Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102058) > Сторінка 876 з 1701
| Фото | Назва | Виробник | Інформація |
Доступність |
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R6007END3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 7A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| RPM-22PBEL | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBEM | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBEN | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBFL | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBFN | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBEP | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RPM-22PBFM | Rohm Semiconductor | Description: OPTICAL PHOTOTRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SCT2160KEGC11 | Rohm Semiconductor |
Description: 1200V, 22A, THD, SILICON-CARBIDEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V |
на замовлення 302 шт: термін постачання 21-31 дні (днів) |
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SCT2160KEHRC11 | Rohm Semiconductor |
Description: 1200V, 22A, THD, SILICON-CARBIDEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 374 шт: термін постачання 21-31 дні (днів) |
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BD22621G-MTR | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 5SSOPPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 105°C Output Configuration: High Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 200mA Ratio - Input:Output: 1:1 Supplier Device Package: 5-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD22621G-MTR | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 5SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 105°C Output Configuration: High Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 200mA Ratio - Input:Output: 1:1 Supplier Device Package: 5-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1404 шт: термін постачання 21-31 дні (днів) |
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RRS100P03HZGTB | Rohm Semiconductor |
Description: PCH -30V -10A POWER MOSFET. RRS1Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RRS100P03HZGTB | Rohm Semiconductor |
Description: PCH -30V -10A POWER MOSFET. RRS1Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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DTA123EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3FPackaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA123EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DTA024XEBTL | Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (WITH BUI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA024XEBTL | Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (WITH BUI |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD9E301EFJ-LBH2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2.5A 8HTSOP-JPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 570kHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: Yes Voltage - Output (Max): 25.2V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD9E301EFJ-LBH2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 2.5A 8HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 570kHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-HTSOP-J Synchronous Rectifier: Yes Voltage - Output (Max): 25.2V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 1V |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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QS8J2TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 4A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS8J2TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 4A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 7281 шт: термін постачання 21-31 дні (днів) |
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QS8J5TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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QS8J5TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
на замовлення 2481 шт: термін постачання 21-31 дні (днів) |
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RQ7E100ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
на замовлення 2378 шт: термін постачання 21-31 дні (днів) |
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BA178M08CP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 8V 500MA TO220-3Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 23V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 8V Part Status: Active PSRR: 69dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Current - Supply (Max): 6 mA |
на замовлення 434 шт: термін постачання 21-31 дні (днів) |
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ESR25JZPF10R0 | Rohm Semiconductor |
Description: RES 10 OHM 1% 1W 1210Packaging: Cut Tape (CT) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1210 (3225 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1210 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 10 Ohms |
на замовлення 12548 шт: термін постачання 21-31 дні (днів) |
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BA17818CP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 1A TO220CP-3Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-220CP-3 Voltage - Output (Min/Fixed): 18V Part Status: Active PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA17818CP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 1A TO220CP-3Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-220CP-3 Voltage - Output (Min/Fixed): 18V Part Status: Active PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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BA17818FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 1A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 18V Part Status: Active PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BA17818FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 1A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 18V Part Status: Active PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Current - Supply (Max): 6 mA |
на замовлення 3968 шт: термін постачання 21-31 дні (днів) |
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R6515KNX3C16 | Rohm Semiconductor |
Description: 650V 15A, TO-220AB, HIGH-SPEED SPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 399 шт: термін постачання 21-31 дні (днів) |
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R6515ENXC7G | Rohm Semiconductor |
Description: 650V 15A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 430µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6515KNXC7G | Rohm Semiconductor |
Description: 650V 15A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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BU64295GWZ-TR | Rohm Semiconductor |
Description: BI-DIRECTIONAL VCM DRIVER FOR AUPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: I2C Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Applications: Digital Audio Interfacing Supplier Device Package: UCSP30L1 Part Status: Not For New Designs Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU64295GWZ-TR | Rohm Semiconductor |
Description: BI-DIRECTIONAL VCM DRIVER FOR AUPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: I2C Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Applications: Digital Audio Interfacing Supplier Device Package: UCSP30L1 Part Status: Not For New Designs Number of Channels: 2 |
на замовлення 5942 шт: термін постачання 21-31 дні (днів) |
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BU64292GWZ-TR | Rohm Semiconductor |
Description: UNI-DIRECTIONAL VCM DRIVER FOR APackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: I2C Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.5V ~ 3.6V Applications: Digital Audio Interfacing Supplier Device Package: UCSP25L1 Part Status: Active Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU64292GWZ-TR | Rohm Semiconductor |
Description: UNI-DIRECTIONAL VCM DRIVER FOR APackaging: Cut Tape (CT) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: I2C Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.5V ~ 3.6V Applications: Digital Audio Interfacing Supplier Device Package: UCSP25L1 Part Status: Active Number of Channels: 2 |
на замовлення 5999 шт: термін постачання 21-31 дні (днів) |
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BU64291GWZ-TR | Rohm Semiconductor |
Description: LINEAR/PWM CONSTANT CURRENT VCMPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: Serial Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Applications: Digital Audio Interfacing Supplier Device Package: UCSP30L1 Part Status: Active Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU64291GWZ-TR | Rohm Semiconductor |
Description: LINEAR/PWM CONSTANT CURRENT VCMPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, CSPBGA Function: Line Driver Interface: Serial Operating Temperature: -25°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Applications: Digital Audio Interfacing Supplier Device Package: UCSP30L1 Part Status: Active Number of Channels: 2 |
на замовлення 5999 шт: термін постачання 21-31 дні (днів) |
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BU64241GWZ-E2 | Rohm Semiconductor |
Description: IC LINE DRIVER 6UCSP30L1Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RD3S100AAFRATL | Rohm Semiconductor |
Description: MOSFET N-CH 190V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RD3S100AAFRATL | Rohm Semiconductor |
Description: MOSFET N-CH 190V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1515 шт: термін постачання 21-31 дні (днів) |
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UMZ36NUMTL | Rohm Semiconductor |
Description: TVS DIODE 33VWM UMD3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: UMD3F Unidirectional Channels: 2 Voltage - Breakdown (Min): 35.07V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UMZ36NUMTL | Rohm Semiconductor |
Description: TVS DIODE 33VWM UMD3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: UMD3F Unidirectional Channels: 2 Voltage - Breakdown (Min): 35.07V Power Line Protection: No |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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DTA144ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA144ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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DTA144EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA144EU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
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DTA144EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTA144EMFHAT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 21160 шт: термін постачання 21-31 дні (днів) |
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R6011KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6011KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6011KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6011KND3TL1 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 11A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
на замовлення 2470 шт: термін постачання 21-31 дні (днів) |
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R6011ENXC7G | Rohm Semiconductor |
Description: 600V 11A TO-220FM, LOW-NOISE POWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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R6011KNXC7G | Rohm Semiconductor |
Description: 600V 11A TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
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BD2066FJ-E2 | Rohm Semiconductor |
Description: IC SWITCH USB HI SIDE 2CH 8SOJPPackaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF4L040ATTCR | Rohm Semiconductor |
Description: PCH -60V -4A POWER, DFN2020, MOSPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RF4L040ATTCR | Rohm Semiconductor |
Description: PCH -60V -4A POWER, DFN2020, MOSPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V |
на замовлення 5872 шт: термін постачання 21-31 дні (днів) |
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| R6007END3TL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 182.24 грн |
| 10+ | 145.64 грн |
| 100+ | 115.87 грн |
| 500+ | 92.01 грн |
| 1000+ | 78.07 грн |
| RPM-22PBEL |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBEM |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBEN |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBFL |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBFN |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBEP |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| RPM-22PBFM |
Виробник: Rohm Semiconductor
Description: OPTICAL PHOTOTRANSISTOR
Description: OPTICAL PHOTOTRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| SCT2160KEGC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 22A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
Description: 1200V, 22A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
на замовлення 302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1170.95 грн |
| 10+ | 917.40 грн |
| SCT2160KEHRC11 |
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Виробник: Rohm Semiconductor
Description: 1200V, 22A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V, 22A, THD, SILICON-CARBIDE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 374 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1154.77 грн |
| 30+ | 1014.58 грн |
| BD22621G-MTR |
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Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| BD22621G-MTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 200mA
Ratio - Input:Output: 1:1
Supplier Device Package: 5-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1404 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.08 грн |
| 10+ | 67.74 грн |
| 25+ | 61.31 грн |
| 100+ | 50.96 грн |
| 250+ | 47.82 грн |
| 500+ | 45.93 грн |
| 1000+ | 43.65 грн |
| RRS100P03HZGTB |
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Виробник: Rohm Semiconductor
Description: PCH -30V -10A POWER MOSFET. RRS1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Qualification: AEC-Q101
Description: PCH -30V -10A POWER MOSFET. RRS1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| RRS100P03HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -10A POWER MOSFET. RRS1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Qualification: AEC-Q101
Description: PCH -30V -10A POWER MOSFET. RRS1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.94 грн |
| 10+ | 128.59 грн |
| 100+ | 88.45 грн |
| 500+ | 67.70 грн |
| DTA123EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.57 грн |
| DTA123EEBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DTA024XEBTL |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.06 грн |
| DTA024XEBTL |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.03 грн |
| 22+ | 15.17 грн |
| 100+ | 8.27 грн |
| 500+ | 4.78 грн |
| 1000+ | 3.26 грн |
| BD9E301EFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
товару немає в наявності
В кошику
од. на суму грн.
| BD9E301EFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 469.23 грн |
| 10+ | 296.94 грн |
| 25+ | 256.51 грн |
| 100+ | 197.78 грн |
| QS8J2TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 12V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.51 грн |
| QS8J2TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 12V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 7281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.00 грн |
| 10+ | 66.01 грн |
| 100+ | 43.89 грн |
| 500+ | 32.28 грн |
| 1000+ | 29.41 грн |
| QS8J5TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| QS8J5TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.55 грн |
| 10+ | 97.09 грн |
| 100+ | 65.84 грн |
| 500+ | 49.22 грн |
| 1000+ | 46.98 грн |
| RQ7E100ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Description: MOSFET P-CH 30V 10A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
на замовлення 2378 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.69 грн |
| 10+ | 95.86 грн |
| 100+ | 64.60 грн |
| 500+ | 48.05 грн |
| 1000+ | 44.00 грн |
| BA178M08CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 8V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 8V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 23V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
Part Status: Active
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.82 грн |
| 10+ | 81.68 грн |
| 25+ | 74.13 грн |
| 100+ | 61.85 грн |
| 250+ | 58.15 грн |
| ESR25JZPF10R0 |
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Виробник: Rohm Semiconductor
Description: RES 10 OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 Ohms
Description: RES 10 OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 Ohms
на замовлення 12548 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.40 грн |
| 24+ | 13.86 грн |
| 50+ | 9.84 грн |
| 100+ | 7.59 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.94 грн |
| BA17818CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 1A TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 1A TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
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| BA17818CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 1A TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 1A TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 204.38 грн |
| 10+ | 123.50 грн |
| 25+ | 104.48 грн |
| 100+ | 77.81 грн |
| BA17818FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 43.81 грн |
| BA17818FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Supply (Max): 6 mA
на замовлення 3968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.04 грн |
| 10+ | 88.89 грн |
| 25+ | 84.40 грн |
| 100+ | 65.05 грн |
| 250+ | 60.80 грн |
| 500+ | 53.73 грн |
| 1000+ | 41.72 грн |
| R6515KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 15A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: 650V 15A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 399 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.81 грн |
| 50+ | 117.24 грн |
| 100+ | 113.80 грн |
| R6515ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Description: 650V 15A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 430µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 369.59 грн |
| 50+ | 185.17 грн |
| 100+ | 170.12 грн |
| 500+ | 131.91 грн |
| 1000+ | 123.00 грн |
| R6515KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: 650V 15A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.91 грн |
| 50+ | 129.49 грн |
| 100+ | 129.10 грн |
| 500+ | 117.73 грн |
| BU64295GWZ-TR |
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Виробник: Rohm Semiconductor
Description: BI-DIRECTIONAL VCM DRIVER FOR AU
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Not For New Designs
Number of Channels: 2
Description: BI-DIRECTIONAL VCM DRIVER FOR AU
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Not For New Designs
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| BU64295GWZ-TR |
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Виробник: Rohm Semiconductor
Description: BI-DIRECTIONAL VCM DRIVER FOR AU
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Not For New Designs
Number of Channels: 2
Description: BI-DIRECTIONAL VCM DRIVER FOR AU
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Not For New Designs
Number of Channels: 2
на замовлення 5942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.30 грн |
| 10+ | 92.26 грн |
| 25+ | 87.55 грн |
| 100+ | 67.49 грн |
| 250+ | 63.09 грн |
| 500+ | 55.75 грн |
| 1000+ | 43.29 грн |
| 2500+ | 40.40 грн |
| BU64292GWZ-TR |
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Виробник: Rohm Semiconductor
Description: UNI-DIRECTIONAL VCM DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP25L1
Part Status: Active
Number of Channels: 2
Description: UNI-DIRECTIONAL VCM DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP25L1
Part Status: Active
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| BU64292GWZ-TR |
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Виробник: Rohm Semiconductor
Description: UNI-DIRECTIONAL VCM DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP25L1
Part Status: Active
Number of Channels: 2
Description: UNI-DIRECTIONAL VCM DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP25L1
Part Status: Active
Number of Channels: 2
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.39 грн |
| 10+ | 41.90 грн |
| 25+ | 39.33 грн |
| 100+ | 30.14 грн |
| 250+ | 28.00 грн |
| 500+ | 23.83 грн |
| 1000+ | 18.75 грн |
| 2500+ | 16.99 грн |
| BU64291GWZ-TR |
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Виробник: Rohm Semiconductor
Description: LINEAR/PWM CONSTANT CURRENT VCM
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: Serial
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Active
Number of Channels: 2
Description: LINEAR/PWM CONSTANT CURRENT VCM
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: Serial
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Active
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| BU64291GWZ-TR |
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Виробник: Rohm Semiconductor
Description: LINEAR/PWM CONSTANT CURRENT VCM
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: Serial
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Active
Number of Channels: 2
Description: LINEAR/PWM CONSTANT CURRENT VCM
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, CSPBGA
Function: Line Driver
Interface: Serial
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Applications: Digital Audio Interfacing
Supplier Device Package: UCSP30L1
Part Status: Active
Number of Channels: 2
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.13 грн |
| 10+ | 58.06 грн |
| 25+ | 55.11 грн |
| 100+ | 42.49 грн |
| 250+ | 39.71 грн |
| 500+ | 35.10 грн |
| 1000+ | 27.25 грн |
| 2500+ | 25.44 грн |
| BU64241GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: IC LINE DRIVER 6UCSP30L1
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Not For New Designs
Description: IC LINE DRIVER 6UCSP30L1
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Part Status: Not For New Designs
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В кошику
од. на суму грн.
| RD3S100AAFRATL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 190V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 190V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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| RD3S100AAFRATL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 190V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 190V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.45 грн |
| 10+ | 151.63 грн |
| 100+ | 110.69 грн |
| 500+ | 96.53 грн |
| UMZ36NUMTL |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 33VWM UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: UMD3F
Unidirectional Channels: 2
Voltage - Breakdown (Min): 35.07V
Power Line Protection: No
Description: TVS DIODE 33VWM UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: UMD3F
Unidirectional Channels: 2
Voltage - Breakdown (Min): 35.07V
Power Line Protection: No
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| UMZ36NUMTL |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 33VWM UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: UMD3F
Unidirectional Channels: 2
Voltage - Breakdown (Min): 35.07V
Power Line Protection: No
Description: TVS DIODE 33VWM UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: UMD3F
Unidirectional Channels: 2
Voltage - Breakdown (Min): 35.07V
Power Line Protection: No
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.92 грн |
| 14+ | 23.95 грн |
| 100+ | 12.05 грн |
| 500+ | 10.02 грн |
| 1000+ | 7.80 грн |
| DTA144ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| DTA144ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.74 грн |
| 31+ | 10.91 грн |
| 100+ | 6.76 грн |
| 500+ | 4.64 грн |
| DTA144EU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| DTA144EU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.48 грн |
| 39+ | 8.61 грн |
| 100+ | 5.31 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.19 грн |
| DTA144EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.54 грн |
| DTA144EMFHAT2L |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 21160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.48 грн |
| 38+ | 8.69 грн |
| 100+ | 5.40 грн |
| 500+ | 3.70 грн |
| 1000+ | 3.26 грн |
| 2000+ | 2.88 грн |
| R6011KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
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| R6011KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
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| R6011KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
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| R6011KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.34 грн |
| 10+ | 186.73 грн |
| 100+ | 148.65 грн |
| 500+ | 118.04 грн |
| 1000+ | 100.16 грн |
| R6011ENXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 11A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 600V 11A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 174.58 грн |
| 50+ | 108.23 грн |
| 100+ | 107.49 грн |
| 500+ | 96.50 грн |
| R6011KNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Description: 600V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.91 грн |
| 50+ | 146.69 грн |
| 100+ | 133.03 грн |
| 500+ | 102.39 грн |
| BD2066FJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC SWITCH USB HI SIDE 2CH 8SOJP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC SWITCH USB HI SIDE 2CH 8SOJP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| RF4L040ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -60V -4A POWER, DFN2020, MOS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
Description: PCH -60V -4A POWER, DFN2020, MOS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.26 грн |
| RF4L040ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -60V -4A POWER, DFN2020, MOS
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
Description: PCH -60V -4A POWER, DFN2020, MOS
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
на замовлення 5872 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.95 грн |
| 10+ | 46.74 грн |
| 100+ | 37.82 грн |
| 500+ | 27.65 грн |
| 1000+ | 25.13 грн |























