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SMF45A RVG SMF45A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 45VWM 72.7VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 11910 шт:
термін постачання 21-31 дні (днів)
8+46.37 грн
12+27.51 грн
100+17.57 грн
500+12.45 грн
1000+11.15 грн
Мінімальне замовлення: 8
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RS1JL M2G RS1JL M2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RUG RS1JL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHMTG RS1JLHMTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JFS MXG RS1JFS MXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 600V
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RS1JLHRVG RS1JLHRVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RFG RS1JL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHM2G RS1JLHM2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1J M2G RS1J M2G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
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RS1JHR3G RS1JHR3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRFG RS1JLHRFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RQG RS1JL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRHG RS1JLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRQG RS1JLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1GL MHG RS1GL MHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRHG RS1GLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRUG RS1GLHRUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL MTG RS1GL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRVG RS1GLHRVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHMTG RS1GLHMTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL MQG RS1GL MQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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RS1GLHM2G RS1GLHM2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRTG RS1GLHRTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GFSHMXG RS1GFSHMXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 400V
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RS1GLHMQG RS1GLHMQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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RS1GLHMHG RS1GLHMHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHR3G RS1GLHR3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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RS1GLHRQG RS1GLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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RS1GL M2G RS1GL M2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZV55B43 L1G BZV55B43 L1G Taiwan Semiconductor Corporation BZV55B2V4%20Series_F1804.pdf Description: DIODE ZENER 43V 500MW MINI MELF
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FR156G B0G FR156G B0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156G R0G FR156G R0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156G A0G FR156G A0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHA0G FR156GHA0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHR0G FR156GHR0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHB0G FR156GHB0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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TSH188CX RFG TSH188CX RFG Taiwan Semiconductor Corporation TSH188_C13.pdf Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+61.31 грн
6000+55.35 грн
9000+52.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSH188CX RFG TSH188CX RFG Taiwan Semiconductor Corporation TSH188_C13.pdf Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3+153.19 грн
10+110.68 грн
25+88.57 грн
100+76.19 грн
500+64.07 грн
1000+57.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSH193CX RFG TSH193CX RFG Taiwan Semiconductor Corporation TSH193_B1608.pdf Description: MAGNETIC SWITCH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+31.29 грн
6000+29.01 грн
9000+28.41 грн
15000+26.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSH193CX RFG TSH193CX RFG Taiwan Semiconductor Corporation TSH193_B1608.pdf Description: MAGNETIC SWITCH SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 20594 шт:
термін постачання 21-31 дні (днів)
6+59.62 грн
7+49.12 грн
10+45.93 грн
25+39.72 грн
50+37.48 грн
100+35.47 грн
500+31.06 грн
1000+29.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BZX55B51 A0G BZX55B51 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 51V 500MW DO35
товару немає в наявності
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1.5SMC75A V7G 1.5SMC75A V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A V6G 1.5SMC75A V6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R6G 1.5SMC75A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6G 1.5SMC75A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R7G 1.5SMC75A R7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R7 1.5SMC75A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6 1.5SMC75A M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75AHM6G 1.5SMC75AHM6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75AH 1.5SMC75AH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: TVS DIODE 64.1VWM 103V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC75AHR7G 1.5SMC75AHR7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R6 1.5SMC75A R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
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SS19L SS19L Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+6.06 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS19L SS19L Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 11106 шт:
термін постачання 21-31 дні (днів)
11+31.47 грн
15+21.61 грн
100+10.91 грн
500+9.08 грн
1000+7.06 грн
2000+6.32 грн
5000+6.08 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
S1JL R3G S1JL R3G Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
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S1JL R3G S1JL R3G Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
S1BL R3G S1BL R3G Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
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S1BL R3G S1BL R3G Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BZD27C62P RVG BZD27C62P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 7936 шт:
термін постачання 21-31 дні (днів)
3000+7.89 грн
6000+7.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C62P RVG BZD27C62P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 8506 шт:
термін постачання 21-31 дні (днів)
12+28.98 грн
15+21.85 грн
100+13.12 грн
500+11.39 грн
1000+7.75 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMF45A RVG SMF5.0A%20SERIES_D2103.pdf
SMF45A RVG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 11910 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.37 грн
12+27.51 грн
100+17.57 грн
500+12.45 грн
1000+11.15 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
RS1JL M2G RS1AL%20SERIES_N2103.pdf
RS1JL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RUG RS1AL%20SERIES_N2103.pdf
RS1JL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHMTG RS1AL%20SERIES_N2103.pdf
RS1JLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JFS MXG RS1xFS_DS.pdf
RS1JFS MXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 600V
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RS1JLHRVG RS1AL%20SERIES_N2103.pdf
RS1JLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RFG RS1AL%20SERIES_N2103.pdf
RS1JL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHM2G RS1AL%20SERIES_N2103.pdf
RS1JLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1J M2G RS1A%20SERIES_L2102.pdf
RS1J M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
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RS1JHR3G RS1A%20SERIES_L2102.pdf
RS1JHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRFG RS1AL%20SERIES_N2103.pdf
RS1JLHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RQG RS1AL%20SERIES_N2103.pdf
RS1JL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRHG RS1AL%20SERIES_N2103.pdf
RS1JLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JLHRQG RS1AL%20SERIES_N2103.pdf
RS1JLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1GL MHG RS1AL%20SERIES_N2103.pdf
RS1GL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRHG RS1AL%20SERIES_N2103.pdf
RS1GLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GLHRUG RS1AL%20SERIES_N2103.pdf
RS1GLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GL MTG RS1AL%20SERIES_N2103.pdf
RS1GL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GLHRVG RS1AL%20SERIES_N2103.pdf
RS1GLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GLHMTG RS1AL%20SERIES_N2103.pdf
RS1GLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GL MQG RS1AL%20SERIES_N2103.pdf
RS1GL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
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RS1GLHM2G RS1AL%20SERIES_N2103.pdf
RS1GLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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RS1GLHRTG RS1AL%20SERIES_N2103.pdf
RS1GLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GFSHMXG RS1xFS_DS.pdf
RS1GFSHMXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 400V
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RS1GLHMQG RS1AL%20SERIES_N2103.pdf
RS1GLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RS1GLHMHG RS1AL%20SERIES_N2103.pdf
RS1GLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHR3G RS1AL%20SERIES_N2103.pdf
RS1GLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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RS1GLHRQG RS1AL%20SERIES_N2103.pdf
RS1GLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
товару немає в наявності
В кошику  од. на суму  грн.
RS1GL M2G RS1AL%20SERIES_N2103.pdf
RS1GL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZV55B43 L1G BZV55B2V4%20Series_F1804.pdf
BZV55B43 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
товару немає в наявності
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FR156G B0G FR151G%20SERIES_I2105.pdf
FR156G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
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FR156G R0G FR151G%20SERIES_I2105.pdf
FR156G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
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FR156G A0G FR151G%20SERIES_I2105.pdf
FR156G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
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FR156GHA0G FR151G%20SERIES_I2105.pdf
FR156GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
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FR156GHR0G FR151G%20SERIES_I2105.pdf
FR156GHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
товару немає в наявності
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FR156GHB0G FR151G%20SERIES_I2105.pdf
FR156GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
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TSH188CX RFG TSH188_C13.pdf
TSH188CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+61.31 грн
6000+55.35 грн
9000+52.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSH188CX RFG TSH188_C13.pdf
TSH188CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.19 грн
10+110.68 грн
25+88.57 грн
100+76.19 грн
500+64.07 грн
1000+57.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSH193CX RFG TSH193_B1608.pdf
TSH193CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+31.29 грн
6000+29.01 грн
9000+28.41 грн
15000+26.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSH193CX RFG TSH193_B1608.pdf
TSH193CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 20594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.62 грн
7+49.12 грн
10+45.93 грн
25+39.72 грн
50+37.48 грн
100+35.47 грн
500+31.06 грн
1000+29.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BZX55B51 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B51 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC75A V7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC75A V6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R6G
1.5SMC75A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC75A M6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R7
1.5SMC75A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
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1.5SMC75A M6
1.5SMC75A M6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75AHM6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75AH 1.5SMCH SERIES_B2207.pdf
1.5SMC75AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC75AHR7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
товару немає в наявності
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1.5SMC75A R6
1.5SMC75A R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику  од. на суму  грн.
SS19L
SS19L
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.06 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS19L
SS19L
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 11106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.47 грн
15+21.61 грн
100+10.91 грн
500+9.08 грн
1000+7.06 грн
2000+6.32 грн
5000+6.08 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
S1JL R3G S1xL_Rev.O15.pdf
S1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
S1JL R3G S1xL_Rev.O15.pdf
S1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
S1BL R3G S1AL%20SERIES_Q2108.pdf
S1BL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
S1BL R3G S1AL%20SERIES_Q2108.pdf
S1BL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BZD27C62P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C62P RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 7936 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.89 грн
6000+7.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C62P RVG BZD27C%20SERIES_AB2103.pdf
BZD27C62P RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 8506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.98 грн
15+21.85 грн
100+13.12 грн
500+11.39 грн
1000+7.75 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
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