Результат пошуку "1N65" : > 120
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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T571N65TOF |
на замовлення 6 шт: термін постачання 14-28 дні (днів) |
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U01N65 |
на замовлення 50000 шт: термін постачання 14-28 дні (днів) |
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WSK01N65-SL | tech |
на замовлення 8400 шт: термін постачання 14-28 дні (днів) |
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MDF11N65B Код товару: 112052 |
Транзистори > Польові N-канальні |
товар відсутній
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STB21N65M5 Код товару: 190960 |
Транзистори > Польові N-канальні |
товар відсутній
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STD11N65M5 Код товару: 122180 |
Транзистори > Польові N-канальні |
товар відсутній
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STL21N65M5 Код товару: 106076 |
Транзистори > Польові N-канальні |
товар відсутній
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STW21N65M5 Код товару: 61395 |
Різні комплектуючі > Різні комплектуючі 2 |
товар відсутній
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1N6506 | Microchip Technology | Inverters Arrays |
товар відсутній |
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1N6507 | Microchip Technology | Inverters Arrays |
товар відсутній |
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1N6508 | Microchip Technology | ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube |
товар відсутній |
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1N6508 | Microchip Technology | ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube |
товар відсутній |
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1N6508 | Microchip Technology | ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube |
товар відсутній |
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1N6509 | Microchip Technology | ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube |
товар відсутній |
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1N6509 | Microchip Technology | ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube |
товар відсутній |
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1N6509 | Microchip Technology | Inverters Arrays |
товар відсутній |
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1N6510 | Microchip Technology | Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube |
товар відсутній |
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1N6510 | Microchip Technology | ESD Suppressors / TVS Diodes Arrays |
товар відсутній |
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1N6510 | Microchip Technology | Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube |
товар відсутній |
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1N6511 | Microchip Technology | Inverters Arrays |
товар відсутній |
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1N6519 | VOLTAGE MULTIPLIERS | Rectifier Diode Switching 10KV 0.5A 70ns 2-Pin |
товар відсутній |
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1N6523U | VOLTAGE MULTIPLIERS | Rectifier Diode Switching 3KV 0.25A 70ns 2-Pin |
товар відсутній |
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1N6533U | VOLTAGE MULTIPLIERS | Rectifier Diode Switching 500V 0.05A 70ns 2-Pin |
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1N6536 | Microchip Technology | Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A |
товар відсутній |
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1N6536 | Microchip Technology | Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A |
товар відсутній |
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1N6536 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6536/TR | Microchip Technology | Switching Diode Rectifier |
товар відсутній |
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1N6536/TR | Microchip Technology | Zener Diodes UFR,FRR |
товар відсутній |
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1N6537 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6538 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6538/TR | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6539 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6539/TR | Microchip Technology | Rectifiers UFR,FRR |
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1N6540 | Microchip Technology | Rectifiers UFR,FRR |
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1N6540/TR | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6541 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6542 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6543 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6543/TR | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6544 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6544/TR | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6545 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6545/TR | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6546 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6547 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6548 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6549 | Microchip Technology | Rectifiers UFR,FRR |
товар відсутній |
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1N6541 | MICROSEMI |
A/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N6541 кількість в упаковці: 1 шт |
товар відсутній |
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FCH041N65EF-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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FCH041N65EF-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FCH041N65EFL4 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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FCH041N65EFL4 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FCH041N65F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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FCH041N65F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHA21N65EF-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 53A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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SIHA21N65EF-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 53A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHB21N65EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 53A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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SIHB21N65EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 53A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHG61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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SIHG61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
1N6508 |
Виробник: Microchip Technology
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
товар відсутній
1N6508 |
Виробник: Microchip Technology
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
товар відсутній
1N6508 |
Виробник: Microchip Technology
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
товар відсутній
1N6509 |
Виробник: Microchip Technology
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
товар відсутній
1N6509 |
Виробник: Microchip Technology
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
ESD Suppressor Diode Diode Array Uni-Dir 40V 14-Pin CDIP Tube
товар відсутній
1N6510 |
Виробник: Microchip Technology
Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube
Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube
товар відсутній
1N6510 |
Виробник: Microchip Technology
Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube
Rectifier Diode Switching 0.3A 10ns 16-Pin CFPAK Tube
товар відсутній
1N6533U |
Виробник: VOLTAGE MULTIPLIERS
Rectifier Diode Switching 500V 0.05A 70ns 2-Pin
Rectifier Diode Switching 500V 0.05A 70ns 2-Pin
товар відсутній
1N6536 |
Виробник: Microchip Technology
Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A
Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A
товар відсутній
1N6536 |
Виробник: Microchip Technology
Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A
Rectifier Diode Switching 400V 1A 30ns 2-Pin Case A
товар відсутній
1N6541 |
товар відсутній
FCH041N65EF-F155 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FCH041N65EF-F155 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH041N65EFL4 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FCH041N65EFL4 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH041N65F-F085 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
FCH041N65F-F085 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHA21N65EF-E3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SIHA21N65EF-E3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHB21N65EF-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHB21N65EF-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 53A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 53A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHG61N65EF-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SIHG61N65EF-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній