Description: IC REG LINEAR 1.5V 100MA SC82AB |
товару немає в наявності |
Мінімальне замовлення: 1741 шт В кошику од. на суму грн. | ||||||||||||||
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MM74C150N | onsemi |
Description: IC MULTIPLEXER 1 X 16:1 24DIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLJS3180PZTBG | onsemi |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SAC900RLG | onsemi | Description: THY C77 SPECIAL TRIAC |
товару немає в наявності |
Мінімальне замовлення: 802 шт В кошику од. на суму грн. | |||||||||||||||
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2N6038G | onsemi |
Description: TRANS NPN DARL 60V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 40 W |
на замовлення 11590 шт: термін постачання 21-31 дні (днів) |
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TL431CLPRPG | onsemi |
Description: IC VREF SHUNT 2.495V TO92-3Tolerance: ±2.2% Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NLX2G07AMUTCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-UDFN (1.45x1) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NLX2G07AMUTCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-UDFN (1.45x1) Part Status: Active |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| NTMFSC004N08MC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMFSC004N08MC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
Description: MOSFET N-CH 80V 86A/136A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 44A, 10V
Power Dissipation (Max): 51W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 40 V
на замовлення 2138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.16 грн |
| 10+ | 157.73 грн |
| 100+ | 110.56 грн |
| 500+ | 92.14 грн |
| NCV7805BDTRKG-IR01 |
Виробник: onsemi
Description: LINEAR VOLTAGE REGULATOR, POSITI
Current - Quiescent (Iq): 8 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A
PSRR: 68dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: DPAK
Number of Regulators: 1
Voltage - Input (Max): 35V
Description: LINEAR VOLTAGE REGULATOR, POSITI
Current - Quiescent (Iq): 8 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A
PSRR: 68dB (120Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: DPAK
Number of Regulators: 1
Voltage - Input (Max): 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 834+ | 46.18 грн |
| CAT24C02YGE-T3 |
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Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Packaging: Bulk
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Memory Organization: 256 x 8
Access Time: 900 ns
Description: IC EEPROM 2KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Packaging: Bulk
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Memory Organization: 256 x 8
Access Time: 900 ns
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1514+ | 13.30 грн |
| CAT24C02ZGI |
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Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
на замовлення 5450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1514+ | 13.30 грн |
| LV8860V-TLM-H |
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Виробник: onsemi
Description: IC MOTOR DRIVER 6V-34V 16SSOP
Description: IC MOTOR DRIVER 6V-34V 16SSOP
товару немає в наявності
Мінімальне замовлення: 312 шт
В кошику
од. на суму грн.
| LV8860V-MPB-H |
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Виробник: onsemi
Description: IC MOTOR DRIVER 6V-34V 16SSOP
Description: IC MOTOR DRIVER 6V-34V 16SSOP
товару немає в наявності
Мінімальне замовлення: 254 шт
В кошику
од. на суму грн.
| SB007-03Q-TL-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-MCP
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-MCP
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.31 грн |
| SB007-03Q-TL-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-MCP
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 70MA 3MCP
Current - Reverse Leakage @ Vr: 5 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 70 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-MCP
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 3928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.25 грн |
| 15+ | 19.86 грн |
| 100+ | 10.04 грн |
| 500+ | 7.68 грн |
| 1000+ | 5.70 грн |
| SB007T03C-TB-E |
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1902+ | 11.45 грн |
| SB007-03SPA-AC |
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на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 7.15 грн |
| SB007W03C-TB-E |
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 7.15 грн |
| SB007T03Q-TL-E |
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 10.73 грн |
| SB007W03Q-TL-E |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 7.15 грн |
| FDMC6683PZ |
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Виробник: onsemi
Description: MOSFET P-CH 20V 40A 8MLP
Description: MOSFET P-CH 20V 40A 8MLP
товару немає в наявності
В кошику
од. на суму грн.
| NIV6350MT1GEVB |
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Виробник: onsemi
Description: NIV6350MT1 EVAL BOARD
Description: NIV6350MT1 EVAL BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4856.23 грн |
| NIS5420MT7TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 48.54 грн |
| 6000+ | 44.99 грн |
| 9000+ | 43.50 грн |
| NIS5420MT7TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Description: IC ELECTRONIC FUSE 10% 10WDFN
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
на замовлення 28182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.76 грн |
| 10+ | 86.13 грн |
| 100+ | 68.53 грн |
| 500+ | 54.42 грн |
| 1000+ | 46.18 грн |
| NIS5420MT5TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Description: IC ELECTRONIC FUSE 10% 10WDFN
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 54.20 грн |
| 6000+ | 50.26 грн |
| NIS5420MT5TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 29177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.77 грн |
| 10+ | 102.51 грн |
| 100+ | 82.34 грн |
| 500+ | 63.49 грн |
| 1000+ | 52.60 грн |
| NIS5420MT6TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 53.74 грн |
| NIS5420MT6TXG |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC ELECTRONIC FUSE 10% 10WDFN
Part Status: Active
Supplier Device Package: 10-WDFN (3x3)
Operating Temperature: -40°C ~ 150°C (TJ)
Accuracy: ±10%
Voltage - Input: 8V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.06 грн |
| 10+ | 72.34 грн |
| 100+ | 57.33 грн |
| 500+ | 48.61 грн |
| NIV6350MT2GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NIV6350MT2
Part Status: Active
Embedded: No
Primary Attributes: Auto-Retry
Supplied Contents: Board(s)
Utilized IC / Part: NIV6350
Type: Circuit Protection
Function: Electronic Fuses (eFuse)
Packaging: Bulk
Description: EVAL BOARD FOR NIV6350MT2
Part Status: Active
Embedded: No
Primary Attributes: Auto-Retry
Supplied Contents: Board(s)
Utilized IC / Part: NIV6350
Type: Circuit Protection
Function: Electronic Fuses (eFuse)
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4442.11 грн |
| NTLLD4951NFTWG |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Supplier Device Package: 8-WDFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW, 810mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bulk
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Supplier Device Package: 8-WDFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW, 810mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 204+ | 97.10 грн |
| NVTFS4823NWFTWG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 13A 8WDFN
Description: MOSFET N-CH 30V 13A 8WDFN
товару немає в наявності
В кошику
од. на суму грн.
| NTHL120N60S5Z |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 11.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2088 pF @ 400 V
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.39 грн |
| 10+ | 315.09 грн |
| 100+ | 229.59 грн |
| 500+ | 181.28 грн |
| 1000+ | 180.87 грн |
| LV8417CS-TE-L-H |
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Виробник: onsemi
Description: IC MOTOR DRIVER 2.7V-5.5V 9WLP
Description: IC MOTOR DRIVER 2.7V-5.5V 9WLP
товару немає в наявності
Мінімальне замовлення: 350 шт
В кошику
од. на суму грн.
| NDB7050L |
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Виробник: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Description: MOSFET N-CH 50V 75A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| NDB7050L |
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Виробник: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Description: MOSFET N-CH 50V 75A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| NDB7060L |
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Виробник: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Description: MOSFET N-CH 60V 75A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| NDB7050 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NDH8447 |
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Виробник: onsemi
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
товару немає в наявності
В кошику
од. на суму грн.
| NDH8447 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
Description: MOSFET P-CH 30V 4.4A SUPERSOT8
товару немає в наявності
В кошику
од. на суму грн.
| NDH8436 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
товару немає в наявності
В кошику
од. на суму грн.
| NDH8436 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
Description: MOSFET N-CH 30V 5.8A SUPERSOT8
товару немає в наявності
В кошику
од. на суму грн.
| FAN6392MPX |
Виробник: onsemi
Description: IC USB-PD3.0/PPS CTRLR 24WQFN
Description: IC USB-PD3.0/PPS CTRLR 24WQFN
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 335+ | 65.42 грн |
| FDC5612-G |
Виробник: onsemi
Description: MOSFET N-CH 60V SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5347AE-TD-E |
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Виробник: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Supplier Device Package: PCP
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 4.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1.3W
Gain: 8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 12V 4.7GHZ PCP
Supplier Device Package: PCP
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 4.7GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 1.3W
Gain: 8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.20 грн |
| 10+ | 39.88 грн |
| 100+ | 26.01 грн |
| NTR1P02LT1H |
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Виробник: onsemi
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
товару немає в наявності
В кошику
од. на суму грн.
| IRLM120ATF |
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Виробник: onsemi
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 2.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 1689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 899+ | 21.59 грн |
| NJVMJB42CT4G |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 6A D2PAK
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: TRANS PNP 100V 6A D2PAK
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NJVMJB42CT4G |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 6A D2PAK
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: TRANS PNP 100V 6A D2PAK
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.02 грн |
| 10+ | 90.58 грн |
| 100+ | 61.51 грн |
| NCP11187A065PG |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Breakdown: 800V
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 65 W
Part Status: Active
Control Features: EN
Voltage - Start Up: 2.1 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 7.8V ~ 16V
Topology: Flyback
Output Isolation: Isolated
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Breakdown: 800V
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 65 W
Part Status: Active
Control Features: EN
Voltage - Start Up: 2.1 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 7-PDIP
Voltage - Supply (Vcc/Vdd): 7.8V ~ 16V
Topology: Flyback
Output Isolation: Isolated
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.20 грн |
| 10+ | 131.49 грн |
| 25+ | 120.29 грн |
| 100+ | 101.35 грн |
| 250+ | 95.85 грн |
| 500+ | 92.53 грн |
| 1000+ | 88.33 грн |
| NTBGS2D5N06C |
![]() |
Виробник: onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 175µA
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 175µA
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBGS2D5N06C |
![]() |
Виробник: onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 175µA
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 175µA
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 446.44 грн |
| 10+ | 290.11 грн |
| 100+ | 210.95 грн |
| CAT93C76VGI-T3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 512 x 16, 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 100 ns
Memory Organization: 512 x 16, 1K x 8
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1397+ | 13.85 грн |
| MUN5116DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MUN5116DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS PREBIAS 2PNP 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 3840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.71 грн |
| 15+ | 19.86 грн |
| 100+ | 11.21 грн |
| 500+ | 6.97 грн |
| 1000+ | 5.35 грн |
| NSVMUN5334DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSVMUN5334DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5111DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.29 грн |
| 20000+ | 2.88 грн |
| 30000+ | 2.73 грн |
| 50000+ | 2.41 грн |
| 70000+ | 2.32 грн |
| NSVMUN5111DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 79900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.24 грн |
| 27+ | 11.27 грн |
| 100+ | 7.03 грн |
| 500+ | 4.86 грн |
| 1000+ | 4.29 грн |
| 2000+ | 3.81 грн |
| 5000+ | 3.24 грн |
| NCP662SQ15T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.5V 100MA SC82AB
Description: IC REG LINEAR 1.5V 100MA SC82AB
товару немає в наявності
Мінімальне замовлення: 1741 шт
В кошику
од. на суму грн.
| MM74C150N |
![]() |
Виробник: onsemi
Description: IC MULTIPLEXER 1 X 16:1 24DIP
Description: IC MULTIPLEXER 1 X 16:1 24DIP
товару немає в наявності
В кошику
од. на суму грн.
| NTLJS3180PZTBG |
![]() |
Виробник: onsemi
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1603+ | 13.64 грн |
| SAC900RLG |
Виробник: onsemi
Description: THY C77 SPECIAL TRIAC
Description: THY C77 SPECIAL TRIAC
товару немає в наявності
Мінімальне замовлення: 802 шт
В кошику
од. на суму грн.
| 2N6038G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Description: TRANS NPN DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
на замовлення 11590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 810+ | 27.26 грн |
| TL431CLPRPG |
![]() |
Виробник: onsemi
Description: IC VREF SHUNT 2.495V TO92-3
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 2.495V TO92-3
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 9.79 грн |
| 4000+ | 9.13 грн |
| NLX2G07AMUTCG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.45x1)
Part Status: Active
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.45x1)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NLX2G07AMUTCG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.45x1)
Part Status: Active
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-UDFN (1.45x1)
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.26 грн |
| 10+ | 30.83 грн |
| 25+ | 28.26 грн |
| 100+ | 19.73 грн |
| 250+ | 17.88 грн |
| 500+ | 14.80 грн |

































