Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (97655) > Сторінка 1618 з 1628
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EDZVFHT2R15B | ROHM SEMICONDUCTOR |
 Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 15V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVFHT2R16B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 16V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 16V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVFHT2R2.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 2.2V; SMD; reel,tape; SC79,SOD523; 120uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 2.2V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 120µA |
товар відсутній |
||||||||||||
| EDZVFHT2R3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.9V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 5µA |
товар відсутній |
||||||||||||
| EDZVFHT2R30B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 30V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVFHT2R36B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 36V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVFHT2R4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.7V Kind of package: reel; tape Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Leakage current: 2µA |
товар відсутній |
||||||||||||
| EDZVFHT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 2µA |
товар відсутній |
||||||||||||
| EDZVFHT2R5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 1µA |
товар відсутній |
||||||||||||
| EDZVFHT2R6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 6.8V Kind of package: reel; tape Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 4350 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
| EDZVFHT2R7.5B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 7.5V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
||||||||||||
| EDZVT2R10B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R11B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 11V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R13B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 13V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 13V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R15B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 15V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R18B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R24B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 24V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R27B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 27V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 27V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R3.0B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 50µA |
товар відсутній |
||||||||||||
| EDZVT2R3.9B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.9V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 5µA |
товар відсутній |
||||||||||||
| EDZVT2R30B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 30V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R33B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R36B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 36V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товар відсутній |
||||||||||||
| EDZVT2R4.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 5µA |
товар відсутній |
||||||||||||
| EDZVT2R4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 4.7V Kind of package: reel; tape Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Leakage current: 2µA |
товар відсутній |
||||||||||||
| EDZVT2R5.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC79; SOD523F Semiconductor structure: single diode Leakage current: 1µA |
товар відсутній |
||||||||||||
| EDZVT2R6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 6.8V Kind of package: reel; tape Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
||||||||||||
| EDZVT2R7.5B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 7.5V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
||||||||||||
| EDZVT2R8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 8.2V; SMD; reel,tape; SC79,SOD523; 500nA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
||||||||||||
 |
RN142SMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 60V Load current: 0.1A Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.45pF |
товар відсутній |
|||||||||||
 |
FMN1T148 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SC74A,SOT25; Ufmax: 0.9V; 80mW Type of diode: switching Max. off-state voltage: 80V Max. forward voltage: 0.9V Load current: 25mA Max. load current: 80mA Semiconductor structure: common cathode; quadruple Case: SC74A; SOT25 Mounting: SMD Max. forward impulse current: 0.25A Kind of package: reel; tape Reverse recovery time: 4ns Power dissipation: 80mW |
товар відсутній |
|||||||||||
 |
IMN10T108 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Max. off-state voltage: 80V Max. forward voltage: 1.2V Load current: 0.1A Max. load current: 0.3A Semiconductor structure: triple independent Case: SOT457 Mounting: SMD Features of semiconductor devices: fast switching Max. forward impulse current: 4A Kind of package: reel; tape Reverse recovery time: 4ns Power dissipation: 0.3W |
на замовлення 2994 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| RFN10BM3SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 10A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.5V Max. forward impulse current: 80A Kind of package: reel; tape |
товар відсутній |
||||||||||||
| RFN10BM3STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 10A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.5V Max. forward impulse current: 80A Kind of package: reel; tape |
товар відсутній |
||||||||||||
| RFN10BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Reverse recovery time: 50ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
товар відсутній |
||||||||||||
| RFN10BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Reverse recovery time: 50ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
товар відсутній |
||||||||||||
| RFN1LAM6STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V Mounting: SMD Max. forward impulse current: 15A Case: SOD128 Kind of package: reel; tape Load current: 0.8A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV |
товар відсутній |
||||||||||||
 |
RFN1LAM6STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V Mounting: SMD Max. forward impulse current: 15A Case: SOD128 Kind of package: reel; tape Load current: 0.8A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| SCT3017ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||
| SCT3017ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Mounting: THT On-state resistance: 22.1mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar Kind of package: tube Gate charge: 172nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 295A Case: TO247 Drain-source voltage: 650V Drain current: 118A |
товар відсутній |
||||||||||||
| SCT3022ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||
| SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A |
товар відсутній |
||||||||||||
| SCT3022KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||
| SCT3022KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 427W Polarisation: unipolar Kind of package: tube Gate charge: 178nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 237A Case: TO247 Drain-source voltage: 1.2kV Drain current: 95A |
товар відсутній |
||||||||||||
| SCT3030ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
| SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A |
товар відсутній |
||||||||||||
| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247-4 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
| SCT3030AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Mounting: SMD Power dissipation: 267W Polarisation: unipolar Kind of package: reel; tape Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO263-7 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
| SCT3030KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Mounting: THT Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 131nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 180A Case: TO247 Drain-source voltage: 1.2kV Drain current: 72A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
| SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 131nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 180A Case: TO247 Drain-source voltage: 1.2kV Drain current: 72A |
товар відсутній |
||||||||||||
 |
SCT3040KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Power dissipation: 262W Case: TO247 On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||
| SCT3040KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Mounting: THT On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 107nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 137A Case: TO247 Drain-source voltage: 1.2kV Drain current: 55A |
товар відсутній |
||||||||||||
| SCT3040KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Pulsed drain current: 137A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |
||||||||||||
| SCT3040KW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 56A Pulsed drain current: 140A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||
| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||
| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |
||||||||||||
| SCT3105KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Case: TO247-4 Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||
| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||
|
|
SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 103W Case: TO247 On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
RB160VAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD323HE Leakage current: 50µA Max. forward impulse current: 10A |
на замовлення 1250 шт: термін постачання 21-30 дні (днів) |
|
| EDZVFHT2R15B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVFHT2R16B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 16V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 16V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 16V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 16V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVFHT2R2.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 2.2V; SMD; reel,tape; SC79,SOD523; 120uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 120µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 2.2V; SMD; reel,tape; SC79,SOD523; 120uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 2.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 120µA
товар відсутній
| EDZVFHT2R3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| EDZVFHT2R30B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVFHT2R36B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVFHT2R4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній
| EDZVFHT2R5.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній
| EDZVFHT2R5.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
| EDZVFHT2R6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 4350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.06 грн |
| 500+ | 1.82 грн |
| 525+ | 1.57 грн |
| 1425+ | 1.49 грн |
| EDZVFHT2R7.5B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| EDZVT2R10B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 10V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R11B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 11V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R13B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 13V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 13V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 13V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R15B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 15V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R18B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 18V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R24B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 24V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 24V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R27B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 27V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 27V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R3.0B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 50µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 50µA
товар відсутній
| EDZVT2R3.9B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.9V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.9V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| EDZVT2R30B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 30V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R33B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 33V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R36B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| EDZVT2R4.3B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.3V; SMD; reel,tape; SC79,SOD523; 5uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| EDZVT2R4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 4.7V; SMD; reel,tape; SC79,SOD523; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній
| EDZVT2R5.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
товар відсутній
| EDZVT2R6.8B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 6.8V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| EDZVT2R7.5B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 7.5V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 7.5V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| EDZVT2R8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 8.2V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 8.2V; SMD; reel,tape; SC79,SOD523; 500nA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| RN142SMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
товар відсутній
| FMN1T148 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SC74A,SOT25; Ufmax: 0.9V; 80mW
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 0.9V
Load current: 25mA
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Case: SC74A; SOT25
Mounting: SMD
Max. forward impulse current: 0.25A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 80mW
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SC74A,SOT25; Ufmax: 0.9V; 80mW
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 0.9V
Load current: 25mA
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Case: SC74A; SOT25
Mounting: SMD
Max. forward impulse current: 0.25A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 80mW
товар відсутній
| IMN10T108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Max. load current: 0.3A
Semiconductor structure: triple independent
Case: SOT457
Mounting: SMD
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Max. load current: 0.3A
Semiconductor structure: triple independent
Case: SOT457
Mounting: SMD
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 0.3W
на замовлення 2994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.59 грн |
| 18+ | 20.13 грн |
| 25+ | 17.81 грн |
| 53+ | 15.23 грн |
| 146+ | 14.4 грн |
| RFN10BM3SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
товар відсутній
| RFN10BM3STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
товар відсутній
| RFN10BM6SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RFN10BM6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RFN1LAM6STFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
товар відсутній
| RFN1LAM6STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.21 грн |
| 40+ | 9.53 грн |
| 100+ | 7.58 грн |
| 125+ | 6.58 грн |
| 335+ | 6.22 грн |
| SCT3017ALGC11 |
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3017ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Mounting: THT
On-state resistance: 22.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
Kind of package: tube
Gate charge: 172nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 295A
Case: TO247
Drain-source voltage: 650V
Drain current: 118A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Mounting: THT
On-state resistance: 22.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
Kind of package: tube
Gate charge: 172nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 295A
Case: TO247
Drain-source voltage: 650V
Drain current: 118A
товар відсутній
| SCT3022ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3022ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 133nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 232A
Case: TO247
Drain-source voltage: 650V
Drain current: 93A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 133nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 232A
Case: TO247
Drain-source voltage: 650V
Drain current: 93A
товар відсутній
| SCT3022KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3022KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 427W
Polarisation: unipolar
Kind of package: tube
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 237A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 95A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 427W
Polarisation: unipolar
Kind of package: tube
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 237A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 95A
товар відсутній
| SCT3030ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3030ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
товар відсутній
| SCT3030ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247-4
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247-4
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3030AW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Mounting: SMD
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO263-7
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Mounting: SMD
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO263-7
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3030KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3030KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
товар відсутній
| SCT3040KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3040KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Mounting: THT
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 137A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 55A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Mounting: THT
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 137A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 55A
товар відсутній
| SCT3040KRC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| SCT3040KW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SCT3080ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3080ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| SCT3105KRC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Case: TO247-4
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Case: TO247-4
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
товар відсутній
| SCT3120ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SCT3160KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 103W
Case: TO247
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 103W
Case: TO247
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1115.9 грн |
| 2+ | 680.13 грн |
| 4+ | 642.58 грн |
| RB160VAM-40TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
на замовлення 1250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 5.84 грн |
| 80+ | 4.37 грн |
| 230+ | 3.53 грн |
| 633+ | 3.33 грн |