Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (98392) > Сторінка 1617 з 1640
| Фото | Назва | Виробник | Інформація |
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -6A Pulsed drain current: -24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| UT6K30TCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 223mΩ Gate-source voltage: ±20V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 2.1nC Polarisation: unipolar Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET |
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| UT6K3TCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 63mΩ Gate-source voltage: ±12V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4nC Polarisation: unipolar Drain current: 5.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET |
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| RF4C100BCTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Pulsed drain current: -36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±8V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 23.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| RF4E075ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 21.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| RF4E080BNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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| RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 32A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 17.6mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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| RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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| RF4E110GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 44A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
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RS3E180ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -72A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced |
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RS3L110ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Pulsed drain current: -44A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhanced |
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RRH050P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ |
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RRH140P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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RRH140P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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RRH090P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8 Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Case: SOP8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A |
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RRH100P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 68nC Kind of channel: enhanced Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Pulsed drain current: -40A Type of transistor: P-MOSFET Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD |
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RRH100P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 68nC Kind of channel: enhanced Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Pulsed drain current: -40A Type of transistor: P-MOSFET Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD |
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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DTC144EU3HZGT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 2W Case: SC70; SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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SH8M41TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2245 шт: термін постачання 21-30 дні (днів) |
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SH8M51GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 3/-2.5A Pulsed drain current: 10...12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 190/340mΩ Mounting: SMD Gate charge: 8.5/12.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SH8MB5TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5A; Idm: 34A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 26/21mΩ Mounting: SMD Gate charge: 10.6/51nC Kind of package: reel; tape Kind of channel: enhanced |
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SP8M10FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SP8M21FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhanced |
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SP8M6FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5/-3.5A Pulsed drain current: 14...20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 82/165mΩ Mounting: SMD Gate charge: 3.9/5.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SP8M8FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.5A Pulsed drain current: 18...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 47/90mΩ Mounting: SMD Gate charge: 7.2/8.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| UT6JA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 103mΩ Gate-source voltage: ±20V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.7nC Polarisation: unipolar Drain current: -4A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET x2 |
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| UT6JA3TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 0.118Ω Gate-source voltage: ±8V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.5nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 |
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| UT6MA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 80/103mΩ Gate-source voltage: ±20V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4.3/6.7nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 30/-30V Type of transistor: N/P-MOSFET |
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| UT6MA3TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 63/76mΩ Gate-source voltage: ±8V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4/6.5nC Polarisation: unipolar Drain current: 5.5/-5A Kind of channel: enhanced Drain-source voltage: 20/-20V Type of transistor: N/P-MOSFET |
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| HS8K11TB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7/11A; Idm: 28÷44A; 2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7/11A Pulsed drain current: 28...44A Power dissipation: 2W Case: uDFN8 Gate-source voltage: ±20V On-state resistance: 29.1/15.4mΩ Mounting: SMD Gate charge: 11.1/20.2C Kind of package: reel; tape Kind of channel: enhanced |
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| HS8K1TB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 10/11A; Idm: 40÷44A; 2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 10/11A Pulsed drain current: 40...44A Power dissipation: 2W Case: uDFN8 Gate-source voltage: ±20V On-state resistance: 20/16.5mΩ Mounting: SMD Gate charge: 6/7.4nC Kind of package: reel; tape Kind of channel: enhanced |
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SH8K11GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 140mΩ Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K26GZ0TB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K32GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K32TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K37GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K41GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.4A; Idm: 13.6A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.4A Pulsed drain current: 13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8K52GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8KC6TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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SP8K24FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: 24A Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 Drain-source voltage: 45V Drain current: 6A On-state resistance: 37mΩ Gate charge: 15.4nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
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SP8K31FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SP8K31HZGTB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SP8K32HZGTB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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SP8K33FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SP8K33HZGTB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SP8K52FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| SH8J31GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -18A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 85mΩ Gate charge: 40nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
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SH8J62TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| SH8JC5TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -7.5A; Idm: -30A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -30A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -60V Drain current: -7.5A On-state resistance: 35mΩ Gate charge: 50nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
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| SP8J5FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -28A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -30V Drain current: -7A On-state resistance: 42mΩ Gate charge: 25nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
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SH8J65TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SH8J66TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -36A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| SH8JB5TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: -34A Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 Drain-source voltage: -40V Drain current: -8.5A On-state resistance: 18.7mΩ Gate charge: 51nC Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |
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SMLVN6RGB1U1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1411,PLCC6; RGB; 3.5x2.8x0.6mm; 2.1/3.3/3.3V; 20mA Type of diode: LED Mounting: SMD Case: 1411; PLCC6 LED colour: RGB Dimensions: 3.5x2.8x0.6mm LED current: 20mA Wavelength: 465...475nm; 520...535nm; 619...629nm LED version: tricolour Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd Luminosity of green colour: 710...1200mcd Front: flat Operating voltage: 2.1/3.3/3.3V |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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| SCT2160KEGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 208mΩ Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Kind of package: tube Gate charge: 62nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 55A Mounting: THT Case: TO247 |
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| STZ5.6NT146 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC59,SOT346; 1uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SC59; SOT346 Semiconductor structure: common anode; double Leakage current: 1µA |
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| EMZ6.8NTL | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC75A,SOT416; 500nA Type of diode: Zener Mounting: SMD Semiconductor structure: common anode; double Case: SC75A; SOT416 Kind of package: reel; tape Leakage current: 0.5µA Power dissipation: 0.15W Zener voltage: 6.8V |
товар відсутній |
| RSH070P05GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070P05TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSS060P05FRATB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| UT6K30TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 223mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 223mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
товар відсутній
| UT6K3TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63mΩ
Gate-source voltage: ±12V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63mΩ
Gate-source voltage: ±12V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 5.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
товар відсутній
| RF4C100BCTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Pulsed drain current: -36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±8V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 23.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -36A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Pulsed drain current: -36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±8V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 23.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF4E075ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 21.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 21.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF4E080BNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.85 грн |
| 25+ | 15.85 грн |
| 64+ | 12.48 грн |
| 176+ | 11.8 грн |
| RF4E080GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 17.6mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.64 грн |
| 25+ | 18.41 грн |
| 55+ | 14.59 грн |
| 151+ | 13.8 грн |
| RF4E100AJTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.14 грн |
| 15+ | 23.53 грн |
| 25+ | 18.68 грн |
| 48+ | 16.64 грн |
| 132+ | 15.73 грн |
| 500+ | 15.64 грн |
| RF4E110GNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 44A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RS3E180ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -72A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RS3L110ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; Idm: -44A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14.3mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RRH050P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
товар відсутній
| RRH140P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RRH140P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RRH090P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
товар відсутній
| RRH100P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
товар відсутній
| RRH100P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
товар відсутній
| RRS100P03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| DTC144EU3HZGT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| SH8M41TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.63 грн |
| 10+ | 36.95 грн |
| 25+ | 32.66 грн |
| 27+ | 29.68 грн |
| 74+ | 28.09 грн |
| 500+ | 27.26 грн |
| SH8M51GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 3/-2.5A
Pulsed drain current: 10...12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 190/340mΩ
Mounting: SMD
Gate charge: 8.5/12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 3/-2.5A
Pulsed drain current: 10...12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 190/340mΩ
Mounting: SMD
Gate charge: 8.5/12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SH8MB5TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5A; Idm: 34A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 26/21mΩ
Mounting: SMD
Gate charge: 10.6/51nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5A; Idm: 34A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 26/21mΩ
Mounting: SMD
Gate charge: 10.6/51nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SP8M10FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/-4.5A
Pulsed drain current: 18...28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/90mΩ
Mounting: SMD
Gate charge: 8.4/8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SP8M21FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SP8M6FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SP8M8FRATB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| UT6JA2TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Pulsed drain current: -12A
Power dissipation: 2W
Gate charge: 6.7nC
Polarisation: unipolar
Drain current: -4A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Pulsed drain current: -12A
Power dissipation: 2W
Gate charge: 6.7nC
Polarisation: unipolar
Drain current: -4A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
товар відсутній
| UT6JA3TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 0.118Ω
Gate-source voltage: ±8V
Pulsed drain current: -12A
Power dissipation: 2W
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 0.118Ω
Gate-source voltage: ±8V
Pulsed drain current: -12A
Power dissipation: 2W
Gate charge: 6.5nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
товар відсутній
| UT6MA2TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4A; Idm: 12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 80/103mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4.3/6.7nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4A; Idm: 12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 80/103mΩ
Gate-source voltage: ±20V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4.3/6.7nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
товар відсутній
| UT6MA3TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63/76mΩ
Gate-source voltage: ±8V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4/6.5nC
Polarisation: unipolar
Drain current: 5.5/-5A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W
Mounting: SMD
Kind of package: reel; tape
Case: DFN2020D-8
On-state resistance: 63/76mΩ
Gate-source voltage: ±8V
Pulsed drain current: 12A
Power dissipation: 2W
Gate charge: 4/6.5nC
Polarisation: unipolar
Drain current: 5.5/-5A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
товар відсутній
| HS8K11TB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7/11A; Idm: 28÷44A; 2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7/11A
Pulsed drain current: 28...44A
Power dissipation: 2W
Case: uDFN8
Gate-source voltage: ±20V
On-state resistance: 29.1/15.4mΩ
Mounting: SMD
Gate charge: 11.1/20.2C
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7/11A; Idm: 28÷44A; 2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7/11A
Pulsed drain current: 28...44A
Power dissipation: 2W
Case: uDFN8
Gate-source voltage: ±20V
On-state resistance: 29.1/15.4mΩ
Mounting: SMD
Gate charge: 11.1/20.2C
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| HS8K1TB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 10/11A; Idm: 40÷44A; 2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10/11A
Pulsed drain current: 40...44A
Power dissipation: 2W
Case: uDFN8
Gate-source voltage: ±20V
On-state resistance: 20/16.5mΩ
Mounting: SMD
Gate charge: 6/7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 10/11A; Idm: 40÷44A; 2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10/11A
Pulsed drain current: 40...44A
Power dissipation: 2W
Case: uDFN8
Gate-source voltage: ±20V
On-state resistance: 20/16.5mΩ
Mounting: SMD
Gate charge: 6/7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SH8K11GZETB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 140mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 140mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K26GZ0TB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K32GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K32TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K37GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K41GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.4A; Idm: 13.6A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.4A
Pulsed drain current: 13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.4A; Idm: 13.6A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.4A
Pulsed drain current: 13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8K52GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8KC6TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.53 грн |
| 13+ | 27.68 грн |
| 25+ | 24.91 грн |
| 40+ | 19.17 грн |
| SP8K24FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 24A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Drain-source voltage: 45V
Drain current: 6A
On-state resistance: 37mΩ
Gate charge: 15.4nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 45V; 6A; Idm: 24A; 2W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 24A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Drain-source voltage: 45V
Drain current: 6A
On-state resistance: 37mΩ
Gate charge: 15.4nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SP8K31FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SP8K31HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SP8K32HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.89 грн |
| 10+ | 37.64 грн |
| 25+ | 33.35 грн |
| 28+ | 29.61 грн |
| 75+ | 27.95 грн |
| 500+ | 27.82 грн |
| SP8K33FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SP8K33HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SP8K52FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8J31GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -18A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 85mΩ
Gate charge: 40nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -18A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 85mΩ
Gate charge: 40nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SH8J62TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8JC5TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -7.5A; Idm: -30A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -30A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -60V
Drain current: -7.5A
On-state resistance: 35mΩ
Gate charge: 50nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -7.5A; Idm: -30A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -30A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -60V
Drain current: -7.5A
On-state resistance: 35mΩ
Gate charge: 50nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SP8J5FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -28A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 42mΩ
Gate charge: 25nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -28A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 42mΩ
Gate charge: 25nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SH8J65TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8J66TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SH8JB5TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -34A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -40V
Drain current: -8.5A
On-state resistance: 18.7mΩ
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: -34A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Drain-source voltage: -40V
Drain current: -8.5A
On-state resistance: 18.7mΩ
Gate charge: 51nC
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| SMLVN6RGB1U1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1411,PLCC6; RGB; 3.5x2.8x0.6mm; 2.1/3.3/3.3V; 20mA
Type of diode: LED
Mounting: SMD
Case: 1411; PLCC6
LED colour: RGB
Dimensions: 3.5x2.8x0.6mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.3V
Category: SMD colour LEDs
Description: LED; SMD; 1411,PLCC6; RGB; 3.5x2.8x0.6mm; 2.1/3.3/3.3V; 20mA
Type of diode: LED
Mounting: SMD
Case: 1411; PLCC6
LED colour: RGB
Dimensions: 3.5x2.8x0.6mm
LED current: 20mA
Wavelength: 465...475nm; 520...535nm; 619...629nm
LED version: tricolour
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
Luminosity of green colour: 710...1200mcd
Front: flat
Operating voltage: 2.1/3.3/3.3V
на замовлення 950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.32 грн |
| 8+ | 48.57 грн |
| 22+ | 37.36 грн |
| 59+ | 35.29 грн |
| SCT2160KEGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 208mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 55A
Mounting: THT
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 208mΩ
Type of transistor: N-MOSFET
Power dissipation: 165W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 55A
Mounting: THT
Case: TO247
товар відсутній
| STZ5.6NT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC59,SOT346; 1uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC59,SOT346; 1uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 1µA
товар відсутній
| EMZ6.8NTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC75A,SOT416; 500nA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: common anode; double
Case: SC75A; SOT416
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.15W
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC75A,SOT416; 500nA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: common anode; double
Case: SC75A; SOT416
Kind of package: reel; tape
Leakage current: 0.5µA
Power dissipation: 0.15W
Zener voltage: 6.8V
товар відсутній