Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11463) > Сторінка 50 з 192
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MBR6150_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 76000 шт В кошику од. на суму грн. | ||||||||||||
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MBR650F_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 50V 6A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 76000 шт В кошику од. на суму грн. | ||||||||||||
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MBR690_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 90V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
товару немає в наявності |
Мінімальне замовлення: 76000 шт В кошику од. на суму грн. | ||||||||||||
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MBR645_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 45V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 76000 шт В кошику од. на суму грн. | ||||||||||||
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MBR680_T0_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 80V 6A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 76000 шт В кошику од. на суму грн. | ||||||||||||
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BZT52-C5V1-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 5.1V 410MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 800 mV Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BZT52-C5V1-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 5.1V 410MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 800 mV Qualification: AEC-Q101 |
на замовлення 1823 шт: термін постачання 21-31 дні (днів) |
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PJL9452A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODESupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJW3N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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PJW3N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 12480 шт: термін постачання 21-31 дні (днів) |
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PJQ5476AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJQ5476AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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PJD25N10A_L2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJD25N10A_L2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V |
на замовлення 2321 шт: термін постачання 21-31 дні (днів) |
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| PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PJQ5474A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJL9458AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJL9458AL_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ4476AP-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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PJQ4476AP-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 2W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4868 шт: термін постачання 21-31 дні (днів) |
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PJW5N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJW5N10A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJW5N10-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta), 8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJW5N10-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta), 8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJW5N10_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJW5N10_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5476AL-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5476AL-AU_R2_000A1 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 3152 шт: термін постачання 21-31 дні (днів) |
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PJQ4476AP_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEFET Type: N-Channel Technology: MOSFET (Metal Oxide) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 62W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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PJQ4476AP_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODERds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 62W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJA3476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJA3476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
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PJQ5472A_R2_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODEDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJC7476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJC7476_R1_00001 | Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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BAV19W_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 100V 200MA SOD123Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAV19W_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 100V 200MA SOD123Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) |
на замовлення 1187 шт: термін постачання 21-31 дні (днів) |
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SB130AS_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKYCurrent - Reverse Leakage @ Vr: 45 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SB130AS_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKYPackaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 45 µA @ 30 V |
на замовлення 2754 шт: термін постачання 21-31 дні (днів) |
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SBA130AS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SBA130AS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 20983 шт: термін постачання 21-31 дні (днів) |
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SS0520_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 20V 500MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 10 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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SS0520_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 20V 500MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 10 V |
на замовлення 51029 шт: термін постачання 21-31 дні (днів) |
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SS1040L_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 220 µA @ 40 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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SS1040L_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 220 µA @ 40 V |
на замовлення 29327 шт: термін постачання 21-31 дні (днів) |
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MMSZ5241B_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 11V 500MW SOD123Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 22 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5241B_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 11V 500MW SOD123Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 22 Ohms Voltage - Zener (Nom) (Vz): 11 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 9954 шт: термін постачання 21-31 дні (днів) |
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MMSZ5252A_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 24V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | ||||||||||||
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MMSZ5252A_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 24V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
на замовлення 5489 шт: термін постачання 21-31 дні (днів) |
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MMSZ5254B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENERTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5254B_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENERTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 5708 шт: термін постачання 21-31 дні (днів) |
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BZT52-C16-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 16V 410MW SOD123Current - Reverse Leakage @ Vr: 100 nA @ 12 V Power - Max: 410 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 16 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BZT52-C16-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 16V 410MW SOD123Current - Reverse Leakage @ Vr: 100 nA @ 12 V Power - Max: 410 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 16 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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SBA120AS_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKY |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SBA120AS_R1_00001 | Panjit International Inc. |
Description: SOD-123, SKY |
на замовлення 3762 шт: термін постачання 21-31 дні (днів) |
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SS1040_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SS1040_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 1A SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 5956 шт: термін постачання 21-31 дні (днів) |
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SS1030_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SS1030_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 3939 шт: термін постачання 21-31 дні (днів) |
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BAS100AS-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE SCHOTTKY 100V 500MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 21pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| MBR6150_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику
од. на суму грн.
| MBR650F_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику
од. на суму грн.
| MBR690_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику
од. на суму грн.
| MBR645_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику
од. на суму грн.
| MBR680_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику
од. на суму грн.
| BZT52-C5V1-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52-C5V1-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
на замовлення 1823 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 57+ | 5.37 грн |
| 100+ | 3.27 грн |
| 500+ | 2.21 грн |
| 1000+ | 1.93 грн |
| PJL9452A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJW3N10A_R2_00001 |
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Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 12.08 грн |
| 5000+ | 10.88 грн |
| PJW3N10A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 12480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 11+ | 28.14 грн |
| 100+ | 21.01 грн |
| 500+ | 15.50 грн |
| 1000+ | 11.97 грн |
| PJQ5476AL_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJQ5476AL_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 99.77 грн |
| 10+ | 60.14 грн |
| 100+ | 39.77 грн |
| PJD25N10A_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJD25N10A_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.70 грн |
| 10+ | 42.82 грн |
| 100+ | 28.00 грн |
| 500+ | 20.31 грн |
| 1000+ | 18.39 грн |
| PJQ5474A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJQ5474A_R2_00001 |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
В кошику
од. на суму грн.
| PJL9458AL_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJL9458AL_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4476AP-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PJQ4476AP-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.41 грн |
| 10+ | 72.47 грн |
| 100+ | 48.38 грн |
| 500+ | 35.68 грн |
| 1000+ | 32.55 грн |
| 2000+ | 29.92 грн |
| PJW5N10A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJW5N10A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| PJW5N10-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJW5N10-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| PJW5N10_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJW5N10_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5476AL-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 28.14 грн |
| PJQ5476AL-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 3152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.62 грн |
| 10+ | 65.43 грн |
| 100+ | 43.43 грн |
| 500+ | 31.90 грн |
| 1000+ | 29.05 грн |
| PJQ4476AP_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 100V N-CHANNEL ENHANCEMENT MODE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PJQ4476AP_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Description: 100V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 62W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| PJA3476_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJA3476_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 19+ | 16.19 грн |
| 100+ | 8.17 грн |
| 500+ | 6.26 грн |
| 1000+ | 4.64 грн |
| PJQ5472A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: 100V N-CHANNEL ENHANCEMENT MODE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJC7476_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJC7476_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Description: 100V N-CHANNEL ENHANCEMENT MODE
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 13+ | 24.36 грн |
| 100+ | 15.20 грн |
| 500+ | 9.76 грн |
| 1000+ | 7.51 грн |
| BAV19W_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAV19W_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE STANDARD 100V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 48+ | 6.43 грн |
| 100+ | 3.96 грн |
| 500+ | 2.69 грн |
| 1000+ | 2.36 грн |
| SB130AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SOD-123, SKY
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Description: SOD-123, SKY
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SB130AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SOD-123, SKY
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
Description: SOD-123, SKY
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 45 µA @ 30 V
на замовлення 2754 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 19+ | 16.26 грн |
| 100+ | 10.23 грн |
| 500+ | 7.13 грн |
| 1000+ | 6.33 грн |
| SBA130AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.67 грн |
| 6000+ | 2.29 грн |
| 9000+ | 2.24 грн |
| 15000+ | 2.02 грн |
| SBA130AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 20983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 37+ | 8.32 грн |
| 100+ | 5.43 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.32 грн |
| SS0520_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.18 грн |
| 6000+ | 1.88 грн |
| 9000+ | 1.66 грн |
| 15000+ | 1.55 грн |
| 21000+ | 1.54 грн |
| SS0520_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 10 V
на замовлення 51029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.21 грн |
| 45+ | 6.73 грн |
| 100+ | 5.53 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.35 грн |
| SS1040L_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.97 грн |
| 6000+ | 2.62 грн |
| 9000+ | 2.30 грн |
| 15000+ | 2.08 грн |
| 21000+ | 2.01 грн |
| SS1040L_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 29327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.57 грн |
| 38+ | 8.02 грн |
| 100+ | 5.27 грн |
| 500+ | 3.95 грн |
| 1000+ | 3.60 грн |
| MMSZ5241B_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 1.74 грн |
| 6000+ | 1.55 грн |
| 9000+ | 1.42 грн |
| MMSZ5241B_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 11V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 9954 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 65+ | 4.69 грн |
| 124+ | 2.45 грн |
| MMSZ5252A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 24V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE ZENER 24V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| MMSZ5252A_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE ZENER 24V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE ZENER 24V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
на замовлення 5489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.21 грн |
| 51+ | 5.98 грн |
| 100+ | 3.66 грн |
| 500+ | 2.48 грн |
| 1000+ | 2.18 грн |
| MMSZ5254B_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.29 грн |
| MMSZ5254B_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SOD-123, ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 5708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 34+ | 9.08 грн |
| 100+ | 4.89 грн |
| 500+ | 3.60 грн |
| 1000+ | 2.50 грн |
| BZT52-C16-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: DIODE ZENER 16V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 16V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52-C16-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 16V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 16V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 65+ | 4.69 грн |
| 124+ | 2.45 грн |
| 500+ | 2.18 грн |
| 1000+ | 2.06 грн |
| SBA120AS_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOD-123, SKY
Description: SOD-123, SKY
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.35 грн |
| SBA120AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SOD-123, SKY
Description: SOD-123, SKY
на замовлення 3762 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| 16+ | 19.52 грн |
| 100+ | 10.39 грн |
| 500+ | 6.41 грн |
| 1000+ | 4.36 грн |
| SS1040_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.78 грн |
| SS1040_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 5956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 37+ | 8.25 грн |
| 100+ | 5.08 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.05 грн |
| SS1030_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SS1030_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 3939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 37+ | 8.25 грн |
| 100+ | 5.10 грн |
| 500+ | 3.49 грн |
| 1000+ | 3.06 грн |
| BAS100AS-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.













