Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66304) > Сторінка 1088 з 1106
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| HER3003PT | Taiwan Semiconductor |
Rectifier Diode Switching 200V 30A 50ns 3-Pin(3+Tab) TO-3P |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5408GH | Taiwan Semiconductor |
Diode 1KV 3A Automotive 2-Pin DO-201AD T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6S RRG | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6 RHG | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6S R9G | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6-G RHG | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 410mW 2-Pin SOD-123 T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6 RH | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52B5V6S RR | Taiwan Semiconductor |
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFAF1606G | Taiwan Semiconductor |
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SA45A A0G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMDJ33A | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMDJ33AHR7G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMDJ33A R6G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMDJ33AHV7G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HER307G | Taiwan Semiconductor |
Diode Switching 800V 3A 2-Pin DO-201AD T/R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TS19721ACS RLG | Taiwan Semiconductor |
LED Driver 2600uA SupplyCurrent 8-Pin SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE43A | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B36 RYG | Taiwan Semiconductor |
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B3V6 RYG | Taiwan Semiconductor |
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B4V7 RYG | Taiwan Semiconductor |
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B5V1 RYG | Taiwan Semiconductor |
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B18 RYG | Taiwan Semiconductor |
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B20 RYG | Taiwan Semiconductor |
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B24 RYG | Taiwan Semiconductor |
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B27 RYG | Taiwan Semiconductor |
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZY55B2V7 RYG | Taiwan Semiconductor |
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ43AHM2G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ43A M2G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ43A M2 | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ43A | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ43A R3G | Taiwan Semiconductor |
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMAJ43AHR3G | Taiwan Semiconductor |
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC548C B1G | TAIWAN SEMICONDUCTOR |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 420...800 Mounting: THT Kind of package: bulk Pulsed collector current: 0.2A |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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TSM850N06CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.3A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: tape Kind of channel: enhancement |
на замовлення 340 шт: термін постачання 21-30 дні (днів) |
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RMB6S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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1.5KE100CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 137V Breakdown voltage: 100V Max. forward impulse current: 11.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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| TSS54U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Load current: 0.2A Max. forward impulse current: 0.3A Max. forward voltage: 1V Max. off-state voltage: 30V Case: 0603 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSM60N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSM60N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSM60N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX55C12 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX55C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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MMBT3906 RFG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 1599 шт: термін постачання 21-30 дні (днів) |
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TS78L09CS RLG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOP8 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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TS78L09CX RFG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOT23 Mounting: SMD Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V Manufacturer series: TS78L00 |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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LL4148 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel; tape |
на замовлення 9905 шт: термін постачання 21-30 дні (днів) |
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LL4148 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Kind of package: Ammo Pack Power dissipation: 0.5W |
на замовлення 145 шт: термін постачання 21-30 дні (днів) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 2620 шт: термін постачання 21-30 дні (днів) |
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MMBT2222A RFG | TAIWAN SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 722 шт: термін постачання 21-30 дні (днів) |
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TSM2N7002KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 910pC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SK36A R2 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 7601 шт: термін постачання 21-30 дні (днів) |
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1.5KE27A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Max. off-state voltage: 37.5V Breakdown voltage: 27.1V Max. forward impulse current: 42A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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1N5822 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 70A Kind of package: tape Capacitance: 200pF |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE400A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Tolerance: ±5% |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BZX85C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Zener current: 20mA Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO41 Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 705 шт: термін постачання 21-30 дні (днів) |
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| HER3003PT |
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Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 30A 50ns 3-Pin(3+Tab) TO-3P
Rectifier Diode Switching 200V 30A 50ns 3-Pin(3+Tab) TO-3P
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| 1N5408GH |
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Виробник: Taiwan Semiconductor
Diode 1KV 3A Automotive 2-Pin DO-201AD T/R
Diode 1KV 3A Automotive 2-Pin DO-201AD T/R
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| BZT52B5V6S RRG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
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| BZT52B5V6 RHG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R
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| BZT52B5V6S R9G |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
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| BZT52B5V6-G RHG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 410mW 2-Pin SOD-123 T/R
Zener Diode Single 5.6V 2% 40Ohm 410mW 2-Pin SOD-123 T/R
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| BZT52B5V6 RH |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R
Zener Diode Single 5.6V 2% 40Ohm 500mW 2-Pin SOD-123F T/R
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| BZT52B5V6S RR |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
Zener Diode Single 5.6V 2% 40Ohm 200mW 2-Pin SOD-323F T/R
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| SFAF1606G |
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Виробник: Taiwan Semiconductor
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC
Diode Switching 400V 16A 2-Pin(2+Tab) ITO-220AC
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| SA45A A0G |
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Виробник: Taiwan Semiconductor
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R
Diode TVS Single Uni-Dir 45V 500W 2-Pin DO-15 T/R
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| SMDJ33A |
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Виробник: Taiwan Semiconductor
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R
Diode TVS Single Uni-Dir 33V 3KW 2-Pin SMC T/R
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| SMDJ33AHR7G |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
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| SMDJ33A R6G |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW 2-Pin SMC T/R
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| SMDJ33AHV7G |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
TVS Diode Single Uni-Dir 33V 3KW Automotive 2-Pin SMC T/R
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| HER307G |
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Виробник: Taiwan Semiconductor
Diode Switching 800V 3A 2-Pin DO-201AD T/R
Diode Switching 800V 3A 2-Pin DO-201AD T/R
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| TS19721ACS RLG |
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Виробник: Taiwan Semiconductor
LED Driver 2600uA SupplyCurrent 8-Pin SOP
LED Driver 2600uA SupplyCurrent 8-Pin SOP
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| 1.5KE43A |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
TVS Diode Single Uni-Dir 36.8V 1.5KW 2-Pin DO-201
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| BZY55B36 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 36V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B3V6 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 3.6V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B4V7 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 4.7V 2% 70Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B5V1 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 5.1V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B18 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 18V 2% 50Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B20 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 20V 2% 55Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B24 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 24V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B27 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 27V 2% 80Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| BZY55B2V7 RYG |
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Виробник: Taiwan Semiconductor
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
Zener Diode Single 2.7V 2% 85Ohm 500mW 2-Pin Case 0805(2012Metric) T/R
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| SMAJ43AHM2G |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
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| SMAJ43A M2G |
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Виробник: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
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| SMAJ43A M2 |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W 2-Pin SMA T/R
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| SMAJ43A |
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Виробник: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA T/R
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| SMAJ43A R3G |
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Виробник: Taiwan Semiconductor
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
Diode TVS Single Uni-Dir 43V 400W 2-Pin SMA
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| SMAJ43AHR3G |
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Виробник: Taiwan Semiconductor
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Uni-Dir 43V 400W Automotive 2-Pin SMA T/R
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| BC548C B1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Pulsed collector current: 0.2A
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 115+ | 3.90 грн |
| 180+ | 2.29 грн |
| TSM850N06CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.20 грн |
| 23+ | 18.19 грн |
| 100+ | 15.29 грн |
| RMB6S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.75 грн |
| 1.5KE100CA R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.54 грн |
| 25+ | 16.74 грн |
| 30+ | 13.44 грн |
| TSS54U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.2A
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: 0603
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.2A
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Case: 0603
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| TSM60N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| TSM60N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| TSM60N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
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од. на суму грн.
| MBR20100CT C0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
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| TSM10N80CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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| TSM10N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
товару немає в наявності
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од. на суму грн.
| BZX55C12 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BZX55C12 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.40 грн |
| 63+ | 6.44 грн |
| 100+ | 4.05 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.46 грн |
| MMBT3906 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 1599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.53 грн |
| 69+ | 5.88 грн |
| 125+ | 3.24 грн |
| 500+ | 2.25 грн |
| 1000+ | 1.96 грн |
| TS78L09CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.01 грн |
| 14+ | 29.06 грн |
| 25+ | 24.07 грн |
| 100+ | 18.35 грн |
| TS78L09CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Manufacturer series: TS78L00
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.27 грн |
| 15+ | 26.88 грн |
| 25+ | 18.75 грн |
| 100+ | 16.90 грн |
| LL4148 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel; tape
на замовлення 9905 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.47 грн |
| 209+ | 1.93 грн |
| 319+ | 1.26 грн |
| 500+ | 0.93 грн |
| 1000+ | 0.81 грн |
| 5000+ | 0.79 грн |
| LL4148 L1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N4448 A0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.5W
на замовлення 145 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.87 грн |
| 35+ | 11.53 грн |
| 40+ | 10.30 грн |
| 59+ | 6.83 грн |
| 100+ | 6.13 грн |
| 1N4448 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.87 грн |
| 35+ | 11.53 грн |
| 40+ | 10.30 грн |
| 59+ | 6.83 грн |
| 100+ | 6.13 грн |
| 250+ | 3.42 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.56 грн |
| MMBT2222A RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.13 грн |
| 56+ | 7.24 грн |
| 100+ | 4.28 грн |
| 500+ | 3.04 грн |
| TSM2N7002KCX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SK36A R2 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 7601 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.94 грн |
| 31+ | 13.36 грн |
| 50+ | 9.98 грн |
| 100+ | 8.85 грн |
| 250+ | 7.49 грн |
| 500+ | 6.68 грн |
| 1000+ | 5.96 грн |
| 2000+ | 5.39 грн |
| 7500+ | 5.07 грн |
| 1.5KE27A R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.69 грн |
| 1N5822 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Kind of package: tape
Capacitance: 200pF
на замовлення 4 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| 1.5KE400A R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Tolerance: ±5%
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.61 грн |
| 11+ | 37.67 грн |
| 25+ | 29.86 грн |
| 100+ | 26.88 грн |
| P6KE15CA R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.69 грн |
| BZX85C12 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; 20mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Zener current: 20mA
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.20 грн |
| 35+ | 11.83 грн |
| 100+ | 6.54 грн |
| 500+ | 4.58 грн |

















