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P4KE400CA_R2_00001 P4KE400CA_R2_00001 Panjit International Inc. P4KE_SERIES.pdf Description: TVS DIODE 342VWM 548VC DO41
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Bidirectional Channels: 1
Supplier Device Package: DO-41
Voltage - Reverse Standoff (Typ): 342V
Current - Peak Pulse (10/1000µs): 700mA
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
товару немає в наявності
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BC817-16W_R1_00001 BC817-16W_R1_00001 Panjit International Inc. BC817-16W_SERIES.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16W_R1_00001 BC817-16W_R1_00001 Panjit International Inc. BC817-16W_SERIES.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
40+7.93 грн
67+4.58 грн
108+2.84 грн
Мінімальне замовлення: 40 шт
В кошику  од. на суму  грн.
BC817-16W-AU_R1_000A1 BC817-16W-AU_R1_000A1 Panjit International Inc. BC817-16W-AU_SERIES.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16W-AU_R1_000A1 BC817-16W-AU_R1_000A1 Panjit International Inc. BC817-16W-AU_SERIES.pdf Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1938 шт:
термін постачання 21-31 дні (днів)
31+10.31 грн
53+5.80 грн
100+3.60 грн
500+2.44 грн
1000+2.14 грн
Мінімальне замовлення: 31 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC817-16_R1_00001 Panjit International Inc. BC846BS-AU_BC847AS-AU.pdf Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.91 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC817-16_R1_00001 Panjit International Inc. BC846BS-AU_BC847AS-AU.pdf Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 4029 шт:
термін постачання 21-31 дні (днів)
23+14.27 грн
36+8.55 грн
100+5.29 грн
500+3.62 грн
1000+3.18 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
MBR680FCT_T0_00001 Panjit International Inc. Description: SCHOTTKY BARRIER RECTIFIERS
товару немає в наявності
В кошику  од. на суму  грн.
MBR650FCT_T0_00001 Panjit International Inc. Description: SCHOTTKY BARRIER RECTIFIERS
товару немає в наявності
В кошику  од. на суму  грн.
MBR690CT_T0_00001 MBR690CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 90V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200FCT_T0_00001 MBR6200FCT_T0_00001 Panjit International Inc. MBR640FCT_SERIES.pdf Description: DIODE ARR SCHOT 200V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6080PT_T0_00001 MBR6080PT_T0_00001 Panjit International Inc. MBR6040PT_SERIES.pdf Description: DIODE ARR SCHOTT 80V 60A TO247AD
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
товару немає в наявності
 Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR650CT_T0_00001 MBR650CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 50V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6040PT_T0_00001 MBR6040PT_T0_00001 Panjit International Inc. MBR6040PT_SERIES.pdf Description: DIODE ARR SCHOTT 40V 60A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 877 шт:
термін постачання 21-31 дні (днів)
2+226.78 грн
30+117.56 грн
60+105.49 грн
120+89.45 грн
510+74.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBR690FCT_T0_00001 Panjit International Inc. Description: SCHOTTKY BARRIER RECTIFIERS
товару немає в наявності
В кошику  од. на суму  грн.
MBR660CT_T0_00001 MBR660CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 60V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200CT_T0_00001 MBR6200CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 200V 6A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR640FCT_T0_00001 MBR640FCT_T0_00001 Panjit International Inc. MBR640FCT_SERIES.pdf Description: DIODE ARR SCHOTT 40V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6090PT_T0_00001 MBR6090PT_T0_00001 Panjit International Inc. MBR6040PT_SERIES.pdf Description: DIODE ARR SCHOTT 90V 60A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR640CT_T0_00001 MBR640CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 40V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR680CT_T0_00001 MBR680CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 80V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6050PT_T0_00001 MBR6050PT_T0_00001 Panjit International Inc. MBR6040PT_SERIES.pdf Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
товару немає в наявності
 Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR6150FCT_T0_00001 MBR6150FCT_T0_00001 Panjit International Inc. MBR640FCT_SERIES.pdf Description: DIODE ARR SCHOT 150V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR660FCT_T0_00001 MBR660FCT_T0_00001 Panjit International Inc. MBR640FCT_SERIES.pdf Description: DIODE ARR SCHOTT 60V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645FCT_T0_00001 MBR645FCT_T0_00001 Panjit International Inc. MBR640FCT_SERIES.pdf Description: DIODE ARR SCHOTT 45V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645CT_T0_00001 MBR645CT_T0_00001 Panjit International Inc. MBR640CT_SERIES.pdf Description: DIODE ARR SCHOTT 45V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645F_T0_00001 MBR645F_T0_00001 Panjit International Inc. MBR640F_SERIES.pdf Description: DIODE SCHOTTKY 45V 6A ITO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR650_T0_00001 MBR650_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 50V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR660_T0_00001 MBR660_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 60V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR690F_T0_00001 MBR690F_T0_00001 Panjit International Inc. MBR640F_SERIES.pdf Description: DIODE SCHOTTKY 90V 6A ITO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1822 шт:
термін постачання 21-31 дні (днів)
3+119.73 грн
50+54.96 грн
100+49.06 грн
500+36.32 грн
1000+33.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MBR640_T0_00001 MBR640_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 40V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200_T0_00001 MBR6200_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 200V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6150_T0_00001 MBR6150_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR650F_T0_00001 MBR650F_T0_00001 Panjit International Inc. MBR640F_SERIES.pdf Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR690_T0_00001 MBR690_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645_T0_00001 MBR645_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR680_T0_00001 MBR680_T0_00001 Panjit International Inc. MBR640_SERIES.pdf Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
товару немає в наявності
 Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
BZT52-C5V1-AU_R1_000A1 BZT52-C5V1-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BZT52-C5V1-AU_R1_000A1 BZT52-C5V1-AU_R1_000A1 Panjit International Inc. BZT52-C2V4-AU_SERIES.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJL9452A_R2_00001 PJL9452A_R2_00001 Panjit International Inc. PJL9452A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW3N10A_R2_00001 PJW3N10A_R2_00001 Panjit International Inc. PJW3N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+12.19 грн
5000+10.98 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW3N10A_R2_00001 PJW3N10A_R2_00001 Panjit International Inc. PJW3N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 12480 шт:
термін постачання 21-31 дні (днів)
10+34.10 грн
11+28.40 грн
100+21.21 грн
500+15.64 грн
1000+12.09 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
PJQ5476AL_R2_00001 PJQ5476AL_R2_00001 Panjit International Inc. PJQ5476AL.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5476AL_R2_00001 PJQ5476AL_R2_00001 Panjit International Inc. PJQ5476AL.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
4+100.70 грн
10+60.70 грн
100+40.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
PJD25N10A_L2_00001 PJD25N10A_L2_00001 Panjit International Inc. PJD25N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJD25N10A_L2_00001 PJD25N10A_L2_00001 Panjit International Inc. PJD25N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
5+71.36 грн
10+43.22 грн
100+28.27 грн
500+20.50 грн
1000+18.56 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
PJQ5474A_R2_00001 Panjit International Inc. Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5474A_R2_00001 Panjit International Inc. Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
В кошику  од. на суму  грн.
PJL9458AL_R2_00001 PJL9458AL_R2_00001 Panjit International Inc. PJL9458AL.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJL9458AL_R2_00001 PJL9458AL_R2_00001 Panjit International Inc. PJL9458AL.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4476AP-AU_R2_000A1 PJQ4476AP-AU_R2_000A1 Panjit International Inc. PJQ4476AP-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJQ4476AP-AU_R2_000A1 PJQ4476AP-AU_R2_000A1 Panjit International Inc. PJQ4476AP-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)
3+120.53 грн
10+73.15 грн
100+48.83 грн
500+36.02 грн
1000+32.86 грн
2000+30.20 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJW5N10A_R2_00001 PJW5N10A_R2_00001 Panjit International Inc. PJW5N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10A_R2_00001 PJW5N10A_R2_00001 Panjit International Inc. PJW5N10A.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N10-AU_R2_000A1 PJW5N10-AU_R2_000A1 Panjit International Inc. PJW5N10-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10-AU_R2_000A1 PJW5N10-AU_R2_000A1 Panjit International Inc. PJW5N10-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
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PJW5N10_R2_00001 PJW5N10_R2_00001 Panjit International Inc. PJW5N10.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10_R2_00001 PJW5N10_R2_00001 Panjit International Inc. PJW5N10.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
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PJQ5476AL-AU_R2_000A1 PJQ5476AL-AU_R2_000A1 Panjit International Inc. PJQ5476AL-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+28.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5476AL-AU_R2_000A1 PJQ5476AL-AU_R2_000A1 Panjit International Inc. PJQ5476AL-AU.pdf Description: 100V N-CHANNEL ENHANCEMENT MODE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 3152 шт:
термін постачання 21-31 дні (днів)
3+108.63 грн
10+66.05 грн
100+43.84 грн
500+32.20 грн
1000+29.32 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
P4KE400CA_R2_00001 P4KE_SERIES.pdf
P4KE400CA_R2_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 342VWM 548VC DO41
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Bidirectional Channels: 1
Supplier Device Package: DO-41
Voltage - Reverse Standoff (Typ): 342V
Current - Peak Pulse (10/1000µs): 700mA
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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BC817-16W_R1_00001 BC817-16W_SERIES.pdf
BC817-16W_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16W_R1_00001 BC817-16W_SERIES.pdf
BC817-16W_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
40+7.93 грн
67+4.58 грн
108+2.84 грн
Мінімальне замовлення: 40 шт
В кошику  од. на суму  грн.
BC817-16W-AU_R1_000A1 BC817-16W-AU_SERIES.pdf
BC817-16W-AU_R1_000A1
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16W-AU_R1_000A1 BC817-16W-AU_SERIES.pdf
BC817-16W-AU_R1_000A1
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1938 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
31+10.31 грн
53+5.80 грн
100+3.60 грн
500+2.44 грн
1000+2.14 грн
Мінімальне замовлення: 31 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC846BS-AU_BC847AS-AU.pdf
BC817-16_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.91 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC846BS-AU_BC847AS-AU.pdf
BC817-16_R1_00001
Виробник: Panjit International Inc.
Description: TRANS NPN 45V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 4029 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
23+14.27 грн
36+8.55 грн
100+5.29 грн
500+3.62 грн
1000+3.18 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
MBR680FCT_T0_00001
Виробник: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
товару немає в наявності
В кошику  од. на суму  грн.
MBR650FCT_T0_00001
Виробник: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
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MBR690CT_T0_00001 MBR640CT_SERIES.pdf
MBR690CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 90V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200FCT_T0_00001 MBR640FCT_SERIES.pdf
MBR6200FCT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOT 200V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6080PT_T0_00001 MBR6040PT_SERIES.pdf
MBR6080PT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 80V 60A TO247AD
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
товару немає в наявності
Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR650CT_T0_00001 MBR640CT_SERIES.pdf
MBR650CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 50V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6040PT_T0_00001 MBR6040PT_SERIES.pdf
MBR6040PT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 60A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 877 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+226.78 грн
30+117.56 грн
60+105.49 грн
120+89.45 грн
510+74.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MBR690FCT_T0_00001
Виробник: Panjit International Inc.
Description: SCHOTTKY BARRIER RECTIFIERS
товару немає в наявності
В кошику  од. на суму  грн.
MBR660CT_T0_00001 MBR640CT_SERIES.pdf
MBR660CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 60V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200CT_T0_00001 MBR640CT_SERIES.pdf
MBR6200CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 200V 6A TO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR640FCT_T0_00001 MBR640FCT_SERIES.pdf
MBR640FCT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6090PT_T0_00001 MBR6040PT_SERIES.pdf
MBR6090PT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 90V 60A TO247AD
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR640CT_T0_00001 MBR640CT_SERIES.pdf
MBR640CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR680CT_T0_00001 MBR640CT_SERIES.pdf
MBR680CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 80V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6050PT_T0_00001 MBR6040PT_SERIES.pdf
MBR6050PT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
товару немає в наявності
Мінімальне замовлення: 75000 шт
В кошику  од. на суму  грн.
MBR6150FCT_T0_00001 MBR640FCT_SERIES.pdf
MBR6150FCT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOT 150V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR660FCT_T0_00001 MBR640FCT_SERIES.pdf
MBR660FCT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 60V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645FCT_T0_00001 MBR640FCT_SERIES.pdf
MBR645FCT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 45V 6A ITO220AB
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645CT_T0_00001 MBR640CT_SERIES.pdf
MBR645CT_T0_00001
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 45V 6A TO-220AB
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645F_T0_00001 MBR640F_SERIES.pdf
MBR645F_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 45V 6A ITO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR650_T0_00001 MBR640_SERIES.pdf
MBR650_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR660_T0_00001 MBR640_SERIES.pdf
MBR660_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR690F_T0_00001 MBR640F_SERIES.pdf
MBR690F_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 6A ITO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1822 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+119.73 грн
50+54.96 грн
100+49.06 грн
500+36.32 грн
1000+33.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MBR640_T0_00001 MBR640_SERIES.pdf
MBR640_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6200_T0_00001 MBR640_SERIES.pdf
MBR6200_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 200V 6A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR6150_T0_00001 MBR640_SERIES.pdf
MBR6150_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR650F_T0_00001 MBR640F_SERIES.pdf
MBR650F_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 50V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR690_T0_00001 MBR640_SERIES.pdf
MBR690_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 90V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR645_T0_00001 MBR640_SERIES.pdf
MBR645_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
MBR680_T0_00001 MBR640_SERIES.pdf
MBR680_T0_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 80V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 76000 шт
В кошику  од. на суму  грн.
BZT52-C5V1-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C5V1-AU_R1_000A1
Виробник: Panjit International Inc.
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BZT52-C5V1-AU_R1_000A1 BZT52-C2V4-AU_SERIES.pdf
BZT52-C5V1-AU_R1_000A1
Виробник: Panjit International Inc.
Description: DIODE ZENER 5.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJL9452A_R2_00001 PJL9452A.pdf
PJL9452A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW3N10A_R2_00001 PJW3N10A.pdf
PJW3N10A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+12.19 грн
5000+10.98 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW3N10A_R2_00001 PJW3N10A.pdf
PJW3N10A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 12480 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.10 грн
11+28.40 грн
100+21.21 грн
500+15.64 грн
1000+12.09 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
PJQ5476AL_R2_00001 PJQ5476AL.pdf
PJQ5476AL_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5476AL_R2_00001 PJQ5476AL.pdf
PJQ5476AL_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+100.70 грн
10+60.70 грн
100+40.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
PJD25N10A_L2_00001 PJD25N10A.pdf
PJD25N10A_L2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJD25N10A_L2_00001 PJD25N10A.pdf
PJD25N10A_L2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+71.36 грн
10+43.22 грн
100+28.27 грн
500+20.50 грн
1000+18.56 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
PJQ5474A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5474A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
В кошику  од. на суму  грн.
PJL9458AL_R2_00001 PJL9458AL.pdf
PJL9458AL_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJL9458AL_R2_00001 PJL9458AL.pdf
PJL9458AL_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4476AP-AU_R2_000A1 PJQ4476AP-AU.pdf
PJQ4476AP-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJQ4476AP-AU_R2_000A1 PJQ4476AP-AU.pdf
PJQ4476AP-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4868 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+120.53 грн
10+73.15 грн
100+48.83 грн
500+36.02 грн
1000+32.86 грн
2000+30.20 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJW5N10A_R2_00001 PJW5N10A.pdf
PJW5N10A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10A_R2_00001 PJW5N10A.pdf
PJW5N10A_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N10-AU_R2_000A1 PJW5N10-AU.pdf
PJW5N10-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10-AU_R2_000A1 PJW5N10-AU.pdf
PJW5N10-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N10_R2_00001 PJW5N10.pdf
PJW5N10_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
PJW5N10_R2_00001 PJW5N10.pdf
PJW5N10_R2_00001
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5476AL-AU_R2_000A1 PJQ5476AL-AU.pdf
PJQ5476AL-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+28.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJQ5476AL-AU_R2_000A1 PJQ5476AL-AU.pdf
PJQ5476AL-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 3152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+108.63 грн
10+66.05 грн
100+43.84 грн
500+32.20 грн
1000+29.32 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
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