Продукція > QUEST SEMI > Всі товари виробника QUEST SEMI (14) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
Доступність |
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QS120SCM80D2P | Quest Semi |
 Description: 1200V N-CHANNEL SIC MOSFET 80 MPackaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 5mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1001 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QS1700SCM8 | Quest Semi |
Description: 1700v 8AMP SiC Mosfet Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: PG-TO247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V |
на замовлення 2496 шт: термін постачання 21-31 дні (днів) |
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QS50T45D | Quest Semi |
Description: Solar Schottky Diode Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QS50T45T | Quest Semi |
Description: DIODE SCHOTTKY 45V 50A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 50A Operating Temperature - Junction: -55°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A Current - Reverse Leakage @ Vr: 80 mA @ 45 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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QS65SCM65D2P | Quest Semi |
Description: 650v 65amp SiC Mosfet D2PAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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QS800SGL330A3S | Quest Semi |
Description: 3300v 800amp IGBT Packaging: Bag Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 800A NTC Thermistor: No Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 9.62 kW Current - Collector Cutoff (Max): 12 mA Input Capacitance (Cies) @ Vce: 125000 pF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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QSD10HCS120U | Quest Semi |
Description: 1200v 10amp SiC Schottky Barrier Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 770pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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QSD10HCS500U | Quest Semi |
Description: 5000v 10amp Homogeneous SiC Scho Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3880pF @ 0V, 1MHz Current - Average Rectified (Io): 66A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 5000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 5000 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QSD-10HCS500U | Quest Semi |
Description: DIODE SIL CARB 5000V 10A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3880pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 5000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 5000 V |
на замовлення 472 шт: термін постачання 21-31 дні (днів) |
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QSD12HCS65U | Quest Semi |
Description: DIODE SIC 650V 12A TO247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-247-3L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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QSD25HCS170U | Quest Semi |
Description: DIODE SIL CARB 1700V 94A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2822pF @ 0V, 1MHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1700 V |
на замовлення 1233 шт: термін постачання 21-31 дні (днів) |
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QSD50HCS120U | Quest Semi |
Description: Homogeneous SiC Schottky Diode 1 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QSD6HCS65U | Quest Semi |
Description: DIODE SIL CARB 650V 21A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 0V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS-HCS500015 | Quest Semi |
Description: 5000V 10A 1.5Vf Homogeneous SiC Packaging: Dispenser |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| QS120SCM80D2P |
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Виробник: Quest Semi
Description: 1200V N-CHANNEL SIC MOSFET 80 M
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1001 pF @ 800 V
Description: 1200V N-CHANNEL SIC MOSFET 80 M
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1001 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 663.63 грн |
| 10+ | 621.29 грн |
| 250+ | 604.71 грн |
| 500+ | 535.06 грн |
| QS1700SCM8 |
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Виробник: Quest Semi
Description: 1700v 8AMP SiC Mosfet
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V
Description: 1700v 8AMP SiC Mosfet
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 20V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 142 pF @ 1000 V
на замовлення 2496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.50 грн |
| 10+ | 203.90 грн |
| 50+ | 172.77 грн |
| 100+ | 136.20 грн |
| 1000+ | 116.74 грн |
| QS50T45D |
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на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 78.22 грн |
| 500+ | 54.60 грн |
| 1000+ | 47.69 грн |
| QS50T45T |
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Виробник: Quest Semi
Description: DIODE SCHOTTKY 45V 50A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Current - Reverse Leakage @ Vr: 80 mA @ 45 V
Description: DIODE SCHOTTKY 45V 50A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 30 A
Current - Reverse Leakage @ Vr: 80 mA @ 45 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 100.48 грн |
| 500+ | 82.93 грн |
| QS65SCM65D2P |
Виробник: Quest Semi
Description: 650v 65amp SiC Mosfet D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V
Description: 650v 65amp SiC Mosfet D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 20V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1946 pF @ 400 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 733.83 грн |
| 10+ | 655.88 грн |
| 250+ | 637.88 грн |
| 500+ | 561.01 грн |
| QS800SGL330A3S |
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Виробник: Quest Semi
Description: 3300v 800amp IGBT
Packaging: Bag
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 800A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9.62 kW
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 125000 pF @ 25 V
Description: 3300v 800amp IGBT
Packaging: Bag
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 800A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 9.62 kW
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 125000 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 107650.89 грн |
| 3+ | 96752.89 грн |
| QSD10HCS120U |
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Виробник: Quest Semi
Description: 1200v 10amp SiC Schottky Barrier
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 770pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: 1200v 10amp SiC Schottky Barrier
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 770pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.32 грн |
| 50+ | 129.24 грн |
| 100+ | 127.85 грн |
| 500+ | 107.01 грн |
| 1000+ | 96.64 грн |
| QSD10HCS500U |
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Виробник: Quest Semi
Description: 5000v 10amp Homogeneous SiC Scho
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Description: 5000v 10amp Homogeneous SiC Scho
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8797.86 грн |
| 10+ | 7766.30 грн |
| 100+ | 6707.26 грн |
| 500+ | 5631.92 грн |
| QSD-10HCS500U |
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Виробник: Quest Semi
Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
Description: DIODE SIL CARB 5000V 10A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3880pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 5000 V
на замовлення 472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3229.20 грн |
| 10+ | 2695.27 грн |
| 100+ | 2487.93 грн |
| QSD12HCS65U |
|
Виробник: Quest Semi
Description: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIC 650V 12A TO247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 386.10 грн |
| 10+ | 194.23 грн |
| 100+ | 176.92 грн |
| 500+ | 138.79 грн |
| 1000+ | 130.36 грн |
| QSD25HCS170U |
Виробник: Quest Semi
Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Description: DIODE SIL CARB 1700V 94A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2822pF @ 0V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 630.82 грн |
| 100+ | 480.31 грн |
| 500+ | 456.12 грн |
| 1000+ | 427.40 грн |
| QSD50HCS120U |
Виробник: Quest Semi
Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
Description: Homogeneous SiC Schottky Diode 1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2380000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.41 грн |
| 250+ | 114.72 грн |
| 500+ | 93.30 грн |
| 1000+ | 81.72 грн |
| QSD6HCS65U |
|
Виробник: Quest Semi
Description: DIODE SIL CARB 650V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 0V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 650 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 179.42 грн |
| 50+ | 152.04 грн |
| 100+ | 138.22 грн |
| 1000+ | 128.42 грн |
| QS-HCS500015 |
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 358477.12 грн |