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ES1C R3G ES1C R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 150V 1A DO214AC
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ES1CL MQG ES1CL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL RHG ES1CL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHMTG ES1CLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL M2G ES1CL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHRVG ES1CLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE STANDARD 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
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ES1CL MTG ES1CL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL RQG ES1CL RQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL MHG ES1CL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHMQG ES1CLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CHR3G ES1CHR3G Taiwan Semiconductor Corporation ES1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 150V 1A DO214AC
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ES1CLHRFG ES1CLHRFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHRUG ES1CLHRUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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SMCJ20A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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SMCJ20A M6G SMCJ20A M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
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SMCJ20AHM6G SMCJ20AHM6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
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PGSMAJ16AHF4G PGSMAJ16AHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A E2G PGSMAJ16A E2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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PGSMAJ16AHF2G PGSMAJ16AHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16AHE2G PGSMAJ16AHE2G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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PGSMAJ16A F4G PGSMAJ16A F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A F3G PGSMAJ16A F3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A E3G PGSMAJ16A E3G Taiwan Semiconductor Corporation PGSMAJ%20SERIES_B1805.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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PGSMAJ16AHF3G PGSMAJ16AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A R2G PGSMAJ16A R2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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TSM070NB04CR RLG TSM070NB04CR RLG Taiwan Semiconductor Corporation TSM070NB04CR_B1804.pdf Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.62 грн
Мінімальне замовлення: 2500
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TSM070NB04CR RLG TSM070NB04CR RLG Taiwan Semiconductor Corporation TSM070NB04CR_B1804.pdf Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
4+95.48 грн
10+58.20 грн
100+38.67 грн
500+28.42 грн
1000+25.89 грн
Мінімальне замовлення: 4
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5.0SMDJ24AHM6G 5.0SMDJ24AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ24AHM6G 5.0SMDJ24AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ26AHM6G 5.0SMDJ26AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+153.94 грн
Мінімальне замовлення: 3000
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5.0SMDJ26AHM6G 5.0SMDJ26AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 5953 шт:
термін постачання 21-31 дні (днів)
2+282.58 грн
10+244.61 грн
100+200.42 грн
500+160.12 грн
1000+139.12 грн
Мінімальне замовлення: 2
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TLD8S10AH TLD8S10AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD6S33AH TLD6S33AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
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TLD6S33AH TLD6S33AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+251.01 грн
Мінімальне замовлення: 2
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TLD8S43AH TLD8S43AH Taiwan Semiconductor Corporation pdf.php?pn=TLD8S43AH Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95.1A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD8S43AH TLD8S43AH Taiwan Semiconductor Corporation pdf.php?pn=TLD8S43AH Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95.1A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
2+257.17 грн
10+207.83 грн
100+168.18 грн
Мінімальне замовлення: 2
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TLD6S36AH TLD6S36AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
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TLD6S36AH TLD6S36AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
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TLD6S20AH TLD6S20AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 20VWM 32.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 142A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
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TLD6S20AH TLD6S20AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 20VWM 32.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 142A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
2+234.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ES1CL RTG ES1CL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHMHG ES1CLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
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BSS138 RFG BSS138 RFG Taiwan Semiconductor Corporation BSS138_A2007.pdf Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+4.46 грн
6000+3.87 грн
9000+3.65 грн
15000+3.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS138 RFG BSS138 RFG Taiwan Semiconductor Corporation BSS138_A2007.pdf Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 15376 шт:
термін постачання 21-31 дні (днів)
15+21.56 грн
24+12.53 грн
100+7.84 грн
500+5.44 грн
1000+4.82 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SR302 SR302 Taiwan Semiconductor Corporation SR302 SERIES_J2105.pdf Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SR302H SR302H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SMA4S24AH SMA4S24AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 24VWM 39VC SOD128
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SMA4S24AH SMA4S24AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 24VWM 39VC SOD128
на замовлення 3430 шт:
термін постачання 21-31 дні (днів)
8+38.50 грн
10+29.81 грн
100+20.29 грн
500+14.28 грн
1000+10.71 грн
2000+9.82 грн
Мінімальне замовлення: 8
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TSM3401CX RFG TSM3401CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
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TSM3401CX RFG TSM3401CX RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
5+70.07 грн
10+42.19 грн
100+27.58 грн
Мінімальне замовлення: 5
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BZX79C2V0 A0G BZX79C2V0 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 2V 500MW DO35
товару немає в наявності
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TSZU52C2V0 RGG TSZU52C2V0 RGG Taiwan Semiconductor Corporation TSZU52C2V0 SERIES_G2009.pdf Description: DIODE ZENER 2V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BAT42 A0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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BAT42-L0 R0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 R0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 A0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 A0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 R0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 A0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 R0 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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ES1C R3G ES1A%20SERIES_O2112.pdf
ES1C R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
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ES1CL MQG ES1AL%20SERIES_L2103.pdf
ES1CL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL RHG ES1AL%20SERIES_L2103.pdf
ES1CL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHMTG ES1AL%20SERIES_L2103.pdf
ES1CLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL M2G ES1AL%20SERIES_L2103.pdf
ES1CL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHRVG ES1AL%20SERIES_L2103.pdf
ES1CLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
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ES1CL MTG ES1AL%20SERIES_L2103.pdf
ES1CL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL RQG ES1AL%20SERIES_L2103.pdf
ES1CL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CL MHG ES1AL%20SERIES_L2103.pdf
ES1CL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CLHMQG ES1AL%20SERIES_L2103.pdf
ES1CLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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ES1CHR3G ES1A%20SERIES_N2102.pdf
ES1CHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
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ES1CLHRFG ES1AL%20SERIES_L2103.pdf
ES1CLHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
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ES1CLHRUG ES1AL%20SERIES_L2103.pdf
ES1CLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
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SMCJ20A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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SMCJ20A M6G SMCJ SERIES_R2004.pdf
SMCJ20A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
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SMCJ20AHM6G SMCJ SERIES_R2004.pdf
SMCJ20AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
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PGSMAJ16AHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16AHF4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A E2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ16A E2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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PGSMAJ16AHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16AHF2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16AHE2G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ16AHE2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
товару немає в наявності
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PGSMAJ16A F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16A F4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A F3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16A F3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A E3G PGSMAJ%20SERIES_B1805.pdf
PGSMAJ16A E3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
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PGSMAJ16AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16AHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ16A R2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ16A R2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 16VWM 26VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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TSM070NB04CR RLG TSM070NB04CR_B1804.pdf
TSM070NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.62 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM070NB04CR RLG TSM070NB04CR_B1804.pdf
TSM070NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.48 грн
10+58.20 грн
100+38.67 грн
500+28.42 грн
1000+25.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
5.0SMDJ24AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ24AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ24AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ24AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ26AHM6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ26AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+153.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
5.0SMDJ26AHM6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ26AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 5953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.58 грн
10+244.61 грн
100+200.42 грн
500+160.12 грн
1000+139.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLD8S10AH TLD8S10AH SERIES_E2310.pdf
TLD8S10AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD6S33AH TLD6S10AH SERIES_D2103.pdf
TLD6S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
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TLD6S33AH TLD6S10AH SERIES_D2103.pdf
TLD6S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLD8S43AH pdf.php?pn=TLD8S43AH
TLD8S43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95.1A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD8S43AH pdf.php?pn=TLD8S43AH
TLD8S43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95.1A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+257.17 грн
10+207.83 грн
100+168.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLD6S36AH TLD6S10AH SERIES_D2103.pdf
TLD6S36AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO218AB
товару немає в наявності
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TLD6S36AH TLD6S10AH SERIES_D2103.pdf
TLD6S36AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
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TLD6S20AH TLD6S10AH SERIES_D2103.pdf
TLD6S20AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 142A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
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TLD6S20AH TLD6S10AH SERIES_D2103.pdf
TLD6S20AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 142A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ES1CL RTG ES1AL%20SERIES_L2103.pdf
ES1CL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
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ES1CLHMHG ES1AL%20SERIES_L2103.pdf
ES1CLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
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BSS138 RFG BSS138_A2007.pdf
BSS138 RFG
Виробник: Taiwan Semiconductor Corporation
Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.46 грн
6000+3.87 грн
9000+3.65 грн
15000+3.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS138 RFG BSS138_A2007.pdf
BSS138 RFG
Виробник: Taiwan Semiconductor Corporation
Description: 50V, 0.26A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V
Power Dissipation (Max): 357mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 15376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.56 грн
24+12.53 грн
100+7.84 грн
500+5.44 грн
1000+4.82 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SR302 SR302 SERIES_J2105.pdf
SR302
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
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SR302H
SR302H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
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SMA4S24AH SMA4S12AH SERIES_C2103.pdf
SMA4S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 39VC SOD128
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SMA4S24AH SMA4S12AH SERIES_C2103.pdf
SMA4S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 39VC SOD128
на замовлення 3430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+38.50 грн
10+29.81 грн
100+20.29 грн
500+14.28 грн
1000+10.71 грн
2000+9.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TSM3401CX RFG
TSM3401CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
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TSM3401CX RFG
TSM3401CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551.57 pF @ 15 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.07 грн
10+42.19 грн
100+27.58 грн
Мінімальне замовлення: 5
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BZX79C2V0 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C2V0 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2V 500MW DO35
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TSZU52C2V0 RGG TSZU52C2V0 SERIES_G2009.pdf
TSZU52C2V0 RGG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BAT42 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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BAT42-L0 R0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 A0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42-L0 A0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT42 R0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
товару немає в наявності
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