Результат пошуку "4N80" : > 120
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SPA04N80C3XKSA1 | Infineon |
![SPP_A04N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a601163851748000c0](/images/adobe-acrobat.png) |
на замовлення 21000 шт: термін постачання 14-28 дні (днів) |
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| SSF4N80AS |
на замовлення 5800 шт: термін постачання 14-28 дні (днів) |
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| SSP4N80 | Fairchild |
на замовлення 2380 шт: термін постачання 14-28 дні (днів) |
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| SSP4N80A |
на замовлення 1135 шт: термін постачання 14-28 дні (днів) |
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| SSP4N80A(S) |
на замовлення 669 шт: термін постачання 14-28 дні (днів) |
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| SSS4N80A |
на замовлення 2441 шт: термін постачання 14-28 дні (днів) |
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| SSS4N80AS |
на замовлення 10000 шт: термін постачання 14-28 дні (днів) |
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| SSW4N80AS |
на замовлення 2400 шт: термін постачання 14-28 дні (днів) |
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| SSW4N80TM |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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| STB4N80ET4 |
на замовлення 38400 шт: термін постачання 14-28 дні (днів) |
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| STP4N80 |
на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
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| TD104N800KOF | AEG | 05+ |
на замовлення 300 шт: термін постачання 14-28 дні (днів) |
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| ZRA124N801 |
на замовлення 521 шт: термін постачання 14-28 дні (днів) |
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| ZRA124N801TA |
на замовлення 503 шт: термін постачання 14-28 дні (днів) |
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FQP4N80 Код товару: 162318 |
Транзистори > Польові N-канальні |
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IXFH24N80P транизстор Код товару: 55518 |
Різні комплектуючі > Різні комплектуючі 2 |
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IXFK34N80 Код товару: 43387 |
Транзистори > IGBT |
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IXFK44N80P Код товару: 170265 |
Транзистори > Польові N-канальні |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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| APT34N80B2C3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT34N80B2C3G | Microchip Technology |
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) T-MAX Tube |
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APT34N80B2C3G | Microchip Technology |
MOSFET MOSFET COOLMOS 800 V 34 A TO-247 MAX |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
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APT34N80LC3G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO264 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT34N80LC3G | Microchip Technology |
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) TO-264 Tube |
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APT34N80LC3G | Microchip Technology |
MOSFET MOSFET COOLMOS 800 V 34 A TO-264 |
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| BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| FQB4N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FQB4N80TM | ON Semiconductor |
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R |
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FQB4N80TM | onsemi / Fairchild |
MOSFET 800V N-Channel QFET |
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| FQI4N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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| FQI4N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQP4N80 | ON Semiconductor |
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220 Tube |
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IXFH14N80 | IXYS |
MOSFET 14 Amps 800V 0.7 Rds |
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IXFH14N80P | Littelfuse |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD |
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IXFH24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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IXFH24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFH24N80P | Littelfuse |
Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247AD |
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IXFK24N80P | IXYS |
MOSFET 24 Amps 800V 0.4 Rds |
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IXFK34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: TO264 On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
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IXFK34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: TO264 On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFK34N80 | Littelfuse |
Trans MOSFET N-CH Si 800V 34A 3-Pin(3+Tab) TO-264AA |
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IXFK44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced |
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IXFK44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFK44N80Q3 | Littelfuse |
Trans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264 |
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IXFK44N80Q3 | IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A |
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IXFN34N80 | IXYS |
 Discrete Semiconductor Modules 34 Amps 800V 0.24 Rds |
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IXFN44N80 | IXYS |
Discrete Semiconductor Modules 44 Amps 800V 0.145 Rds |
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IXFN44N80P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 39A Pulsed drain current: 100A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.19Ω Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN44N80P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 39A Pulsed drain current: 100A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.19Ω Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN44N80P | Littelfuse |
Trans MOSFET N-CH 800V 39A 4-Pin SOT-227B |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN44N80Q3 | IXYS |
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 800V/37A |
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IXFN44N80Q3 | Littelfuse |
Trans MOSFET N-CH 800V 37A 4-Pin SOT-227B |
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IXFR24N80P | Littelfuse |
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) ISOPLUS 247 |
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IXFR44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFR44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR44N80P | Littelfuse |
Trans MOSFET N-CH Si 800V 25A 3-Pin(3+Tab) ISOPLUS 247 |
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| APT34N80B2C3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
товар відсутній
| APT34N80B2C3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT34N80B2C3G |
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Виробник: Microchip Technology
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT34N80B2C3G |
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Виробник: Microchip Technology
MOSFET MOSFET COOLMOS 800 V 34 A TO-247 MAX
MOSFET MOSFET COOLMOS 800 V 34 A TO-247 MAX
товар відсутній
| APT34N80LC3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
товар відсутній
| APT34N80LC3G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO264
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Pulsed drain current: 102A
Power dissipation: 417W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 355nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT34N80LC3G |
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Виробник: Microchip Technology
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 800V 34A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| FQB4N80TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB4N80TM |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| FQI4N80TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQI4N80TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQP4N80 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| IXFH24N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH24N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFK34N80 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK34N80 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFK44N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK44N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFN44N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN44N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN44N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN44N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN44N80Q3 |
|
Виробник: IXYS
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 800V/37A
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 800V/37A
товар відсутній
| IXFR24N80P |
|
Виробник: Littelfuse
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) ISOPLUS 247
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
| IXFR44N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR44N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR44N80P |
|
Виробник: Littelfuse
Trans MOSFET N-CH Si 800V 25A 3-Pin(3+Tab) ISOPLUS 247
Trans MOSFET N-CH Si 800V 25A 3-Pin(3+Tab) ISOPLUS 247
товар відсутній