Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101691) > Сторінка 1695 з 1695
| Фото | Назва | Виробник | Інформація |
Доступність |
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| SMLD12E3N1WT86 | ROHM SEMICONDUCTOR |
 Category: SMD colour LEDsDescription: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused Front: flat Type of diode: LED Mounting: SMD Wavelength: 496nm LED current: 5mA Luminosity: 85mcd LED colour: blue; green LED lens: diffused; white |
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В кошику од. на суму грн. | |||||||||||||||
| SMLD12E2N1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat Front: flat Type of diode: LED Mounting: SMD Wavelength: 505nm LED current: 5mA Luminosity: 120mcd LED colour: blue LED lens: diffused; white |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RQ3E100BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 40A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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RB160VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. forward impulse current: 5A Kind of package: reel; tape |
на замовлення 1771 шт: термін постачання 21-30 дні (днів) |
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| RB168VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Leakage current: 1µA Max. forward impulse current: 5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| R6020ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
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RB558VAM150TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Leakage current: 0.5µA Load current: 0.5A Max. forward voltage: 0.95V Max. forward impulse current: 3A Max. off-state voltage: 150V Case: SOD323HE Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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| SCS312AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA Mounting: THT Technology: SiC Case: TO220AC Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 78W Load current: 12A Max. load current: 52A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: tube |
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| SCS312AJTLL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape Mounting: SMD Technology: SiC Case: TO263AB Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 88W Load current: 12A Max. load current: 55A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| SCS312AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W Mounting: THT Technology: SiC Case: TO220FP-2 Type of diode: Schottky rectifying Leakage current: 240µA Max. forward voltage: 1.71V Power dissipation: 36W Load current: 12A Max. load current: 34A Max. off-state voltage: 650V Max. forward impulse current: 350A Semiconductor structure: single diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW Type of diode: LED LED colour: green Mounting: SMD Case: 1208 Luminosity: 5.6...25mcd Operating voltage: 2.2...2.8V DC Dimensions: 3x2x1.3mm LED current: 20mA Wavelength: 570nm LED lens: transparent Power: 70mW Front: flat |
на замовлення 2082 шт: термін постачання 21-30 дні (днів) |
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| BR25S320FVT-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8 Mounting: SMD Kind of package: reel; tape Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.7...5.5V DC Memory: 32kb EEPROM Memory organisation: 4kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Case: TSSOP-B8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BU4825F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Manufacturer series: BU48 Kind of RESET output: open drain Active logical level: low Mounting: SMD Kind of package: reel; tape Case: SOP4 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
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| BU4925F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU49 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Kind of package: reel; tape Case: SOP4 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy |
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В кошику од. на суму грн. | |||||||||||||||
| BR25A1MFJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 1Mb EEPROM Clock frequency: 10MHz Memory organisation: 128kx8bit Kind of memory: EEPROM |
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В кошику од. на суму грн. | |||||||||||||||
| BR25A256FJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8 Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 256kb EEPROM Clock frequency: 10MHz Memory organisation: 32kx8bit Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BR25A512FJ-3MGE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8 Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOP-J8 Interface: SPI Operating temperature: -40...105°C Access time: 5ms Supply voltage: 2.5...5.5V DC Memory: 512kb EEPROM Clock frequency: 10MHz Memory organisation: 64kx8bit Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD2202G-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SSOP5 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.2A Supply voltage: 2.7...5.5V Number of channels: 1 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD6529GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.1Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD2200GUL-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: VCSP50L1 Operating temperature: -25...85°C Active logical level: high Kind of output: N-Channel On-state resistance: 0.2Ω Output current: 0.5A Supply voltage: 2.7...5.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD6520F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD6522F-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8 Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Case: SOP8 Operating temperature: -25...85°C Kind of output: N-Channel On-state resistance: 0.85Ω Output current: 2A Supply voltage: 3...5.5V Number of channels: 2 Protection: over current OCP; overheating OTP; undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD6528HFV-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: load switch Mounting: SMD Operating temperature: -25...85°C Kind of output: N-Channel Control voltage: 0...2.7V DC On-state resistance: 0.11Ω Output current: 0.5A Supply voltage: 2.7...4.5V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SC4098T106P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323 Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 25V Current gain: 82...180 Frequency: 300MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB085BGE-30TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2 Case: DPAK; SC63; TO252 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.48V Load current: 5A x2 Max. off-state voltage: 30V Max. forward impulse current: 50A Leakage current: 0.3mA Semiconductor structure: common cathode; double |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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| R6509KNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP Kind of package: tube Case: TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 16.5nC On-state resistance: 1.1Ω Power dissipation: 48W Drain current: 9A Pulsed drain current: 27A Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IMX1T110 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN x2 Collector current: 0.15A Power dissipation: 0.3W Current gain: 120...560 Collector-emitter voltage: 50V Frequency: 180MHz Polarisation: bipolar |
на замовлення 2544 шт: термін постачання 21-30 дні (днів) |
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| DAN222WMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.1A Max. load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DAN222WMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Type of diode: switching Reverse recovery time: 4ns Load current: 0.1A Max. load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC115ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 82 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA033CC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Case: TO252-3 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 1A Voltage drop: 0.3V Number of channels: 1 Tolerance: ±2% Input voltage: 4...25V Output voltage: 3.3V |
на замовлення 2071 шт: термін постачання 21-30 дні (днів) |
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| BA33BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Case: TO252-3 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...105°C Output current: 1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±2% Input voltage: 3...16V Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BA33DD0WHFP-TR | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1% Case: HRP5 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 2A Voltage drop: 0.7V Number of channels: 1 Tolerance: ±1% Input voltage: 3...25V Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RFV8BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 45ns Max. forward voltage: 2.8V Load current: 8A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RFN10BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Max. forward voltage: 1.55V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RF305BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 3A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
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В кошику од. на суму грн. | |||||||||||||||
| RF305BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 3A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
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В кошику од. на суму грн. | |||||||||||||||
| RFN10BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Max. forward voltage: 1.55V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 0.6kV Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RVQ040N05TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
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В кошику од. на суму грн. | ||||||||||||||
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
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| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
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 |
R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 74nC On-state resistance: 143mΩ Drain current: 30A Gate-source voltage: ±30V Pulsed drain current: 90A Power dissipation: 370W Drain-source voltage: 600V Case: TO247 Polarisation: unipolar |
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| SMLD12E3N1WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 496nm
LED current: 5mA
Luminosity: 85mcd
LED colour: blue; green
LED lens: diffused; white
Category: SMD colour LEDs
Description: LED; blue,green; SMD; 85mcd; 5mA; 496nm; Lens: white,diffused
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 496nm
LED current: 5mA
Luminosity: 85mcd
LED colour: blue; green
LED lens: diffused; white
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| SMLD12E2N1WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 505nm
LED current: 5mA
Luminosity: 120mcd
LED colour: blue
LED lens: diffused; white
Category: SMD colour LEDs
Description: LED; blue; SMD; 120mcd; 5mA; 505nm; Lens: white,diffused; Front: flat
Front: flat
Type of diode: LED
Mounting: SMD
Wavelength: 505nm
LED current: 5mA
Luminosity: 120mcd
LED colour: blue
LED lens: diffused; white
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| RSQ030N08HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RQ3E100BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.19 грн |
| 18+ | 22.30 грн |
| 100+ | 16.03 грн |
| RB160VAM-60TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 5A
Kind of package: reel; tape
на замовлення 1771 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 27+ | 14.92 грн |
| 100+ | 9.10 грн |
| 500+ | 6.61 грн |
| 1000+ | 5.87 грн |
| RB168VAM-60TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Leakage current: 1µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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| R6020ENXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| RB558VAM150TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 0.5µA
Load current: 0.5A
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Max. off-state voltage: 150V
Case: SOD323HE
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 150V; 0.5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 0.5µA
Load current: 0.5A
Max. forward voltage: 0.95V
Max. forward impulse current: 3A
Max. off-state voltage: 150V
Case: SOD323HE
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 33+ | 12.38 грн |
| 50+ | 8.56 грн |
| 100+ | 7.29 грн |
| 500+ | 5.13 грн |
| SCS312AHGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA
Mounting: THT
Technology: SiC
Case: TO220AC
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 78W
Load current: 12A
Max. load current: 52A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 240uA
Mounting: THT
Technology: SiC
Case: TO220AC
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 78W
Load current: 12A
Max. load current: 52A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
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| SCS312AJTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Technology: SiC
Case: TO263AB
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 88W
Load current: 12A
Max. load current: 55A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SiC; SMD; 650V; 12A; reel,tape
Mounting: SMD
Technology: SiC
Case: TO263AB
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 88W
Load current: 12A
Max. load current: 55A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: reel; tape
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| SCS312AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W
Mounting: THT
Technology: SiC
Case: TO220FP-2
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 36W
Load current: 12A
Max. load current: 34A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220FP-2; 36W
Mounting: THT
Technology: SiC
Case: TO220FP-2
Type of diode: Schottky rectifying
Leakage current: 240µA
Max. forward voltage: 1.71V
Power dissipation: 36W
Load current: 12A
Max. load current: 34A
Max. off-state voltage: 650V
Max. forward impulse current: 350A
Semiconductor structure: single diode
Kind of package: tube
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| SML-010MTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 1208
Luminosity: 5.6...25mcd
Operating voltage: 2.2...2.8V DC
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 1208; 5.6÷25mcd; 2.2÷2.8VDC; 3x2x1.3mm; 20mA; 70mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 1208
Luminosity: 5.6...25mcd
Operating voltage: 2.2...2.8V DC
Dimensions: 3x2x1.3mm
LED current: 20mA
Wavelength: 570nm
LED lens: transparent
Power: 70mW
Front: flat
на замовлення 2082 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.30 грн |
| 17+ | 23.49 грн |
| 100+ | 14.28 грн |
| 1000+ | 9.44 грн |
| BR25S320FVT-WE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: TSSOP-B8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 20MHz; TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: TSSOP-B8
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| BU4825F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Manufacturer series: BU48
Kind of RESET output: open drain
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Manufacturer series: BU48
Kind of RESET output: open drain
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BU4925F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU49
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
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| BR25A1MFJ-3MGE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 1Mb EEPROM
Clock frequency: 10MHz
Memory organisation: 128kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 1Mb EEPROM
Clock frequency: 10MHz
Memory organisation: 128kx8bit
Kind of memory: EEPROM
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| BR25A256FJ-3MGE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 256kb EEPROM
Clock frequency: 10MHz
Memory organisation: 32kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 256kb EEPROM
Clock frequency: 10MHz
Memory organisation: 32kx8bit
Kind of memory: EEPROM
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| BR25A512FJ-3MGE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 512kb EEPROM
Clock frequency: 10MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOP-J8
Interface: SPI
Operating temperature: -40...105°C
Access time: 5ms
Supply voltage: 2.5...5.5V DC
Memory: 512kb EEPROM
Clock frequency: 10MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
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| BD2202G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.2A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 200mA; Ch: 1; N-Channel; SMD; SSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SSOP5
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.2A
Supply voltage: 2.7...5.5V
Number of channels: 1
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6529GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.1Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
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| BD2200GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: VCSP50L1
Operating temperature: -25...85°C
Active logical level: high
Kind of output: N-Channel
On-state resistance: 0.2Ω
Output current: 0.5A
Supply voltage: 2.7...5.5V
Number of channels: 1
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| BD6520F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6522F-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 2A; Ch: 2; N-Channel; SMD; SOP8
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Case: SOP8
Operating temperature: -25...85°C
Kind of output: N-Channel
On-state resistance: 0.85Ω
Output current: 2A
Supply voltage: 3...5.5V
Number of channels: 2
Protection: over current OCP; overheating OTP; undervoltage UVP
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| BD6528HFV-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 500mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: load switch
Mounting: SMD
Operating temperature: -25...85°C
Kind of output: N-Channel
Control voltage: 0...2.7V DC
On-state resistance: 0.11Ω
Output current: 0.5A
Supply voltage: 2.7...4.5V
Number of channels: 1
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| 2SC4098T106P |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
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| RHK003N06FRAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RB085BGE-30TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Leakage current: 0.3mA
Semiconductor structure: common cathode; double
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.01 грн |
| 10+ | 61.11 грн |
| 100+ | 45.08 грн |
| 250+ | 38.89 грн |
| 500+ | 38.17 грн |
| R6509KNXC7G |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 27A; 48W; TO220FP
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.5nC
On-state resistance: 1.1Ω
Power dissipation: 48W
Drain current: 9A
Pulsed drain current: 27A
Drain-source voltage: 650V
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| IMX1T110 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Current gain: 120...560
Collector-emitter voltage: 50V
Frequency: 180MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 0.15A
Power dissipation: 0.3W
Current gain: 120...560
Collector-emitter voltage: 50V
Frequency: 180MHz
Polarisation: bipolar
на замовлення 2544 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.38 грн |
| 44+ | 9.05 грн |
| 100+ | 6.35 грн |
| 500+ | 5.12 грн |
| 1000+ | 4.71 грн |
| DAN222WMFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
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| DAN222WMTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC89; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.1A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
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| DTC115ECAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Kind of package: reel; tape
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| BA033CC0FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 4...25V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 4...25V
Output voltage: 3.3V
на замовлення 2071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.32 грн |
| 6+ | 66.66 грн |
| 10+ | 61.11 грн |
| 25+ | 53.17 грн |
| 50+ | 49.20 грн |
| 100+ | 46.03 грн |
| 250+ | 45.24 грн |
| BA33BC0FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Case: TO252-3
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
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| BA33DD0WHFP-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1%
Case: HRP5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.7V
Number of channels: 1
Tolerance: ±1%
Input voltage: 3...25V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; HRP5; SMD; ±1%
Case: HRP5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 2A
Voltage drop: 0.7V
Number of channels: 1
Tolerance: ±1%
Input voltage: 3...25V
Output voltage: 3.3V
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| RFV8BM6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 45ns
Max. forward voltage: 2.8V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 45ns; DPAK; Ufmax: 2.8V; Ifsm: 100A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 45ns
Max. forward voltage: 2.8V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RFN10BM6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RF305BM6SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RF305BM6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RFN10BM6SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.55V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RVQ040N05TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RFN1L6SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
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| RBR2L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF201L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RBR3L40ADDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
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| RBR3L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF101L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RB050L-60DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| R6030JNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 74nC
On-state resistance: 143mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 90A
Power dissipation: 370W
Drain-source voltage: 600V
Case: TO247
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 74nC
On-state resistance: 143mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 90A
Power dissipation: 370W
Drain-source voltage: 600V
Case: TO247
Polarisation: unipolar
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