Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25643) > Сторінка 206 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RS1GLHRHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHRUG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHMTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GFSHMXG | Taiwan Semiconductor Corporation |
Description: DIODE, FAST, 1A, 400V |
товару немає в наявності |
Мінімальне замовлення: 28000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHMQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHMHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE STD 400V 800MA SUB SMAQualification: AEC-Q101 Grade: Automotive Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RS1GL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BZV55B43 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 500MW MINI MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FR156G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FR156G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR156G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FR156GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FR156GHR0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FR156GHB0G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1.5A DO204ACPackaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TSH188CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23Part Status: Active Test Condition: 25°C Supplier Device Package: SOT-23 Current - Supply (Max): 5mA Current - Output (Max): 50mA Sensing Range: ±25mT Trip, ±5mT Release Technology: Hall Effect Voltage - Supply: 2.5V ~ 24V Operating Temperature: -40°C ~ 125°C Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Analog Voltage Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TSH188CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23Part Status: Active Test Condition: 25°C Supplier Device Package: SOT-23 Current - Supply (Max): 5mA Current - Output (Max): 50mA Sensing Range: ±25mT Trip, ±5mT Release Technology: Hall Effect Voltage - Supply: 2.5V ~ 24V Operating Temperature: -40°C ~ 125°C Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Analog Voltage Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TSH193CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23Part Status: Active Supplier Device Package: SOT-23 Current - Supply (Max): 5mA Current - Output (Max): 13mA Sensing Range: 2.5mT Trip, 2.5mT Release Technology: Hall Effect Voltage - Supply: 2.5V ~ 16V Operating Temperature: -40°C ~ 125°C Function: Latch Mounting Type: Surface Mount Polarization: North Pole, South Pole Package / Case: TO-236-3, SC-59, SOT-23-3 Test Condition: 25°C Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TSH193CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23Part Status: Active Test Condition: 25°C Supplier Device Package: SOT-23 Current - Output (Max): 13mA Sensing Range: 2.5mT Trip, 2.5mT Release Technology: Hall Effect Voltage - Supply: 2.5V ~ 16V Operating Temperature: -40°C ~ 125°C Function: Latch Mounting Type: Surface Mount Polarization: North Pole, South Pole Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Supply (Max): 5mA |
на замовлення 20594 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BZX55B51 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A R6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103V DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 15A Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5SMC75A R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SS19L | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
SS19L | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A SUB SMAPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
на замовлення 3321 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
S1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
S1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA |
на замовлення 866 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
|
S1BL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A SUB SMA |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
S1BL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A SUB SMA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BZD27C62P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 1W SUB SMAPart Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 47 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W |
на замовлення 7936 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BZD27C62P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 1W SUB SMACurrent - Reverse Leakage @ Vr: 1 µA @ 47 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 8506 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PGSMAJ48A F2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PGSMAJ48A R2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48AHF4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48A F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48AHF2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48A F3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48AHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PGSMAJ48AHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
1.5KE6.8AH | Taiwan Semiconductor Corporation |
Description: TVS 1500W 6.8V 5% UNIDIR DO-201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 150A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FR153GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
S10MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214ABCurrent - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
S10MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
HS2GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
HS2GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 6330 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
HS2KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 800V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| RS1GLHRHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHRUG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL MTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHRVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHMTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL MQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHM2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHRTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1GFSHMXG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 400V
Description: DIODE, FAST, 1A, 400V
товару немає в наявності
Мінімальне замовлення: 28000 шт
В кошику
од. на суму грн.
| RS1GLHMQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHMHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RS1GLHR3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 400V 800MA SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STD 400V 800MA SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| RS1GLHRQG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1GL M2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZV55B43 L1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Description: DIODE ZENER 43V 500MW MINI MELF
товару немає в наявності
В кошику
од. на суму грн.
| FR156G B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| FR156G R0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
Мінімальне замовлення: 7000 шт
В кошику
од. на суму грн.
| FR156G A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| FR156GHA0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| FR156GHR0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
Мінімальне замовлення: 7000 шт
В кошику
од. на суму грн.
| FR156GHB0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TSH188CX RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 58.71 грн |
| 6000+ | 53.00 грн |
| 9000+ | 50.35 грн |
| TSH188CX RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.69 грн |
| 10+ | 105.98 грн |
| 25+ | 84.82 грн |
| 100+ | 72.95 грн |
| 500+ | 61.35 грн |
| 1000+ | 54.72 грн |
| TSH193CX RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Test Condition: 25°C
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Test Condition: 25°C
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.96 грн |
| 6000+ | 27.78 грн |
| 9000+ | 27.21 грн |
| 15000+ | 24.90 грн |
| TSH193CX RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 5mA
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 5mA
на замовлення 20594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.09 грн |
| 7+ | 47.04 грн |
| 10+ | 43.98 грн |
| 25+ | 38.04 грн |
| 50+ | 35.89 грн |
| 100+ | 33.97 грн |
| 500+ | 29.74 грн |
| 1000+ | 28.43 грн |
| BZX55B51 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW DO35
Description: DIODE ZENER 51V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A V7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A V6G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1.5SMC75A R6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A M6G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A R7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75AHM6G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75AH |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 64.1VWM 103V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1.5SMC75AHR7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC75A R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| SS19L |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SS19L |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 3321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.51 грн |
| 16+ | 19.39 грн |
| 50+ | 14.03 грн |
| 100+ | 11.52 грн |
| 500+ | 8.61 грн |
| S1JL R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| S1JL R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
| S1BL R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Description: DIODE GEN PURP 100V 1A SUB SMA
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| S1BL R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| BZD27C62P RVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Description: DIODE ZENER 62V 1W SUB SMA
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
на замовлення 7936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.56 грн |
| 6000+ | 6.98 грн |
| BZD27C62P RVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 62V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 8506 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 15+ | 20.92 грн |
| 100+ | 12.56 грн |
| 500+ | 10.91 грн |
| 1000+ | 7.42 грн |
| PGSMAJ48A F2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48A R2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48AHF4G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48A F4G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48AHF2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48A F3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48AHF3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| PGSMAJ48AHR2G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE6.8AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS 1500W 6.8V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS 1500W 6.8V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FR153GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S10MC V7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S10MC V7G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 60.40 грн |
| 100+ | 46.97 грн |
| HS2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| HS2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 6330 шт:
термін постачання 21-31 дні (днів)
| HS2KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)














