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BC856BWH RFG BC856BWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC856BWH Description: 100MA, -80V PNP TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC856BWH RFG BC856BWH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC856BWH Description: 100MA, -80V PNP TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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MBS4H MBS4H Taiwan Semiconductor Corporation MBS2%20SERIES_Q2309.pdf Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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MBS4H MBS4H Taiwan Semiconductor Corporation MBS2%20SERIES_Q2309.pdf Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
7+45.07 грн
12+26.86 грн
100+17.25 грн
500+12.29 грн
1000+11.03 грн
Мінімальне замовлення: 7
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TS25P07G-K TS25P07G-K Taiwan Semiconductor Corporation TS25P05G-K SERIES_C2104.pdf Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GPAS1004 GPAS1004 Taiwan Semiconductor Corporation GPAS1001 SERIES_D2211.pdf Description: DIODE STANDARD 400V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+29.30 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
GPAS1004 GPAS1004 Taiwan Semiconductor Corporation GPAS1001 SERIES_D2211.pdf Description: DIODE STANDARD 400V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
4+95.58 грн
10+57.92 грн
100+38.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UGF1004GH UGF1004GH Taiwan Semiconductor Corporation UGF1004G SERIES_F2105.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
4+89.36 грн
10+53.95 грн
100+35.69 грн
500+26.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UGF1004G UGF1004G Taiwan Semiconductor Corporation UGF1004G SERIES_F2105.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
4+89.36 грн
50+40.15 грн
100+35.69 грн
500+26.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UGF1004GAH UGF1004GAH Taiwan Semiconductor Corporation UGF1004GA%20SERIES_D2501.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
4+90.14 грн
10+54.32 грн
100+35.99 грн
500+26.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UGF1004GA UGF1004GA Taiwan Semiconductor Corporation UGF1004GA%20SERIES_D2501.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
4+90.14 грн
10+54.32 грн
100+35.99 грн
500+26.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UG1004G UG1004G Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+94.80 грн
50+42.80 грн
100+38.08 грн
500+27.95 грн
1000+25.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
UG1004GH UG1004GH Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+94.80 грн
50+42.80 грн
100+38.08 грн
500+27.95 грн
1000+25.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
HERAF1004G HERAF1004G Taiwan Semiconductor Corporation HERAF1001G SERIES_I2105.pdf Description: DIODE STANDARD 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+105.68 грн
50+48.10 грн
100+42.88 грн
500+31.62 грн
1000+28.85 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HERAF1004GH HERAF1004GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
3+105.68 грн
50+48.10 грн
100+42.88 грн
500+31.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SFA1004G SFA1004G Taiwan Semiconductor Corporation SFA1001G SERIES_K2103.pdf Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+119.66 грн
50+55.01 грн
100+49.13 грн
500+36.44 грн
1000+33.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SFA1004GH SFA1004GH Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+119.66 грн
50+55.01 грн
100+49.13 грн
500+36.44 грн
1000+33.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SS24 SS24 Taiwan Semiconductor Corporation pdf.php?pn=SS24 Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.97 грн
6000+6.09 грн
9000+5.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS24 SS24 Taiwan Semiconductor Corporation pdf.php?pn=SS24 Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 13240 шт:
термін постачання 21-31 дні (днів)
10+31.86 грн
16+18.86 грн
100+11.95 грн
500+8.38 грн
1000+7.47 грн
Мінімальне замовлення: 10
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TSM60NE285CE RVG TSM60NE285CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE285CE Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
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TSM60NE285CE RVG TSM60NE285CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE285CE Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
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TSM60NE180CE RVG TSM60NE180CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE180CE Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
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TSM60NE180CE RVG TSM60NE180CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE180CE Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
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TSM60NE110CE RVG TSM60NE110CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE110CE Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+176.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM60NE110CE RVG TSM60NE110CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE110CE Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+439.02 грн
10+284.56 грн
100+207.65 грн
В кошику  од. на суму  грн.
SMCJ6.5AH SMCJ6.5AH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 140A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BC857BH RFG BC857BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BH Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
3000+2.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC857BH RFG BC857BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BH Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
23+13.99 грн
38+8.08 грн
100+5.03 грн
500+3.44 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAT54GWH RHG BAT54GWH RHG Taiwan Semiconductor Corporation pdf.php?pn=BAT54GWH Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT54GWH RHG BAT54GWH RHG Taiwan Semiconductor Corporation pdf.php?pn=BAT54GWH Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 5048 шт:
термін постачання 21-31 дні (днів)
22+14.76 грн
36+8.46 грн
100+5.24 грн
500+3.59 грн
1000+3.16 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SD103AWH RHG SD103AWH RHG Taiwan Semiconductor Corporation pdf.php?pn=SD103AWH Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 28 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SD103AWH RHG SD103AWH RHG Taiwan Semiconductor Corporation pdf.php?pn=SD103AWH Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 28 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
на замовлення 5674 шт:
термін постачання 21-31 дні (днів)
20+16.32 грн
33+9.28 грн
100+5.80 грн
500+3.98 грн
1000+3.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TSM170NH10LCR RLG TSM170NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM170NH10LCR Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+31.19 грн
5000+27.89 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM170NH10LCR RLG TSM170NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM170NH10LCR Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+115.00 грн
10+69.96 грн
100+46.68 грн
500+34.46 грн
1000+31.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HS2GA HS2GA Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+5.99 грн
15000+5.28 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
HS2GA HS2GA Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18358 шт:
термін постачання 21-31 дні (днів)
10+31.08 грн
17+18.56 грн
100+11.70 грн
500+8.20 грн
1000+7.30 грн
2000+6.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMB27CA P6SMB27CA Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.10 грн
6000+8.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
P6SMB27CA P6SMB27CA Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.29 грн
12+26.11 грн
100+16.76 грн
500+11.92 грн
1000+10.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
1N4748A 1N4748A Taiwan Semiconductor Corporation 1N4740A SERIES_O2104.pdf Description: DIODE ZENER 22V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
товару немає в наявності
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SR3090PT SR3090PT Taiwan Semiconductor Corporation SR3020PT SERIES_H2103.pdf Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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SR3090PTH SR3090PTH Taiwan Semiconductor Corporation SR3020PT SERIES_H2103.pdf Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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SR309H SR309H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
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SMBJ10CA SMBJ10CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 10VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: Yes
товару немає в наявності
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SMBJ10CA SMBJ10CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 10VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: Yes
на замовлення 2599 шт:
термін постачання 21-31 дні (днів)
7+49.73 грн
10+39.96 грн
100+28.82 грн
500+22.58 грн
1000+19.24 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
P6KE350CA P6KE350CA Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 300VWM 482VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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P6KE350CA P6KE350CA Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 300VWM 482VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)
5+72.26 грн
10+43.17 грн
100+28.20 грн
500+20.40 грн
1000+18.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSS0230LU Taiwan Semiconductor Corporation TSS0230LU_C1601.pdf Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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TSS0230U Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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FR201G-T FR201G-T Taiwan Semiconductor Corporation FR201G-T%20SERIES_B2105.pdf Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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FR201GH FR201GH Taiwan Semiconductor Corporation FR201G%20SERIES_H2105.pdf Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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FR107G FR107G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+3.93 грн
10000+3.42 грн
Мінімальне замовлення: 5000
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FR107G FR107G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 22166 шт:
термін постачання 21-31 дні (днів)
16+20.20 грн
25+12.05 грн
100+7.55 грн
500+5.22 грн
1000+4.62 грн
2000+4.11 грн
Мінімальне замовлення: 16
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BZT52B3V9SH RRG BZT52B3V9SH RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52B3V9SH Description: SOD-323, 200MW, 2%, 3.9V, ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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TSM70N900CH TSM70N900CH Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CP TSM70N900CP Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CI TSM70N900CI Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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GS1MFL GS1MFL Taiwan Semiconductor Corporation pdf.php?pn=GS1MFL Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
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GS1MB GS1MB Taiwan Semiconductor Corporation pdf.php?pn=GS1MB Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BC846BH RFG BC846BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC846BH RFG BC846BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
23+13.99 грн
37+8.23 грн
100+5.11 грн
500+3.50 грн
1000+3.08 грн
Мінімальне замовлення: 23
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BC856BWH RFG pdf.php?pn=BC856BWH
BC856BWH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, -80V PNP TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC856BWH RFG pdf.php?pn=BC856BWH
BC856BWH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, -80V PNP TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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MBS4H MBS2%20SERIES_Q2309.pdf
MBS4H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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MBS4H MBS2%20SERIES_Q2309.pdf
MBS4H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+45.07 грн
12+26.86 грн
100+17.25 грн
500+12.29 грн
1000+11.03 грн
Мінімальне замовлення: 7
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TS25P07G-K TS25P05G-K SERIES_C2104.pdf
TS25P07G-K
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GPAS1004 GPAS1001 SERIES_D2211.pdf
GPAS1004
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+29.30 грн
Мінімальне замовлення: 800
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GPAS1004 GPAS1001 SERIES_D2211.pdf
GPAS1004
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.58 грн
10+57.92 грн
100+38.45 грн
Мінімальне замовлення: 4
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UGF1004GH UGF1004G SERIES_F2105.pdf
UGF1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.36 грн
10+53.95 грн
100+35.69 грн
500+26.15 грн
Мінімальне замовлення: 4
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UGF1004G UGF1004G SERIES_F2105.pdf
UGF1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.36 грн
50+40.15 грн
100+35.69 грн
500+26.15 грн
Мінімальне замовлення: 4
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UGF1004GAH UGF1004GA%20SERIES_D2501.pdf
UGF1004GAH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.14 грн
10+54.32 грн
100+35.99 грн
500+26.37 грн
Мінімальне замовлення: 4
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UGF1004GA UGF1004GA%20SERIES_D2501.pdf
UGF1004GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.14 грн
10+54.32 грн
100+35.99 грн
500+26.37 грн
Мінімальне замовлення: 4
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UG1004G UG1004G SERIES_B2104.pdf
UG1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.80 грн
50+42.80 грн
100+38.08 грн
500+27.95 грн
1000+25.45 грн
Мінімальне замовлення: 4
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UG1004GH UG1004G SERIES_B2104.pdf
UG1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.80 грн
50+42.80 грн
100+38.08 грн
500+27.95 грн
1000+25.45 грн
Мінімальне замовлення: 4
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HERAF1004G HERAF1001G SERIES_I2105.pdf
HERAF1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+105.68 грн
50+48.10 грн
100+42.88 грн
500+31.62 грн
1000+28.85 грн
Мінімальне замовлення: 3
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HERAF1004GH
HERAF1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+105.68 грн
50+48.10 грн
100+42.88 грн
500+31.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SFA1004G SFA1001G SERIES_K2103.pdf
SFA1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.66 грн
50+55.01 грн
100+49.13 грн
500+36.44 грн
1000+33.33 грн
Мінімальне замовлення: 3
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SFA1004GH SFA1001G%20SERIES_K2103.pdf
SFA1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.66 грн
50+55.01 грн
100+49.13 грн
500+36.44 грн
1000+33.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SS24 pdf.php?pn=SS24
SS24
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.97 грн
6000+6.09 грн
9000+5.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS24 pdf.php?pn=SS24
SS24
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 13240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.86 грн
16+18.86 грн
100+11.95 грн
500+8.38 грн
1000+7.47 грн
Мінімальне замовлення: 10
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TSM60NE285CE RVG pdf.php?pn=TSM60NE285CE
TSM60NE285CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
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TSM60NE285CE RVG pdf.php?pn=TSM60NE285CE
TSM60NE285CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
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TSM60NE180CE RVG pdf.php?pn=TSM60NE180CE
TSM60NE180CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
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TSM60NE180CE RVG pdf.php?pn=TSM60NE180CE
TSM60NE180CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
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TSM60NE110CE RVG pdf.php?pn=TSM60NE110CE
TSM60NE110CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+176.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TSM60NE110CE RVG pdf.php?pn=TSM60NE110CE
TSM60NE110CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+439.02 грн
10+284.56 грн
100+207.65 грн
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SMCJ6.5AH SMCJH SERIES_A2102.pdf
SMCJ6.5AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 140A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BC857BH RFG pdf.php?pn=BC857BH
BC857BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BC857BH RFG pdf.php?pn=BC857BH
BC857BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.99 грн
38+8.08 грн
100+5.03 грн
500+3.44 грн
1000+3.03 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAT54GWH RHG pdf.php?pn=BAT54GWH
BAT54GWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT54GWH RHG pdf.php?pn=BAT54GWH
BAT54GWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 5048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.76 грн
36+8.46 грн
100+5.24 грн
500+3.59 грн
1000+3.16 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
SD103AWH RHG pdf.php?pn=SD103AWH
SD103AWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 28 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SD103AWH RHG pdf.php?pn=SD103AWH
SD103AWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 28 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
на замовлення 5674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.32 грн
33+9.28 грн
100+5.80 грн
500+3.98 грн
1000+3.51 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TSM170NH10LCR RLG pdf.php?pn=TSM170NH10LCR
TSM170NH10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.19 грн
5000+27.89 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM170NH10LCR RLG pdf.php?pn=TSM170NH10LCR
TSM170NH10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.00 грн
10+69.96 грн
100+46.68 грн
500+34.46 грн
1000+31.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HS2GA HS2AA SERIES_J2102.pdf
HS2GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+5.99 грн
15000+5.28 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
HS2GA HS2AA SERIES_J2102.pdf
HS2GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.08 грн
17+18.56 грн
100+11.70 грн
500+8.20 грн
1000+7.30 грн
2000+6.54 грн
Мінімальне замовлення: 10
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P6SMB27CA P6SMB SERIES_Q2209.pdf
P6SMB27CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.10 грн
6000+8.89 грн
Мінімальне замовлення: 3000
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P6SMB27CA P6SMB SERIES_Q2209.pdf
P6SMB27CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.29 грн
12+26.11 грн
100+16.76 грн
500+11.92 грн
1000+10.69 грн
Мінімальне замовлення: 8
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1N4748A 1N4740A SERIES_O2104.pdf
1N4748A
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
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SR3090PT SR3020PT SERIES_H2103.pdf
SR3090PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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SR3090PTH SR3020PT SERIES_H2103.pdf
SR3090PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
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SR309H
SR309H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
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SMBJ10CA SMBJ SERIES_R2104.pdf
SMBJ10CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: Yes
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SMBJ10CA SMBJ SERIES_R2104.pdf
SMBJ10CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: Yes
на замовлення 2599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.73 грн
10+39.96 грн
100+28.82 грн
500+22.58 грн
1000+19.24 грн
Мінімальне замовлення: 7
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P6KE350CA P6KE SERIES_P2203.pdf
P6KE350CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 300VWM 482VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE350CA P6KE SERIES_P2203.pdf
P6KE350CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 300VWM 482VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.26 грн
10+43.17 грн
100+28.20 грн
500+20.40 грн
1000+18.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSS0230LU TSS0230LU_C1601.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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TSS0230U
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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FR201G-T FR201G-T%20SERIES_B2105.pdf
FR201G-T
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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FR201GH FR201G%20SERIES_H2105.pdf
FR201GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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FR107G FR101G SERIES_H2104.pdf
FR107G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.93 грн
10000+3.42 грн
Мінімальне замовлення: 5000
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FR107G FR101G SERIES_H2104.pdf
FR107G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 22166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.20 грн
25+12.05 грн
100+7.55 грн
500+5.22 грн
1000+4.62 грн
2000+4.11 грн
Мінімальне замовлення: 16
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BZT52B3V9SH RRG pdf.php?pn=BZT52B3V9SH
BZT52B3V9SH RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323, 200MW, 2%, 3.9V, ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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TSM70N900CH
TSM70N900CH
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CP
TSM70N900CP
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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TSM70N900CI
TSM70N900CI
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
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GS1MFL pdf.php?pn=GS1MFL
GS1MFL
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
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GS1MB pdf.php?pn=GS1MB
GS1MB
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BC846BH RFG pdf.php?pn=BC846BH
BC846BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
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BC846BH RFG pdf.php?pn=BC846BH
BC846BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.99 грн
37+8.23 грн
100+5.11 грн
500+3.50 грн
1000+3.08 грн
Мінімальне замовлення: 23
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