Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105895) > Сторінка 798 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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BD9329AEFJ_EVK | Rohm Semiconductor |
Description: EVAL BOARD FOR BD9329AContents: Board(s) Part Status: Obsolete Outputs and Type: 1 Non-Isolated Output Main Purpose: DC/DC, Step Down Supplied Contents: Board(s) Utilized IC / Part: BD9329A Board Type: Fully Populated Regulator Topology: Buck Frequency - Switching: 380kHz Current - Output: 3A Packaging: Bulk Voltage - Input: 4.2V ~ 18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ML9272MBZ03A | Rohm Semiconductor |
Description: IC VFD DRIVER 40 BIT 60SSOP Supplier Device Package: 60-SSOP Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Display Type: Vacuum Fluorescent (VF) Package / Case: 60-BSSOP (0.551", 14.00mm Width) Packaging: Tray |
на замовлення 897 шт: термін постачання 21-31 дні (днів) |
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BD9110NV-E2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2A SON008V5060Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -25°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 1MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: SON008V5060 Synchronous Rectifier: Yes Voltage - Output (Max): 2.5V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1V Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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RTQ045N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSQ020N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RTQ035N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6Grade: Automotive FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RTR025P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RTR030P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: TSMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSR020N06HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RSQ035N06HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSR030N06HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RTR030N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RTR025N03HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RTR020P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TSMT3Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 700mW (Ta) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RUR040N02HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.3V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RTR025N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RTR020N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RTQ020N05HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT6Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSR010N10HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RSQ015N06HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 1.5A TSMT6Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Grade: Automotive Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RTQ035P02HZGTR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3.5A TSMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSQ045N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: TSMT6 (SC-95) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSR025N03HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT3 Qualification: AEC-Q101 Grade: Automotive Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RTR040N03HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSQ035N06HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT6Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 6234 шт: термін постачання 21-31 дні (днів) |
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RTR030N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7623 шт: термін постачання 21-31 дні (днів) |
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RTQ045N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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RSR010N10HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16865 шт: термін постачання 21-31 дні (днів) |
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RSQ020N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 |
на замовлення 687 шт: термін постачання 21-31 дні (днів) |
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RUR040N02HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.3V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 5886 шт: термін постачання 21-31 дні (днів) |
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RTR020P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 13189 шт: термін постачання 21-31 дні (днів) |
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RTQ035N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RTR025N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 7724 шт: термін постачання 21-31 дні (днів) |
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RTR025P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A TSMT3Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4326 шт: термін постачання 21-31 дні (днів) |
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RTR025N03HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
на замовлення 12104 шт: термін постачання 21-31 дні (днів) |
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RTR020N05HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3Package / Case: SC-96 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 5375 шт: термін постачання 21-31 дні (днів) |
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RTR030P02HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3A TSMT3Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2V @ 34µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 1304 шт: термін постачання 21-31 дні (днів) |
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RSQ045N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) |
на замовлення 3014 шт: термін постачання 21-31 дні (днів) |
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RSR030N06HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 692 шт: термін постачання 21-31 дні (днів) |
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RSQ015N06HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 1.5A TSMT6Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Grade: Automotive Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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RTQ035P02HZGTR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 3.5A TSMT6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2591 шт: термін постачання 21-31 дні (днів) |
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RTR040N03HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2513 шт: термін постачання 21-31 дні (днів) |
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RSR020N06HZGTL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11248 шт: термін постачання 21-31 дні (днів) |
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RTQ020N05HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT6Qualification: AEC-Q101 Grade: Automotive Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) |
на замовлення 981 шт: термін постачання 21-31 дні (днів) |
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LB-602EA2 | Rohm Semiconductor |
Description: DISPLAY 7SEG 0.56" DBL ORG 18DIPPackaging: Bulk Package / Case: 18-DIP (0.600", 15.24mm) Color: Orange Display Type: 7-Segment Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm) Number of Characters: 2 Millicandela Rating: 90mcd Common Pin: Common Anode Digit/Alpha Size: 0.56" (14.30mm) Voltage - Forward (Vf) (Typ): 2.05V Current - Test: 25mA Wavelength - Peak: 610nm Power Dissipation (Max): 65mW |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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BC847BU3T106 | Rohm Semiconductor |
Description: TRANS NPN 45V 0.1A UMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: UMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BD82046FVJ-GE2 | Rohm Semiconductor |
Description: BD82046FVJ IS A SINGLE CHANNEL HFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 3.2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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BD82045FVJ-GE2 | Rohm Semiconductor |
Description: 2.5A CURRENT LIMIT HIGH SIDE SWIFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 2.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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BD82042FVJ-GE2 | Rohm Semiconductor |
Description: 2.0A CURRENT LIMIT HIGH SIDE SWIFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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BD82043FVJ-GE2 | Rohm Semiconductor |
Description: 2.0A CURRENT LIMIT HIGH SIDE SWIFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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BD82041FVJ-GE2 | Rohm Semiconductor |
Description: 1.5A CURRENT LIMIT HIGH SIDE SWIFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2SARA41CHZGT116R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A SST3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 50 mA Part Status: Active Supplier Device Package: SST3 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BD63282EFV-E2 | Rohm Semiconductor |
Description: THREE-PHASE FULL-WAVE FAN MOTORPackaging: Tape & Reel (TR) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 1A Interface: Logic Operating Temperature: -40°C ~ 100°C Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5V ~ 16V Applications: General Purpose Technology: DMOS Supplier Device Package: 20-HTSSOP-B Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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UM2222AU3T106 | Rohm Semiconductor |
Description: TRANS NPN 40V 0.6A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BC857BU3T106 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.1A UMT3Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BD18345EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRIVER CTRLR PWM 20HTSSOPQualification: AEC-Q100 Grade: Automotive Part Status: Active Voltage - Supply (Max): 19V Voltage - Supply (Min): 4.5V Dimming: PWM Supplier Device Package: 20-HTSSOP-B Internal Switch(s): No Operating Temperature: -40°C ~ 125°C (TA) Type: DC DC Controller Frequency: 100Hz ~ 5kHz Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD82047FVJ-GE2 | Rohm Semiconductor |
Description: 3.2A CURRENT LIMIT HIGH SIDE SWIFault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-TSSOP-BJ Ratio - Input:Output: 1:1 Current - Output (Max): 3.2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 72mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Load Discharge, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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2SAR372P5T100Q | Rohm Semiconductor |
Description: TRANS PNP 120V 0.7A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: MPT3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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RQ7E100ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A TSMT8Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BD82044FVJ-GE2 | Rohm Semiconductor |
Description: 2.5A CURRENT LIMIT HIGH SIDE SWIFeatures: Load Discharge, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 72mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TSSOP-BJ Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| BD9329AEFJ_EVK |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD9329A
Contents: Board(s)
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: BD9329A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 380kHz
Current - Output: 3A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
Description: EVAL BOARD FOR BD9329A
Contents: Board(s)
Part Status: Obsolete
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: BD9329A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 380kHz
Current - Output: 3A
Packaging: Bulk
Voltage - Input: 4.2V ~ 18V
товару немає в наявності
В кошику
од. на суму грн.
| ML9272MBZ03A |
Виробник: Rohm Semiconductor
Description: IC VFD DRIVER 40 BIT 60SSOP
Supplier Device Package: 60-SSOP
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Display Type: Vacuum Fluorescent (VF)
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Packaging: Tray
Description: IC VFD DRIVER 40 BIT 60SSOP
Supplier Device Package: 60-SSOP
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Display Type: Vacuum Fluorescent (VF)
Package / Case: 60-BSSOP (0.551", 14.00mm Width)
Packaging: Tray
на замовлення 897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 704.91 грн |
| 10+ | 459.13 грн |
| 25+ | 401.69 грн |
| 80+ | 324.47 грн |
| 230+ | 288.61 грн |
| 440+ | 284.68 грн |
| BD9110NV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
Description: IC REG BUCK ADJ 2A SON008V5060
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -25°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: SON008V5060
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1V
Part Status: Not For New Designs
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| RTQ045N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSQ020N03HZGTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2A TSMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RTQ035N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Description: MOSFET N-CH 30V 3.5A TSMT6
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.12 грн |
| 6000+ | 17.67 грн |
| RTR025P02HZGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.30 грн |
| RTR030P02HZGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSR020N06HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.54 грн |
| 6000+ | 13.77 грн |
| 9000+ | 13.17 грн |
| RSQ035N06HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.00 грн |
| RSR030N06HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RTR030N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.00 грн |
| RTR025N03HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.16 грн |
| 6000+ | 11.50 грн |
| RTR020P02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 700mW (Ta)
Description: MOSFET P-CH 20V 2A TSMT3
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 700mW (Ta)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.13 грн |
| 6000+ | 17.92 грн |
| 9000+ | 17.18 грн |
| RUR040N02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.91 грн |
| RTR025N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.81 грн |
| 6000+ | 14.01 грн |
| RTR020N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 45V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.82 грн |
| RTQ020N05HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Description: MOSFET N-CH 45V 2A TSMT6
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSR010N10HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.35 грн |
| 9000+ | 18.18 грн |
| RSQ015N06HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RTQ035P02HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSQ045N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.13 грн |
| RSR025N03HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 2.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT3
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RTR040N03HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSQ035N06HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 6234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 52.61 грн |
| 50+ | 39.02 грн |
| 100+ | 32.48 грн |
| 500+ | 25.20 грн |
| RTR030N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.19 грн |
| 10+ | 54.75 грн |
| 50+ | 40.64 грн |
| 100+ | 33.84 грн |
| 500+ | 26.30 грн |
| RTQ045N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 4.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 1908 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.47 грн |
| 10+ | 43.68 грн |
| 100+ | 30.72 грн |
| 500+ | 23.65 грн |
| 1000+ | 21.42 грн |
| RSR010N10HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 51.69 грн |
| 50+ | 38.19 грн |
| 100+ | 31.75 грн |
| 500+ | 24.56 грн |
| RSQ020N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.23 грн |
| 10+ | 38.56 грн |
| 100+ | 25.11 грн |
| 500+ | 18.11 грн |
| RUR040N02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 4A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 5886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 45.97 грн |
| 100+ | 31.80 грн |
| 500+ | 24.93 грн |
| 1000+ | 21.22 грн |
| RTR020P02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 13189 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.18 грн |
| 100+ | 31.70 грн |
| 500+ | 23.08 грн |
| 1000+ | 20.93 грн |
| RTQ035N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.67 грн |
| 10+ | 49.10 грн |
| 100+ | 32.10 грн |
| 500+ | 23.29 грн |
| 1000+ | 21.09 грн |
| RTR025N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 45V 2.5A TSMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 7724 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 38.94 грн |
| 100+ | 25.37 грн |
| 500+ | 18.31 грн |
| 1000+ | 16.54 грн |
| RTR025P02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT3
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2.5A TSMT3
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 48.64 грн |
| 100+ | 31.95 грн |
| 500+ | 23.26 грн |
| 1000+ | 21.10 грн |
| RTR025N03HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Description: MOSFET N-CH 30V 2.5A TSMT3
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
на замовлення 12104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.16 грн |
| 10+ | 30.77 грн |
| 100+ | 22.19 грн |
| 500+ | 17.84 грн |
| 1000+ | 15.31 грн |
| RTR020N05HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 45V 2A TSMT3
Package / Case: SC-96
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 5375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 41.54 грн |
| 100+ | 27.03 грн |
| 500+ | 19.50 грн |
| 1000+ | 17.60 грн |
| RTR030P02HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TSMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 34µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3A TSMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2V @ 34µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 1304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.02 грн |
| 10+ | 53.53 грн |
| 100+ | 35.35 грн |
| 500+ | 25.84 грн |
| 1000+ | 23.48 грн |
| RSQ045N03HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
на замовлення 3014 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.26 грн |
| 10+ | 50.55 грн |
| 100+ | 33.70 грн |
| 500+ | 25.37 грн |
| 1000+ | 23.00 грн |
| RSR030N06HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.02 грн |
| 10+ | 53.37 грн |
| 50+ | 39.57 грн |
| 100+ | 32.93 грн |
| 500+ | 25.52 грн |
| RSQ015N06HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 1.5A TSMT6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 41.00 грн |
| 50+ | 30.15 грн |
| RTQ035P02HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 54.44 грн |
| 100+ | 37.70 грн |
| 500+ | 29.56 грн |
| 1000+ | 25.16 грн |
| RTR040N03HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.71 грн |
| 10+ | 47.04 грн |
| 100+ | 30.76 грн |
| 500+ | 22.29 грн |
| 1000+ | 20.18 грн |
| RSR020N06HZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 38.25 грн |
| 100+ | 24.92 грн |
| 500+ | 17.99 грн |
| 1000+ | 16.25 грн |
| RTQ020N05HZGTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Description: MOSFET N-CH 45V 2A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
на замовлення 981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.58 грн |
| 10+ | 39.09 грн |
| 100+ | 27.21 грн |
| 500+ | 19.94 грн |
| LB-602EA2 |
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Виробник: Rohm Semiconductor
Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
Description: DISPLAY 7SEG 0.56" DBL ORG 18DIP
Packaging: Bulk
Package / Case: 18-DIP (0.600", 15.24mm)
Color: Orange
Display Type: 7-Segment
Size / Dimension: 0.748" H x 0.984" W x 0.315" D (19.00mm x 25.00mm x 8.00mm)
Number of Characters: 2
Millicandela Rating: 90mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.56" (14.30mm)
Voltage - Forward (Vf) (Typ): 2.05V
Current - Test: 25mA
Wavelength - Peak: 610nm
Power Dissipation (Max): 65mW
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 612.93 грн |
| 10+ | 450.65 грн |
| BC847BU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 45V 0.1A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 45V 0.1A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD82046FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: BD82046FVJ IS A SINGLE CHANNEL H
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: BD82046FVJ IS A SINGLE CHANNEL H
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD82045FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 2.5A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: 2.5A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD82042FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 2.0A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: 2.0A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD82043FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 2.0A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: 2.0A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD82041FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 1.5A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: 1.5A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.83 грн |
| 2SARA41CHZGT116R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A SST3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SST3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 120V 0.05A SST3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SST3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD63282EFV-E2 |
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Виробник: Rohm Semiconductor
Description: THREE-PHASE FULL-WAVE FAN MOTOR
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 1A
Interface: Logic
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Description: THREE-PHASE FULL-WAVE FAN MOTOR
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 1A
Interface: Logic
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: DMOS
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| UM2222AU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS NPN 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.77 грн |
| BC857BU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.1A UMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
Description: TRANS PNP 45V 0.1A UMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD18345EFV-ME2 |
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Виробник: Rohm Semiconductor
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 19V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: 20-HTSSOP-B
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 100Hz ~ 5kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 19V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: 20-HTSSOP-B
Internal Switch(s): No
Operating Temperature: -40°C ~ 125°C (TA)
Type: DC DC Controller
Frequency: 100Hz ~ 5kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 115.47 грн |
| BD82047FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 3.2A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Description: 3.2A CURRENT LIMIT HIGH SIDE SWI
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-TSSOP-BJ
Ratio - Input:Output: 1:1
Current - Output (Max): 3.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 72mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SAR372P5T100Q |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: MPT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 120V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: MPT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RQ7E100ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 10A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD82044FVJ-GE2 |
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Виробник: Rohm Semiconductor
Description: 2.5A CURRENT LIMIT HIGH SIDE SWI
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 72mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TSSOP-BJ
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: 2.5A CURRENT LIMIT HIGH SIDE SWI
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 72mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TSSOP-BJ
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.

















