Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66391) > Сторінка 1092 з 1107
| Фото | Назва | Виробник | Інформація |
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| ES1DFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES1DFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES1DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES1DLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES1DLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES1DVH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 15ns; SMA; Ufmax: 920mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.92V Application: automotive industry Features of semiconductor devices: ultrafast switching Kind of package: reel; tape |
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| SF1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns Mounting: THT Reverse recovery time: 35ns Load current: 5A x2 Max. off-state voltage: 200V Max. load current: 10A Application: automotive industry Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: superfast switching Case: TO220AB |
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| MBR20200PT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO247AD; Ufmax: 1V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 1V Kind of package: tube |
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| MBR6050PT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.93V Kind of package: tube |
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| RS2MAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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| RS2MAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.1V Kind of package: reel; tape |
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| RS2MALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS2MFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS2MFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS2MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 1.3V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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| 1N5404G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 0.4kV Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode Mounting: THT |
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SMBJ30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
на замовлення 3007 шт: термін постачання 21-30 дні (днів) |
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| SMBJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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US1MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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| MUR160S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 1.25V Reverse recovery time: 50ns |
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| MUR160SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 1.25V Reverse recovery time: 50ns Application: automotive industry |
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| MBRS10100CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.95V |
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| SMBJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
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| SMAJ5.0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.4V; 43.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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RS1J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: SMA Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
на замовлення 7366 шт: термін постачання 21-30 дні (днів) |
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| RS1JL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; subSMA; Ufmax: 1.3V Mounting: SMD Case: subSMA Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V Mounting: SMD Case: SOD123W Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 150ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V Mounting: SMD Case: thinSMA Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V Mounting: SMD Application: automotive industry Case: thinSMA Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V Mounting: SMD Case: SOD128 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V Mounting: SMD Application: automotive industry Case: SOD128 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Application: automotive industry Case: SMA Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Application: automotive industry Case: SOD123HE Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 300ns Load current: 1.2A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| RS1JLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V Mounting: SMD Application: automotive industry Case: SOD123W Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 150ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
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| MBR1645 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 630mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.63V Kind of package: tube |
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| SMBJ5.0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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| HER1606PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 80ns; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO3P Max. load current: 16A Reverse recovery time: 80ns Application: automotive industry |
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| MUR1620CT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Max. load current: 16A |
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| MUR1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Reverse recovery time: 25ns Features of semiconductor devices: ultrafast switching Application: automotive industry Max. load current: 16A |
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| SMAJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7V; 16.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Kind of package: reel; tape |
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| SMAJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
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UF4007 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Capacitance: 17pF |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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| TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 60A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| MUR860H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Reverse recovery time: 50ns Application: automotive industry |
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ABS15M | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS Case: ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 1kV |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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| DBLS203G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 50A; DBLS Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 2A Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.15V |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS205G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.15V |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS208G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 2A Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS204G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 2A Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.15V |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS207G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Case: DBLS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.15V |
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В кошику од. на суму грн. | |||||||||||||||
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DBLS209G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A Kind of package: reel; tape Case: DBLS Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.3V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 1.4kV |
на замовлення 1225 шт: термін постачання 21-30 дні (днів) |
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| DBLS152G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 100V Type of bridge rectifier: single-phase |
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В кошику од. на суму грн. | |||||||||||||||
| SMBJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||
| TSM60NE084CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 83W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 84mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
|
SF36G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 125A Semiconductor structure: single diode Case: DO201AD Mounting: THT Reverse recovery time: 35ns Load current: 3A Features of semiconductor devices: superfast switching |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
на замовлення 390 шт: термін постачання 21-30 дні (днів) |
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| SMAJ5.0AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||
| KBU406G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | |||||||||||||||
|
RS1M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Features of semiconductor devices: glass passivated |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
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| RS1ML | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: subSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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В кошику од. на суму грн. |
| ES1DFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES1DFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES1DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES1DLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES1DLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123W; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES1DVH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; SMA; Ufmax: 920mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.92V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
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| SF1004GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Reverse recovery time: 35ns
Load current: 5A x2
Max. off-state voltage: 200V
Max. load current: 10A
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: TO220AB
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Reverse recovery time: 35ns
Load current: 5A x2
Max. off-state voltage: 200V
Max. load current: 10A
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: TO220AB
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| MBR20200PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO247AD; Ufmax: 1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO247AD; Ufmax: 1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Kind of package: tube
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| MBR6050PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.93V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.93V
Kind of package: tube
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| RS2MAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| RS2MAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
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| RS2MALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS2MFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS2MFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS2MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| 1N5404G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
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| SMBJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 3007 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.33 грн |
| 100+ | 13.16 грн |
| 500+ | 11.08 грн |
| 1000+ | 10.21 грн |
| 3000+ | 8.85 грн |
| SMBJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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| US1MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.19 грн |
| 28+ | 14.67 грн |
| 100+ | 8.93 грн |
| MUR160S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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| MUR160SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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| MBRS10100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
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| SMBJ12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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| SMAJ5.0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| RS1J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: SMA
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 7366 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 14.83 грн |
| 35+ | 11.72 грн |
| 100+ | 5.20 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.53 грн |
| RS1JL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; subSMA; Ufmax: 1.3V
Mounting: SMD
Case: subSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Mounting: SMD
Case: SOD123W
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 150ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Mounting: SMD
Case: SOD123W
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 150ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V
Mounting: SMD
Case: thinSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V
Mounting: SMD
Case: thinSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: thinSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; thinSMA; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: thinSMA
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V
Mounting: SMD
Case: SOD128
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V
Mounting: SMD
Case: SOD128
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD128
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SOD128; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD128
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Application: automotive industry
Case: SMA
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Application: automotive industry
Case: SMA
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD123W
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 150ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Mounting: SMD
Application: automotive industry
Case: SOD123W
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 150ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| MBR1645 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 630mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.63V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 630mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.63V
Kind of package: tube
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| SMBJ5.0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| HER1606PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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| MUR1620CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
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| MUR1620CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
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| SMAJ15A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMAJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| UF4007 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Capacitance: 17pF
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.33 грн |
| 28+ | 14.43 грн |
| 35+ | 11.64 грн |
| 100+ | 8.37 грн |
| TSG65N068CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| MUR860H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 50ns
Application: automotive industry
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| ABS15M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 1kV
на замовлення 490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.07 грн |
| 17+ | 24.72 грн |
| 100+ | 16.11 грн |
| DBLS203G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
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| DBLS205G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
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| DBLS208G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
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| DBLS204G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
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| DBLS207G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: DBLS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.15V
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| DBLS209G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A
Kind of package: reel; tape
Case: DBLS
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.4kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A
Kind of package: reel; tape
Case: DBLS
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.4kV
на замовлення 1225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.97 грн |
| 12+ | 35.96 грн |
| 50+ | 27.03 грн |
| 100+ | 24.08 грн |
| 200+ | 21.37 грн |
| 500+ | 18.34 грн |
| 1000+ | 16.43 грн |
| DBLS152G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
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| SMBJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| TSM60NE084CIT C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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| SF36G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO201AD
Mounting: THT
Reverse recovery time: 35ns
Load current: 3A
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO201AD
Mounting: THT
Reverse recovery time: 35ns
Load current: 3A
Features of semiconductor devices: superfast switching
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 16+ | 25.44 грн |
| 100+ | 19.30 грн |
| SMBJ5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
на замовлення 390 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 24+ | 17.30 грн |
| 100+ | 11.56 грн |
| SMAJ5.0AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| KBU406G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| RS1M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 964 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.75 грн |
| 29+ | 14.03 грн |
| 35+ | 11.64 грн |
| 100+ | 5.59 грн |
| 500+ | 3.92 грн |
| RS1ML |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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