Фото | Назва | Виробник | Інформація |
Доступність |
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TN5D41A-HB11-E | onsemi | Description: IC REG BUCK 5V 5A TO220FL |
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TN5D51A-R-HCC11-E | onsemi |
Description: IC REG BUCK 12V 5A TO220FL Packaging: Tube Package / Case: TO-220-5 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -10°C ~ 85°C Output Configuration: Positive Frequency - Switching: 150kHz Voltage - Input (Max): 48V Topology: Buck Supplier Device Package: TO-220F5I5H-HB Synchronous Rectifier: No Voltage - Input (Min): 20V Voltage - Output (Min/Fixed): 12V Part Status: Obsolete |
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TN8D51A-HB11-E | onsemi | Description: IC REG BUCK 12V 8A TO220FL |
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TN8D41A-HB11-E | onsemi | Description: IC REG BUCK 5V 8A TO220FL |
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TY40470R2 | onsemi |
Description: IC SUPERVISOR ANA UNDERVOLT DET Packaging: Bulk Part Status: Active |
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NSS20500UW3TBG | onsemi | Description: TRANS PNP 20V 5A 3WDFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSS20500UW3TBG | onsemi | Description: TRANS PNP 20V 5A 3WDFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SK4065-DL-1EX | onsemi |
Description: 2SK4065 - MOSFET N-CHANNEL 75V T Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Supplier Device Package: TO-263-2 Part Status: Active Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V |
на замовлення 6280 шт: термін постачання 21-31 дні (днів) |
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2SK4084LS | onsemi |
Description: 2SK4084LS - MOSFET, T14A, 500V, Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta), 37W (Tc) Supplier Device Package: TO-220FI(LS) Part Status: Active Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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2SK443-6-TB-E-ON | onsemi |
Description: PNP/NPN EPITAXIAL PLANAR SILICON Packaging: Bulk |
на замовлення 18333 шт: термін постачання 21-31 дні (днів) |
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2SK4067-N-TL-E | onsemi |
Description: NCH 4V DRIVE SERIES Packaging: Bulk Part Status: Active |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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2SK436-19-TB-E | onsemi |
Description: NCH T-FET Packaging: Bulk Part Status: Active |
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SI9936DY | onsemi |
Description: MOSFET 2N-CH 30V 5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
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NTH4L067N65S3H | onsemi |
Description: SUPERFET3 FAST 67MOHM TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZNSQA6V8AW5T2G | onsemi |
Description: TVS DIODE 5VWM 13VC SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 20W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3079 шт: термін постачання 21-31 дні (днів) |
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NOIV1SE025KA-GTI | onsemi |
Description: IC IMAGE SENSOR 25MP 355UPGA Packaging: Tray Package / Case: 355-BSPGA, Window Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V Pixel Size: 4.5µm x 4.5µm Active Pixel Array: 5120H x 5120V Supplier Device Package: 355-µPGA Part Status: Active Frames per Second: 53 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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NTMFD0D9N02P1E | onsemi |
Description: IFET 25V 0.9 MOHM PQFN56MP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 1.04W (Ta) Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
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FDMS86263P-23507X | onsemi |
Description: FET -150V 53.0 MOHM PQFN56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V |
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2SA1770S-AN | onsemi |
Description: TRANS PNP 160V 1.5A 3NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NMP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD Packaging: Bulk Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1875 шт: термін постачання 21-31 дні (днів) |
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CNY173SVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CAV25512YE-GT3 | onsemi |
Description: IC EEPROM 512KBIT SPI 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3262 шт: термін постачання 21-31 дні (днів) |
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NDUL03N150CG | onsemi |
Description: MOSFET N-CH 1500V 2.5A TO3P Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Supplier Device Package: TO-3P(L) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V |
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 25 V |
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SB01-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 100MA 3CP Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 25 V |
на замовлення 2111 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NSVDTC123JET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FW261-TL-E | onsemi | Description: NCH+NCH 4V DRIVE SERIES |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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MCH6661-TL-W | onsemi | Description: MOSFET 2N-CH 30V 1.8A SOT363 |
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MC100LVEP210FAG | onsemi |
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP Packaging: Bulk Package / Case: 32-LQFP Number of Circuits: 2 Mounting Type: Surface Mount Output: ECL, PECL Type: Fanout Buffer (Distribution) Input: ECL, HSTL, LVDS, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.8V Ratio - Input:Output: 1:5 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-LQFP (7x7) Part Status: Active Frequency - Max: 3 GHz |
на замовлення 14492 шт: термін постачання 21-31 дні (днів) |
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FQU1N80TU | onsemi |
Description: MOSFET N-CH 800V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
на замовлення 4772 шт: термін постачання 21-31 дні (днів) |
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MMBT5401-D87Z | onsemi |
Description: TRANS PNP 150V 0.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
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MMBT5401-D87Z | onsemi |
Description: TRANS PNP 150V 0.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
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NCV97311MW50AR2G | onsemi |
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.1V ~ 18V Frequency - Switching: 2MHz ~ 2.6MHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: 32-QFNW (5x5) Voltage/Current - Output 1: 5V, 3A Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Active Number of Outputs: 4 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCV97311MW50AR2G | onsemi |
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.1V ~ 18V Frequency - Switching: 2MHz ~ 2.6MHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: 32-QFNW (5x5) Voltage/Current - Output 1: 5V, 3A Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Active Number of Outputs: 4 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SURS8205T3G-VF01 | onsemi | Description: DIODE GEN PURP 50V 2A SMB |
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NVD5863NLT4G | onsemi |
Description: MOSFET N-CH 60V 14.9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVD5863NLT4G | onsemi |
Description: MOSFET N-CH 60V 14.9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVD5806NT4G | onsemi |
Description: MOSFET N-CH 40V 33A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVD5807NT4G | onsemi |
Description: MOSFET N-CH 40V 23A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V Qualification: AEC-Q101 |
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NVD5807NT4G | onsemi |
Description: MOSFET N-CH 40V 23A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V Qualification: AEC-Q101 |
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SVD5865NLT4G | onsemi |
Description: MOSFET N-CH 60V 10A/46A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
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NVD5802NT4G-TB01 | onsemi |
Description: MOSFET N-CH 40V 16.4A/101A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V Qualification: AEC-Q101 |
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SVD5806NT4G | onsemi |
Description: MOSFET N-CH 40V 33A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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NVD5863NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 60V 14.9A/82A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
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NVD5802NT4G-VF01 | onsemi |
Description: MOSFET N-CH 40V 16.4A/101A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V Qualification: AEC-Q101 |
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LC70301W-UIH-H | onsemi |
Description: LC70301W -LOW POWER CONSUMPTION Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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LC88F52H0AU-CH-H | onsemi | Description: MICROCONTROLLER, 16-BIT, FLASH, |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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LC709209FXE-01TBG | onsemi |
Description: BATTERY FUEL GAUGE FOR 1-CELL LI Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Fuel Gauge Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 12-WLCSP (1.48x1.91) Part Status: Active |
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LC709209FXE-01TBG | onsemi |
Description: BATTERY FUEL GAUGE FOR 1-CELL LI Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Fuel Gauge Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 12-WLCSP (1.48x1.91) Part Status: Active |
на замовлення 4465 шт: термін постачання 21-31 дні (днів) |
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NCD57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 10ns Grade: Automotive Part Status: Active Number of Channels: 2 Voltage - Output Supply: 32V Qualification: AEC-Q100 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCD57252DWR2G | onsemi |
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 5000Vrms Approval Agency: VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 12ns, 10ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Pulse Width Distortion (Max): 10ns Grade: Automotive Part Status: Active Number of Channels: 2 Voltage - Output Supply: 32V Qualification: AEC-Q100 |
на замовлення 13547 шт: термін постачання 21-31 дні (днів) |
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NVTYS005N06CLTWG | onsemi | Description: T6 60V N-CH LL IN LFPAK33 |
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NCP45790IMN24RTWG | onsemi |
Description: SOLITUDE 790 MCM Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 5.6mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 24V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 14-DFN (4x4) Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO Part Status: Active |
на замовлення 21744 шт: термін постачання 21-31 дні (днів) |
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NCP435FCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 65mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WLCSP (0.96x0.96) Part Status: Last Time Buy |
на замовлення 3551 шт: термін постачання 21-31 дні (днів) |
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NCP45750IMN24TWG | onsemi | Description: 750 MCM |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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NCP45760IMN24RTWG | onsemi | Description: 760 MCM |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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NCP4625HSN33T1G | onsemi |
Description: NCP4625 - LINEAR VOLTAGE REGULAT Packaging: Bulk Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.85V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 180480 шт: термін постачання 21-31 дні (днів) |
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TN5D51A-R-HCC11-E |
Виробник: onsemi
Description: IC REG BUCK 12V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Description: IC REG BUCK 12V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
товар відсутній
TY40470R2 |
товар відсутній
NSS20500UW3TBG |
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Description: TRANS PNP 20V 5A 3WDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 15.09 грн |
NSS20500UW3TBG |
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Description: TRANS PNP 20V 5A 3WDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 42.65 грн |
10+ | 35.12 грн |
100+ | 26.25 грн |
500+ | 19.36 грн |
1000+ | 14.96 грн |
2SK4065-DL-1EX |
Виробник: onsemi
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
на замовлення 6280 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
124+ | 158.86 грн |
2SK4084LS |
Виробник: onsemi
Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
231+ | 92.42 грн |
2SK443-6-TB-E-ON |
на замовлення 18333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.6 грн |
2SK4067-N-TL-E |
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2049+ | 10.09 грн |
2SK436-19-TB-E |
товар відсутній
SI9936DY |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
NTH4L067N65S3H |
Виробник: onsemi
Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
товар відсутній
SZNSQA6V8AW5T2G |
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.22 грн |
SZNSQA6V8AW5T2G |
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3079 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.57 грн |
13+ | 22.8 грн |
100+ | 13.65 грн |
500+ | 11.86 грн |
1000+ | 8.07 грн |
NOIV1SE025KA-GTI |
Виробник: onsemi
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Part Status: Active
Frames per Second: 53
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Part Status: Active
Frames per Second: 53
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 299014.87 грн |
NTMFD0D9N02P1E |
Виробник: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
товар відсутній
FDMS86263P-23507X |
Виробник: onsemi
Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
товар відсутній
2SA1770S-AN |
Виробник: onsemi
Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
товар відсутній
CNY173SVM |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 47.63 грн |
10+ | 30.05 грн |
100+ | 19.89 грн |
1000+ | 14.41 грн |
CNY173SVM |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 335 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.92 грн |
10+ | 30.12 грн |
100+ | 19.89 грн |
CAV25512YE-GT3 |
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 55.15 грн |
CAV25512YE-GT3 |
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3262 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.2 грн |
10+ | 68.94 грн |
25+ | 67.01 грн |
50+ | 62.56 грн |
100+ | 55.92 грн |
250+ | 55.76 грн |
500+ | 54.02 грн |
1000+ | 51.73 грн |
NDUL03N150CG |
Виробник: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
товар відсутній
SB01-05C-TB-E |
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
товар відсутній
SB01-05C-TB-E |
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
на замовлення 2111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.17 грн |
16+ | 18.21 грн |
100+ | 10.93 грн |
500+ | 9.5 грн |
1000+ | 6.46 грн |
NSVDTC123JET1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.31 грн |
6000+ | 3.85 грн |
NSVDTC123JET1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
17+ | 16.91 грн |
100+ | 8.27 грн |
500+ | 6.47 грн |
1000+ | 4.5 грн |
FW261-TL-E |
Виробник: onsemi
Description: NCH+NCH 4V DRIVE SERIES
Description: NCH+NCH 4V DRIVE SERIES
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2885+ | 6.86 грн |
MC100LVEP210FAG |
Виробник: onsemi
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
на замовлення 14492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 983.89 грн |
FQU1N80TU |
Виробник: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
на замовлення 4772 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 66.82 грн |
10+ | 52.37 грн |
100+ | 40.75 грн |
500+ | 32.41 грн |
1000+ | 26.4 грн |
2000+ | 24.85 грн |
MMBT5401-D87Z |
Виробник: onsemi
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
товар відсутній
MMBT5401-D87Z |
Виробник: onsemi
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
товар відсутній
NCV97311MW50AR2G |
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 193.4 грн |
NCV97311MW50AR2G |
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 400.24 грн |
10+ | 346.26 грн |
25+ | 327.36 грн |
100+ | 266.26 грн |
250+ | 252.61 грн |
500+ | 226.67 грн |
1000+ | 188.03 грн |
2500+ | 178.63 грн |
NVD5863NLT4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVD5863NLT4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVD5806NT4G |
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVD5807NT4G |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVD5807NT4G |
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SVD5865NLT4G |
Виробник: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
NVD5802NT4G-TB01 |
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
товар відсутній
SVD5806NT4G |
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
NVD5863NLT4G-VF01 |
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
товар відсутній
NVD5802NT4G-VF01 |
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
товар відсутній
LC70301W-UIH-H |
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
267+ | 73.49 грн |
LC88F52H0AU-CH-H |
Виробник: onsemi
Description: MICROCONTROLLER, 16-BIT, FLASH,
Description: MICROCONTROLLER, 16-BIT, FLASH,
на замовлення 90 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
42+ | 499.17 грн |
LC709209FXE-01TBG |
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
товар відсутній
LC709209FXE-01TBG |
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
на замовлення 4465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.04 грн |
10+ | 148.89 грн |
25+ | 140.45 грн |
100+ | 105.45 грн |
250+ | 92.27 грн |
500+ | 89.64 грн |
1000+ | 70.01 грн |
2500+ | 67.42 грн |
NCD57252DWR2G |
Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Qualification: AEC-Q100
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 103.05 грн |
2000+ | 95.5 грн |
5000+ | 92.52 грн |
NCD57252DWR2G |
Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Qualification: AEC-Q100
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Grade: Automotive
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Qualification: AEC-Q100
на замовлення 13547 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 205.45 грн |
10+ | 177.58 грн |
25+ | 167.86 грн |
100+ | 129.54 грн |
250+ | 116.23 грн |
500+ | 112.03 грн |
NCP45790IMN24RTWG |
Виробник: onsemi
Description: SOLITUDE 790 MCM
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: SOLITUDE 790 MCM
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 21744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 268.01 грн |
10+ | 231.87 грн |
25+ | 219.2 грн |
100+ | 169.14 грн |
250+ | 151.77 грн |
500+ | 146.28 грн |
1000+ | 119.6 грн |
NCP435FCT2G |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.96x0.96)
Part Status: Last Time Buy
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.96x0.96)
Part Status: Last Time Buy
на замовлення 3551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.68 грн |
10+ | 31.63 грн |
25+ | 29.68 грн |
100+ | 21.12 грн |
250+ | 17.98 грн |
500+ | 17.08 грн |
1000+ | 12.82 грн |
NCP45750IMN24TWG |
Виробник: onsemi
Description: 750 MCM
Description: 750 MCM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 214.69 грн |
10+ | 186.14 грн |
25+ | 175.99 грн |
100+ | 143.15 грн |
250+ | 135.81 грн |
500+ | 121.86 грн |
1000+ | 101.09 грн |
NCP45760IMN24RTWG |
Виробник: onsemi
Description: 760 MCM
Description: 760 MCM
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.16 грн |
10+ | 178.61 грн |
25+ | 168.49 грн |
100+ | 134.7 грн |
250+ | 126.48 грн |
500+ | 110.67 грн |
1000+ | 90.19 грн |
NCP4625HSN33T1G |
Виробник: onsemi
Description: NCP4625 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.85V @ 300mA
Protection Features: Over Current, Over Temperature
Description: NCP4625 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.85V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 180480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
784+ | 25.57 грн |