Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104142) > Сторінка 802 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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RGCL80TK60GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 600V 35A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/227ns Switching Energy: 1.11mJ (on), 1.68mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 98 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 57 W |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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RGT16NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 651 шт: термін постачання 21-31 дні (днів) |
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RGT16TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 9A TO-220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 22 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGT30NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A TO-262Power - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns IGBT Type: Trench Field Stop Supplier Device Package: TO-262 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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RGT30TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 14A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 32 W |
на замовлення 768 шт: термін постачання 21-31 дні (днів) |
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RGT40NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 40A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGT40TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 17A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 39 W |
на замовлення 1825 шт: термін постачання 21-31 дні (днів) |
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RGT50NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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RGT50TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 21A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
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RGT8NS65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
на замовлення 962 шт: термін постачання 21-31 дні (днів) |
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RGT8TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 5A TO-220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 16 W |
на замовлення 698 шт: термін постачання 21-31 дні (днів) |
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RGTH00TK65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 35A TO-3PFMPower - Max: 72 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 35 A Part Status: Active Gate Charge: 94 nC Test Condition: 400V, 50A, 10Ohm, 15V Td (on/off) @ 25°C: 39ns/143ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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RGTH60TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 28A TO-3PFMPower - Max: 61 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 28 A Part Status: Active Gate Charge: 58 nC Test Condition: 400V, 30A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
на замовлення 403 шт: термін постачання 21-31 дні (днів) |
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RGTH60TK65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 28A TO3PFMCurrent - Collector (Ic) (Max): 28 A Part Status: Active Gate Charge: 58 nC Test Condition: 400V, 30A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Power - Max: 61 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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RGTH80TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 31A TO3PFMTd (on/off) @ 25°C: 34ns/120ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 66 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 31 A Part Status: Active Gate Charge: 79 nC Test Condition: 400V, 40A, 10Ohm, 15V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGTVX6TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 144A TO247NPower - Max: 404 W Current - Collector Pulsed (Icm): 320 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 144 A Part Status: Not For New Designs Gate Charge: 171 nC Test Condition: 400V, 80A, 10Ohm, 15V Switching Energy: 2.65mJ (on), 1.8mJ (off) Td (on/off) @ 25°C: 45ns/201ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Reverse Recovery Time (trr): 109 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 387 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V9LT116 | Rohm Semiconductor |
Description: DIODE ZENER 3.9V 250MW SSD3Current - Reverse Leakage @ Vr: 3 µA @ 1 V Power - Max: 250 mW Part Status: Not For New Designs Supplier Device Package: SSD3 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V9LT116 | Rohm Semiconductor |
Description: DIODE ZENER 3.9V 250MW SSD3Current - Reverse Leakage @ Vr: 3 µA @ 1 V Power - Max: 250 mW Part Status: Not For New Designs Supplier Device Package: SSD3 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5.12% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C5V6LT116 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 250MW SSD3Packaging: Tape & Reel (TR) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX84C5V6LT116 | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 250MW SSD3Packaging: Cut Tape (CT) Tolerance: ±7.14% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SSD3 Part Status: Not For New Designs Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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RGT16BM65DTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGT16BM65DTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RGT16NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RGT16NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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RGT30NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A LPDSPower - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns IGBT Type: Trench Field Stop Supplier Device Package: LPDS Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RGT30NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 30A LPDSIGBT Type: Trench Field Stop Supplier Device Package: LPDS Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Reverse Recovery Time (trr): 55 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Power - Max: 133 W Current - Collector Pulsed (Icm): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 32 nC Test Condition: 400V, 15A, 10Ohm, 15V Td (on/off) @ 25°C: 18ns/64ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGT40NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RGT40NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
на замовлення 1962 шт: термін постачання 21-31 дні (днів) |
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RGT50NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGT50NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
на замовлення 1357 шт: термін постачання 21-31 дні (днів) |
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RGT8NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RGT8NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 8A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
на замовлення 972 шт: термін постачання 21-31 дні (днів) |
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RRD07MM4STR | Rohm Semiconductor |
Description: PMDU RECTIFYING DIODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RRD07MM4STR | Rohm Semiconductor |
Description: PMDU RECTIFYING DIODE |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BM2P0161-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161Power - Output: 7.5 W Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Primary and Secondary Side Utilized IC / Part: BM2P0161 Regulator Topology: Buck Frequency - Switching: 65kHz Contents: Board(s) Current - Output: 500mA Voltage - Input: 90 ~ 264 VAC Voltage - Output: 15V Packaging: Box |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BM2P0161-EVK-002 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161Power - Output: 6 W Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Primary and Secondary Side Utilized IC / Part: BM2P0161 Regulator Topology: Buck Frequency - Switching: 65kHz Contents: Board(s) Current - Output: 500mA Voltage - Input: 90 ~ 264 VAC Voltage - Output: 12V Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BM2P0161-EVK-003 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P0161 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BD62120AEFJ-E2 | Rohm Semiconductor |
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 2A Interface: On/Off Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 28V Applications: Printer Technology: DMOS Supplier Device Package: 8-HTSOP-J Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 33373 шт: термін постачання 21-31 дні (днів) |
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BD63130AFM-E2 | Rohm Semiconductor |
Description: H-BRIDGE MOTOR DRIVER FOR DC BRUMounting Type: Surface Mount Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs Packaging: Cut Tape (CT) Part Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 36-HSOP-M Technology: DMOS Applications: Printer Voltage - Supply: 8V ~ 46.2V Output Configuration: Pre-Driver - Half Bridge (2) Operating Temperature: -25°C ~ 85°C (TA) Interface: On/Off Current - Output: 3A Function: Driver |
на замовлення 5102 шт: термін постачання 21-31 дні (днів) |
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BD63565EFV-E2 | Rohm Semiconductor |
Description: DUAL H-BRIDGE MOTOR DRIVER WHICHPart Status: Active Motor Type - AC, DC: Brushed DC Supplier Device Package: 20-HTSSOP-B Voltage - Load: 1.8V ~ 16V Technology: DMOS Applications: Appliance Voltage - Supply: 2.5V ~ 5.5V Output Configuration: Pre-Driver - Half Bridge (2) Current - Output: 1A Function: Driver Mounting Type: Surface Mount Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 85°C Interface: PWM |
на замовлення 2101 шт: термін постачання 21-31 дні (днів) |
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EM6K7T2CR | Rohm Semiconductor |
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL |
на замовлення 7962 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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QH8K51TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A TSMT8Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 16760 шт: термін постачання 21-31 дні (днів) |
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RD3P08BBDTL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 80A TO252Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 119W (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 9836 шт: термін постачання 21-31 дні (днів) |
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RF4C100BCTCR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 10A HUML2020L8Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 2W (Ta) |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
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RF4E060AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 6A HUML2020L8Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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RF6E065BNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 6.5A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 910mW (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 8968 шт: термін постачання 21-31 дні (днів) |
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RJ1P12BBDTLL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 120A LPTLInput Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: LPTL Vgs(th) (Max) @ Id: 4V @ 2.5mA Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RQ1E075XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7.5A TSMT8Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA |
на замовлення 26828 шт: термін постачання 21-31 дні (днів) |
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RQ5E020SPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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RQ5E025SNTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ5E025SPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RQ5E035XNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 5951 шт: термін постачання 21-31 дні (днів) |
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RQ5E040RPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A TSMT3FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
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RQ5E050ATTCL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V |
на замовлення 11580 шт: термін постачання 21-31 дні (днів) |
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RQ5E065AJTCL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 6.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 2mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V |
на замовлення 6163 шт: термін постачання 21-31 дні (днів) |
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RQ5L030SNTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
на замовлення 9744 шт: термін постачання 21-31 дні (днів) |
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RQ5L035GNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V |
на замовлення 3254 шт: термін постачання 21-31 дні (днів) |
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RQ6A050ZPTR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 4938 шт: термін постачання 21-31 дні (днів) |
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RQ6E040XNTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT6Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 2789 шт: термін постачання 21-31 дні (днів) |
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RQ6E045TNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) |
на замовлення 1560 шт: термін постачання 21-31 дні (днів) |
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| RGCL80TK60GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
Description: IGBT TRNCH FIELD 600V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/227ns
Switching Energy: 1.11mJ (on), 1.68mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 57 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 365.79 грн |
| 10+ | 295.78 грн |
| RGT16NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.09 грн |
| 50+ | 117.55 грн |
| 100+ | 106.29 грн |
| 500+ | 81.22 грн |
| RGT16TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
Description: IGBT TRENCH FS 650V 9A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 22 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.45 грн |
| 10+ | 140.60 грн |
| 100+ | 97.85 грн |
| 500+ | 79.45 грн |
| RGT30NS65DGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A TO-262
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: IGBT TRENCH FS 650V 30A TO-262
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.07 грн |
| 50+ | 125.39 грн |
| 100+ | 113.60 грн |
| 500+ | 95.47 грн |
| RGT30TM65DGC9 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
Description: IGBT TRENCH FS 650V 14A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 32 W
на замовлення 768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.94 грн |
| 50+ | 130.95 грн |
| 100+ | 118.60 грн |
| 500+ | 91.02 грн |
| RGT40NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FIELD 650V 40A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.81 грн |
| 10+ | 130.35 грн |
| 100+ | 98.19 грн |
| RGT40TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
Description: IGBT TRENCH FS 650V 17A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 39 W
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.23 грн |
| 50+ | 146.91 грн |
| 100+ | 133.35 грн |
| 500+ | 102.82 грн |
| 1000+ | 95.65 грн |
| RGT50NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 319.97 грн |
| 50+ | 159.55 грн |
| 100+ | 145.21 грн |
| 500+ | 112.67 грн |
| RGT50TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
на замовлення 864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.75 грн |
| 50+ | 159.16 грн |
| 100+ | 144.67 грн |
| 500+ | 111.92 грн |
| RGT8NS65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.74 грн |
| 50+ | 46.34 грн |
| 100+ | 41.29 грн |
| 500+ | 30.43 грн |
| RGT8TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
Description: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
на замовлення 698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.04 грн |
| 50+ | 94.44 грн |
| 100+ | 85.06 грн |
| 500+ | 64.38 грн |
| RGTH00TK65GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Power - Max: 72 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 35 A
Part Status: Active
Gate Charge: 94 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Td (on/off) @ 25°C: 39ns/143ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.14 грн |
| 30+ | 148.45 грн |
| 120+ | 121.37 грн |
| RGTH60TK65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.70 грн |
| 30+ | 145.06 грн |
| 120+ | 118.52 грн |
| RGTH60TK65GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRNCH FIELD 650V 28A TO3PFM
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 399.97 грн |
| 30+ | 305.16 грн |
| 120+ | 261.55 грн |
| RGTH80TK65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Td (on/off) @ 25°C: 34ns/120ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 66 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 31 A
Part Status: Active
Gate Charge: 79 nC
Test Condition: 400V, 40A, 10Ohm, 15V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 370.45 грн |
| 30+ | 211.85 грн |
| RGTVX6TS65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FLD 650V 144A TO247N
Power - Max: 404 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 144 A
Part Status: Not For New Designs
Gate Charge: 171 nC
Test Condition: 400V, 80A, 10Ohm, 15V
Switching Energy: 2.65mJ (on), 1.8mJ (off)
Td (on/off) @ 25°C: 45ns/201ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
Reverse Recovery Time (trr): 109 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 619.75 грн |
| 10+ | 427.11 грн |
| BZX84C3V9LT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Tape & Reel (TR)
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В кошику
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| BZX84C3V9LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.9V 250MW SSD3
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 250 mW
Part Status: Not For New Designs
Supplier Device Package: SSD3
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5.12%
Packaging: Cut Tape (CT)
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В кошику
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| BZX84C5V6LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84C5V6LT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW SSD3
Packaging: Cut Tape (CT)
Tolerance: ±7.14%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SSD3
Part Status: Not For New Designs
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.20 грн |
| 39+ | 7.85 грн |
| 100+ | 4.89 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.95 грн |
| RGT16BM65DTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 62.01 грн |
| 5000+ | 56.09 грн |
| RGT16BM65DTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.25 грн |
| 10+ | 127.36 грн |
| 100+ | 87.90 грн |
| 500+ | 66.64 грн |
| 1000+ | 64.43 грн |
| RGT16NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RGT16NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.67 грн |
| 10+ | 140.38 грн |
| 100+ | 97.69 грн |
| 500+ | 74.57 грн |
| RGT30NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT TRENCH FS 650V 30A LPDS
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RGT30NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
Description: IGBT TRENCH FS 650V 30A LPDS
IGBT Type: Trench Field Stop
Supplier Device Package: LPDS
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 133 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C: 18ns/64ns
товару немає в наявності
В кошику
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| RGT40NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RGT40NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
Description: IGBT TRENCH FS 650V 40A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
на замовлення 1962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.70 грн |
| 10+ | 174.48 грн |
| 100+ | 122.96 грн |
| 500+ | 104.73 грн |
| RGT50NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 105.86 грн |
| RGT50NL65DGTL |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
на замовлення 1357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.12 грн |
| 10+ | 187.72 грн |
| 100+ | 132.87 грн |
| 500+ | 115.11 грн |
| RGT8NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RGT8NL65DGTL |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
Description: IGBT TRENCH FS 650V 8A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 65 W
на замовлення 972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.72 грн |
| 10+ | 117.79 грн |
| 100+ | 81.10 грн |
| 500+ | 62.97 грн |
| RRD07MM4STR |
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Виробник: Rohm Semiconductor
Description: PMDU RECTIFYING DIODE
Description: PMDU RECTIFYING DIODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RRD07MM4STR |
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Виробник: Rohm Semiconductor
Description: PMDU RECTIFYING DIODE
Description: PMDU RECTIFYING DIODE
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
| BM2P0161-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
Description: EVAL BOARD FOR BM2P0161
Power - Output: 7.5 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 15V
Packaging: Box
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7820.70 грн |
| BM2P0161-EVK-002 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
Description: EVAL BOARD FOR BM2P0161
Power - Output: 6 W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary and Secondary Side
Utilized IC / Part: BM2P0161
Regulator Topology: Buck
Frequency - Switching: 65kHz
Contents: Board(s)
Current - Output: 500mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7820.70 грн |
| BM2P0161-EVK-003 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P0161
Description: EVAL BOARD FOR BM2P0161
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9175.93 грн |
| BD62120AEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BUILT-IN 1 CHANNEL H-BRIDGE MOTO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 8-HTSOP-J
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 33373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.55 грн |
| 10+ | 110.16 грн |
| 25+ | 100.48 грн |
| 100+ | 84.36 грн |
| 250+ | 79.62 грн |
| 500+ | 77.28 грн |
| BD63130AFM-E2 |
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Виробник: Rohm Semiconductor
Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
Description: H-BRIDGE MOTOR DRIVER FOR DC BRU
Mounting Type: Surface Mount
Package / Case: 36-SOP (0.295", 7.50mm Width) + 2 Heat Tabs
Packaging: Cut Tape (CT)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 36-HSOP-M
Technology: DMOS
Applications: Printer
Voltage - Supply: 8V ~ 46.2V
Output Configuration: Pre-Driver - Half Bridge (2)
Operating Temperature: -25°C ~ 85°C (TA)
Interface: On/Off
Current - Output: 3A
Function: Driver
на замовлення 5102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 326.19 грн |
| 10+ | 239.32 грн |
| 25+ | 220.62 грн |
| 100+ | 187.72 грн |
| 250+ | 178.50 грн |
| 500+ | 172.95 грн |
| BD63565EFV-E2 |
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Виробник: Rohm Semiconductor
Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
Description: DUAL H-BRIDGE MOTOR DRIVER WHICH
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 20-HTSSOP-B
Voltage - Load: 1.8V ~ 16V
Technology: DMOS
Applications: Appliance
Voltage - Supply: 2.5V ~ 5.5V
Output Configuration: Pre-Driver - Half Bridge (2)
Current - Output: 1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 85°C
Interface: PWM
на замовлення 2101 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.51 грн |
| 10+ | 131.03 грн |
| 25+ | 119.90 грн |
| 100+ | 101.02 грн |
| 250+ | 95.53 грн |
| 500+ | 92.22 грн |
| 1000+ | 88.03 грн |
| EM6K7T2CR |
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Виробник: Rohm Semiconductor
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
Description: 1.2V DRIVE NCH+NCH MOSFET. COMPL
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)
| QH8K51TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 100V 2A TSMT8
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1.1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 16760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 59.01 грн |
| 100+ | 45.89 грн |
| 500+ | 36.50 грн |
| 1000+ | 29.74 грн |
| RD3P08BBDTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 80A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 119W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 9836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.90 грн |
| 10+ | 172.83 грн |
| 100+ | 137.62 грн |
| 500+ | 109.27 грн |
| 1000+ | 92.72 грн |
| RF4C100BCTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
Description: MOSFET P-CH 20V 10A HUML2020L8
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 2W (Ta)
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.98 грн |
| 10+ | 52.87 грн |
| 100+ | 34.83 грн |
| 500+ | 25.42 грн |
| RF4E060AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 30V 6A HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.93 грн |
| RF6E065BNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 6.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8968 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.81 грн |
| 10+ | 43.08 грн |
| 100+ | 28.64 грн |
| 500+ | 20.88 грн |
| 1000+ | 18.88 грн |
| RJ1P12BBDTLL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 120A LPTL
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: LPTL
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 120A LPTL
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: LPTL
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 358.80 грн |
| 10+ | 265.57 грн |
| 100+ | 221.67 грн |
| 500+ | 180.82 грн |
| RQ1E075XNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Description: MOSFET N-CH 30V 7.5A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
на замовлення 26828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.69 грн |
| 10+ | 47.19 грн |
| 100+ | 32.67 грн |
| 500+ | 25.62 грн |
| 1000+ | 21.80 грн |
| RQ5E020SPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.91 грн |
| 10+ | 37.47 грн |
| 100+ | 24.24 грн |
| 500+ | 17.41 грн |
| 1000+ | 15.69 грн |
| RQ5E025SNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.38 грн |
| 10+ | 33.58 грн |
| 100+ | 25.07 грн |
| 500+ | 18.48 грн |
| 1000+ | 14.28 грн |
| RQ5E025SPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.80 грн |
| 10+ | 35.75 грн |
| 100+ | 23.18 грн |
| 500+ | 16.68 грн |
| 1000+ | 15.05 грн |
| RQ5E035XNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 5951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.14 грн |
| 10+ | 32.61 грн |
| 100+ | 21.12 грн |
| 500+ | 15.15 грн |
| 1000+ | 13.65 грн |
| RQ5E040RPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Description: MOSFET P-CH 30V 4A TSMT3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
на замовлення 1370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 41.13 грн |
| 100+ | 26.87 грн |
| 500+ | 19.45 грн |
| 1000+ | 17.59 грн |
| RQ5E050ATTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Description: MOSFET P-CH 30V 5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
на замовлення 11580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.67 грн |
| 10+ | 42.78 грн |
| 100+ | 28.02 грн |
| 500+ | 20.32 грн |
| 1000+ | 18.39 грн |
| RQ5E065AJTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Description: MOSFET N-CH 30V 6.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
на замовлення 6163 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 45.69 грн |
| 100+ | 29.97 грн |
| 500+ | 21.79 грн |
| 1000+ | 19.75 грн |
| RQ5L030SNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
на замовлення 9744 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.12 грн |
| 10+ | 41.66 грн |
| 100+ | 27.24 грн |
| 500+ | 19.75 грн |
| 1000+ | 17.87 грн |
| RQ5L035GNTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Description: MOSFET N-CH 60V 3.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
на замовлення 3254 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.66 грн |
| 10+ | 46.74 грн |
| 100+ | 30.69 грн |
| 500+ | 22.34 грн |
| 1000+ | 20.25 грн |
| RQ6A050ZPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 4938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 60.13 грн |
| 100+ | 39.79 грн |
| 500+ | 29.13 грн |
| 1000+ | 26.49 грн |
| RQ6E040XNTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 4A TSMT6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 2789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.26 грн |
| 10+ | 34.78 грн |
| 100+ | 23.21 грн |
| 500+ | 16.66 грн |
| 1000+ | 15.01 грн |
| RQ6E045TNTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.49 грн |
| 10+ | 32.91 грн |
| 100+ | 25.40 грн |
| 500+ | 19.52 грн |
| 1000+ | 17.63 грн |




























