Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 878 з 1704
| Фото | Назва | Виробник | Інформація |
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RPMD-0132 | Rohm Semiconductor |
Description: SENSOR PHOTODIODE 940NM 3SMDPackaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Wavelength: 940nm Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Current - Dark (Typ): 1nA Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 15 V |
на замовлення 1556 шт: термін постачання 21-31 дні (днів) |
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RQ6E030SPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ6E030SPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
на замовлення 3083 шт: термін постачання 21-31 дні (днів) |
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RQ5E030RPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ5E030RPTL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 1903 шт: термін постачання 21-31 дні (днів) |
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BA78M10CP-E2 | Rohm Semiconductor |
Description: IC REG LIN 10V 500MA TO220CP-3Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: TO-220CP-3 Voltage - Output (Min/Fixed): 10V Part Status: Obsolete PSRR: 66dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QS8M31TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 3A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QS8M31TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 60V 3A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 1999 шт: термін постачання 21-31 дні (днів) |
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RFNL5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFNL5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1675 шт: термін постачання 21-31 дні (днів) |
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RFN3BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN3BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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RFV5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFV5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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RFUH25NS3STL | Rohm Semiconductor |
Description: FAST RECOVERY DIODES. ROHM'S FAS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFUH25NS3STL | Rohm Semiconductor |
Description: FAST RECOVERY DIODES. ROHM'S FAS |
на замовлення 502 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RFV5BM6STL | Rohm Semiconductor |
Description: RFV5BM6S IS SUPER FAST RECOVERY |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFV5BM6STL | Rohm Semiconductor |
Description: RFV5BM6S IS SUPER FAST RECOVERY |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| RR601BGE4STL | Rohm Semiconductor | Description: RECTIFIER DIODE : RR601BGE4S IS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RR601BGE4STL | Rohm Semiconductor | Description: RECTIFIER DIODE : RR601BGE4S IS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RFV8BM6STL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFV8BM6STL | Rohm Semiconductor |
Description: SCHOTTKY BARRIER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN5BGE3STL | Rohm Semiconductor |
Description: DIODE GEN PURP 350V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN5BGE3STL | Rohm Semiconductor |
Description: DIODE GEN PURP 350V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
на замовлення 1686 шт: термін постачання 21-31 дні (днів) |
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RFV8BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 8A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFV8BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 8A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFN5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN5BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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RFNL10BGE6STL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFNL10BGE6STL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2265 шт: термін постачання 21-31 дні (днів) |
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RF305BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF305BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2341 шт: термін постачання 21-31 дні (днів) |
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RFN10BGE6STL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN10BGE6STL | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1912 шт: термін постачання 21-31 дні (днів) |
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RF501BGE2STL | Rohm Semiconductor |
Description: DIODE STANDARD 200V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF501BGE2STL | Rohm Semiconductor |
Description: DIODE STANDARD 200V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 2174 шт: термін постачання 21-31 дні (днів) |
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RFN5BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN5BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2149 шт: термін постачання 21-31 дні (днів) |
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RF505BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RF505BGE6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2461 шт: термін постачання 21-31 дні (днів) |
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RFN3BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN3BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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RB075BGE40STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB075BGE40STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 2444 шт: термін постачання 21-31 дні (днів) |
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RB078BGE30STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252GEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RB078BGE30STL | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 5A TO252GEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD33C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 1A TO252-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BD33C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR 3.3V 1A TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2397 шт: термін постачання 21-31 дні (днів) |
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BD00C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR POS ADJ 1A TO252-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Max): 15V Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD00C0AWFP-CE2 | Rohm Semiconductor |
Description: IC REG LINEAR POS ADJ 1A TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 2.5 mA Voltage - Input (Max): 26.5V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Max): 15V Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.5V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 2.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1670 шт: термін постачання 21-31 дні (днів) |
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BA60BC0WFP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 6V 1A TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 0.5 mA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: TO-252-5 Voltage - Output (Min/Fixed): 6V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 900 µA |
на замовлення 1893 шт: термін постачання 21-31 дні (днів) |
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BD63015EFV-E2 | Rohm Semiconductor |
Description: BD63015EFV IS A THREE PHASE SINUPackaging: Tape & Reel (TR) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1.5A Interface: Logic Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 8V ~ 28V Supplier Device Package: 20-HTSSOP-B Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD63015EFV-E2 | Rohm Semiconductor |
Description: BD63015EFV IS A THREE PHASE SINUPackaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 1.5A Interface: Logic Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 8V ~ 28V Supplier Device Package: 20-HTSSOP-B Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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RGCL60TS60DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 598 шт: термін постачання 21-31 дні (днів) |
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RGCL60TS60GC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 600V 48A TO-247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/186ns Switching Energy: 770µJ (on), 1.11mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 111 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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TCSOM0J226M8R | Rohm Semiconductor |
Description: CAP TANT POLY 22UF 6.3V 0603 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCTOA0J107M8R-ZS1 | Rohm Semiconductor |
Description: CAP TANT POLY 100UF 6.3V 1206 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCTOA0J107M8R-ZS1 | Rohm Semiconductor |
Description: CAP TANT POLY 100UF 6.3V 1206 |
на замовлення 1249 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B9V1LYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 9.1V 250MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±1.98% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B9V1LYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 9.1V 250MW SOT23Packaging: Cut Tape (CT) Tolerance: ±1.98% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2977 шт: термін постачання 21-31 дні (днів) |
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| RPMD-0132 |
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Виробник: Rohm Semiconductor
Description: SENSOR PHOTODIODE 940NM 3SMD
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Wavelength: 940nm
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Current - Dark (Typ): 1nA
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 15 V
Description: SENSOR PHOTODIODE 940NM 3SMD
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Wavelength: 940nm
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Current - Dark (Typ): 1nA
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 15 V
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 480.35 грн |
| 10+ | 327.11 грн |
| 100+ | 267.91 грн |
| 500+ | 211.95 грн |
| 1000+ | 194.41 грн |
| RQ6E030SPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.24 грн |
| RQ6E030SPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
на замовлення 3083 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.74 грн |
| 10+ | 45.04 грн |
| 100+ | 29.31 грн |
| 500+ | 21.14 грн |
| 1000+ | 19.09 грн |
| RQ5E030RPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RQ5E030RPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.30 грн |
| 10+ | 36.96 грн |
| 100+ | 23.92 грн |
| 500+ | 17.19 грн |
| 1000+ | 15.49 грн |
| BA78M10CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 10V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Description: IC REG LIN 10V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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| QS8M31TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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В кошику
од. на суму грн.
| QS8M31TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 60V 3A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.18 грн |
| 10+ | 53.53 грн |
| 100+ | 35.26 грн |
| 500+ | 25.71 грн |
| 1000+ | 23.34 грн |
| RFNL5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFNL5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.22 грн |
| 10+ | 60.00 грн |
| 100+ | 41.57 грн |
| 500+ | 32.60 грн |
| 1000+ | 27.75 грн |
| RFN3BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN3BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.70 грн |
| 10+ | 58.79 грн |
| RFV5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFV5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.21 грн |
| 10+ | 90.01 грн |
| 100+ | 70.01 грн |
| 500+ | 55.69 грн |
| 1000+ | 45.36 грн |
| RFUH25NS3STL |
![]() |
Виробник: Rohm Semiconductor
Description: FAST RECOVERY DIODES. ROHM'S FAS
Description: FAST RECOVERY DIODES. ROHM'S FAS
товару немає в наявності
В кошику
од. на суму грн.
| RFUH25NS3STL |
![]() |
Виробник: Rohm Semiconductor
Description: FAST RECOVERY DIODES. ROHM'S FAS
Description: FAST RECOVERY DIODES. ROHM'S FAS
на замовлення 502 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RFV5BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: RFV5BM6S IS SUPER FAST RECOVERY
Description: RFV5BM6S IS SUPER FAST RECOVERY
товару немає в наявності
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од. на суму грн.
| RFV5BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: RFV5BM6S IS SUPER FAST RECOVERY
Description: RFV5BM6S IS SUPER FAST RECOVERY
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RR601BGE4STL |
Виробник: Rohm Semiconductor
Description: RECTIFIER DIODE : RR601BGE4S IS
Description: RECTIFIER DIODE : RR601BGE4S IS
товару немає в наявності
В кошику
од. на суму грн.
| RR601BGE4STL |
Виробник: Rohm Semiconductor
Description: RECTIFIER DIODE : RR601BGE4S IS
Description: RECTIFIER DIODE : RR601BGE4S IS
товару немає в наявності
В кошику
од. на суму грн.
| RFV8BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| RFV8BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE
Description: SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику
од. на суму грн.
| RFN5BGE3STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 350V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE GEN PURP 350V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN5BGE3STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 350V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE GEN PURP 350V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.66 грн |
| 10+ | 53.94 грн |
| 100+ | 37.33 грн |
| 500+ | 29.27 грн |
| 1000+ | 24.91 грн |
| RFV8BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 8A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 61.27 грн |
| RFV8BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 8A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.29 грн |
| 10+ | 107.31 грн |
| 100+ | 86.29 грн |
| 500+ | 66.54 грн |
| 1000+ | 55.37 грн |
| RFN5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN5BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.65 грн |
| 10+ | 84.34 грн |
| 100+ | 65.57 грн |
| 500+ | 52.16 грн |
| 1000+ | 42.49 грн |
| RFNL10BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFNL10BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.67 грн |
| 10+ | 120.90 грн |
| 100+ | 82.56 грн |
| 500+ | 62.07 грн |
| 1000+ | 57.12 грн |
| RF305BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RF305BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.09 грн |
| 10+ | 103.19 грн |
| 100+ | 80.46 грн |
| 500+ | 62.38 грн |
| 1000+ | 49.25 грн |
| RFN10BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN10BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.71 грн |
| 10+ | 110.71 грн |
| 100+ | 75.20 грн |
| 500+ | 56.32 грн |
| 1000+ | 51.74 грн |
| RF501BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| RF501BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 2174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.88 грн |
| 10+ | 83.70 грн |
| 100+ | 56.27 грн |
| 500+ | 41.79 грн |
| 1000+ | 38.49 грн |
| RFN5BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN5BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2149 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.25 грн |
| 10+ | 84.59 грн |
| 100+ | 65.95 грн |
| 500+ | 51.12 грн |
| 1000+ | 40.36 грн |
| RF505BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| RF505BGE6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2461 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.48 грн |
| 10+ | 104.64 грн |
| 100+ | 70.94 грн |
| 500+ | 53.01 грн |
| 1000+ | 48.65 грн |
| RFN3BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| RFN3BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.02 грн |
| 10+ | 76.58 грн |
| 100+ | 59.67 грн |
| 500+ | 46.26 грн |
| 1000+ | 36.52 грн |
| RB075BGE40STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| RB075BGE40STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 2444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.48 грн |
| 10+ | 104.64 грн |
| 100+ | 70.94 грн |
| 500+ | 53.01 грн |
| 1000+ | 48.65 грн |
| RB078BGE30STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 5A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 62.20 грн |
| RB078BGE30STL |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Description: DIODE SCHOTTKY 30V 5A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.59 грн |
| 10+ | 128.58 грн |
| 100+ | 88.50 грн |
| 500+ | 67.99 грн |
| BD33C0AWFP-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 1A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 1A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 53.07 грн |
| BD33C0AWFP-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.32 грн |
| 10+ | 105.77 грн |
| 25+ | 90.28 грн |
| 100+ | 68.31 грн |
| 250+ | 60.31 грн |
| 500+ | 55.41 грн |
| 1000+ | 50.50 грн |
| BD00C0AWFP-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 1A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BD00C0AWFP-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR POS ADJ 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 mA
Voltage - Input (Max): 26.5V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.5V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 2.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.93 грн |
| 10+ | 70.35 грн |
| 25+ | 63.76 грн |
| 100+ | 53.05 грн |
| 250+ | 49.81 грн |
| 500+ | 47.86 грн |
| 1000+ | 45.50 грн |
| BA60BC0WFP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 6V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.5 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 6V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 900 µA
Description: IC REG LINEAR 6V 1A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.5 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-252-5
Voltage - Output (Min/Fixed): 6V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 900 µA
на замовлення 1893 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.29 грн |
| 10+ | 106.50 грн |
| 25+ | 101.15 грн |
| 100+ | 77.96 грн |
| 250+ | 72.88 грн |
| 500+ | 64.40 грн |
| 1000+ | 50.01 грн |
| BD63015EFV-E2 |
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Виробник: Rohm Semiconductor
Description: BD63015EFV IS A THREE PHASE SINU
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1.5A
Interface: Logic
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BD63015EFV IS A THREE PHASE SINU
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1.5A
Interface: Logic
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
товару немає в наявності
В кошику
од. на суму грн.
| BD63015EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: BD63015EFV IS A THREE PHASE SINU
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1.5A
Interface: Logic
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Description: BD63015EFV IS A THREE PHASE SINU
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1.5A
Interface: Logic
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8V ~ 28V
Supplier Device Package: 20-HTSSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 441.72 грн |
| 10+ | 278.18 грн |
| RGCL60TS60DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 469.44 грн |
| 30+ | 258.40 грн |
| 120+ | 215.69 грн |
| 510+ | 173.04 грн |
| RGCL60TS60GC13 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
Description: IGBT TRENCH FS 600V 48A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 424.09 грн |
| 30+ | 231.25 грн |
| 120+ | 192.28 грн |
| 510+ | 153.63 грн |
| TCSOM0J226M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT POLY 22UF 6.3V 0603
Description: CAP TANT POLY 22UF 6.3V 0603
товару немає в наявності
В кошику
од. на суму грн.
| TCTOA0J107M8R-ZS1 |
![]() |
Виробник: Rohm Semiconductor
Description: CAP TANT POLY 100UF 6.3V 1206
Description: CAP TANT POLY 100UF 6.3V 1206
товару немає в наявності
В кошику
од. на суму грн.
| TCTOA0J107M8R-ZS1 |
![]() |
Виробник: Rohm Semiconductor
Description: CAP TANT POLY 100UF 6.3V 1206
Description: CAP TANT POLY 100UF 6.3V 1206
на замовлення 1249 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BZX84B9V1LYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B9V1LYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2977 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.23 грн |
| 18+ | 18.28 грн |
| 100+ | 8.18 грн |
| 500+ | 7.26 грн |
| 1000+ | 6.14 грн |

















