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STGB10NC60KDT4 STMicroelectronics en.CD00058414.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD7NB60ST4 STGD7NB60ST4 STMicroelectronics en.cd00001598.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
на замовлення 2098 шт:
термін постачання 21-30 дні (днів)
3+150.66 грн
5+125.38 грн
10+95.56 грн
26+90.21 грн
Мінімальне замовлення: 3
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NUCLEO-L4R5ZI NUCLEO-L4R5ZI STMicroelectronics NUCLEO-L4R5ZI.pdf Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L4R5ZIT6
Components: STM32L4R5ZIT6
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Type of development kit: STM32
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2134.81 грн
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L6598 STMicroelectronics en.CD00001777.pdf description Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP16; 10÷11.4VDC; 400kHz; 14.6÷16.6V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP16
Mounting: THT
Frequency: 400kHz
Supply voltage: 14.6...16.6V
Operating temperature: -40...125°C
DC supply current: 25mA
Operating voltage: 10...11.4V DC
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STGP20H65DFB2 STMicroelectronics Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGP30H65DFB2 STMicroelectronics stgp30h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGB20H65DFB2 STMicroelectronics stgb20h65dfb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB30H65DFB2 STMicroelectronics stgb30h65dfb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
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STGF20H65DFB2 STMicroelectronics stgf20h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGF30H65DFB2 STMicroelectronics Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGH30H65DFB-2AG STMicroelectronics stgh30h65dfb-2ag.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGWA20H65DFB2 STMicroelectronics stgwa20h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGWA30H65DFB2 STMicroelectronics en.DM00673147.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGWA40H65DFB STMicroelectronics stgwa40h65dfb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA50H65DFB2 STMicroelectronics stgwa50h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
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STGWA60H65DFB STMicroelectronics STGWx60H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFB STMicroelectronics STGx%28x%2980H65DFB_Rev6_May2015.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFBAG STMicroelectronics stgwa80h65dfbag.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT40H65DFB STMicroelectronics STGWT40H65DFB.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT80H65DFB STMicroelectronics en.DM00079449.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA100H65DFB2 STMicroelectronics stgwa100h65dfb2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
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BD238 BD238 STMicroelectronics BD238.pdf BD237-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 25W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO126
Mounting: THT
Frequency: 3MHz
Power: 25W
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2N3055 2N3055 STMicroelectronics 2N3055.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 117W
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STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 80A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
2+242.05 грн
6+152.13 грн
17+143.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF24N65M2 STF24N65M2 STMicroelectronics en.DM00121015.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
3+203.35 грн
8+123.08 грн
20+116.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BD243C BD243C STMicroelectronics BD244C-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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STM8S003F3P6 STM8S003F3P6 STMicroelectronics STM8S003F3-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
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STF10N65K3 STF10N65K3 STMicroelectronics en.CD00235865.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
3+179.48 грн
16+55.81 грн
44+52.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF11N60DM2 STF11N60DM2 STMicroelectronics en.DM00299434.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
4+125.14 грн
10+81.04 грн
13+72.63 грн
34+68.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ULN2074B ULN2074B STMicroelectronics ULN2064B.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Case: DIP16
Output voltage: 50V
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 4
Application: for inductive load
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Mounting: THT
Operating temperature: -20...85°C
на замовлення 355 шт:
термін постачання 21-30 дні (днів)
2+339.20 грн
3+282.86 грн
4+261.46 грн
10+247.69 грн
100+245.40 грн
Мінімальне замовлення: 2
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P0102AL 5AA4 P0102AL 5AA4 STMicroelectronics P0102AL.pdf Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Max. forward impulse current: 7A
на замовлення 7577 шт:
термін постачання 21-30 дні (днів)
15+28.82 грн
16+24.23 грн
19+20.49 грн
25+17.89 грн
61+15.29 грн
165+14.45 грн
250+13.84 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P0102DA 1AA3 P0102DA 1AA3 STMicroelectronics P0102DA.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
на замовлення 2414 шт:
термін постачання 21-30 дні (днів)
13+33.76 грн
19+21.02 грн
25+16.36 грн
50+13.38 грн
100+11.01 грн
175+5.27 грн
478+4.97 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
P0102DA 5AL3 P0102DA 5AL3 STMicroelectronics P0102DA.pdf Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: tape
Max. forward impulse current: 8A
на замовлення 933 шт:
термін постачання 21-30 дні (днів)
17+24.70 грн
26+14.98 грн
31+12.46 грн
100+9.48 грн
109+8.41 грн
299+7.95 грн
Мінімальне замовлення: 17
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STF12N60M2 STMicroelectronics en.DM00187616.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 STMicroelectronics en.DM00085663.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
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STF38N65M5 STMicroelectronics en.DM00113621.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STL24N60DM2 STMicroelectronics en.DM00109425.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 STMicroelectronics en.DM00087524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 STMicroelectronics stl24n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 STMicroelectronics en.DM00152663.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 16.7nC
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STF7N60DM2 STMicroelectronics en.DM00407811.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 STMicroelectronics en.DM00088735.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 STMicroelectronics en.DM00157582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL47N60M6 STMicroelectronics stl47n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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STP80N600K6 STMicroelectronics stp80n600k6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP STMicroelectronics en.DM00286212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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SCT060HU75G3AG STMicroelectronics en.DM00950837.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 750V; 30A; Idm: 132A; 185W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 750V
Drain current: 30A
Pulsed drain current: 132A
Power dissipation: 185W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF7N65M2 STMicroelectronics en.DM00127830.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 STMicroelectronics en.DM00049152.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTH40N120G2V-7 STMicroelectronics scth40n120g2v-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 100A; 238W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCTH40N120G2V7AG STMicroelectronics scth40n120g2v7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCTW40N120G2V STMicroelectronics sctw40n120g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4 STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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STL25N60M2-EP STMicroelectronics en.DM00150214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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STM8L151F3P3 STM8L151F3P3 STMicroelectronics STM8L151C2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; ISO7846; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
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STGB18N40LZT4 STMicroelectronics en.CD00182201.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STPS3L60U STPS3L60U STMicroelectronics STPS3L60U.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.51V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1655 шт:
термін постачання 21-30 дні (днів)
13+33.76 грн
20+19.95 грн
50+15.14 грн
100+13.30 грн
122+7.34 грн
335+6.96 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
STP10N105K5 STMicroelectronics en.DM00134103.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG STMicroelectronics en.DM00333356.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Version: Automotive
Gate charge: 72.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 428A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 107A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
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STGB10NC60KDT4 en.CD00058414.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD7NB60ST4 en.cd00001598.pdf
STGD7NB60ST4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 55W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 55W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
на замовлення 2098 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+150.66 грн
5+125.38 грн
10+95.56 грн
26+90.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NUCLEO-L4R5ZI NUCLEO-L4R5ZI.pdf
NUCLEO-L4R5ZI
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32L4R5ZIT6
Components: STM32L4R5ZIT6
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Type of development kit: STM32
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2134.81 грн
В кошику  од. на суму  грн.
L6598 description en.CD00001777.pdf
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; DIP16; 10÷11.4VDC; 400kHz; 14.6÷16.6V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: DIP16
Mounting: THT
Frequency: 400kHz
Supply voltage: 14.6...16.6V
Operating temperature: -40...125°C
DC supply current: 25mA
Operating voltage: 10...11.4V DC
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STGP20H65DFB2
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGP30H65DFB2 stgp30h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGB20H65DFB2 stgb20h65dfb2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB30H65DFB2 stgb30h65dfb2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
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STGF20H65DFB2 stgf20h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGF30H65DFB2
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 50W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGH30H65DFB-2AG stgh30h65dfb-2ag.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGWA20H65DFB2 stgwa20h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
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STGWA30H65DFB2 en.DM00673147.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
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STGWA40H65DFB stgwa40h65dfb.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA50H65DFB2 stgwa50h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
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STGWA60H65DFB STGWx60H65DFB.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFB STGx%28x%2980H65DFB_Rev6_May2015.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA80H65DFBAG stgwa80h65dfbag.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 535W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 535W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 453nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT40H65DFB STGWT40H65DFB.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWT80H65DFB en.DM00079449.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 470W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 414nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STGWA100H65DFB2 stgwa100h65dfb2.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
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BD238 BD238.pdf BD237-D.PDF
BD238
Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 25W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO126
Mounting: THT
Frequency: 3MHz
Power: 25W
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2N3055 2N3055.pdf
2N3055
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Case: TO3
Mounting: THT
Power: 117W
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STF28N65M2 en.DM00150353.pdf
STF28N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 80A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+242.05 грн
6+152.13 грн
17+143.72 грн
Мінімальне замовлення: 2
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STF24N65M2 en.DM00121015.pdf
STF24N65M2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+203.35 грн
8+123.08 грн
20+116.20 грн
Мінімальне замовлення: 3
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BD243C BD244C-STMicroelectronics.pdf
BD243C
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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STM8S003F3P6 STM8S003F3-DTE.pdf
STM8S003F3P6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
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STF10N65K3 en.CD00235865.pdf
STF10N65K3
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+179.48 грн
16+55.81 грн
44+52.75 грн
Мінімальне замовлення: 3
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STF11N60DM2 en.DM00299434.pdf
STF11N60DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Pulsed drain current: 40A
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.14 грн
10+81.04 грн
13+72.63 грн
34+68.80 грн
Мінімальне замовлення: 4
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ULN2074B ULN2064B.pdf
ULN2074B
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Case: DIP16
Output voltage: 50V
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 4
Application: for inductive load
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Mounting: THT
Operating temperature: -20...85°C
на замовлення 355 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+339.20 грн
3+282.86 грн
4+261.46 грн
10+247.69 грн
100+245.40 грн
Мінімальне замовлення: 2
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P0102AL 5AA4 P0102AL.pdf
P0102AL 5AA4
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 0.2mA
Max. forward impulse current: 7A
на замовлення 7577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.82 грн
16+24.23 грн
19+20.49 грн
25+17.89 грн
61+15.29 грн
165+14.45 грн
250+13.84 грн
Мінімальне замовлення: 15
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P0102DA 1AA3 P0102DA.pdf
P0102DA 1AA3
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
на замовлення 2414 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.76 грн
19+21.02 грн
25+16.36 грн
50+13.38 грн
100+11.01 грн
175+5.27 грн
478+4.97 грн
Мінімальне замовлення: 13
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P0102DA 5AL3 P0102DA.pdf
P0102DA 5AL3
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: tape
Max. forward impulse current: 8A
на замовлення 933 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.70 грн
26+14.98 грн
31+12.46 грн
100+9.48 грн
109+8.41 грн
299+7.95 грн
Мінімальне замовлення: 17
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STF12N60M2 en.DM00187616.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
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STL40N10F7 en.DM00085663.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: reel; tape
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STF38N65M5 en.DM00113621.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STL24N60DM2 en.DM00109425.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M2 en.DM00087524.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL24N60M6 stl24n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF12N65M2 en.DM00152663.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 16.7nC
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STF7N60DM2 en.DM00407811.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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STF7N60M2 en.DM00088735.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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STL7N60M2 en.DM00157582.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL47N60M6 stl47n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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STP80N600K6 stp80n600k6.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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STF11N60M2-EP en.DM00286212.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 12.4nC
Pulsed drain current: 30A
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SCT060HU75G3AG en.DM00950837.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 750V; 30A; Idm: 132A; 185W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 750V
Drain current: 30A
Pulsed drain current: 132A
Power dissipation: 185W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF7N65M2 en.DM00127830.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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STF57N65M5 en.DM00049152.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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SCTH40N120G2V-7 scth40n120g2v-7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 100A; 238W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCTH40N120G2V7AG scth40n120g2v7ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 33A; Idm: 92A; 250W; H2PAK7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCTW40N120G2V sctw40n120g2v.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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SCTWA40N120G2V-4
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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STL25N60M2-EP en.DM00150214.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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STM8L151F3P3 STM8L151C2-DTE.pdf
STM8L151F3P3
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; ISO7846; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
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STGB18N40LZT4 en.CD00182201.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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STPS3L60U STPS3L60U.pdf
STPS3L60U
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.51V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1655 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.76 грн
20+19.95 грн
50+15.14 грн
100+13.30 грн
122+7.34 грн
335+6.96 грн
Мінімальне замовлення: 13
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STP10N105K5 en.DM00134103.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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STL115N10F7AG en.DM00333356.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Mounting: SMD
Version: Automotive
Gate charge: 72.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 428A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 107A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
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