Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102204) > Сторінка 1699 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BD6529GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.1Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
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| BD2200GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.5A Supply voltage: 2.7...5.5V Number of channels: 1 |
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| BD6520F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
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| BD6522F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
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| BD6528HFV-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.11Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
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2SC4098T106P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323 Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 25V Current gain: 82...180 Frequency: 300MHz Polarisation: bipolar |
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| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement |
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RB085BGE-30TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2 Case: DPAK; SC63; TO252 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Leakage current: 0.3mA Max. forward voltage: 0.48V Load current: 5A x2 Max. off-state voltage: 30V Max. forward impulse current: 50A |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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| R6509KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.5nC On-state resistance: 1.1Ω Power dissipation: 48W Drain current: 9A Pulsed drain current: 27A Drain-source voltage: 650V |
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IMX1T110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN x2 Collector current: 0.15A Power dissipation: 0.3W Current gain: 120...560 Collector-emitter voltage: 50V Frequency: 180MHz Polarisation: bipolar |
на замовлення 2544 шт: термін постачання 21-30 дні (днів) |
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| DAN222WMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.1A Max. load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
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| DAN222WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.1A Max. load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
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DTC115ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 82 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Kind of package: reel; tape |
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BA033CC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Case: TO252-3 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 1A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 4...25V Output voltage: 3.3V |
на замовлення 2071 шт: термін постачання 21-30 дні (днів) |
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| BA33BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Case: TO252-3 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...105°C Output current: 1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±2% Input voltage: 3...16V Output voltage: 3.3V |
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| BA33DD0WHFP-TR | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1% Case: HRP5 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 2A Voltage drop: 0.7V Number of channels: 1 Tolerance: ±1% Input voltage: 3...25V Output voltage: 3.3V |
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| RFV8BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 45ns Max. forward voltage: 2.8V Load current: 8A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
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| RFN10BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Max. forward voltage: 1.55V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
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| RF305BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 3A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
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| RF305BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 3A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
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| RFN10BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Max. forward voltage: 1.55V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
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| RVQ040N05TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
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В кошику од. на суму грн. | ||||||||||||||
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO247 Gate-source voltage: ±30V On-state resistance: 143mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 74nC Power dissipation: 370W Pulsed drain current: 90A |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
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RRQ030P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||
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DTD113ZKT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
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В кошику од. на суму грн. | ||||||||||||||
| SML-P11UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0402; 1÷2.5mcd; 1.8VDC; 1x0.6x0.2mm; 1mA; 50mW Type of diode: LED LED colour: red Mounting: SMD Case: 0402 Luminosity: 1...2.5mcd Operating voltage: 1.8V DC Dimensions: 1x0.6x0.2mm LED current: 1mA Wavelength: 616...626nm LED lens: transparent Power: 50mW Front: flat |
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В кошику од. на суму грн. | |||||||||||||||
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SML-311UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 0.9...2.5mcd Operating voltage: 1.8V DC Dimensions: 1.6x0.8x0.8mm LED current: 2mA Wavelength: 620nm LED lens: transparent Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-D12U1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 40÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 40...63mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 615...625nm LED lens: diffused; white Power: 54mW Front: flat |
на замовлення 3003 шт: термін постачання 21-30 дні (днів) |
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SML-D12U8WT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 25÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 25...63mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 615...625nm LED lens: diffused; white Power: 54mW Front: flat |
на замовлення 2780 шт: термін постачання 21-30 дні (днів) |
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SML-E12UWT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 36...85mcd Operating voltage: 2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 619...629nm LED lens: diffused; white Power: 62mW Front: flat |
на замовлення 6740 шт: термін постачання 21-30 дні (днів) |
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SML-D12V1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW Type of diode: LED LED colour: red Mounting: SMD Front: flat LED current: 20mA LED lens: diffused; white Luminosity: 25...40mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm Power: 54mW Case: 0603 Wavelength: 625...635nm |
на замовлення 4340 шт: термін постачання 21-30 дні (днів) |
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| BD4850FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Supply voltage: 950mV DC...10V DC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open drain Kind of package: reel; tape Case: VSOF5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 5V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 Active logical level: low |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD4850G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 950mV DC...10V DC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open drain Kind of package: reel; tape Case: SSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 5V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 Active logical level: low |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
2SB1197KT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Polarisation: bipolar Type of transistor: PNP Case: SC59; SOT346 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.2W Collector current: 0.8A Collector-emitter voltage: 32V Current gain: 120...270 Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
2SB1197KT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Polarisation: bipolar Type of transistor: PNP Case: SC59; SOT346 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.2W Collector current: 0.8A Collector-emitter voltage: 32V Current gain: 180...390 Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 100V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SML-D12Y1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: yellow Mounting: SMD Case: 0603 Luminosity: 63...100mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 587...593nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 3737 шт: термін постачання 21-30 дні (днів) |
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SCT2450KEC | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Technology: SiC Case: TO247 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -6...22V Gate charge: 27nC On-state resistance: 0.45Ω Drain current: 7A Pulsed drain current: 25A Power dissipation: 85W Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RF501BM2STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A Case: DPAK Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward voltage: 0.92V Load current: 5A Max. forward impulse current: 40A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
SCS210KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 50A Max. forward impulse current: 160A Power dissipation: 150W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RGTH80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 117W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 117W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 84ns Turn-off time: 194ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RGW80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 107W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 59ns Turn-off time: 228ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RGS80TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 48nC Kind of package: tube Turn-on time: 62ns Turn-off time: 291ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IMX8T108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Polarisation: bipolar Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 180...820 Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTA124EKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTA124EU3T106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTA124ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| BD6529GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| BD2200GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| BD6520F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
| BD6522F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
| BD6528HFV-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4098T106P |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| RHK003N06FRAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RB085BGE-30TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 0.3mA
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 0.3mA
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.80 грн |
| 10+ | 62.27 грн |
| 100+ | 45.93 грн |
| 250+ | 39.63 грн |
| 500+ | 39.14 грн |
| R6509KNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| IMX1T110 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Current gain: 120...560
Collector-emitter voltage: 50V
Frequency: 180MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Current gain: 120...560
Collector-emitter voltage: 50V
Frequency: 180MHz
Polarisation: bipolar
на замовлення 2544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 44+ | 9.22 грн |
| 100+ | 6.47 грн |
| 500+ | 5.22 грн |
| 1000+ | 4.80 грн |
| DAN222WMFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
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| DAN222WMTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
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В кошику
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| DTC115ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
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В кошику
од. на суму грн.
| BA033CC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 4...25V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 4...25V
Output voltage: 3.3V
на замовлення 2071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.96 грн |
| 6+ | 67.93 грн |
| 10+ | 62.27 грн |
| 25+ | 54.18 грн |
| 50+ | 50.14 грн |
| 100+ | 46.90 грн |
| 250+ | 46.09 грн |
| BA33BC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
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| BA33DD0WHFP-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1%
Case: HRP5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.7V
Number of channels: 1
Tolerance: ±1%
Input voltage: 3...25V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1%
Case: HRP5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.7V
Number of channels: 1
Tolerance: ±1%
Input voltage: 3...25V
Output voltage: 3.3V
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| RFV8BM6STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 45ns
Max. forward voltage: 2.8V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 45ns
Max. forward voltage: 2.8V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RFN10BM6STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RF305BM6SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RF305BM6STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RFN10BM6SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RVQ040N05TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RFN1L6SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
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| RBR2L60BDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF201L2SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RBR3L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
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| RBR3L60BDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF101L2SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RB050L-60DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| R6030JNZ4C13 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
Power dissipation: 370W
Pulsed drain current: 90A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
Power dissipation: 370W
Pulsed drain current: 90A
на замовлення 534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 488.56 грн |
| 5+ | 410.00 грн |
| 30+ | 334.79 грн |
| RSQ025P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RRQ030P03FRATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| DTD113ZKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
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| SML-P11UTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0402; 1÷2.5mcd; 1.8VDC; 1x0.6x0.2mm; 1mA; 50mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0402
Luminosity: 1...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 616...626nm
LED lens: transparent
Power: 50mW
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0402; 1÷2.5mcd; 1.8VDC; 1x0.6x0.2mm; 1mA; 50mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0402
Luminosity: 1...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 616...626nm
LED lens: transparent
Power: 50mW
Front: flat
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| SML-311UTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
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| SML-D12U1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 40÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 40...63mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: diffused; white
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 40÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 40...63mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: diffused; white
Power: 54mW
Front: flat
на замовлення 3003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 76+ | 5.34 грн |
| 84+ | 4.85 грн |
| 123+ | 3.29 грн |
| 500+ | 3.23 грн |
| SML-D12U8WT86C |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 25...63mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: diffused; white
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷63mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 25...63mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: diffused; white
Power: 54mW
Front: flat
на замовлення 2780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 38+ | 10.76 грн |
| 100+ | 7.11 грн |
| 500+ | 5.40 грн |
| 1000+ | 4.84 грн |
| SML-E12UWT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 36...85mcd
Operating voltage: 2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 619...629nm
LED lens: diffused; white
Power: 62mW
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 36÷85mcd; 2VDC; 1.6x0.8x0.55mm; 20mA; 62mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 36...85mcd
Operating voltage: 2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 619...629nm
LED lens: diffused; white
Power: 62mW
Front: flat
на замовлення 6740 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 100+ | 10.11 грн |
| 500+ | 8.57 грн |
| 1000+ | 8.01 грн |
| 2000+ | 7.28 грн |
| 5000+ | 6.47 грн |
| SML-D12V1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; white
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
Power: 54mW
Case: 0603
Wavelength: 625...635nm
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; white
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
Power: 54mW
Case: 0603
Wavelength: 625...635nm
на замовлення 4340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 51+ | 8.01 грн |
| 100+ | 5.18 грн |
| 500+ | 3.95 грн |
| 1000+ | 3.57 грн |
| 3000+ | 3.53 грн |
| BD4850FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: VSOF5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: VSOF5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
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| BD4850G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
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| RCJ160N20TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RCX160N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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| 2SB1197KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: PNP
Case: SC59; SOT346
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 32V
Current gain: 120...270
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: PNP
Case: SC59; SOT346
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 32V
Current gain: 120...270
Frequency: 200MHz
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| 2SB1197KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: PNP
Case: SC59; SOT346
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 32V
Current gain: 180...390
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: PNP
Case: SC59; SOT346
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 32V
Current gain: 180...390
Frequency: 200MHz
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| KDZLVTFTR100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
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| SML-D12Y1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 3737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 51+ | 8.01 грн |
| 100+ | 5.26 грн |
| 500+ | 4.00 грн |
| 1000+ | 3.61 грн |
| 3000+ | 3.30 грн |
| SCT2450KEC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Technology: SiC
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -6...22V
Gate charge: 27nC
On-state resistance: 0.45Ω
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 85W
Drain-source voltage: 1.2kV
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| RF501BM2STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 5A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 5A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
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| SCS210KGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 50A
Max. forward impulse current: 160A
Power dissipation: 150W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 50A
Max. forward impulse current: 160A
Power dissipation: 150W
Kind of package: tube
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| RGTH80TS65DGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 117W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 194ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 117W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 194ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGW80TS65DGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 107W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 228ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 107W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 228ns
Features of semiconductor devices: integrated anti-parallel diode
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| RGS80TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 291ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 291ns
Features of semiconductor devices: integrated anti-parallel diode
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| IMX8T108 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
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| DTA124EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTA124EU3T106 |
![]() |
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTA124ECAHZGT116 |
![]() |
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.


















