Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170160) > Сторінка 1251 з 2836
Фото | Назва | Виробник | Інформація |
Доступність |
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STW30N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Pulsed drain current: 96A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 43nC кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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STW31N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.9A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 148mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW32NM50N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 62.5nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW33N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15.5A Pulsed drain current: 96A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 43nC кількість в упаковці: 1 шт |
на замовлення 35 шт: термін постачання 14-21 дні (днів) |
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STW33N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Case: TO247 On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33.4nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW34N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.7A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW34NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 326 шт: термін постачання 14-21 дні (днів) |
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STW34NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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STW35N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW35N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 56.3nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW36N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 102A Power dissipation: 208W Case: TO247 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44.3nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW37N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Pulsed drain current: 112A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 94mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW38N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW38N65M5-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW3N150 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 14-21 дні (днів) |
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STW3N170 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1.6A Pulsed drain current: 10.4A Power dissipation: 0.16W Case: TO247 Gate-source voltage: ±30V On-state resistance: 13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW40N60M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 136A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW40N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247 Type of transistor: N-MOSFET Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 56.5nC Kind of package: tube Polarisation: unipolar Drain current: 20A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±25V On-state resistance: 87mΩ Pulsed drain current: 128A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW40N90K5 | STMicroelectronics |
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на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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STW40N95DK5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW40N95K5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW40NF20 | STMicroelectronics |
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на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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STW42N60M2-EP | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW42N65M5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW43N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW45N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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STW45N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW45N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±20V Drain current: 22A кількість в упаковці: 600 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW45NM50 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247 Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Technology: MDmesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO247 Drain-source voltage: 500V Drain current: 28.4A On-state resistance: 0.1Ω кількість в упаковці: 1 шт |
на замовлення 84 шт: термін постачання 14-21 дні (днів) |
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STW45NM60 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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STW46NF30 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 27A; Idm: 168A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 27A Pulsed drain current: 168A Power dissipation: 300W Case: TO247 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW48N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW48N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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STW48N60M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Version: ESD кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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STW48N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 70nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW48N60M6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 140A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 69mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Version: ESD кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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STW48NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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STW4N150 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Case: TO247 Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT кількість в упаковці: 1 шт |
на замовлення 87 шт: термін постачання 14-21 дні (днів) |
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STW50N65DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW50N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 120A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 91mΩ Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW52NK25Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 32.76A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW56N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ DM2 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW56N60M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW56N60M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW56N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ DM2 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW56N65M2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW56N65M2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW57N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 26.5A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 168A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW57N65M5-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Version: ESD кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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STW58N60DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 200A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW58N65DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 150A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW5NK100Z | STMicroelectronics |
![]() ![]() |
на замовлення 153 шт: термін постачання 14-21 дні (днів) |
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STW63N65DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW65N045M9-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 34A; Idm: 170A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 170A Power dissipation: 312W Case: TO247-4 Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: MDmesh™ M9 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW65N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 140A Power dissipation: 368W Case: TO247 Gate-source voltage: ±25V On-state resistance: 71mΩ Mounting: THT Gate charge: 65.2nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ DM6 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW65N65DM2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW65N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 30A Pulsed drain current: 184A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STW68N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 252A Power dissipation: 390W Case: TO247 Gate-source voltage: ±25V On-state resistance: 41mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 600 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STW68N60M6-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 252A Power dissipation: 390W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STW68N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ DM6 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
STW30N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 790.36 грн |
3+ | 546.83 грн |
6+ | 497.22 грн |
600+ | 477.96 грн |
STW31N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW32NM50N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62.5nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW33N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
кількість в упаковці: 1 шт
на замовлення 35 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 512.75 грн |
4+ | 354.39 грн |
9+ | 322.00 грн |
STW33N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33.4nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW34N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW34NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 326 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 854.58 грн |
4+ | 305.81 грн |
11+ | 277.97 грн |
990+ | 268.79 грн |
STW34NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 439.64 грн |
4+ | 319.14 грн |
10+ | 290.81 грн |
STW35N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW35N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56.3nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56.3nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW36N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44.3nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44.3nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW37N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW38N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW38N65M5-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW3N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 384.31 грн |
4+ | 282.94 грн |
11+ | 257.79 грн |
60+ | 256.87 грн |
120+ | 247.69 грн |
STW3N170 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW40N60M2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW40N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Pulsed drain current: 128A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Pulsed drain current: 128A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW40N90K5 |
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Виробник: STMicroelectronics
STW40N90K5 THT N channel transistors
STW40N90K5 THT N channel transistors
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1124.72 грн |
3+ | 1063.25 грн |
STW40N95DK5 |
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Виробник: STMicroelectronics
STW40N95DK5 THT N channel transistors
STW40N95DK5 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STW40N95K5 |
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Виробник: STMicroelectronics
STW40N95K5 THT N channel transistors
STW40N95K5 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STW40NF20 |
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Виробник: STMicroelectronics
STW40NF20 THT N channel transistors
STW40NF20 THT N channel transistors
на замовлення 18 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 337.88 грн |
5+ | 231.18 грн |
13+ | 218.34 грн |
STW42N60M2-EP |
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Виробник: STMicroelectronics
STW42N60M2-EP THT N channel transistors
STW42N60M2-EP THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STW42N65M5 |
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Виробник: STMicroelectronics
STW42N65M5 THT N channel transistors
STW42N65M5 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
STW43N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW45N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 675.76 грн |
3+ | 412.51 грн |
8+ | 375.21 грн |
120+ | 364.20 грн |
STW45N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW45N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
кількість в упаковці: 600 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
кількість в упаковці: 600 шт
товару немає в наявності
В кошику
од. на суму грн.
STW45NM50 | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 500V
Drain current: 28.4A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 500V
Drain current: 28.4A
On-state resistance: 0.1Ω
кількість в упаковці: 1 шт
на замовлення 84 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 957.33 грн |
3+ | 543.97 грн |
6+ | 494.47 грн |
STW45NM60 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 612.53 грн |
3+ | 491.58 грн |
7+ | 446.77 грн |
120+ | 441.26 грн |
STW46NF30 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 27A; Idm: 168A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 27A
Pulsed drain current: 168A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 27A; Idm: 168A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 27A
Pulsed drain current: 168A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW48N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW48N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 665.88 грн |
3+ | 491.58 грн |
7+ | 446.77 грн |
STW48N60M2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 788.39 грн |
3+ | 489.67 грн |
7+ | 445.85 грн |
120+ | 429.34 грн |
STW48N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 70nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 70nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW48N60M6-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 613.52 грн |
3+ | 467.76 грн |
7+ | 425.67 грн |
120+ | 409.15 грн |
STW48NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 521.64 грн |
4+ | 296.28 грн |
11+ | 269.71 грн |
2010+ | 259.62 грн |
STW4N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 87 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 646.12 грн |
3+ | 432.51 грн |
8+ | 394.48 грн |
25+ | 378.88 грн |
STW50N65DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW50N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW52NK25Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 32.76A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 32.76A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N60M2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW56N65M2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW57N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 168A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 168A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW57N65M5-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1209.26 грн |
2+ | 685.92 грн |
5+ | 624.74 грн |
STW58N60DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW58N65DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW5NK100Z | ![]() |
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Виробник: STMicroelectronics
STW5NK100Z THT N channel transistors
STW5NK100Z THT N channel transistors
на замовлення 153 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 382.34 грн |
9+ | 119.26 грн |
25+ | 112.84 грн |
STW63N65DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW65N045M9-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 34A; Idm: 170A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 170A
Power dissipation: 312W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: MDmesh™ M9
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 34A; Idm: 170A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 170A
Power dissipation: 312W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: MDmesh™ M9
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW65N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM6
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM6
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW65N65DM2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW65N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW68N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 600 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 600 шт
товару немає в наявності
В кошику
од. на суму грн.
STW68N60M6-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
STW68N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM6
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM6
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.