Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164566) > Сторінка 41 з 2743
| Фото | Назва | Виробник | Інформація |
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Ціна |
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BTA25-600BW | STMicroelectronics |
Description: TRIAC ALTERNISTOR 600V 25A RD91Packaging: Tube Package / Case: RD91-3 (Insulated) Mounting Type: Chassis Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: RD91 Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
на замовлення 475 шт: термін постачання 21-31 дні (днів) |
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BTA26-600BW | STMicroelectronics |
Description: TRIAC ALTERNISTOR 600V 25A TOP3Packaging: Tube Package / Case: TOP-3 Insulated Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TOP3 Part Status: Obsolete Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BTB06-600TRG | STMicroelectronics |
Description: TRIAC SENS GATE 600V 6A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 600 V |
на замовлення 893 шт: термін постачання 21-31 дні (днів) |
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BU931P | STMicroelectronics |
Description: TRANS NPN DARL 400V 15A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Supplier Device Package: TO-247-3 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 135 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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BU941 | STMicroelectronics |
Description: TRANS NPN DARL 400V 15A TO-3Packaging: Tube Package / Case: TO-204AA, TO-3 Mounting Type: Chassis Mount Transistor Type: NPN - Darlington Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Supplier Device Package: TO-3 Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BUL742A | STMicroelectronics |
Description: TRANS NPN 400V 4A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 800mA, 3V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 70 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| BYT60P-400 | STMicroelectronics |
Description: DIODE ARRAY GP 400V 60A SOD93 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BYW100-200 | STMicroelectronics |
Description: DIODE STANDARD 200V 1.5A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYW100-200 | STMicroelectronics |
Description: DIODE STANDARD 200V 1.5A DO15Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-15 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYW98-200 | STMicroelectronics |
Description: DIODE STANDARD 200V 3A DO201ADPackaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BYW98-200 | STMicroelectronics |
Description: DIODE STANDARD 200V 3A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MJD2955T4 | STMicroelectronics |
Description: TRANS PNP 60V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MJD2955T4 | STMicroelectronics |
Description: TRANS PNP 60V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MJD350T4 | STMicroelectronics |
Description: TRANS PNP 300V 0.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
на замовлення 18850 шт: термін постачання 21-31 дні (днів) |
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MJD350T4 | STMicroelectronics |
Description: TRANS PNP 300V 0.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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SMBJ18A-TR | STMicroelectronics |
Description: TVS DIODE 18VWM 29.2VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SMBJ18A-TR | STMicroelectronics |
Description: TVS DIODE 18VWM 29.2VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 8068 шт: термін постачання 21-31 дні (днів) |
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SMBJ24A-TR | STMicroelectronics |
Description: TVS DIODE 24VWM 38.9VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 24698 шт: термін постачання 21-31 дні (днів) |
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SMBJ24A-TR | STMicroelectronics |
Description: TVS DIODE 24VWM 38.9VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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SMBJ24CA-TR | STMicroelectronics |
Description: TVS DIODE 24VWM 38.9VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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SMBJ24CA-TR | STMicroelectronics |
Description: TVS DIODE 24VWM 38.9VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 12848 шт: термін постачання 21-31 дні (днів) |
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SMBJ30CA-TR | STMicroelectronics |
Description: TVS DIODE 30VWM 48.4VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 8452 шт: термін постачання 21-31 дні (днів) |
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SMBJ30CA-TR | STMicroelectronics |
Description: TVS DIODE 30VWM 48.4VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SMBJ58CA-TR | STMicroelectronics |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.7A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SMBJ58CA-TR | STMicroelectronics |
Description: TVS DIODE 58VWM 93.6VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.7A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 5769 шт: термін постачання 21-31 дні (днів) |
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SMBJ5.0A-TR | STMicroelectronics |
Description: TVS DIODE 5VWM 9.2VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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SMBJ5.0A-TR | STMicroelectronics |
Description: TVS DIODE 5VWM 9.2VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 23212 шт: термін постачання 21-31 дні (днів) |
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SMBJ5.0CA-TR | STMicroelectronics |
Description: TVS DIODE 5VWM 9.2VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SMBJ5.0CA-TR | STMicroelectronics |
Description: TVS DIODE 5VWM 9.2VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 4121 шт: термін постачання 21-31 дні (днів) |
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SMBJ6.5CA-TR | STMicroelectronics |
Description: TVS DIODE 6.5VWM 11.2VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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SMBJ6.5CA-TR | STMicroelectronics |
Description: TVS DIODE 6.5VWM 11.2VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 19489 шт: термін постачання 21-31 дні (днів) |
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SMBYT01-400 | STMicroelectronics |
Description: DIODE STANDARD 400V 1A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBYT01-400 | STMicroelectronics |
Description: DIODE STANDARD 400V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMDB3 | STMicroelectronics |
Description: DIAC/SIDAC 28-36V 1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 10 µA Supplier Device Package: SOT-23-3 Part Status: Active Current - Peak Output: 1 A |
на замовлення 12243 шт: термін постачання 21-31 дні (днів) |
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SMDB3 | STMicroelectronics |
Description: DIAC/SIDAC 28-36V 1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 10 µA Supplier Device Package: SOT-23-3 Part Status: Active Current - Peak Output: 1 A |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ST13005 | STMicroelectronics |
Description: TRANS NPN 400V 4A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ST1802HI | STMicroelectronics |
Description: TRANS NPN 600V 10A ISOWATT-218Packaging: Tube Package / Case: ISOWATT-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V Supplier Device Package: ISOWATT-218 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 50 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STC5NF20V | STMicroelectronics |
Description: MOSFET 2N-CH 20V 5A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STC5NF20V | STMicroelectronics |
Description: MOSFET 2N-CH 20V 5A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STC6NF30V | STMicroelectronics |
Description: MOSFET 2N-CH 30V 6A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STC6NF30V | STMicroelectronics |
Description: MOSFET 2N-CH 30V 6A 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD10NF10T4 | STMicroelectronics |
Description: MOSFET N-CH 100V 13A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD10NF10T4 | STMicroelectronics |
Description: MOSFET N-CH 100V 13A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
на замовлення 8228 шт: термін постачання 21-31 дні (днів) |
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STD12NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 12A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V |
на замовлення 5641 шт: термін постачання 21-31 дні (днів) |
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STD12NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 12A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD17NF03LT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 17A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD17NF03LT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 17A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V |
на замовлення 3803 шт: термін постачання 21-31 дні (днів) |
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STD25NF10LT4 | STMicroelectronics |
Description: MOSFET N-CH 100V 25A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
на замовлення 8643 шт: термін постачання 21-31 дні (днів) |
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STD25NF10LT4 | STMicroelectronics |
Description: MOSFET N-CH 100V 25A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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STD30NF03LT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 30A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD30PF03LT4 | STMicroelectronics |
Description: MOSFET P-CH 30V 24A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD38NH02LT4 | STMicroelectronics |
Description: MOSFET N-CH 24V 38A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD38NH02LT4 | STMicroelectronics |
Description: MOSFET N-CH 24V 38A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD3NM60T4 | STMicroelectronics |
Description: MOSFET N-CH 600V 3A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD3NM60T4 | STMicroelectronics |
Description: MOSFET N-CH 600V 3A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD5NM50T4 | STMicroelectronics |
Description: MOSFET N-CH 500V 7.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD5NM50T4 | STMicroelectronics |
Description: MOSFET N-CH 500V 7.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD5NM60T4 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD5NM60T4 | STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 7055 шт: термін постачання 21-31 дні (днів) |
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STD60NH03L-1 | STMicroelectronics |
Description: MOSFET N-CH 30V 60A I-PAK |
товару немає в наявності |
В кошику од. на суму грн. |
| BTA25-600BW | ![]() |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 25A RD91
Packaging: Tube
Package / Case: RD91-3 (Insulated)
Mounting Type: Chassis Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: RD91
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC ALTERNISTOR 600V 25A RD91
Packaging: Tube
Package / Case: RD91-3 (Insulated)
Mounting Type: Chassis Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: RD91
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 692.82 грн |
| 25+ | 402.66 грн |
| 100+ | 339.72 грн |
| BTA26-600BW | ![]() |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 25A TOP3
Packaging: Tube
Package / Case: TOP-3 Insulated
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TOP3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC ALTERNISTOR 600V 25A TOP3
Packaging: Tube
Package / Case: TOP-3 Insulated
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TOP3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BTB06-600TRG |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 600 V
на замовлення 893 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.64 грн |
| 50+ | 69.24 грн |
| 100+ | 62.01 грн |
| 500+ | 46.27 грн |
| BU931P | ![]() |
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Виробник: STMicroelectronics
Description: TRANS NPN DARL 400V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 135 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN DARL 400V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 135 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 340.11 грн |
| 30+ | 182.33 грн |
| 120+ | 150.27 грн |
| BU941 |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN DARL 400V 15A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 180 W
Description: TRANS NPN DARL 400V 15A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN - Darlington
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 180 W
товару немає в наявності
В кошику
од. на суму грн.
| BUL742A |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 800mA, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Description: TRANS NPN 400V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 800mA, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
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| BYT60P-400 |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 400V 60A SOD93
Description: DIODE ARRAY GP 400V 60A SOD93
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| BYW100-200 |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 1.5A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1.5A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| BYW100-200 |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| BYW98-200 |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| BYW98-200 |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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| MJD2955T4 |
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Виробник: STMicroelectronics
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
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| MJD2955T4 |
![]() |
Виробник: STMicroelectronics
Description: TRANS PNP 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
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| MJD350T4 |
![]() |
Виробник: STMicroelectronics
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 18850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.62 грн |
| 10+ | 48.68 грн |
| 100+ | 31.93 грн |
| 500+ | 23.20 грн |
| 1000+ | 21.02 грн |
| MJD350T4 |
![]() |
Виробник: STMicroelectronics
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 20.65 грн |
| 5000+ | 18.33 грн |
| 7500+ | 17.54 грн |
| 12500+ | 15.63 грн |
| 17500+ | 15.31 грн |
| SMBJ18A-TR |
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Виробник: STMicroelectronics
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.24 грн |
| SMBJ18A-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 8068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.75 грн |
| 16+ | 21.19 грн |
| 100+ | 14.32 грн |
| 500+ | 10.49 грн |
| 1000+ | 8.98 грн |
| SMBJ24A-TR |
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Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 24698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 29+ | 11.48 грн |
| 100+ | 9.99 грн |
| 500+ | 7.73 грн |
| SMBJ24A-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 6.99 грн |
| SMBJ24CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.11 грн |
| SMBJ24CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 12848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 15+ | 21.83 грн |
| 100+ | 15.89 грн |
| 500+ | 11.62 грн |
| 1000+ | 10.50 грн |
| SMBJ30CA-TR | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 8452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.43 грн |
| 15+ | 21.92 грн |
| 100+ | 14.88 грн |
| 500+ | 11.14 грн |
| 1000+ | 9.96 грн |
| SMBJ30CA-TR | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.83 грн |
| 5000+ | 7.32 грн |
| SMBJ58CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.81 грн |
| SMBJ58CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 5769 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 16+ | 21.27 грн |
| 100+ | 14.60 грн |
| 500+ | 10.55 грн |
| 1000+ | 9.75 грн |
| SMBJ5.0A-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.24 грн |
| SMBJ5.0A-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 23212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.35 грн |
| 31+ | 10.76 грн |
| 100+ | 9.50 грн |
| 500+ | 8.72 грн |
| 1000+ | 8.06 грн |
| SMBJ5.0CA-TR | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.12 грн |
| SMBJ5.0CA-TR | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 4121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.43 грн |
| 15+ | 21.92 грн |
| 100+ | 14.88 грн |
| 500+ | 11.40 грн |
| 1000+ | 10.03 грн |
| SMBJ6.5CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.60 грн |
| SMBJ6.5CA-TR |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 19489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.12 грн |
| 34+ | 9.78 грн |
| 100+ | 9.01 грн |
| SMBYT01-400 |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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В кошику
од. на суму грн.
| SMBYT01-400 |
![]() |
Виробник: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| SMDB3 |
![]() |
Виробник: STMicroelectronics
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
на замовлення 12243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.30 грн |
| 10+ | 36.23 грн |
| 100+ | 23.48 грн |
| 500+ | 16.86 грн |
| 1000+ | 15.19 грн |
| SMDB3 |
![]() |
Виробник: STMicroelectronics
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.46 грн |
| 6000+ | 12.79 грн |
| 9000+ | 12.21 грн |
| ST13005 | ![]() |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
товару немає в наявності
В кошику
од. на суму грн.
| ST1802HI |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN 600V 10A ISOWATT-218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Description: TRANS NPN 600V 10A ISOWATT-218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
товару немає в наявності
В кошику
од. на суму грн.
| STC5NF20V |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| STC5NF20V |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| STC6NF30V |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| STC6NF30V |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| STD10NF10T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.26 грн |
| 5000+ | 35.26 грн |
| STD10NF10T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET N-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
на замовлення 8228 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.51 грн |
| STD12NF06T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
на замовлення 5641 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.61 грн |
| 10+ | 68.58 грн |
| 100+ | 48.55 грн |
| 500+ | 38.91 грн |
| 1000+ | 35.58 грн |
| STD12NF06T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.93 грн |
| 5000+ | 31.70 грн |
| STD17NF03LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.25 грн |
| STD17NF03LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
на замовлення 3803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.22 грн |
| 10+ | 43.67 грн |
| 100+ | 28.48 грн |
| 500+ | 20.60 грн |
| 1000+ | 18.63 грн |
| STD25NF10LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
на замовлення 8643 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.50 грн |
| 10+ | 136.02 грн |
| 100+ | 94.02 грн |
| 500+ | 73.61 грн |
| STD25NF10LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 66.55 грн |
| STD30NF03LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Description: MOSFET N-CH 30V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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| STD30PF03LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
Description: MOSFET P-CH 30V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
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| STD38NH02LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 24V 38A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 24V 38A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
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| STD38NH02LT4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 24V 38A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 24V 38A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
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| STD3NM60T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3A DPAK
Description: MOSFET N-CH 600V 3A DPAK
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| STD3NM60T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3A DPAK
Description: MOSFET N-CH 600V 3A DPAK
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| STD5NM50T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Description: MOSFET N-CH 500V 7.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
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| STD5NM50T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Description: MOSFET N-CH 500V 7.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
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| STD5NM60T4 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 67.45 грн |
| STD5NM60T4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 7055 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.34 грн |
| 10+ | 79.49 грн |
| STD60NH03L-1 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 60A I-PAK
Description: MOSFET N-CH 30V 60A I-PAK
товару немає в наявності
В кошику
од. на суму грн.














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