Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102254) > Сторінка 1699 з 1705
| Фото | Назва | Виробник | Інформація |
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RB160LAM-40TFTR | ROHM SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 5930 шт: термін постачання 21-30 дні (днів) |
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RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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RB160LAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 2972 шт: термін постачання 21-30 дні (днів) |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 427 шт: термін постачання 21-30 дні (днів) |
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| DAN217UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Case: SOT323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: double series Max. forward voltage: 1.2V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.3A Reverse recovery time: 4ns Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 20 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SC59; SOT346 |
товару немає в наявності |
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SSTA56T116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23 Mounting: SMD Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SOT23 Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSQ015P10FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Type of transistor: P-MOSFET Mounting: SMD Case: TSMT6 Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -6A |
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RB161MM-20TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Max. forward voltage: 0.35V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 0.7mA Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS215AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 36A Max. forward impulse current: 200A Power dissipation: 39W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
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SCS220AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 136W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
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SCS220KE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 94A Max. forward impulse current: 0.32kA Leakage current: 0.2mA Power dissipation: 270W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
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SCS215AEC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 65A Max. forward impulse current: 200A Power dissipation: 110W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS215AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.55V Max. load current: 65A Max. forward impulse current: 200A Power dissipation: 110W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS215KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 68A Max. forward impulse current: 0.24kA Power dissipation: 180W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
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SCS220AEC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.55V Max. load current: 81A Max. forward impulse current: 260A Power dissipation: 130W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS220AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 41A Max. forward impulse current: 260A Power dissipation: 40W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS220KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 83A Max. forward impulse current: 310A Power dissipation: 210W Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
| SCS220KGC17 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.9V Max. load current: 83A Max. forward impulse current: 310A Leakage current: 0.4mA Power dissipation: 210W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
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| RSF015N06TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ015N06TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: 60V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSF015N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Drain-source voltage: 45V Drain current: 1.5A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 6A |
товару немає в наявності |
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| BH3548F-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2 Case: SOP8 Supply voltage: 4...5.5V DC Type of integrated circuit: audio amplifier Number of channels: 2 Output power: 62mW Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||
| 2SA2029T2LR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.15A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2SA2029T2LQ | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723 Mounting: SMD Frequency: 140MHz Collector-emitter voltage: 50V Current gain: 120...270 Collector current: 0.15A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Case: SOT723 |
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В кошику од. на суму грн. | |||||||||||||||
| RD3S100CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
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UMX18NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
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2SD1834T100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 500mW; SC62,SOT89 Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 60V Current gain: 2k Collector current: 1A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of transistor: Darlington Frequency: 150MHz |
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В кошику од. на суму грн. | ||||||||||||||
| BD48K33G-TL | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP3; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP3 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 3.3V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD48 |
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В кошику од. на суму грн. | |||||||||||||||
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DTDG14GPT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RUF015N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 0.8W Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.31Ω Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 3A |
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| BD4933FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: VSOF5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
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| BD4933G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
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| BU4933FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: VSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
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| BU4933G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Operating temperature: -40...125°C Case: SSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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UMB2NFHATN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 30V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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В кошику од. на суму грн. | ||||||||||||||
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UMB2NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC3838KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346 Frequency: 3.2GHz Collector-emitter voltage: 11V Current gain: 56...120 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC59; SOT346 |
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В кошику од. на суму грн. | ||||||||||||||
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2SC3838KT146P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 11V Collector current: 50mA Power dissipation: 0.2W Case: SOT346 Current gain: 56...270 Mounting: SMD Kind of package: reel; tape Frequency: 3.2GHz Kind of transistor: RF |
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| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.2A Mounting: SMD Case: SMT3 |
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| BU7442FVM-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 600kHz; Ch: 2; MSOP8; 1.7÷5.5VDC Case: MSOP8 Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 600kHz Input offset voltage: 6mV Kind of package: reel; tape Slew rate: 0.3V/μs Input offset current: 1pA Input bias current: 1pA Voltage supply range: 1.7...5.5V DC Mounting: SMT Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||||
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KDZVTR9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
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В кошику од. на суму грн. | ||||||||||||||
| RTL035N03TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: TUMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 79mΩ Gate charge: 4.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 14A |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
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IMD6AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB068MM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.87V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123F |
на замовлення 3369 шт: термін постачання 21-30 дні (днів) |
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RB168MM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.81V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 0.4µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123F |
на замовлення 1870 шт: термін постачання 21-30 дні (днів) |
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| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3nC |
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В кошику од. на суму грн. | |||||||||||||||
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UMT1NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Case: SC88; SOT363 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Power dissipation: 0.15W |
на замовлення 1285 шт: термін постачання 21-30 дні (днів) |
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EMT1T2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Power dissipation: 0.15W |
на замовлення 3494 шт: термін постачання 21-30 дні (днів) |
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| RQ5E070BNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Power dissipation: 1W Drain-source voltage: 30V Drain current: 7A On-state resistance: 20.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 18A |
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В кошику од. на суму грн. | |||||||||||||||
| RGTVX6TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 320A Turn-on time: 83ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 202W Kind of package: tube Gate charge: 171nC Mounting: THT Case: TO247-3 |
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В кошику од. на суму грн. | |||||||||||||||
| RBR15BM60AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2 Type of diode: Schottky rectifying Case: DPAK; SC63; TO252 Mounting: SMD Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.58V Leakage current: 0.4mA Max. forward impulse current: 100A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| RBR15BM60ATL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2 Type of diode: Schottky rectifying Case: DPAK; SC63; TO252 Mounting: SMD Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.58V Leakage current: 0.4mA Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RBR20BM60AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2 Type of diode: Schottky rectifying Case: DPAK; SC63; TO252 Mounting: SMD Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.59V Leakage current: 0.6mA Max. forward impulse current: 100A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| BR25H640F-2ACE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.5...5.5V DC Access time: 4ms Clock frequency: 10MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SD1484KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Case: SC59; SOT346 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 180...390 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
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2SC5824T100Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: bipolar Mounting: SMD Case: SC62; SOT89 Frequency: 200MHz Collector-emitter voltage: 60V Current gain: 120...270 Collector current: 3A Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5824T100R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: bipolar Mounting: SMD Case: SC62; SOT89 Frequency: 200MHz Collector-emitter voltage: 60V Current gain: 180...390 Collector current: 3A Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. |
| RB160LAM-40TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 5930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.05 грн |
| 27+ | 14.53 грн |
| 100+ | 10.47 грн |
| 128+ | 7.19 грн |
| 350+ | 6.80 грн |
| RB160L-40TE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.05 грн |
| 18+ | 21.33 грн |
| 100+ | 13.53 грн |
| 105+ | 8.72 грн |
| 287+ | 8.26 грн |
| RB160LAM-40TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 29.64 грн |
| 20+ | 20.03 грн |
| 24+ | 16.51 грн |
| 50+ | 10.47 грн |
| 100+ | 8.79 грн |
| 140+ | 6.50 грн |
| 385+ | 6.19 грн |
| RGS60TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 427 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 434.70 грн |
| 4+ | 297.39 грн |
| 9+ | 281.33 грн |
| DAN217UMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Case: SOT323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.3A
Reverse recovery time: 4ns
Power dissipation: 0.2W
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| DTA123EKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 20
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC59; SOT346
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| SSTA56T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23
Frequency: 50MHz
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| RSQ015P10FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSMT6
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -6A
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| RB161MM-20TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.35V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 0.7mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
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| SCS215AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 200A
Power dissipation: 39W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 36A
Max. forward impulse current: 200A
Power dissipation: 39W
Kind of package: tube
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| SCS220AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 136W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 136W
Kind of package: tube
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| SCS220KE2GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 94A
Max. forward impulse current: 0.32kA
Leakage current: 0.2mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 94A
Max. forward impulse current: 0.32kA
Leakage current: 0.2mA
Power dissipation: 270W
Kind of package: tube
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| SCS215AEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO247-3; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
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| SCS215AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; 110W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.55V
Max. load current: 65A
Max. forward impulse current: 200A
Power dissipation: 110W
Kind of package: tube
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| SCS215KGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 68A
Max. forward impulse current: 0.24kA
Power dissipation: 180W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; 180W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 68A
Max. forward impulse current: 0.24kA
Power dissipation: 180W
Kind of package: tube
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| SCS220AEC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.55V
Max. load current: 81A
Max. forward impulse current: 260A
Power dissipation: 130W
Kind of package: tube
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| SCS220AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 41A
Max. forward impulse current: 260A
Power dissipation: 40W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 41A
Max. forward impulse current: 260A
Power dissipation: 40W
Kind of package: tube
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| SCS220KGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 83A
Max. forward impulse current: 310A
Power dissipation: 210W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; 210W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 83A
Max. forward impulse current: 310A
Power dissipation: 210W
Kind of package: tube
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| SCS220KGC17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. load current: 83A
Max. forward impulse current: 310A
Leakage current: 0.4mA
Power dissipation: 210W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.9V
Max. load current: 83A
Max. forward impulse current: 310A
Leakage current: 0.4mA
Power dissipation: 210W
Kind of package: tube
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| RSQ030N08HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSF015N06TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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| RSQ015N06TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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| RSF015N06FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Drain-source voltage: 45V
Drain current: 1.5A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 6A
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| BH3548F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 4÷5.5VDC; Ch: 2
Case: SOP8
Supply voltage: 4...5.5V DC
Type of integrated circuit: audio amplifier
Number of channels: 2
Output power: 62mW
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Mounting: SMD
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| 2SA2029T2LR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
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| 2SA2029T2LQ |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 150mW; SOT723
Mounting: SMD
Frequency: 140MHz
Collector-emitter voltage: 50V
Current gain: 120...270
Collector current: 0.15A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
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| RD3S100CNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| UMX18NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 0.5A; 150mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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| 2SD1834T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 500mW; SC62,SOT89
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 2k
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 500mW; SC62,SOT89
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 2k
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 150MHz
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| BD48K33G-TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP3; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP3; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
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| DTDG14GPT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
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| RUF015N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
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| BD4933FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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| BD4933G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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| BU4933FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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| BU4933G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Mounting: SMD
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| UMB2NFHATN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 30V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 30V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
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| UMB2NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
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| 2SC3838KT146N |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 50mA; 200mW; SC59,SOT346
Frequency: 3.2GHz
Collector-emitter voltage: 11V
Current gain: 56...120
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC59; SOT346
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| 2SC3838KT146P |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT346
Current gain: 56...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 11V; 50mA; 200mW; SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT346
Current gain: 56...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 3.2GHz
Kind of transistor: RF
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| RHK003N06FRAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SMT3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SMT3
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| BU7442FVM-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 600kHz; Ch: 2; MSOP8; 1.7÷5.5VDC
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 600kHz
Input offset voltage: 6mV
Kind of package: reel; tape
Slew rate: 0.3V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.7...5.5V DC
Mounting: SMT
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 600kHz; Ch: 2; MSOP8; 1.7÷5.5VDC
Case: MSOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 600kHz
Input offset voltage: 6mV
Kind of package: reel; tape
Slew rate: 0.3V/μs
Input offset current: 1pA
Input bias current: 1pA
Voltage supply range: 1.7...5.5V DC
Mounting: SMT
Operating temperature: -40...85°C
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| KDZVTR9.1B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 9.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
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| RTL035N03TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: TUMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 79mΩ
Gate charge: 4.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 14A
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IMD6AT108 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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| RB068MM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.87V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
на замовлення 3369 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 27.99 грн |
| 22+ | 17.51 грн |
| 100+ | 11.85 грн |
| 152+ | 6.04 грн |
| 419+ | 5.73 грн |
| RB168MM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.81V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 0.4µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123F
на замовлення 1870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.35 грн |
| 23+ | 16.67 грн |
| 50+ | 13.91 грн |
| 100+ | 11.24 грн |
| 151+ | 6.12 грн |
| 413+ | 5.81 грн |
| RK7002AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3nC
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| UMT1NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Power dissipation: 0.15W
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Power dissipation: 0.15W
на замовлення 1285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 20.58 грн |
| 46+ | 8.49 грн |
| 52+ | 7.42 грн |
| 100+ | 5.67 грн |
| 264+ | 3.47 грн |
| 725+ | 3.28 грн |
| EMT1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Power dissipation: 0.15W
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Power dissipation: 0.15W
на замовлення 3494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.52 грн |
| 44+ | 8.79 грн |
| 100+ | 5.45 грн |
| 263+ | 3.49 грн |
| 722+ | 3.29 грн |
| RQ5E070BNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 20.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 20.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
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| RGTVX6TS65GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Kind of package: tube
Gate charge: 171nC
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 80A
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Kind of package: tube
Gate charge: 171nC
Mounting: THT
Case: TO247-3
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| RBR15BM60AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Leakage current: 0.4mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Leakage current: 0.4mA
Max. forward impulse current: 100A
Kind of package: reel; tape
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| RBR15BM60ATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Leakage current: 0.4mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.58V
Leakage current: 0.4mA
Max. forward impulse current: 100A
Kind of package: reel; tape
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| RBR20BM60AFHTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.59V
Leakage current: 0.6mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.59V
Leakage current: 0.6mA
Max. forward impulse current: 100A
Kind of package: reel; tape
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| BR25H640F-2ACE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...5.5V DC
Access time: 4ms
Clock frequency: 10MHz
Kind of package: reel; tape
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| 2SD1484KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 180...390
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
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| 2SC5824T100Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 120...270
Collector current: 3A
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5824T100R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 180...390
Collector current: 3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: bipolar
Mounting: SMD
Case: SC62; SOT89
Frequency: 200MHz
Collector-emitter voltage: 60V
Current gain: 180...390
Collector current: 3A
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.