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PGSMAJ58AHF2G PGSMAJ58AHF2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58A R2G PGSMAJ58A R2G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58AHF3G PGSMAJ58AHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58A F4G PGSMAJ58A F4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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6A10GHR0G 6A10GHR0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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6A10GHB0G 6A10GHB0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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6A10GHA0G 6A10GHA0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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6A10G A0G 6A10G A0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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6A10G B0G 6A10G B0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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P6KE9.1AH P6KE9.1AH Taiwan Semiconductor Corporation Description: TVS 600W 9.1V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SMA4S30AH SMA4S30AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 30VWM 48.7VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.5V
Voltage - Clamping (Max) @ Ipp: 48.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX79B6V8 A0G BZX79B6V8 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_E2103.pdf Description: DIODE ZENER 6.8V 500MW DO35
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PU1BLWH PU1BLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 100V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU1BLWH PU1BLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 100V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 19790 шт:
термін постачання 21-31 дні (днів)
14+24.01 грн
21+15.55 грн
100+10.48 грн
500+7.59 грн
1000+6.84 грн
2000+6.20 грн
5000+5.40 грн
Мінімальне замовлення: 14
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PU3BAH PU3BAH Taiwan Semiconductor Corporation PU3BAH SERIES_B2109.pdf Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+9.00 грн
Мінімальне замовлення: 7500
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PU3BAH PU3BAH Taiwan Semiconductor Corporation PU3BAH SERIES_B2109.pdf Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 13679 шт:
термін постачання 21-31 дні (днів)
8+44.71 грн
13+26.39 грн
100+16.88 грн
500+11.99 грн
1000+10.25 грн
2000+9.70 грн
Мінімальне замовлення: 8
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PU2DLWH PU2DLWH Taiwan Semiconductor Corporation PU2BLWH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+5.49 грн
20000+5.29 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PU2DLWH PU2DLWH Taiwan Semiconductor Corporation PU2BLWH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 23840 шт:
термін постачання 21-31 дні (днів)
13+25.67 грн
17+19.22 грн
100+13.55 грн
500+9.54 грн
1000+7.38 грн
2000+7.17 грн
5000+6.61 грн
Мінімальне замовлення: 13
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PU4BCH PU4BCH Taiwan Semiconductor Corporation PU4BCH%20SERIES_C2110.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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PU4BCH PU4BCH Taiwan Semiconductor Corporation PU4BCH%20SERIES_C2110.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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PU1BLSH PU1BLSH Taiwan Semiconductor Corporation PU1BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+6.41 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PU1BLSH PU1BLSH Taiwan Semiconductor Corporation PU1BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 16821 шт:
термін постачання 21-31 дні (днів)
10+35.61 грн
15+21.37 грн
100+11.28 грн
500+9.23 грн
1000+8.25 грн
2000+7.63 грн
5000+6.58 грн
Мінімальне замовлення: 10
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PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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PU4DCH PU4DCH Taiwan Semiconductor Corporation PU4BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.34 грн
Мінімальне замовлення: 3000
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PU4DCH PU4DCH Taiwan Semiconductor Corporation PU4BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 5242 шт:
термін постачання 21-31 дні (днів)
8+47.20 грн
10+38.83 грн
100+26.98 грн
500+19.77 грн
1000+16.07 грн
Мінімальне замовлення: 8
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PUUP3BH PUUP3BH Taiwan Semiconductor Corporation PUUP3BH%20SERIES_B2109.pdf Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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PUUP3BH PUUP3BH Taiwan Semiconductor Corporation PUUP3BH%20SERIES_B2109.pdf Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
6+61.28 грн
10+51.75 грн
100+39.65 грн
500+29.41 грн
1000+23.53 грн
2000+21.42 грн
Мінімальне замовлення: 6
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PUUP4BH PUUP4BH Taiwan Semiconductor Corporation PUUP4BH%20SERIES_B2109.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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PUUP4BH PUUP4BH Taiwan Semiconductor Corporation PUUP4BH%20SERIES_B2109.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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PU1BMH M3G PU1BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 1A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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PU1BMH M3G PU1BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 1A, 100V, ULTRA FAST RECOV
на замовлення 4760 шт:
термін постачання 21-31 дні (днів)
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PUUP8DH PUUP8DH Taiwan Semiconductor Corporation PUUP8BH SERIES_A2111.pdf Description: DIODE GEN PURP 200V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+19.53 грн
Мінімальне замовлення: 6000
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PUUP8DH PUUP8DH Taiwan Semiconductor Corporation PUUP8BH SERIES_A2111.pdf Description: DIODE GEN PURP 200V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 17105 шт:
термін постачання 21-31 дні (днів)
4+91.09 грн
10+54.78 грн
100+35.93 грн
500+26.14 грн
1000+23.70 грн
2000+21.64 грн
Мінімальне замовлення: 4
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PU1DLWH PU1DLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DLWH PU1DLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 17495 шт:
термін постачання 21-31 дні (днів)
14+24.01 грн
21+15.55 грн
100+10.48 грн
500+7.59 грн
1000+6.84 грн
2000+6.20 грн
5000+5.40 грн
Мінімальне замовлення: 14
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PU3DAH PU3DAH Taiwan Semiconductor Corporation PU3BAH%20SERIES_B2109.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
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PU3DAH PU3DAH Taiwan Semiconductor Corporation PU3BAH%20SERIES_B2109.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
на замовлення 22424 шт:
термін постачання 21-31 дні (днів)
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PUUP6BH PUUP6BH Taiwan Semiconductor Corporation PUUP6BH%20SERIES_C2109.pdf Description: DIODE GEN PURP 100V 6A TO277A
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PUUP6BH PUUP6BH Taiwan Semiconductor Corporation PUUP6BH%20SERIES_C2109.pdf Description: DIODE GEN PURP 100V 6A TO277A
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
4+91.09 грн
10+78.30 грн
100+61.02 грн
500+47.31 грн
1000+37.35 грн
2000+34.90 грн
Мінімальне замовлення: 4
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PU2BMH M3G PU2BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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PU2BMH M3G PU2BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
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PU1DMH M3G PU1DMH M3G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PU1DMH M3G PU1DMH M3G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5720 шт:
термін постачання 21-31 дні (днів)
9+38.92 грн
10+32.13 грн
100+24.01 грн
500+17.70 грн
1000+13.68 грн
Мінімальне замовлення: 9
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TSF10H100C C0G TSF10H100C C0G Taiwan Semiconductor Corporation TSF10H100C-TSF10H200C_I2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)
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MBR10H100CT C0G MBR10H100CT C0G Taiwan Semiconductor Corporation MBR10H100CT%20SERIES_J2104.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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TST10H100CW C0G TST10H100CW C0G Taiwan Semiconductor Corporation TST10H100CW-TST10H200CW_B2104.pdf Description: DIODE SCHOTTKY 100V 5A TO220AB
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P6KE6.8AH P6KE6.8AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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HER152G HER152G Taiwan Semiconductor Corporation pdf.php?pn=HER152G Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER151G HER151G Taiwan Semiconductor Corporation pdf.php?pn=HER151G Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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HER153G HER153G Taiwan Semiconductor Corporation pdf.php?pn=HER153G Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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TLD6S10AH TLD6S10AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S10AH TLD5S10AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ES2DFS ES2DFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DFS ES2DFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2DAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2DAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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SMBJ85AH SMBJ85AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SRAS2060 MNG SRAS2060 MNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 60V 20A TO263AB
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SRAS2060HMNG SRAS2060HMNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 60V 20A TO263AB
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PGSMAJ58AHF2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58AHF2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58A R2G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58A R2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58AHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58AHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
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PGSMAJ58A F4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ58A F4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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6A10GHR0G 6A05G%20SERIES_F2104.pdf
6A10GHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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6A10GHB0G 6A05G%20SERIES_F2104.pdf
6A10GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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6A10GHA0G 6A05G%20SERIES_F2104.pdf
6A10GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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6A10G A0G
6A10G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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6A10G B0G 6A05G%20SERIES_F2104.pdf
6A10G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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P6KE9.1AH
P6KE9.1AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS 600W 9.1V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMA4S30AH SMA4S12AH SERIES_C2103.pdf
SMA4S30AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.7VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.5V
Voltage - Clamping (Max) @ Ipp: 48.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX79B6V8 A0G BZX79B2V4%20SERIES_E2103.pdf
BZX79B6V8 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
PU1BLWH PU1BLWH SERIES_A2109.pdf
PU1BLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PU1BLWH PU1BLWH SERIES_A2109.pdf
PU1BLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 19790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.01 грн
21+15.55 грн
100+10.48 грн
500+7.59 грн
1000+6.84 грн
2000+6.20 грн
5000+5.40 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PU3BAH PU3BAH SERIES_B2109.pdf
PU3BAH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+9.00 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
PU3BAH PU3BAH SERIES_B2109.pdf
PU3BAH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 13679 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.71 грн
13+26.39 грн
100+16.88 грн
500+11.99 грн
1000+10.25 грн
2000+9.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
PU2DLWH PU2BLWH SERIES_B2109.pdf
PU2DLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+5.49 грн
20000+5.29 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PU2DLWH PU2BLWH SERIES_B2109.pdf
PU2DLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 23840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.67 грн
17+19.22 грн
100+13.55 грн
500+9.54 грн
1000+7.38 грн
2000+7.17 грн
5000+6.61 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PU4BCH PU4BCH%20SERIES_C2110.pdf
PU4BCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PU4BCH PU4BCH%20SERIES_C2110.pdf
PU4BCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PU1BLSH PU1BLSH SERIES_B2109.pdf
PU1BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.41 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
PU1BLSH PU1BLSH SERIES_B2109.pdf
PU1BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 16821 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.61 грн
15+21.37 грн
100+11.28 грн
500+9.23 грн
1000+8.25 грн
2000+7.63 грн
5000+6.58 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
PU2DLSH PU2BLSH SERIES_B2109.pdf
PU2DLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PU2DLSH PU2BLSH SERIES_B2109.pdf
PU2DLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PU4DCH PU4BCH SERIES_C2110.pdf
PU4DCH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PU4DCH PU4BCH SERIES_C2110.pdf
PU4DCH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 5242 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.20 грн
10+38.83 грн
100+26.98 грн
500+19.77 грн
1000+16.07 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
PUUP3BH PUUP3BH%20SERIES_B2109.pdf
PUUP3BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
PUUP3BH PUUP3BH%20SERIES_B2109.pdf
PUUP3BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.28 грн
10+51.75 грн
100+39.65 грн
500+29.41 грн
1000+23.53 грн
2000+21.42 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PUUP4BH PUUP4BH%20SERIES_B2109.pdf
PUUP4BH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PUUP4BH PUUP4BH%20SERIES_B2109.pdf
PUUP4BH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PU1BMH M3G
PU1BMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PU1BMH M3G
PU1BMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
на замовлення 4760 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
PUUP8DH PUUP8BH SERIES_A2111.pdf
PUUP8DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+19.53 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
PUUP8DH PUUP8BH SERIES_A2111.pdf
PUUP8DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 17105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.09 грн
10+54.78 грн
100+35.93 грн
500+26.14 грн
1000+23.70 грн
2000+21.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PU1DLWH PU1BLWH SERIES_A2109.pdf
PU1DLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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PU1DLWH PU1BLWH SERIES_A2109.pdf
PU1DLWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 17495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.01 грн
21+15.55 грн
100+10.48 грн
500+7.59 грн
1000+6.84 грн
2000+6.20 грн
5000+5.40 грн
Мінімальне замовлення: 14
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PU3DAH PU3BAH%20SERIES_B2109.pdf
PU3DAH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
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PU3DAH PU3BAH%20SERIES_B2109.pdf
PU3DAH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
на замовлення 22424 шт:
термін постачання 21-31 дні (днів)
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PUUP6BH PUUP6BH%20SERIES_C2109.pdf
PUUP6BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
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PUUP6BH PUUP6BH%20SERIES_C2109.pdf
PUUP6BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.09 грн
10+78.30 грн
100+61.02 грн
500+47.31 грн
1000+37.35 грн
2000+34.90 грн
Мінімальне замовлення: 4
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PU2BMH M3G
PU2BMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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PU2BMH M3G
PU2BMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
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PU1DMH M3G
PU1DMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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PU1DMH M3G
PU1DMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.92 грн
10+32.13 грн
100+24.01 грн
500+17.70 грн
1000+13.68 грн
Мінімальне замовлення: 9
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TSF10H100C C0G TSF10H100C-TSF10H200C_I2105.pdf
TSF10H100C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)
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MBR10H100CT C0G MBR10H100CT%20SERIES_J2104.pdf
MBR10H100CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
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TST10H100CW C0G TST10H100CW-TST10H200CW_B2104.pdf
TST10H100CW C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A TO220AB
товару немає в наявності
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P6KE6.8AH P6KE SERIES_P2203.pdf
P6KE6.8AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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HER152G pdf.php?pn=HER152G
HER152G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER151G pdf.php?pn=HER151G
HER151G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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HER153G pdf.php?pn=HER153G
HER153G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
TLD6S10AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
TLD5S10AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ES2DFS ES2BFS SERIES_D2103.pdf
ES2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DFS ES2BFS SERIES_D2103.pdf
ES2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2BAL SERIES_D2103.pdf
ES2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2BAL SERIES_D2103.pdf
ES2DAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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SMBJ85AH SMBJH SERIES_A2102.pdf
SMBJ85AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SRAS2060 MNG SRAS2020%20SERIES_M2103.pdf
SRAS2060 MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
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SRAS2060HMNG SRAS2020%20SERIES_M2103.pdf
SRAS2060HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
товару немає в наявності
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