Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25358) > Сторінка 407 з 423

Обрати Сторінку:   [  << Попередня Сторінка ]  1 42 84 126 168 210 252 294 336 378 402 403 404 405 406 407 408 409 410 411 412 420 423  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
UGF1004G UGF1004G Taiwan Semiconductor Corporation UGF1004G SERIES_F2105.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
4+90.98 грн
50+40.88 грн
100+36.34 грн
500+26.62 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UGF1004GAH UGF1004GAH Taiwan Semiconductor Corporation UGF1004GA%20SERIES_D2501.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
4+91.77 грн
10+55.31 грн
100+36.65 грн
500+26.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UGF1004GA UGF1004GA Taiwan Semiconductor Corporation UGF1004GA%20SERIES_D2501.pdf Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
4+91.77 грн
10+55.31 грн
100+36.65 грн
500+26.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UG1004G UG1004G Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 200V 10A TO-220AB
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+96.52 грн
50+43.58 грн
100+38.77 грн
500+28.46 грн
1000+25.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UG1004GH UG1004GH Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 200V 10A TO-220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+96.52 грн
50+43.58 грн
100+38.77 грн
500+28.46 грн
1000+25.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HERAF1004G HERAF1004G Taiwan Semiconductor Corporation HERAF1001G SERIES_I2105.pdf Description: DIODE STANDARD 300V 10A ITO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+107.60 грн
50+48.97 грн
100+43.65 грн
500+32.20 грн
1000+29.38 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
HERAF1004GH HERAF1004GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 300V 10A ITO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
3+107.60 грн
50+48.97 грн
100+43.65 грн
500+32.20 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SFA1004G SFA1004G Taiwan Semiconductor Corporation SFA1001G SERIES_K2103.pdf Description: DIODE STANDARD 200V 10A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+121.84 грн
50+56.01 грн
100+50.02 грн
500+37.10 грн
1000+33.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SFA1004GH SFA1004GH Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE STANDARD 200V 10A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+121.84 грн
50+56.01 грн
100+50.02 грн
500+37.10 грн
1000+33.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NE285CE RVG TSM60NE285CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE285CE Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE285CE RVG TSM60NE285CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE285CE Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE180CE RVG TSM60NE180CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE180CE Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE180CE RVG TSM60NE180CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE180CE Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE110CE RVG TSM60NE110CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE110CE Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+179.37 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TSM60NE110CE RVG TSM60NE110CE RVG Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE110CE Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+447.01 грн
10+289.74 грн
100+211.42 грн
В кошику  од. на суму  грн.
SMCJ6.5AH SMCJ6.5AH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 140A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
товару немає в наявності
В кошику  од. на суму  грн.
BC857BH RFG BC857BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BH Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
3000+2.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC857BH RFG BC857BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC857BH Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
23+14.24 грн
38+8.23 грн
100+5.10 грн
500+3.49 грн
1000+3.07 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
BAT54GWH RHG BAT54GWH RHG Taiwan Semiconductor Corporation pdf.php?pn=BAT54GWH Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.94 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAT54GWH RHG BAT54GWH RHG Taiwan Semiconductor Corporation pdf.php?pn=BAT54GWH Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 5048 шт:
термін постачання 21-31 дні (днів)
22+15.03 грн
36+8.61 грн
100+5.33 грн
500+3.65 грн
1000+3.22 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
SD103AWH RHG SD103AWH RHG Taiwan Semiconductor Corporation pdf.php?pn=SD103AWH Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 28 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SD103AWH RHG SD103AWH RHG Taiwan Semiconductor Corporation pdf.php?pn=SD103AWH Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 28 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 5674 шт:
термін постачання 21-31 дні (днів)
20+16.61 грн
33+9.45 грн
100+5.90 грн
500+4.06 грн
1000+3.58 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
TSM170NH10LCR RLG TSM170NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM170NH10LCR Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+31.75 грн
5000+28.39 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TSM170NH10LCR RLG TSM170NH10LCR RLG Taiwan Semiconductor Corporation pdf.php?pn=TSM170NH10LCR Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+117.09 грн
10+71.23 грн
100+47.53 грн
500+35.08 грн
1000+32.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
HS2GA HS2GA Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+6.10 грн
15000+5.37 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
HS2GA HS2GA Taiwan Semiconductor Corporation HS2AA SERIES_J2102.pdf Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18358 шт:
термін постачання 21-31 дні (днів)
10+31.65 грн
17+18.89 грн
100+11.92 грн
500+8.35 грн
1000+7.43 грн
2000+6.66 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
P6SMB27CA P6SMB27CA Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.29 грн
6000+9.05 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB27CA P6SMB27CA Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+45.10 грн
12+26.59 грн
100+17.07 грн
500+12.14 грн
1000+10.89 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
1N4748A 1N4748A Taiwan Semiconductor Corporation 1N4740A SERIES_O2104.pdf Description: DIODE ZENER 22V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
товару немає в наявності
В кошику  од. на суму  грн.
SR3090PT SR3090PT Taiwan Semiconductor Corporation SR3020PT SERIES_H2103.pdf Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
товару немає в наявності
В кошику  од. на суму  грн.
SR3090PTH SR3090PTH Taiwan Semiconductor Corporation SR3020PT SERIES_H2103.pdf Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SR309H SR309H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ10CA SMBJ10CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: Yes
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ10CA SMBJ10CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: Yes
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 2599 шт:
термін постачання 21-31 дні (днів)
7+50.63 грн
10+40.68 грн
100+29.34 грн
500+22.99 грн
1000+19.59 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
P6KE350CA P6KE350CA Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 300VWM 482VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
P6KE350CA P6KE350CA Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 300VWM 482VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)
5+73.58 грн
10+43.96 грн
100+28.71 грн
500+20.77 грн
1000+18.79 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
TSS0230LU Taiwan Semiconductor Corporation TSS0230LU_C1601.pdf Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TSS0230U Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
FR201G-T FR201G-T Taiwan Semiconductor Corporation FR201G-T%20SERIES_B2105.pdf Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
FR201GH FR201GH Taiwan Semiconductor Corporation FR201G%20SERIES_H2105.pdf Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
FR107G FR107G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+4.04 грн
10000+3.51 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FR107G FR107G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 22166 шт:
термін постачання 21-31 дні (днів)
15+21.36 грн
25+12.42 грн
100+7.75 грн
500+5.36 грн
1000+4.74 грн
2000+4.22 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BZT52B3V9SH RRG BZT52B3V9SH RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52B3V9SH Description: SOD-323, 200MW, 2%, 3.9V, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CH TSM70N900CH Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CP TSM70N900CP Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CI TSM70N900CI Taiwan Semiconductor Corporation Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1MFL GS1MFL Taiwan Semiconductor Corporation pdf.php?pn=GS1MFL Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
GS1MB GS1MB Taiwan Semiconductor Corporation pdf.php?pn=GS1MB Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BC846BH RFG BC846BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BC846BH RFG BC846BH RFG Taiwan Semiconductor Corporation pdf.php?pn=BC846BH Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
20+15.82 грн
34+8.99 грн
100+5.58 грн
500+3.82 грн
1000+3.36 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SFA806GH SFA806GH Taiwan Semiconductor Corporation SFA801G%20SERIES_K2103.pdf Description: DIODE STANDARD 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+93.36 грн
50+42.15 грн
100+37.47 грн
500+27.47 грн
1000+24.99 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SFA801G SFA801G Taiwan Semiconductor Corporation SFA801G SERIES_K2103.pdf Description: DIODE STANDARD 50V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA801GH SFA801GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 50V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA802G SFA802G Taiwan Semiconductor Corporation SFA801G SERIES_K2103.pdf Description: DIODE STANDARD 100V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA802GH SFA802GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 100V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SFA805G SFA805G Taiwan Semiconductor Corporation SFA801G SERIES_K2103.pdf Description: DIODE STANDARD 300V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA805GH SFA805GH Taiwan Semiconductor Corporation Description: DIODE STANDARD 300V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
GS2MA GS2MA Taiwan Semiconductor Corporation pdf.php?pn=GS2MA Description: 2A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GS2M GS2M Taiwan Semiconductor Corporation pdf.php?pn=GS2M Description: 2A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB30A P6SMB30A Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf description Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
UGF1004G UGF1004G SERIES_F2105.pdf
UGF1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.98 грн
50+40.88 грн
100+36.34 грн
500+26.62 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UGF1004GAH UGF1004GA%20SERIES_D2501.pdf
UGF1004GAH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.77 грн
10+55.31 грн
100+36.65 грн
500+26.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UGF1004GA UGF1004GA%20SERIES_D2501.pdf
UGF1004GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.77 грн
10+55.31 грн
100+36.65 грн
500+26.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UG1004G UG1004G SERIES_B2104.pdf
UG1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO-220AB
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.52 грн
50+43.58 грн
100+38.77 грн
500+28.46 грн
1000+25.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
UG1004GH UG1004G SERIES_B2104.pdf
UG1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO-220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.52 грн
50+43.58 грн
100+38.77 грн
500+28.46 грн
1000+25.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
HERAF1004G HERAF1001G SERIES_I2105.pdf
HERAF1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 10A ITO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.60 грн
50+48.97 грн
100+43.65 грн
500+32.20 грн
1000+29.38 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
HERAF1004GH
HERAF1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 10A ITO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.60 грн
50+48.97 грн
100+43.65 грн
500+32.20 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SFA1004G SFA1001G SERIES_K2103.pdf
SFA1004G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.84 грн
50+56.01 грн
100+50.02 грн
500+37.10 грн
1000+33.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SFA1004GH SFA1001G%20SERIES_K2103.pdf
SFA1004GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.84 грн
50+56.01 грн
100+50.02 грн
500+37.10 грн
1000+33.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NE285CE RVG pdf.php?pn=TSM60NE285CE
TSM60NE285CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE285CE RVG pdf.php?pn=TSM60NE285CE
TSM60NE285CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 16A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE180CE RVG pdf.php?pn=TSM60NE180CE
TSM60NE180CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE180CE RVG pdf.php?pn=TSM60NE180CE
TSM60NE180CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NE110CE RVG pdf.php?pn=TSM60NE110CE
TSM60NE110CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+179.37 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TSM60NE110CE RVG pdf.php?pn=TSM60NE110CE
TSM60NE110CE RVG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+447.01 грн
10+289.74 грн
100+211.42 грн
В кошику  од. на суму  грн.
SMCJ6.5AH SMCJH SERIES_A2102.pdf
SMCJ6.5AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 140A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
товару немає в наявності
В кошику  од. на суму  грн.
BC857BH RFG pdf.php?pn=BC857BH
BC857BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BC857BH RFG pdf.php?pn=BC857BH
BC857BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: SOT-23, -50V, -0.1A, PNP TRANSI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 5790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.24 грн
38+8.23 грн
100+5.10 грн
500+3.49 грн
1000+3.07 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
BAT54GWH RHG pdf.php?pn=BAT54GWH
BAT54GWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.94 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAT54GWH RHG pdf.php?pn=BAT54GWH
BAT54GWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 30V, 0.2A, SCHOTTKY DIO
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 5048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.03 грн
36+8.61 грн
100+5.33 грн
500+3.65 грн
1000+3.22 грн
Мінімальне замовлення: 22 шт
В кошику  од. на суму  грн.
SD103AWH RHG pdf.php?pn=SD103AWH
SD103AWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 28 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.28 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SD103AWH RHG pdf.php?pn=SD103AWH
SD103AWH RHG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 40V, 0.35A, SCHOTTKY DI
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 28 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 5674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.61 грн
33+9.45 грн
100+5.90 грн
500+4.06 грн
1000+3.58 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
TSM170NH10LCR RLG pdf.php?pn=TSM170NH10LCR
TSM170NH10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.75 грн
5000+28.39 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TSM170NH10LCR RLG pdf.php?pn=TSM170NH10LCR
TSM170NH10LCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: 100A, 50V, SINGLE, N-CHANNEL LOW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (4.9x5.75)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.09 грн
10+71.23 грн
100+47.53 грн
500+35.08 грн
1000+32.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
HS2GA HS2AA SERIES_J2102.pdf
HS2GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+6.10 грн
15000+5.37 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
HS2GA HS2AA SERIES_J2102.pdf
HS2GA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 18358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.65 грн
17+18.89 грн
100+11.92 грн
500+8.35 грн
1000+7.43 грн
2000+6.66 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
P6SMB27CA P6SMB SERIES_Q2209.pdf
P6SMB27CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.29 грн
6000+9.05 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMB27CA P6SMB SERIES_Q2209.pdf
P6SMB27CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.10 грн
12+26.59 грн
100+17.07 грн
500+12.14 грн
1000+10.89 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
1N4748A 1N4740A SERIES_O2104.pdf
1N4748A
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
товару немає в наявності
В кошику  од. на суму  грн.
SR3090PT SR3020PT SERIES_H2103.pdf
SR3090PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
товару немає в наявності
В кошику  од. на суму  грн.
SR3090PTH SR3020PT SERIES_H2103.pdf
SR3090PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 90V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SR309H
SR309H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ10CA SMBJ SERIES_R2104.pdf
SMBJ10CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: Yes
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ10CA SMBJ SERIES_R2104.pdf
SMBJ10CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AA
Power Line Protection: Yes
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 35.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 2599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.63 грн
10+40.68 грн
100+29.34 грн
500+22.99 грн
1000+19.59 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
P6KE350CA P6KE SERIES_P2203.pdf
P6KE350CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 300VWM 482VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
P6KE350CA P6KE SERIES_P2203.pdf
P6KE350CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 300VWM 482VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.58 грн
10+43.96 грн
100+28.71 грн
500+20.77 грн
1000+18.79 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
TSS0230LU TSS0230LU_C1601.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TSS0230U
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
FR201G-T FR201G-T%20SERIES_B2105.pdf
FR201G-T
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
FR201GH FR201G%20SERIES_H2105.pdf
FR201GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
FR107G FR101G SERIES_H2104.pdf
FR107G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+4.04 грн
10000+3.51 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FR107G FR101G SERIES_H2104.pdf
FR107G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 22166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.36 грн
25+12.42 грн
100+7.75 грн
500+5.36 грн
1000+4.74 грн
2000+4.22 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BZT52B3V9SH RRG pdf.php?pn=BZT52B3V9SH
BZT52B3V9SH RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323, 200MW, 2%, 3.9V, ZENER
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CH
TSM70N900CH
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CP
TSM70N900CP
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N900CI
TSM70N900CI
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1MFL pdf.php?pn=GS1MFL
GS1MFL
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
GS1MB pdf.php?pn=GS1MB
GS1MB
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
BC846BH RFG pdf.php?pn=BC846BH
BC846BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BC846BH RFG pdf.php?pn=BC846BH
BC846BH RFG
Виробник: Taiwan Semiconductor Corporation
Description: 100MA, 80V NPN TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 2624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.82 грн
34+8.99 грн
100+5.58 грн
500+3.82 грн
1000+3.36 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SFA806GH SFA801G%20SERIES_K2103.pdf
SFA806GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.36 грн
50+42.15 грн
100+37.47 грн
500+27.47 грн
1000+24.99 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
SFA801G SFA801G SERIES_K2103.pdf
SFA801G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA801GH
SFA801GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA802G SFA801G SERIES_K2103.pdf
SFA802G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA802GH
SFA802GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SFA805G SFA801G SERIES_K2103.pdf
SFA805G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SFA805GH
SFA805GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
GS2MA pdf.php?pn=GS2MA
GS2MA
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GS2M pdf.php?pn=GS2M
GS2M
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB30A description P6SMB SERIES_Q2209.pdf
P6SMB30A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 42 84 126 168 210 252 294 336 378 402 403 404 405 406 407 408 409 410 411 412 420 423  [ Наступна Сторінка >> ]