Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101729) > Сторінка 1695 з 1696
| Фото | Назва | Виробник | Інформація |
Доступність |
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DTC113ZCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC113ZKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
на замовлення 1456 шт: термін постачання 21-30 дні (днів) |
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DTC113ZU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BD2206G-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD; SSOP5 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SSOP5 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.5A Supply voltage: 2.7...5.5V Number of channels: 1 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC4081T106Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC4081U3T106Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DAN217T146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Capacitance: 3.5pF Mounting: SMD Features of semiconductor devices: fast switching Semiconductor structure: double series Reverse recovery time: 4ns Leakage current: 0.1µA Load current: 0.3A Power dissipation: 0.2W Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Type of diode: switching Kind of package: reel; tape Case: SC59; SOT346 |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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DAP202KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Capacitance: 3.5pF Mounting: SMD Features of semiconductor devices: fast switching Semiconductor structure: common anode; double Reverse recovery time: 4ns Leakage current: 0.1µA Load current: 0.3A Power dissipation: 0.2W Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Type of diode: switching Kind of package: reel; tape Case: SC59; SOT346 |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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SMLD12WBN1W1 | ROHM SEMICONDUCTOR |
Category: SMD white LEDsDescription: LED; white cold; SMD; 0603; 56÷120mcd; 5mA; 2.9VDC; Lens: yellow Front: flat Type of diode: LED Mounting: SMD Dimensions: 1.6x0.8x0.55mm LED current: 5mA Luminosity: 56...120mcd Power: 66mW Chromatic coordinates: x: 0.295; y: 0.28 Operating voltage: 2.9V DC Case: 0603 LED colour: white cold LED lens: yellow |
на замовлення 1033 шт: термін постачання 21-30 дні (днів) |
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| RGTH00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 94nC Kind of package: tube Turn-on time: 102ns Turn-off time: 221ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Mounting: THT Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Gate charge: 36nC Turn-on time: 46ns Turn-off time: 290ns Collector current: 30A Gate-emitter voltage: ±30V Pulsed collector current: 90A Power dissipation: 111W Collector-emitter voltage: 650V Kind of package: tube |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
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| RFN10BM3SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A Kind of package: reel; tape Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 80A Max. off-state voltage: 350V Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RFU02VSM8STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 1A Semiconductor structure: single diode Case: SOD323HE Mounting: SMD Kind of package: reel; tape Reverse recovery time: 35ns Load current: 0.2A Max. forward voltage: 3V |
на замовлення 3501 шт: термін постачання 21-30 дні (днів) |
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| SML-Z14DTT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; orange; SMD; 3528; 280mcd; 20mA; 605nm; Lens: transparent Type of diode: LED LED colour: orange Mounting: SMD Case: 3528 Luminosity: 280mcd LED current: 20mA Wavelength: 605nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SML-P11DTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; orange; SMD; 0402; 4÷16mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW Type of diode: LED LED colour: orange Mounting: SMD Case: 0402 Luminosity: 4...16mcd Operating voltage: 1.9V DC Dimensions: 1x0.6x0.2mm LED current: 1mA Wavelength: 601...609nm Front: flat LED lens: transparent Power: 52mW |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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RB162MM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V Semiconductor structure: single diode Case: SOD123F Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.65V Max. forward impulse current: 20A Max. off-state voltage: 60V |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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RB162MM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB162MM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 20A Max. off-state voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RB162LAM-60TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RB162LAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.65V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RB162MM-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.52V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB162MM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.1mA Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RB162VAM-20TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 20V; 1A; reel,tape Semiconductor structure: single diode Case: SOD323HE Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 1.2mA Max. forward voltage: 0.4V Load current: 1A Max. forward impulse current: 5A Max. off-state voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SH8J62TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SH8J65TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SH8J66TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -36A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 1SS390SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape Type of diode: switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1SS390SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape Type of diode: switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMLD12BN1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW Type of diode: LED LED colour: blue Mounting: SMD Case: 0603 Luminosity: 14...40mcd Operating voltage: 2.9V DC Dimensions: 1.6x0.8x0.55mm LED current: 5mA Wavelength: 470nm LED lens: diffused; white Front: flat Power: 66mW |
на замовлення 3563 шт: термін постачання 21-30 дні (днів) |
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| SMLD12EN1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0603; 140mcd; 5mA; 527nm; Lens: white,diffused Front: flat Type of diode: LED Mounting: SMD Wavelength: 527nm LED current: 5mA Luminosity: 140mcd Case: 0603 LED colour: green LED lens: diffused; white |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMLD12E3N1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused Front: flat Type of diode: LED Mounting: SMD Wavelength: 496nm LED current: 5mA Luminosity: 85mcd LED colour: blue; green LED lens: diffused; white |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMLD12E2N1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat Front: flat Type of diode: LED Mounting: SMD Wavelength: 505nm LED current: 5mA Luminosity: 120mcd LED colour: blue LED lens: diffused; white |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RQ3E100BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 40A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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RB160VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. forward impulse current: 5A Kind of package: reel; tape |
на замовлення 1771 шт: термін постачання 21-30 дні (днів) |
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| RB168VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Leakage current: 1µA Max. forward impulse current: 5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| R6020ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RB558VAM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Leakage current: 0.5µA Load current: 0.5A Max. forward voltage: 0.95V Max. forward impulse current: 3A Max. off-state voltage: 150V Case: SOD323HE Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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| SCS312AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA Mounting: THT Technology: SiC Case: TO220AC Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 78W Load current: 12A Max. load current: 52A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SCS312AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape Mounting: SMD Technology: SiC Case: TO263AB Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 88W Load current: 12A Max. load current: 55A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SCS312AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W Mounting: THT Technology: SiC Case: TO220FP-2 Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 36W Load current: 12A Max. load current: 34A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW Type of diode: LED LED colour: green Mounting: SMD Case: 1208 Luminosity: 5.6...25mcd Operating voltage: 2.2...2.8V DC Dimensions: 3x2x1.3mm LED current: 20mA Wavelength: 570nm LED lens: transparent Power: 70mW Front: flat |
на замовлення 2082 шт: термін постачання 21-30 дні (днів) |
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| BR25S320FVT-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8 Mounting: SMD Kind of package: reel; tape Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.7...5.5V DC Memory: 32kb EEPROM Memory organisation: 4kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Case: TSSOP-B8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BU4825F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Manufacturer series: BU48 Kind of RESET output: open drain Active logical level: low Mounting: SMD Kind of package: reel; tape Case: SOP4 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BU4925F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Kind of package: reel; tape Case: SOP4 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25A1MFJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 1Mb EEPROM Clock frequency: 10MHz Memory organisation: 128kx8bit Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25A256FJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8 Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 256kb EEPROM Clock frequency: 10MHz Memory organisation: 32kx8bit Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25A512FJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8 Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 512kb EEPROM Clock frequency: 10MHz Memory organisation: 64kx8bit Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD2202G-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SSOP5 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.2A Supply voltage: 2.7...5.5V Number of channels: 1 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD6529GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.1Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD2200GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.5A Supply voltage: 2.7...5.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD6520F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD6522F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD6528HFV-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.11Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
2SC4098T106P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323 Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 25V Current gain: 82...180 Frequency: 300MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
RB085BGE-30TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2 Case: DPAK; SC63; TO252 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.48V Load current: 5A x2 Max. off-state voltage: 30V Max. forward impulse current: 50A Leakage current: 0.3mA Semiconductor structure: common cathode; double |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
|
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| R6509KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.5nC On-state resistance: 1.1Ω Power dissipation: 48W Drain current: 9A Pulsed drain current: 27A Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| DTC113ZCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
товару немає в наявності
В кошику
од. на суму грн.
| DTC113ZKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 46+ | 8.65 грн |
| 100+ | 5.33 грн |
| 355+ | 2.64 грн |
| 974+ | 2.50 грн |
| DTC113ZU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
товару немає в наявності
В кошику
од. на суму грн.
| BD2206G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4081T106Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4081U3T106Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
| DAN217T146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Capacitance: 3.5pF
Mounting: SMD
Features of semiconductor devices: fast switching
Semiconductor structure: double series
Reverse recovery time: 4ns
Leakage current: 0.1µA
Load current: 0.3A
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Type of diode: switching
Kind of package: reel; tape
Case: SC59; SOT346
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Capacitance: 3.5pF
Mounting: SMD
Features of semiconductor devices: fast switching
Semiconductor structure: double series
Reverse recovery time: 4ns
Leakage current: 0.1µA
Load current: 0.3A
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Type of diode: switching
Kind of package: reel; tape
Case: SC59; SOT346
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.97 грн |
| 43+ | 9.36 грн |
| 46+ | 8.73 грн |
| 58+ | 6.89 грн |
| 100+ | 6.13 грн |
| DAP202KT146 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Capacitance: 3.5pF
Mounting: SMD
Features of semiconductor devices: fast switching
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Leakage current: 0.1µA
Load current: 0.3A
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Type of diode: switching
Kind of package: reel; tape
Case: SC59; SOT346
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Capacitance: 3.5pF
Mounting: SMD
Features of semiconductor devices: fast switching
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Leakage current: 0.1µA
Load current: 0.3A
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Type of diode: switching
Kind of package: reel; tape
Case: SC59; SOT346
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.97 грн |
| 48+ | 7.94 грн |
| SMLD12WBN1W1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white cold; SMD; 0603; 56÷120mcd; 5mA; 2.9VDC; Lens: yellow
Front: flat
Type of diode: LED
Mounting: SMD
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Luminosity: 56...120mcd
Power: 66mW
Chromatic coordinates: x: 0.295; y: 0.28
Operating voltage: 2.9V DC
Case: 0603
LED colour: white cold
LED lens: yellow
Category: SMD white LEDs
Description: LED; white cold; SMD; 0603; 56÷120mcd; 5mA; 2.9VDC; Lens: yellow
Front: flat
Type of diode: LED
Mounting: SMD
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Luminosity: 56...120mcd
Power: 66mW
Chromatic coordinates: x: 0.295; y: 0.28
Operating voltage: 2.9V DC
Case: 0603
LED colour: white cold
LED lens: yellow
на замовлення 1033 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.08 грн |
| 22+ | 18.33 грн |
| 100+ | 11.98 грн |
| 500+ | 9.44 грн |
| RGTH00TS65DGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-on time: 102ns
Turn-off time: 221ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Turn-on time: 102ns
Turn-off time: 221ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| RGS60TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Gate charge: 36nC
Turn-on time: 46ns
Turn-off time: 290ns
Collector current: 30A
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Power dissipation: 111W
Collector-emitter voltage: 650V
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Gate charge: 36nC
Turn-on time: 46ns
Turn-off time: 290ns
Collector current: 30A
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Power dissipation: 111W
Collector-emitter voltage: 650V
Kind of package: tube
на замовлення 419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 399.98 грн |
| 10+ | 332.52 грн |
| 30+ | 288.08 грн |
| 90+ | 276.97 грн |
| RFN10BM3SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 350V
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 350V
Case: DPAK
товару немає в наявності
В кошику
од. на суму грн.
| SCT3080ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCT3080ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| RFU02VSM8STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 3V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 3V
на замовлення 3501 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.64 грн |
| 26+ | 15.79 грн |
| 100+ | 9.21 грн |
| 500+ | 6.59 грн |
| 1000+ | 5.87 грн |
| 3000+ | 5.48 грн |
| SML-Z14DTT86C |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; orange; SMD; 3528; 280mcd; 20mA; 605nm; Lens: transparent
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528
Luminosity: 280mcd
LED current: 20mA
Wavelength: 605nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; orange; SMD; 3528; 280mcd; 20mA; 605nm; Lens: transparent
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528
Luminosity: 280mcd
LED current: 20mA
Wavelength: 605nm
Front: flat
LED lens: transparent
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| SML-P11DTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; orange; SMD; 0402; 4÷16mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 0402
Luminosity: 4...16mcd
Operating voltage: 1.9V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 601...609nm
Front: flat
LED lens: transparent
Power: 52mW
Category: SMD colour LEDs
Description: LED; orange; SMD; 0402; 4÷16mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 0402
Luminosity: 4...16mcd
Operating voltage: 1.9V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 601...609nm
Front: flat
LED lens: transparent
Power: 52mW
на замовлення 408 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.35 грн |
| 22+ | 18.25 грн |
| 100+ | 12.78 грн |
| RB162MM-60TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Max. forward impulse current: 20A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Max. forward impulse current: 20A
Max. off-state voltage: 60V
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 38+ | 10.48 грн |
| 43+ | 9.36 грн |
| 57+ | 7.06 грн |
| 100+ | 6.19 грн |
| 500+ | 4.76 грн |
| RB162MM-40TFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
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| RB162MM-60TFTR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 20A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 20A
Max. off-state voltage: 60V
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| RB162LAM-60TFTR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
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| RB162LAM-60TR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 60V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.65V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
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| RB162MM-30TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.52V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.52V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 30V
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| RB162MM-40TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.1mA
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
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| RB162VAM-20TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD323HE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 1.2mA
Max. forward voltage: 0.4V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD323HE
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 1.2mA
Max. forward voltage: 0.4V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 20V
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| SH8J62TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| SH8J65TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| SH8J66TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| 1SS390SMFHT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
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| 1SS390SMT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
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| SMLD12BN1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW
Type of diode: LED
LED colour: blue
Mounting: SMD
Case: 0603
Luminosity: 14...40mcd
Operating voltage: 2.9V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Wavelength: 470nm
LED lens: diffused; white
Front: flat
Power: 66mW
Category: SMD colour LEDs
Description: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW
Type of diode: LED
LED colour: blue
Mounting: SMD
Case: 0603
Luminosity: 14...40mcd
Operating voltage: 2.9V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Wavelength: 470nm
LED lens: diffused; white
Front: flat
Power: 66mW
на замовлення 3563 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 25+ | 16.19 грн |
| 50+ | 14.21 грн |
| 100+ | 13.25 грн |
| 500+ | 11.19 грн |
| 3000+ | 9.05 грн |
| SMLD12EN1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 140mcd; 5mA; 527nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 527nm
LED current: 5mA
Luminosity: 140mcd
Case: 0603
LED colour: green
LED lens: diffused; white
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 140mcd; 5mA; 527nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 527nm
LED current: 5mA
Luminosity: 140mcd
Case: 0603
LED colour: green
LED lens: diffused; white
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| SMLD12E3N1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 496nm
LED current: 5mA
Luminosity: 85mcd
LED colour: blue; green
LED lens: diffused; white
Category: SMD colour LEDs
Description: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 496nm
LED current: 5mA
Luminosity: 85mcd
LED colour: blue; green
LED lens: diffused; white
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| SMLD12E2N1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 505nm
LED current: 5mA
Luminosity: 120mcd
LED colour: blue
LED lens: diffused; white
Category: SMD colour LEDs
Description: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 505nm
LED current: 5mA
Luminosity: 120mcd
LED colour: blue
LED lens: diffused; white
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| RSQ030N08HZGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RQ3E100BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.19 грн |
| 18+ | 22.30 грн |
| 100+ | 16.03 грн |
| RB160VAM-60TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 5A
Kind of package: reel; tape
на замовлення 1771 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 27+ | 14.92 грн |
| 100+ | 9.10 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| RB168VAM-60TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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| R6020ENXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| RB558VAM150TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 0.5µA
Load current: 0.5A
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Max. off-state voltage: 150V
Case: SOD323HE
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 0.5µA
Load current: 0.5A
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Max. off-state voltage: 150V
Case: SOD323HE
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 33+ | 12.38 грн |
| 50+ | 8.56 грн |
| 100+ | 7.29 грн |
| 500+ | 5.13 грн |
| SCS312AHGC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA
Mounting: THT
Technology: SiC
Case: TO220AC
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 78W
Load current: 12A
Max. load current: 52A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA
Mounting: THT
Technology: SiC
Case: TO220AC
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 78W
Load current: 12A
Max. load current: 52A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
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| SCS312AJTLL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Technology: SiC
Case: TO263AB
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 88W
Load current: 12A
Max. load current: 55A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Technology: SiC
Case: TO263AB
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 88W
Load current: 12A
Max. load current: 55A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: reel; tape
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| SCS312AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W
Mounting: THT
Technology: SiC
Case: TO220FP-2
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 36W
Load current: 12A
Max. load current: 34A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W
Mounting: THT
Technology: SiC
Case: TO220FP-2
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 36W
Load current: 12A
Max. load current: 34A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
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| SML-010MTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 1208
Luminosity: 5.6...25mcd
Operating voltage: 2.2...2.8V DC
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 1208
Luminosity: 5.6...25mcd
Operating voltage: 2.2...2.8V DC
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
на замовлення 2082 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.30 грн |
| 17+ | 23.49 грн |
| 100+ | 14.28 грн |
| 1000+ | 9.44 грн |
| BR25S320FVT-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: TSSOP-B8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: TSSOP-B8
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| BU4825F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Manufacturer series: BU48
Kind of RESET output: open drain
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Manufacturer series: BU48
Kind of RESET output: open drain
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BU4925F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BR25A1MFJ-3MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 1Mb EEPROM
Clock frequency: 10MHz
Memory organisation: 128kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 1Mb EEPROM
Clock frequency: 10MHz
Memory organisation: 128kx8bit
Kind of memory: EEPROM
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| BR25A256FJ-3MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 256kb EEPROM
Clock frequency: 10MHz
Memory organisation: 32kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 256kb EEPROM
Clock frequency: 10MHz
Memory organisation: 32kx8bit
Kind of memory: EEPROM
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| BR25A512FJ-3MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 512kb EEPROM
Clock frequency: 10MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 512kb EEPROM
Clock frequency: 10MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
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| BD2202G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.2A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.2A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6529GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
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| BD2200GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
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| BD6520F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6522F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6528HFV-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
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| 2SC4098T106P |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
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| RHK003N06FRAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RB085BGE-30TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Semiconductor structure: common cathode; double
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.01 грн |
| 10+ | 61.11 грн |
| 100+ | 45.08 грн |
| 250+ | 38.89 грн |
| 500+ | 38.17 грн |
| R6509KNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.















