Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25196) > Сторінка 211 з 420
| Фото | Назва | Виробник | Інформація |
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PUUP6BH | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 100V 6A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PUUP6BH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 6A TO277A |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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PU2BMH M3G | Taiwan Semiconductor Corporation | Description: 25NS, 2A, 100V, ULTRA FAST RECOV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PU2BMH M3G | Taiwan Semiconductor Corporation | Description: 25NS, 2A, 100V, ULTRA FAST RECOV |
на замовлення 5999 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PU1DMH M3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MICRO SMA Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PU1DMH M3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MICRO SMA Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 5720 шт: термін постачання 21-31 дні (днів) |
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TSF10H100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MBR10H100CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TST10H100CW C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 5A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE6.8AH | Taiwan Semiconductor Corporation |
Description: TVS 600W 6.8V DO-15 Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 60A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HER152G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HER151G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HER153G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLD6S10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 271A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 3600W (3.6kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLD5S10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 212A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 2800W (2.8kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2DFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2DFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2DAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2DAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
,-TO-263AB.jpg "SRAS2060 MNG") |
SRAS2060 MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 20A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRAS2060HMNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 20A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRS1635HMNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 35V 16A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 500 µA @ 35 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TQM300NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TQM300NB06DCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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GBL205 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 2A GBL Packaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFAS806G MNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFAS806GHMNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX79B6V2 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 500MW DO35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRS1635 MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 35V 16A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1PGSMB5933 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 3W DO214AA Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 17.5 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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ES1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 27648 шт: термін постачання 21-31 дні (днів) |
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ES1JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 13990 шт: термін постачання 21-31 дні (днів) |
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ES1CL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ78A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ78A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ78AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ78AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ78AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5392GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5392G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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ES2JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 40250 шт: термін постачання 21-31 дні (днів) |
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ES2JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GP1006 C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 800V 10A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GP1006HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 800V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1MAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1MAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS315 R7 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS315 M6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS315 R6G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SS315 R6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS315H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU2507 | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 25A 1000V GBU Packaging: Tube Package / Case: 4-ESIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 738 шт: термін постачання 21-31 дні (днів) |
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GBU2506 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 25A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1522 шт: термін постачання 21-31 дні (днів) |
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SMCJ110A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 110VWM 177VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
| PUUP6BH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
Description: DIODE GEN PURP 100V 6A TO277A
товару немає в наявності
В кошику
од. на суму грн.
| PUUP6BH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
Description: DIODE GEN PURP 100V 6A TO277A
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.34 грн |
| 10+ | 81.10 грн |
| 100+ | 63.20 грн |
| 500+ | 49.00 грн |
| 1000+ | 38.68 грн |
| 2000+ | 36.15 грн |
| PU2BMH M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PU2BMH M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PU1DMH M3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| PU1DMH M3G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5720 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 10+ | 33.28 грн |
| 100+ | 24.87 грн |
| 500+ | 18.33 грн |
| 1000+ | 14.17 грн |
| TSF10H100C C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MBR10H100CT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
товару немає в наявності
В кошику
од. на суму грн.
| TST10H100CW C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A TO220AB
Description: DIODE SCHOTTKY 100V 5A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| P6KE6.8AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| HER152G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| HER151G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| HER153G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| TLD6S10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLD5S10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ES2DFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| ES2DFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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| ES2DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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| ES2DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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В кошику
од. на суму грн.
| SRAS2060 MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
Description: DIODE SCHOTTKY 60V 20A TO263AB
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В кошику
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| SRAS2060HMNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
Description: DIODE SCHOTTKY 60V 20A TO263AB
товару немає в наявності
В кошику
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| MBRS1635HMNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| TQM300NB06DCR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 40.72 грн |
| 5000+ | 37.35 грн |
| TQM300NB06DCR RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 77.55 грн |
| 100+ | 60.33 грн |
| 500+ | 47.99 грн |
| 1000+ | 39.10 грн |
| GBL205 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| SFAS806G MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Description: DIODE GEN PURP 400V 8A TO263AB
товару немає в наявності
В кошику
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| SFAS806GHMNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Description: DIODE GEN PURP 400V 8A TO263AB
товару немає в наявності
В кошику
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| BZX79B6V2 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Description: DIODE ZENER 6.2V 500MW DO35
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В кошику
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| RS1GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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В кошику
од. на суму грн.
| RS1GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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В кошику
од. на суму грн.
| MBRS1635 MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
Description: DIODE SCHOTTKY 35V 16A TO263AB
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В кошику
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| 1PGSMB5933 R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
Description: DIODE ZENER 22V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
товару немає в наявності
В кошику
од. на суму грн.
| ES1JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14000+ | 6.19 грн |
| ES1JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 27648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.16 грн |
| 17+ | 20.48 грн |
| 100+ | 12.97 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.13 грн |
| 2000+ | 7.29 грн |
| 5000+ | 6.29 грн |
| ES1JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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од. на суму грн.
| ES1JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.16 грн |
| 17+ | 20.48 грн |
| 100+ | 12.97 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.13 грн |
| 2000+ | 7.29 грн |
| 5000+ | 6.29 грн |
| ES1CL RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ78A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
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од. на суму грн.
| SMBJ78A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
товару немає в наявності
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од. на суму грн.
| SMBJ78AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMBJ78AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
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| SMBJ78AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1N5392GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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| 1N5392G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| ES2JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14000+ | 7.49 грн |
| 28000+ | 6.55 грн |
| ES2JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 40250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.73 грн |
| 14+ | 23.79 грн |
| 100+ | 15.98 грн |
| 500+ | 11.31 грн |
| 1000+ | 9.18 грн |
| 2000+ | 8.85 грн |
| 5000+ | 7.90 грн |
| ES2JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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| ES2JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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| GP1006 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
Description: DIODE ARRAY GP 800V 10A TO220AB
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| GP1006HC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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| RS1MAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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| RS1MAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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| SS315 R7 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
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| SS315 M6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
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| SS315 R6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
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| SS315 R6 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
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| SS315H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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| GBU2507 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 25A 1000V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE BRIDGE 25A 1000V GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 738 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.07 грн |
| 20+ | 89.69 грн |
| 100+ | 69.77 грн |
| 500+ | 55.50 грн |
| GBU2506 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1522 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.66 грн |
| 10+ | 90.19 грн |
| 100+ | 60.98 грн |
| 500+ | 45.47 грн |
| 1000+ | 41.69 грн |
| SMCJ110A V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
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