Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105892) > Сторінка 911 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| BD9E151ANUX-EVK-101 | Rohm Semiconductor | Description: EVAL BOARD FOR BD9E151A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RBQ10RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBQ10RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 10A TO277ACurrent - Reverse Leakage @ Vr: 250 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-277A Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 1739 шт: термін постачання 21-31 дні (днів) |
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MNR14ERAPJ183 | Rohm Semiconductor |
Description: RES ARRAY 4 RES 18K OHM 1206Number of Resistors: 4 Part Status: Discontinued at Digi-Key Height - Seated (Max): 0.024" (0.60mm) Operating Temperature: -55°C ~ 155°C Mounting Type: Surface Mount Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±200ppm/°C Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals Number of Pins: 8 Circuit Type: Isolated Resistance (Ohms): 18k Packaging: Tape & Reel (TR) Power Per Element: 62.5mW Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SFR01MZPF1431 | Rohm Semiconductor |
Description: RES SMD 1.43K OHM 1% 1/16W 0402 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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BAT54AHYFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAT54AHYFHT116 | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 30V 200MA SSD3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 3016 шт: термін постачання 21-31 дні (днів) |
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BR25A512F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOPMemory Organization: 64K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR25A512F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOPMemory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
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BR25A256FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8SOPJDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR25A256FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8SOPJDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3193 шт: термін постачання 21-31 дні (днів) |
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BR25A512FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8SOPJDigiKey Programmable: Not Verified Memory Organization: 64K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25A512FJ-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 1655 шт: термін постачання 21-31 дні (днів) |
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BR25A512FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25A512FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT SPI 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 2905 шт: термін постачання 21-31 дні (днів) |
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BR25A256FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25A256FVT-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR25A256F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25A256F-3MGE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BM1P10CFJ-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM1P10 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SLR-342MGT32 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED T-1 T/HLens Size: 3.10mm Dia Lens Style: Round with Domed Top Part Status: Not For New Designs Lens Transparency: Diffused Supplier Device Package: T-1 Wavelength - Dominant: 572nm Height (Max): 5.40mm Viewing Angle: 40° Current - Test: 10mA Lens Color: Green Voltage - Forward (Vf) (Typ): 2.1V Configuration: Standard Millicandela Rating: 16mcd Mounting Type: Through Hole Color: Green Package / Case: Radial Packaging: Cut Tape (CT) |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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SLR-342MGT32 | Rohm Semiconductor |
Description: LED GREEN DIFFUSED T-1 T/HLens Size: 3.10mm Dia Lens Style: Round with Domed Top Part Status: Not For New Designs Lens Transparency: Diffused Supplier Device Package: T-1 Wavelength - Dominant: 572nm Height (Max): 5.40mm Viewing Angle: 40° Current - Test: 10mA Lens Color: Green Voltage - Forward (Vf) (Typ): 2.1V Configuration: Standard Millicandela Rating: 16mcd Mounting Type: Through Hole Color: Green Package / Case: Radial Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBQ5RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBQ5RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 140 µA @ 100 V |
на замовлення 3712 шт: термін постачання 21-31 дні (днів) |
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RBQ3RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBQ3RSM10BTL1 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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SML-D13WWT86A | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SML-D13WWT86A | Rohm Semiconductor |
Description: LED YELLOW 0603 SMDPackaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: Yellow Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 112mcd Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 587nm Supplier Device Package: 0603 Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
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RGTH40TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO-247GPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 144 W |
на замовлення 583 шт: термін постачання 21-31 дні (днів) |
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 500MA 8HTSOPCurrent - Supply (Max): 700 µA Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.9V @ 500mA Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 5.5V Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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BD18IA5MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 500MA 8HTSOPCurrent - Supply (Max): 700 µA Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.9V @ 500mA Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 5.5V Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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BD18GC0MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1A 8-HTSOP-JCurrent - Supply (Max): 1.2 mA Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 1.2V @ 1A Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 8-HTSOP-J Number of Regulators: 1 Voltage - Input (Max): 14V Output Configuration: Positive Operating Temperature: -40°C ~ 105°C Current - Output: 1A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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BD18FD0WHFP-TR | Rohm Semiconductor |
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCUProtection Features: Over Current, Over Temperature, Short Circuit PSRR: 55dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: HRP-5 Number of Regulators: 1 Voltage - Input (Max): 32V Current - Quiescent (Iq): 1 mA Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 2A Mounting Type: Surface Mount Output Type: Fixed Package / Case: HRP-5 (5 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD18FD0WHFP-TR | Rohm Semiconductor |
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCUProtection Features: Over Current, Over Temperature, Short Circuit PSRR: 55dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: HRP-5 Number of Regulators: 1 Voltage - Input (Max): 32V Current - Quiescent (Iq): 1 mA Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 2A Mounting Type: Surface Mount Output Type: Fixed Package / Case: HRP-5 (5 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 1931 шт: термін постачання 21-31 дні (днів) |
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD18HC5MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD18HA3MEFJ-ME2 | Rohm Semiconductor |
Description: IC REG LIN 1.8V 300MA 8HTSOP-J |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| RB520S-40FHTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMDPackaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RB520S-403TTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RJ1L12CGNTLL | Rohm Semiconductor |
Description: NCH 60V 120A POWER MOSFET: RJ1L1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RJ1L12CGNTLL | Rohm Semiconductor |
Description: NCH 60V 120A POWER MOSFET: RJ1L1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 30A LPDSCurrent - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30NS100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 30A LPDSCurrent - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNCurrent - Reverse Leakage @ Vr: 450 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNCurrent - Reverse Leakage @ Vr: 450 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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SCT3120AW7TL | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Power Dissipation (Max): 100W Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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RB551VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2Current - Reverse Leakage @ Vr: 300 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Power Dissipation (Max): 68W (Tc) Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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R6020ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R6020JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFPower Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bag Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 3.5mA |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 304W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| BD9E151ANUX-EVK-101 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD9E151A
Description: EVAL BOARD FOR BD9E151A
товару немає в наявності
В кошику
од. на суму грн.
| RBQ10RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ10RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 10A TO277A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-277A
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 1739 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.66 грн |
| 10+ | 92.54 грн |
| 50+ | 69.82 грн |
| 100+ | 58.65 грн |
| 500+ | 46.59 грн |
| MNR14ERAPJ183 |
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Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 18K OHM 1206
Number of Resistors: 4
Part Status: Discontinued at Digi-Key
Height - Seated (Max): 0.024" (0.60mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Resistance (Ohms): 18k
Packaging: Tape & Reel (TR)
Power Per Element: 62.5mW
Tolerance: ±5%
Description: RES ARRAY 4 RES 18K OHM 1206
Number of Resistors: 4
Part Status: Discontinued at Digi-Key
Height - Seated (Max): 0.024" (0.60mm)
Operating Temperature: -55°C ~ 155°C
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
Number of Pins: 8
Circuit Type: Isolated
Resistance (Ohms): 18k
Packaging: Tape & Reel (TR)
Power Per Element: 62.5mW
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPF1431 |
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Виробник: Rohm Semiconductor
Description: RES SMD 1.43K OHM 1% 1/16W 0402
Description: RES SMD 1.43K OHM 1% 1/16W 0402
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BAT54AHYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.20 грн |
| BAT54AHYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 30V 200MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.37 грн |
| 11+ | 29.02 грн |
| 50+ | 21.14 грн |
| 100+ | 17.44 грн |
| 500+ | 13.22 грн |
| BR25A512F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 60.23 грн |
| BR25A512F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Description: IC EEPROM 512KBIT SPI 10MHZ 8SOP
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 98.19 грн |
| 25+ | 95.38 грн |
| 50+ | 87.52 грн |
| 100+ | 85.53 грн |
| 250+ | 82.88 грн |
| 500+ | 79.56 грн |
| 1000+ | 77.61 грн |
| BR25A256FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 256KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 62.81 грн |
| BR25A256FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 256KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.54 грн |
| 10+ | 67.42 грн |
| 25+ | 65.57 грн |
| 50+ | 60.18 грн |
| 100+ | 58.83 грн |
| 250+ | 57.03 грн |
| 500+ | 54.76 грн |
| 1000+ | 53.44 грн |
| BR25A512FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 512KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 64K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR25A512FJ-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 98.19 грн |
| 25+ | 95.38 грн |
| 50+ | 87.52 грн |
| 100+ | 85.53 грн |
| 250+ | 82.88 грн |
| 500+ | 79.56 грн |
| 1000+ | 77.61 грн |
| BR25A512FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR25A512FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 98.19 грн |
| 25+ | 95.38 грн |
| 50+ | 87.52 грн |
| 100+ | 85.53 грн |
| 250+ | 82.88 грн |
| 500+ | 79.56 грн |
| 1000+ | 77.61 грн |
| BR25A256FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
Description: IC EEPROM 256KBIT SPI 8TSSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR25A256FVT-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 8TSSOP
Description: IC EEPROM 256KBIT SPI 8TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| BR25A256F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR25A256F-3MGE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
Description: IC EEPROM 256KBIT SPI 10MHZ 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| BM1P10CFJ-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM1P10
Description: EVAL BOARD FOR BM1P10
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19023.95 грн |
| SLR-342MGT32 |
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Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED T-1 T/H
Lens Size: 3.10mm Dia
Lens Style: Round with Domed Top
Part Status: Not For New Designs
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Dominant: 572nm
Height (Max): 5.40mm
Viewing Angle: 40°
Current - Test: 10mA
Lens Color: Green
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 16mcd
Mounting Type: Through Hole
Color: Green
Package / Case: Radial
Packaging: Cut Tape (CT)
Description: LED GREEN DIFFUSED T-1 T/H
Lens Size: 3.10mm Dia
Lens Style: Round with Domed Top
Part Status: Not For New Designs
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Dominant: 572nm
Height (Max): 5.40mm
Viewing Angle: 40°
Current - Test: 10mA
Lens Color: Green
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 16mcd
Mounting Type: Through Hole
Color: Green
Package / Case: Radial
Packaging: Cut Tape (CT)
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.40 грн |
| 12+ | 26.50 грн |
| 100+ | 15.23 грн |
| SLR-342MGT32 |
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Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED T-1 T/H
Lens Size: 3.10mm Dia
Lens Style: Round with Domed Top
Part Status: Not For New Designs
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Dominant: 572nm
Height (Max): 5.40mm
Viewing Angle: 40°
Current - Test: 10mA
Lens Color: Green
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 16mcd
Mounting Type: Through Hole
Color: Green
Package / Case: Radial
Packaging: Tape & Box (TB)
Description: LED GREEN DIFFUSED T-1 T/H
Lens Size: 3.10mm Dia
Lens Style: Round with Domed Top
Part Status: Not For New Designs
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Dominant: 572nm
Height (Max): 5.40mm
Viewing Angle: 40°
Current - Test: 10mA
Lens Color: Green
Voltage - Forward (Vf) (Typ): 2.1V
Configuration: Standard
Millicandela Rating: 16mcd
Mounting Type: Through Hole
Color: Green
Package / Case: Radial
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| RBQ5RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ5RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.90 грн |
| 10+ | 74.83 грн |
| 100+ | 50.04 грн |
| 500+ | 36.97 грн |
| 1000+ | 33.75 грн |
| 2000+ | 31.05 грн |
| RBQ3RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RBQ3RSM10BTL1 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 65.21 грн |
| 50+ | 48.64 грн |
| 100+ | 40.63 грн |
| 500+ | 31.79 грн |
| SML-D13WWT86A |
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Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SML-D13WWT86A |
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Виробник: Rohm Semiconductor
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED YELLOW 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 112mcd
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 587nm
Supplier Device Package: 0603
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 14+ | 23.36 грн |
| 100+ | 15.03 грн |
| 500+ | 11.03 грн |
| 1000+ | 10.09 грн |
| RGTH40TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
Description: IGBT TRENCH FS 650V 40A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
на замовлення 583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 447.21 грн |
| 10+ | 288.55 грн |
| 100+ | 208.12 грн |
| BD18IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BD18IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1.8V 500MA 8HTSOP
Current - Supply (Max): 700 µA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.9V @ 500mA
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.72 грн |
| 10+ | 114.46 грн |
| 25+ | 96.76 грн |
| 100+ | 72.03 грн |
| BD18GC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1A 8-HTSOP-J
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V 1A 8-HTSOP-J
Current - Supply (Max): 1.2 mA
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 1.2V @ 1A
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 8-HTSOP-J
Number of Regulators: 1
Voltage - Input (Max): 14V
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BD18FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BD18FD0WHFP-TR |
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Виробник: Rohm Semiconductor
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Cut Tape (CT)
Description: 2A 1.8V, FIXED OUTPUT, HIGH-ACCU
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: HRP-5
Number of Regulators: 1
Voltage - Input (Max): 32V
Current - Quiescent (Iq): 1 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: HRP-5 (5 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 1931 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.70 грн |
| 10+ | 158.06 грн |
| 25+ | 134.69 грн |
| 100+ | 101.56 грн |
| 250+ | 89.36 грн |
| 500+ | 81.85 грн |
| 1000+ | 74.33 грн |
| BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD18HC5MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
Description: IC REG LINEAR 1.8V 1.5A 8HTSOP-J
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 94.38 грн |
| 25+ | 89.61 грн |
| 100+ | 69.08 грн |
| 250+ | 64.58 грн |
| 500+ | 57.07 грн |
| 1000+ | 44.32 грн |
| BD18HA3MEFJ-ME2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
Description: IC REG LIN 1.8V 300MA 8HTSOP-J
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RB520S-40FHTE61 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| RB520S-403TTE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Description: DIODE SCHOTTKY SMD
товару немає в наявності
В кошику
од. на суму грн.
| RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 253.18 грн |
| RJ1L12CGNTLL |
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Виробник: Rohm Semiconductor
Description: NCH 60V 120A POWER MOSFET: RJ1L1
Description: NCH 60V 120A POWER MOSFET: RJ1L1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 479.72 грн |
| 10+ | 414.46 грн |
| 100+ | 339.58 грн |
| 500+ | 271.29 грн |
| RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 109.91 грн |
| 2000+ | 99.66 грн |
| RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.50 грн |
| 10+ | 171.88 грн |
| 100+ | 139.05 грн |
| 500+ | 116.00 грн |
| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCT3120AW7TL |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.65 грн |
| 10+ | 118.96 грн |
| 25+ | 100.64 грн |
| 100+ | 75.04 грн |
| 250+ | 65.51 грн |
| 500+ | 59.65 грн |
| 1000+ | 53.84 грн |
| RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
на замовлення 1952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.16 грн |
| 10+ | 40.24 грн |
| 100+ | 30.01 грн |
| 500+ | 22.13 грн |
| 1000+ | 17.10 грн |
| RB551VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.13 грн |
| 16+ | 20.16 грн |
| 100+ | 10.19 грн |
| 500+ | 7.80 грн |
| 1000+ | 5.79 грн |
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.44 грн |
| 10+ | 37.19 грн |
| 25+ | 36.22 грн |
| 50+ | 33.28 грн |
| 100+ | 32.56 грн |
| 250+ | 31.60 грн |
| 500+ | 30.36 грн |
| 1000+ | 29.64 грн |
| R6020KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.22 грн |
| R6020ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 493.20 грн |
| 30+ | 271.19 грн |
| 120+ | 226.34 грн |
| 510+ | 181.56 грн |
| R6020JNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.60 грн |
| 10+ | 208.99 грн |
| R6020ENZC17 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 427.39 грн |
| 30+ | 223.52 грн |
| 120+ | 207.91 грн |
| R6020FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| R6020KNZ1C9 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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В кошику
од. на суму грн.
| R6020JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 639.89 грн |
| 10+ | 420.26 грн |




























