Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105089) > Сторінка 872 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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ESR25JZPF1000 | Rohm Semiconductor |
Description: RES 100 OHM 1% 1W 1210Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1210 (3225 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1210 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 Ohms |
на замовлення 54713 шт: термін постачання 21-31 дні (днів) |
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R6020ENXC7G | Rohm Semiconductor |
Description: 600V 20A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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R6004ENXC7G | Rohm Semiconductor |
Description: 600V 4A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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R6009ENXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6015KNXC7G | Rohm Semiconductor |
Description: 600V 15A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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R6015ENXC7G | Rohm Semiconductor |
Description: 600V 15A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6009KNXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 551 шт: термін постачання 21-31 дні (днів) |
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R6024KNXC7G | Rohm Semiconductor |
Description: 600V 24A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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R6030KNXC7G | Rohm Semiconductor |
Description: 600V 30A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V |
на замовлення 827 шт: термін постачання 21-31 дні (днів) |
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R6006KNXC7G | Rohm Semiconductor |
Description: 600V 6A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 762 шт: термін постачання 21-31 дні (днів) |
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R6006JNXC7G | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO220FMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 7V @ 800µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V |
на замовлення 752 шт: термін постачання 21-31 дні (днів) |
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R6007ENXC7G | Rohm Semiconductor |
Description: 600V 7A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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R6007KNXC7G | Rohm Semiconductor |
Description: 600V 7A TO-220FM, HIGH-SPEED SWIInput Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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R6008ANX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A TO-220FM |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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R6008FNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A TO-220FM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6004KNJTL | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 4A TO263 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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R6008FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 8A LPTS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6007KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FM |
на замовлення 442 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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R6007KNX | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO220FM |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
| BD7997FS-E2 | Rohm Semiconductor | Description: IC POWER MANAGEMENT SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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UDZLVFHTE-1751 | Rohm Semiconductor |
Description: DIODE ZENER 51V 200MW UMD2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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UDZLVFHTE-1751 | Rohm Semiconductor |
Description: DIODE ZENER 51V 200MW UMD2 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPJ120 | Rohm Semiconductor |
Description: RES SMD 12 OHM 5% 0.3W 0603Resistance: 12 Ohms Part Status: Active Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0603 (1608 Metric) Features: Pulse Withstanding Tolerance: ±5% Power (Watts): 0.3W Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPJ120 | Rohm Semiconductor |
Description: RES SMD 12 OHM 5% 0.3W 0603Resistance: 12 Ohms Part Status: Active Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0603 (1608 Metric) Features: Pulse Withstanding Tolerance: ±5% Power (Watts): 0.3W Packaging: Cut Tape (CT) |
на замовлення 3393 шт: термін постачання 21-31 дні (днів) |
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BD41044FJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER HALF 1/1 8SOPJQualification: AEC-Q100 Grade: Automotive Part Status: Active Duplex: Half Receiver Hysteresis: 300 mV Supplier Device Package: 8-SOP-J Protocol: CANbus Data Rate: 5Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 125°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD41044FJ-CE2 | Rohm Semiconductor |
Description: IC TRANSCEIVER HALF 1/1 8SOPJQualification: AEC-Q100 Grade: Automotive Part Status: Active Duplex: Half Receiver Hysteresis: 300 mV Supplier Device Package: 8-SOP-J Protocol: CANbus Data Rate: 5Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 125°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 1284 шт: термін постачання 21-31 дні (днів) |
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BA033ST | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 1A TO220FP-5 Current - Supply (Max): 5 mA Protection Features: Over Current, Over Temperature, Over Voltage PSRR: 55dB (120Hz) Part Status: Not For New Designs Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-220FP-5 Number of Regulators: 1 Voltage - Input (Max): 25V Current - Quiescent (Iq): 2.5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-5 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C27VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Tolerance: ±7.04% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 19 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84C27VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Current - Reverse Leakage @ Vr: 100 nA @ 19 V Power - Max: 250 mW Part Status: Active Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±7.04% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1747 шт: термін постачання 21-31 дні (днів) |
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BZX84C27VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Current - Reverse Leakage @ Vr: 100 nA @ 19 V Power - Max: 250 mW Part Status: Active Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±7.04% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84C27VLYT116 | Rohm Semiconductor |
Description: DIODE ZENER 27V 250MW SOT23Power - Max: 250 mW Part Status: Active Supplier Device Package: SOT-23 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±7.04% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 19 V |
на замовлення 2570 шт: термін постачання 21-31 дні (днів) |
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RQ6A045APTCR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V |
на замовлення 2733 шт: термін постачання 21-31 дні (днів) |
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RQ7E110AJTCR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 10mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
на замовлення 341 шт: термін постачання 21-31 дні (днів) |
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BM531Q11-Z | Rohm Semiconductor |
Description: IC LED DRIVER RGLTR PWM 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Number of Outputs: 1 Frequency: 400kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 105°C Applications: Backlight Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: 7-DIP Dimming: Analog, PWM Voltage - Supply (Min): 9V Voltage - Supply (Max): 35V Part Status: Active |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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QST2TR | Rohm Semiconductor |
Description: TRANS PNP 12V 6A TSMT6Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QST2TR | Rohm Semiconductor |
Description: TRANS PNP 12V 6A TSMT6Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD9S300MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 16VQFNPart Status: Active Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 2.7V Voltage - Output (Max): 4.4V Synchronous Rectifier: Yes Supplier Device Package: VQFN016V3030 Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2.2MHz Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 3A Function: Step-Down |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD9S300MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 16VQFNVoltage - Input (Max): 5.5V Frequency - Switching: 2.2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 2.7V Qualification: AEC-Q100 Grade: Automotive Voltage - Output (Max): 4.4V Synchronous Rectifier: Yes Supplier Device Package: VQFN016V3030 Topology: Buck |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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BD9P205MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2A VQFN20FV4040Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: VQFN20FV4040 Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD9P205MUF-CE2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2A VQFN20FV4040Packaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: VQFN20FV4040 Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2288 шт: термін постачання 21-31 дні (днів) |
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2SCR587D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 120V 3A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 10 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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2SCR587D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 120V 3A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 10 W |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
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2SCR583D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 50V 7A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 10 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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2SCR583D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 50V 7A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 10 W |
на замовлення 2621 шт: термін постачання 21-31 дні (днів) |
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BA17806FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 6V 1A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 21V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 73dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BA17806FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 6V 1A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 21V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 73dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
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R6504KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, NCH 650V 4Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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R6504KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING, NCH 650V 4Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 1560 шт: термін постачання 21-31 дні (днів) |
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BSM250D17P2E004 | Rohm Semiconductor |
Description: MOSFET 2N-CH 1700V 250A MODULEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1800W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Vgs(th) (Max) @ Id: 4V @ 66mA Supplier Device Package: Module Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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BSM180D12P2E002 | Rohm Semiconductor |
Description: 1200V, 204A, HALF BRIDGE, SILICO Power - Max: 1360W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 4V @ 35.2mA Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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RFN2LAM6STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1.5A PMDTMQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RFN2LAM6STFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 1.5A PMDTMQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDTM Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
на замовлення 1420 шт: термін постачання 21-31 дні (днів) |
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RF071L4STFTE25 | Rohm Semiconductor |
Description: FAST RECOVERY DIODE (AEC-Q101 QU |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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RF071L4STFTE25 | Rohm Semiconductor |
Description: FAST RECOVERY DIODE (AEC-Q101 QU |
на замовлення 381 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RF05VYM2SFHTR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 500MA TUMD2MPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RF05VYM2SFHTR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 500MA TUMD2MPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 15054 шт: термін постачання 21-31 дні (днів) |
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BD9P105EFV-CE2 | Rohm Semiconductor |
Description: NANO PULSE CONTROL, 3.5V TO 40VPackaging: Tape & Reel (TR) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: 20-HTSSOP-B Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD9P105EFV-CE2 | Rohm Semiconductor |
Description: NANO PULSE CONTROL, 3.5V TO 40VPackaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: 20-HTSSOP-B Synchronous Rectifier: Yes Voltage - Output (Max): 8.5V Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD9P155EFV-CE2 | Rohm Semiconductor |
Description: IC REG BUCK 5V 1A 20HTSSOP-BPackaging: Tape & Reel (TR) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: 20-HTSSOP-B Synchronous Rectifier: Yes Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BD9P155EFV-CE2 | Rohm Semiconductor |
Description: IC REG BUCK 5V 1A 20HTSSOP-BPackaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: 20-HTSSOP-B Synchronous Rectifier: Yes Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 11005 шт: термін постачання 21-31 дні (днів) |
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| ESR25JZPF1000 |
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Виробник: Rohm Semiconductor
Description: RES 100 OHM 1% 1W 1210
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
Description: RES 100 OHM 1% 1W 1210
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 Ohms
на замовлення 54713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 24+ | 12.69 грн |
| 29+ | 10.36 грн |
| 50+ | 8.47 грн |
| 100+ | 7.48 грн |
| 250+ | 6.48 грн |
| 500+ | 5.81 грн |
| 1000+ | 5.36 грн |
| R6020ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.90 грн |
| 50+ | 134.79 грн |
| 100+ | 134.16 грн |
| 500+ | 72.79 грн |
| R6004ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: 600V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
на замовлення 815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.26 грн |
| 50+ | 67.17 грн |
| 100+ | 66.24 грн |
| 500+ | 60.06 грн |
| R6009ENXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Description: 600V 9A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.10 грн |
| 50+ | 113.04 грн |
| 100+ | 109.52 грн |
| 500+ | 91.39 грн |
| 1000+ | 84.83 грн |
| R6015KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: 600V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.58 грн |
| 50+ | 81.95 грн |
| 100+ | 73.70 грн |
| 500+ | 55.56 грн |
| R6015ENXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: 600V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.12 грн |
| 50+ | 143.88 грн |
| 100+ | 136.34 грн |
| 500+ | 105.48 грн |
| 1000+ | 98.27 грн |
| R6009KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: 600V 9A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.83 грн |
| 10+ | 158.87 грн |
| 100+ | 128.53 грн |
| 500+ | 107.22 грн |
| R6024KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: 600V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 409.93 грн |
| 50+ | 208.39 грн |
| 100+ | 190.42 грн |
| 500+ | 177.91 грн |
| R6030KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Description: 600V 30A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.37 грн |
| 50+ | 127.21 грн |
| 100+ | 115.27 грн |
| 500+ | 88.54 грн |
| R6006KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: 600V 6A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 762 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.67 грн |
| 50+ | 114.81 грн |
| 100+ | 103.70 грн |
| 500+ | 79.04 грн |
| R6006JNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 7V @ 800µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.80 грн |
| 50+ | 113.98 грн |
| 100+ | 103.05 грн |
| 500+ | 84.29 грн |
| R6007ENXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: 600V 7A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.65 грн |
| 50+ | 101.44 грн |
| 100+ | 97.59 грн |
| 500+ | 77.53 грн |
| 1000+ | 71.76 грн |
| R6007KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 600V 7A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.73 грн |
| 50+ | 73.29 грн |
| 100+ | 70.93 грн |
| 500+ | 35.10 грн |
| R6008ANX |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| R6008FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
товару немає в наявності
В кошику
од. на суму грн.
| R6004KNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 4A TO263
Description: MOSFET N-CHANNEL 600V 4A TO263
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6008FNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
Description: MOSFET N-CH 600V 8A LPTS
товару немає в наявності
В кошику
од. на суму грн.
| R6007KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
на замовлення 442 шт:
термін постачання 21-31 дні (днів)
| R6007KNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO220FM
Description: MOSFET N-CH 600V 7A TO220FM
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BD7997FS-E2 |
Виробник: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Description: IC POWER MANAGEMENT SMD
товару немає в наявності
В кошику
од. на суму грн.
| UDZLVFHTE-1751 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
Description: DIODE ZENER 51V 200MW UMD2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UDZLVFHTE-1751 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 51V 200MW UMD2
Description: DIODE ZENER 51V 200MW UMD2
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| SDR03EZPJ120 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SDR03EZPJ120 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
Description: RES SMD 12 OHM 5% 0.3W 0603
Resistance: 12 Ohms
Part Status: Active
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.3W
Packaging: Cut Tape (CT)
на замовлення 3393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.30 грн |
| 73+ | 4.10 грн |
| 112+ | 2.69 грн |
| 131+ | 2.14 грн |
| 500+ | 1.51 грн |
| 1000+ | 1.31 грн |
| BD41044FJ-CE2 |
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Виробник: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD41044FJ-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER HALF 1/1 8SOPJ
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Duplex: Half
Receiver Hysteresis: 300 mV
Supplier Device Package: 8-SOP-J
Protocol: CANbus
Data Rate: 5Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 1284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.38 грн |
| 10+ | 118.20 грн |
| 25+ | 111.48 грн |
| 100+ | 89.15 грн |
| 250+ | 83.71 грн |
| 500+ | 73.25 грн |
| 1000+ | 59.69 грн |
| BA033ST |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 1A TO220FP-5
Current - Supply (Max): 5 mA
Protection Features: Over Current, Over Temperature, Over Voltage
PSRR: 55dB (120Hz)
Part Status: Not For New Designs
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220FP-5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack
Packaging: Tube
Description: IC REG LINEAR 3.3V 1A TO220FP-5
Current - Supply (Max): 5 mA
Protection Features: Over Current, Over Temperature, Over Voltage
PSRR: 55dB (120Hz)
Part Status: Not For New Designs
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220FP-5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 2.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C27VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 250MW SOT23
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84C27VLYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1747 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 20+ | 14.92 грн |
| 100+ | 9.35 грн |
| 500+ | 6.50 грн |
| 1000+ | 5.76 грн |
| BZX84C27VLYT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 27V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX84C27VLYT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 250MW SOT23
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
Description: DIODE ZENER 27V 250MW SOT23
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±7.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 19 V
на замовлення 2570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 23+ | 13.06 грн |
| 100+ | 8.17 грн |
| 500+ | 5.66 грн |
| 1000+ | 5.01 грн |
| RQ6A045APTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
на замовлення 2733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.61 грн |
| 100+ | 24.48 грн |
| 500+ | 17.67 грн |
| 1000+ | 15.96 грн |
| RQ7E110AJTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
на замовлення 341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.41 грн |
| 10+ | 59.77 грн |
| 100+ | 39.77 грн |
| BM531Q11-Z |
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Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
Description: IC LED DRIVER RGLTR PWM 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 400kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C
Applications: Backlight
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-DIP
Dimming: Analog, PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 35V
Part Status: Active
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| 10+ | 111.48 грн |
| 100+ | 76.48 грн |
| QST2TR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.04 грн |
| QST2TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 6A TSMT6
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.82 грн |
| 10+ | 40.59 грн |
| 100+ | 28.08 грн |
| 500+ | 22.02 грн |
| 1000+ | 18.74 грн |
| BD9S300MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
Description: IC REG BUCK ADJ 3A 16VQFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD9S300MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 16VQFN
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
Description: IC REG BUCK ADJ 3A 16VQFN
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 4.4V
Synchronous Rectifier: Yes
Supplier Device Package: VQFN016V3030
Topology: Buck
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.68 грн |
| 10+ | 179.46 грн |
| 25+ | 169.36 грн |
| 100+ | 135.41 грн |
| 250+ | 127.15 грн |
| 500+ | 111.26 грн |
| 1000+ | 90.67 грн |
| BD9P205MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD9P205MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2A VQFN20FV4040
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: VQFN20FV4040
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.95 грн |
| 10+ | 162.30 грн |
| 25+ | 148.88 грн |
| 100+ | 125.86 грн |
| 250+ | 119.24 грн |
| 500+ | 115.26 грн |
| 1000+ | 110.14 грн |
| 2SCR587D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
Description: TRANS NPN 120V 3A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SCR587D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
Description: TRANS NPN 120V 3A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 10 W
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 154.98 грн |
| 10+ | 95.59 грн |
| 100+ | 64.76 грн |
| 500+ | 48.38 грн |
| 1000+ | 44.39 грн |
| 2SCR583D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Description: TRANS NPN 50V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SCR583D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
Description: TRANS NPN 50V 7A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 10 W
на замовлення 2621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.76 грн |
| 10+ | 96.19 грн |
| 100+ | 65.17 грн |
| 500+ | 48.68 грн |
| 1000+ | 44.67 грн |
| BA17806FP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 6V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BA17806FP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 6V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 21V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 73dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
на замовлення 974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.78 грн |
| 10+ | 88.95 грн |
| 25+ | 74.83 грн |
| 100+ | 55.24 грн |
| 250+ | 47.88 грн |
| 500+ | 43.34 грн |
| R6504KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6504KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: HIGH-SPEED SWITCHING, NCH 650V 4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.93 грн |
| 10+ | 84.77 грн |
| 100+ | 57.41 грн |
| 500+ | 42.88 грн |
| 1000+ | 40.71 грн |
| BSM250D17P2E004 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 65369.66 грн |
| BSM180D12P2E002 |
Виробник: Rohm Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 54641.06 грн |
| RFN2LAM6STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RFN2LAM6STFTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 1.5A PMDTM
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 10+ | 30.89 грн |
| 100+ | 21.10 грн |
| 500+ | 15.61 грн |
| 1000+ | 14.23 грн |
| RF071L4STFTE25 |
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Виробник: Rohm Semiconductor
Description: FAST RECOVERY DIODE (AEC-Q101 QU
Description: FAST RECOVERY DIODE (AEC-Q101 QU
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| RF071L4STFTE25 |
![]() |
Виробник: Rohm Semiconductor
Description: FAST RECOVERY DIODE (AEC-Q101 QU
Description: FAST RECOVERY DIODE (AEC-Q101 QU
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
| RF05VYM2SFHTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.17 грн |
| 6000+ | 4.76 грн |
| RF05VYM2SFHTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA TUMD2M
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 15054 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 16+ | 19.40 грн |
| 100+ | 9.78 грн |
| 500+ | 7.49 грн |
| 1000+ | 5.55 грн |
| BD9P105EFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 121.34 грн |
| BD9P105EFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: NANO PULSE CONTROL, 3.5V TO 40V
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Output (Max): 8.5V
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.77 грн |
| 10+ | 209.09 грн |
| 25+ | 197.66 грн |
| 100+ | 160.76 грн |
| 250+ | 152.52 грн |
| 500+ | 136.86 грн |
| 1000+ | 113.53 грн |
| BD9P155EFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 104.64 грн |
| 5000+ | 98.77 грн |
| BD9P155EFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK 5V 1A 20HTSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: 20-HTSSOP-B
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 11005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.38 грн |
| 10+ | 142.45 грн |
| 25+ | 130.44 грн |
| 100+ | 110.04 грн |
| 250+ | 104.14 грн |
| 500+ | 100.58 грн |
| 1000+ | 96.05 грн |
























