Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105894) > Сторінка 874 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BA30DD0WT | Rohm Semiconductor |
Description: IC REG LINEAR 3V 2A TO220FP-5 |
на замовлення 466 шт: термін постачання 21-31 дні (днів) |
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BD00FD0WHFP-TR | Rohm Semiconductor |
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BD00FD0WHFP-TR | Rohm Semiconductor |
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC |
на замовлення 1467 шт: термін постачання 21-31 дні (днів) |
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EMX51T2R | Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2Supplier Device Package: EMT6 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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EMX51T2R | Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) |
на замовлення 7985 шт: термін постачання 21-31 дні (днів) |
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EMH25T2R | Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR(WITH |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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EMH25T2R | Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR(WITH |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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EMH53T2R | Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR(WITHPart Status: Active Supplier Device Package: EMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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EMH53T2R | Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR(WITHPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: EMT6 Part Status: Active |
на замовлення 7923 шт: термін постачання 21-31 дні (днів) |
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EM6K33T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 50V 0.2A EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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EM6K33T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 50V 0.2A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 24440 шт: термін постачання 21-31 дні (днів) |
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LM393FVT-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-TSSOP-BPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-TSSOP-B Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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LM393FVT-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-TSSOP-BPart Status: Active Current - Output (Typ): 16mA @ 5V Current - Input Bias (Max): 0.05µA @ 1.4V Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Quiescent (Max): 1mA Supplier Device Package: 8-TSSOP-B Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Operating Temperature: -40°C ~ 85°C Type: Standard (General Purpose) Number of Elements: 2 Mounting Type: Surface Mount Output Type: Open-Collector Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 5055 шт: термін постачання 21-31 дні (днів) |
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LM393FVM-TR | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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LM393FVM-TR | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 4068 шт: термін постачання 21-31 дні (днів) |
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RFUH20TB4SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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RFN20TB4SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A TO220NFMCurrent - Reverse Leakage @ Vr: 10 µA @ 430 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 430 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-220NFM Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 30 ns Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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BD70H31G-CTR | Rohm Semiconductor |
Description: SUPERVISORY VOLTAGE DETECTOR RESDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 3.06V Reset Timeout: 20µs Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active High Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD70H31G-CTR | Rohm Semiconductor |
Description: SUPERVISORY VOLTAGE DETECTOR RESDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 5-SSOP Voltage - Threshold: 3.06V Reset Timeout: 20µs Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active High Type: Voltage Detector Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
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R6504KNXC7G | Rohm Semiconductor |
Description: 650V 4A TO-220FM, HIGH-SPEED SWIDrive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 130µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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R6504ENXC7G | Rohm Semiconductor |
Description: 650V 4A TO-220FM, LOW-NOISE POWEInput Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 4V @ 130µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 988 шт: термін постачання 21-31 дні (днів) |
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RD3U080CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A TO252Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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RD3U080CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A TO252Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1781 шт: термін постачання 21-31 дні (днів) |
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RD3L150SNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 15A TO252Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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RD3L150SNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 15A TO252Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 24538 шт: термін постачання 21-31 дні (днів) |
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SML-H12P8TT86C | Rohm Semiconductor |
Description: LED GREEN CLEAR 2012 SMDPackaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 560nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm Grade: Automotive Qualification: AEC-Q101 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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SML-H12P8TT86C | Rohm Semiconductor |
Description: LED GREEN CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 560nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm Grade: Automotive Qualification: AEC-Q101 |
на замовлення 38399 шт: термін постачання 21-31 дні (днів) |
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SMLMN2BCTT86C | Rohm Semiconductor |
Description: LED BLUE CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Blue Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 36mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Lens Color: Colorless Current - Test: 5mA Height (Max): 0.90mm Wavelength - Dominant: 470nm Supplier Device Package: 2012(0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.40mm x 0.85mm Grade: Automotive Qualification: AEC-Q102 |
на замовлення 4233 шт: термін постачання 21-31 дні (днів) |
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LM2901F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4CH 14-SOPOutput Type: Open-Collector Package / Case: 14-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Part Status: Active Current - Output (Typ): 16mA @ 5V Current - Input Bias (Max): 0.05µA @ 1.4V Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Quiescent (Max): 2mA Supplier Device Package: 14-SOP Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Operating Temperature: -40°C ~ 125°C Type: Standard (General Purpose) Number of Elements: 4 Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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LM2901F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4CH 14-SOPPart Status: Active Current - Output (Typ): 16mA @ 5V Current - Input Bias (Max): 0.05µA @ 1.4V Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Quiescent (Max): 2mA Supplier Device Package: 14-SOP Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Operating Temperature: -40°C ~ 125°C Type: Standard (General Purpose) Number of Elements: 4 Mounting Type: Surface Mount Output Type: Open-Collector Package / Case: 14-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2439 шт: термін постачання 21-31 дні (днів) |
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R6002ENHTB1 | Rohm Semiconductor |
Description: 600V 1.7A SOP8, LOW-NOISE POWERPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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R6002ENHTB1 | Rohm Semiconductor |
Description: 600V 1.7A SOP8, LOW-NOISE POWERPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
на замовлення 1499 шт: термін постачання 21-31 дні (днів) |
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| ML620Q156-607TBZWARL | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA144WCAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| ML610Q174-480GAZWAX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BD91N01NUX-E2 | Rohm Semiconductor |
Description: USB TYPE-C SINK PORT DETECTION APackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 5.5V Applications: USB Type C Current - Supply: 125µA Supplier Device Package: VSON010X3020 Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BD91N01NUX-E2 | Rohm Semiconductor |
Description: USB TYPE-C SINK PORT DETECTION APackaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 5.5V Applications: USB Type C Current - Supply: 125µA Supplier Device Package: VSON010X3020 Part Status: Active |
на замовлення 4196 шт: термін постачання 21-31 дні (днів) |
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RFUH20TB3SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 350V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 10 nA @ 350 V |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
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RFN5TF6SC9 | Rohm Semiconductor |
Description: DIODE STANDARD 600V 5A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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RQ6E060ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 6A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 693 шт: термін постачання 21-31 дні (днів) |
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RQ6G050ATTCR | Rohm Semiconductor |
Description: PCH -30V -5A POWER MOSFET - RQ6GInput Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: TSMT6 (SC-95) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RQ6G050ATTCR | Rohm Semiconductor |
Description: PCH -30V -5A POWER MOSFET - RQ6GInput Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 16657 шт: термін постачання 21-31 дні (днів) |
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UT6JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ6E030ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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RAQ045P01TCR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 7336 шт: термін постачання 21-31 дні (днів) |
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RF4L070BGTCR | Rohm Semiconductor |
Description: NCH 60V 7A, HUML2020L8, POWER MOInput Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4L070BGTCR | Rohm Semiconductor |
Description: NCH 60V 7A, HUML2020L8, POWER MOInput Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 2109 шт: термін постачання 21-31 дні (днів) |
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RF4G100BGTCR | Rohm Semiconductor |
Description: NCH 40V 10A, HUML2020L8, POWER MInput Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4G100BGTCR | Rohm Semiconductor |
Description: NCH 40V 10A, HUML2020L8, POWER MPart Status: Active Supplier Device Package: DFN2020-8S Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 1430 шт: термін постачання 21-31 дні (днів) |
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RQ7G080BGTCR | Rohm Semiconductor |
Description: NCH 40V 8A, TSMT8, POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RQ7G080BGTCR | Rohm Semiconductor |
Description: NCH 40V 8A, TSMT8, POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 3100 шт: термін постачання 21-31 дні (днів) |
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| BS2100F-E2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Part Status: Last Time Buy Current - Peak Output (Source, Sink): 60mA, 130mA Logic Voltage - VIL, VIH: 1V, 2.6V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 200ns, 100ns Supplier Device Package: 8-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML610Q178-022GAZ0AAL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML610Q178-022GAZ0AX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SFR01MZPJ332 | Rohm Semiconductor |
Description: RES 3.3K OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 3.3 kOhms |
на замовлення 48714 шт: термін постачання 21-31 дні (днів) |
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BM2P134Q-Z | Rohm Semiconductor |
Description: IC OFFLINE SW FULL-BRIDGE 7DIP |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BM2P121X-Z | Rohm Semiconductor |
Description: IC REG BUCK 850A 7DIPKTopology: Buck Voltage - Input (Max): 12.96V Frequency - Switching: 65kHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 850µA Number of Outputs: 1 Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube Voltage - Input (Min): 9.5V Synchronous Rectifier: No Supplier Device Package: 7-DIPK |
на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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BM2SC124FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Part Status: Active Control Features: EN, Frequency Control, Soft Start Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-263-7 Output Isolation: Isolated Voltage - Breakdown: 1700V Internal Switch(s): Yes Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BM2SC124FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Part Status: Active Control Features: EN, Frequency Control, Soft Start Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 1700V Internal Switch(s): Yes Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Supplier Device Package: TO-263-7 Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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| BA30DD0WT |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3V 2A TO220FP-5
Description: IC REG LINEAR 3V 2A TO220FP-5
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.70 грн |
| 10+ | 242.51 грн |
| 25+ | 229.22 грн |
| 100+ | 186.44 грн |
| 250+ | 176.88 грн |
| BD00FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BD00FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
Description: 2A VARIABLE OUTPUT, HIGH-ACCURAC
на замовлення 1467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.33 грн |
| 10+ | 181.19 грн |
| 25+ | 170.98 грн |
| 100+ | 136.69 грн |
| 250+ | 128.35 грн |
| 500+ | 112.31 грн |
| 1000+ | 91.53 грн |
| EMX51T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| EMX51T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
на замовлення 7985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 17+ | 18.78 грн |
| 100+ | 9.47 грн |
| 500+ | 7.25 грн |
| 1000+ | 5.38 грн |
| 2000+ | 4.53 грн |
| EMH25T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| EMH25T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 12+ | 25.66 грн |
| 100+ | 14.52 грн |
| EMH53T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| EMH53T2R |
![]() |
Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 7923 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.37 грн |
| 21+ | 14.66 грн |
| 100+ | 9.20 грн |
| 500+ | 6.39 грн |
| 1000+ | 5.67 грн |
| 2000+ | 5.05 грн |
| EM6K33T2R |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.41 грн |
| EM6K33T2R |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 24440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.78 грн |
| 11+ | 27.79 грн |
| 50+ | 20.23 грн |
| 100+ | 16.69 грн |
| 500+ | 12.63 грн |
| LM393FVT-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| LM393FVT-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-TSSOP-B
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-TSSOP-B
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2CH 8-TSSOP-B
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-TSSOP-B
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 5055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.09 грн |
| 10+ | 39.25 грн |
| 25+ | 35.28 грн |
| 100+ | 29.05 грн |
| 250+ | 27.12 грн |
| 500+ | 25.95 грн |
| 1000+ | 25.50 грн |
| LM393FVM-TR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.39 грн |
| LM393FVM-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 4068 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.23 грн |
| 11+ | 28.02 грн |
| 25+ | 25.11 грн |
| 100+ | 20.53 грн |
| 250+ | 19.09 грн |
| 500+ | 18.22 грн |
| 1000+ | 17.22 грн |
| RFUH20TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.92 грн |
| 10+ | 116.60 грн |
| 50+ | 88.82 грн |
| 100+ | 74.94 грн |
| 500+ | 60.19 грн |
| RFN20TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220NFM
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE STANDARD 430V 20A TO220NFM
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 430 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220NFM
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.86 грн |
| 50+ | 91.93 грн |
| BD70H31G-CTR |
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Виробник: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD70H31G-CTR |
![]() |
Виробник: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: SUPERVISORY VOLTAGE DETECTOR RES
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Threshold: 3.06V
Reset Timeout: 20µs Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active High
Type: Voltage Detector
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 37.95 грн |
| 25+ | 34.15 грн |
| 100+ | 28.10 грн |
| 250+ | 26.22 грн |
| 500+ | 25.08 грн |
| 1000+ | 23.75 грн |
| R6504KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.16 грн |
| 10+ | 143.24 грн |
| 50+ | 109.94 грн |
| 100+ | 93.09 грн |
| 500+ | 75.40 грн |
| R6504ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.45 грн |
| 50+ | 70.75 грн |
| 100+ | 68.39 грн |
| 500+ | 63.19 грн |
| RD3U080CNTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RD3U080CNTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V 8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1781 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.21 грн |
| 10+ | 135.30 грн |
| 100+ | 108.78 грн |
| 500+ | 83.87 грн |
| 1000+ | 69.50 грн |
| RD3L150SNTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.04 грн |
| 5000+ | 33.05 грн |
| 12500+ | 31.52 грн |
| RD3L150SNTL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 15A TO252
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 24538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 68.64 грн |
| 100+ | 53.39 грн |
| 500+ | 42.47 грн |
| 1000+ | 34.59 грн |
| SML-H12P8TT86C |
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Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.72 грн |
| 6000+ | 6.06 грн |
| 9000+ | 5.85 грн |
| 15000+ | 5.27 грн |
| 21000+ | 5.14 грн |
| 30000+ | 5.01 грн |
| SML-H12P8TT86C |
![]() |
Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.62 грн |
| 23+ | 13.82 грн |
| 100+ | 9.74 грн |
| 500+ | 7.39 грн |
| 1000+ | 6.81 грн |
| SMLMN2BCTT86C |
![]() |
Виробник: Rohm Semiconductor
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Grade: Automotive
Qualification: AEC-Q102
на замовлення 4233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 14+ | 21.99 грн |
| 100+ | 15.73 грн |
| 500+ | 12.12 грн |
| 1000+ | 11.25 грн |
| LM2901F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Description: IC COMPARATOR 4CH 14-SOP
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| LM2901F-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 4CH 14-SOP
Part Status: Active
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.05µA @ 1.4V
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Quiescent (Max): 2mA
Supplier Device Package: 14-SOP
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: Standard (General Purpose)
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2439 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.26 грн |
| 10+ | 57.80 грн |
| 25+ | 52.26 грн |
| 100+ | 43.33 грн |
| 250+ | 40.61 грн |
| 500+ | 38.97 грн |
| 1000+ | 37.53 грн |
| R6002ENHTB1 |
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Виробник: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6002ENHTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
на замовлення 1499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.45 грн |
| 10+ | 78.49 грн |
| 50+ | 58.93 грн |
| 100+ | 49.36 грн |
| 500+ | 38.96 грн |
| ML620Q156-607TBZWARL |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| DTA144WCAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ML610Q174-480GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| BD91N01NUX-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 53.53 грн |
| BD91N01NUX-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
на замовлення 4196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 77.04 грн |
| 25+ | 69.97 грн |
| 100+ | 58.33 грн |
| 250+ | 54.83 грн |
| 500+ | 52.72 грн |
| 1000+ | 51.39 грн |
| RFUH20TB3SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.13 грн |
| 10+ | 116.14 грн |
| 50+ | 88.45 грн |
| 100+ | 74.63 грн |
| 500+ | 59.93 грн |
| RFN5TF6SC9 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.96 грн |
| 10+ | 113.85 грн |
| 50+ | 86.68 грн |
| 100+ | 73.11 грн |
| RQ6E060ATTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET P-CH 30V 6A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 693 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 52.30 грн |
| 100+ | 34.38 грн |
| 500+ | 25.03 грн |
| RQ6G050ATTCR |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.09 грн |
| 6000+ | 22.40 грн |
| 9000+ | 21.50 грн |
| RQ6G050ATTCR |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: PCH -30V -5A POWER MOSFET - RQ6G
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 16657 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.60 грн |
| 10+ | 59.02 грн |
| 100+ | 39.02 грн |
| 500+ | 28.56 грн |
| 1000+ | 25.97 грн |
| UT6JB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6JB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RQ6E030ATTCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 3A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 35.96 грн |
| 100+ | 23.25 грн |
| 500+ | 16.66 грн |
| RAQ045P01TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 7336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.13 грн |
| 10+ | 31.99 грн |
| 100+ | 20.60 грн |
| 500+ | 14.72 грн |
| 1000+ | 13.23 грн |
| RF4L070BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4L070BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Description: NCH 60V 7A, HUML2020L8, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 2109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 61.85 грн |
| 100+ | 40.95 грн |
| 500+ | 30.02 грн |
| 1000+ | 27.31 грн |
| RF4G100BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: NCH 40V 10A, HUML2020L8, POWER M
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4G100BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: NCH 40V 10A, HUML2020L8, POWER M
Part Status: Active
Supplier Device Package: DFN2020-8S
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 1430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 61.85 грн |
| 100+ | 40.95 грн |
| 500+ | 30.02 грн |
| 1000+ | 27.31 грн |
| RQ7G080BGTCR |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RQ7G080BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.50 грн |
| 10+ | 51.01 грн |
| 100+ | 38.65 грн |
| 500+ | 31.60 грн |
| BS2100F-E2 |
Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 1V, 2.6V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| ML610Q178-022GAZ0AAL |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML610Q178-022GAZ0AX |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| SFR01MZPJ332 |
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Виробник: Rohm Semiconductor
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
на замовлення 48714 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.52 грн |
| 73+ | 4.20 грн |
| 112+ | 2.75 грн |
| 132+ | 2.19 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.34 грн |
| 5000+ | 0.99 грн |
| BM2P134Q-Z |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| BM2P121X-Z |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
Description: IC REG BUCK 850A 7DIPK
Topology: Buck
Voltage - Input (Max): 12.96V
Frequency - Switching: 65kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 850µA
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Voltage - Input (Min): 9.5V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
на замовлення 951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.68 грн |
| 10+ | 138.43 грн |
| 50+ | 119.53 грн |
| 100+ | 106.68 грн |
| 250+ | 100.89 грн |
| 500+ | 97.40 грн |
| BM2SC124FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BM2SC124FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1064.90 грн |
| 10+ | 711.72 грн |
| 25+ | 629.82 грн |


























