Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66304) > Сторінка 1093 з 1106
| Фото | Назва | Виробник | Інформація |
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| DBLS207G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS Case: DBLS Kind of package: reel; tape Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 1kV Type of bridge rectifier: single-phase Electrical mounting: SMT |
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DBLS209G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Max. forward voltage: 1.3V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 1.4kV Type of bridge rectifier: single-phase Electrical mounting: SMT |
на замовлення 1222 шт: термін постачання 21-30 дні (днів) |
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| DBLS152G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 100V |
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| SMBJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 13A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
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| TSM60NE084CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 83W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 84mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement |
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SF36G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 125A Semiconductor structure: single diode Case: DO201AD Mounting: THT Reverse recovery time: 35ns Load current: 3A Features of semiconductor devices: superfast switching |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 385 шт: термін постачання 21-30 дні (днів) |
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| SMAJ5.0AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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| KBU406G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
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RS1M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Features of semiconductor devices: glass passivated |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
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| RS1ML | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: subSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Capacitance: 10pF Features of semiconductor devices: glass passivated |
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| RS1MLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| TSCDF06065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| SMBJ33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 11.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry |
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| UF4004 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 50ns |
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| SF38G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
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| SF38G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 125A Case: DO201AD Reverse recovery time: 35ns |
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| ES2BA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape Case: SMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry |
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| ES2BFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry |
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| D2SB80 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 80A Version: flat Case: GBL Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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SK310A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 708 шт: термін постачання 21-30 дні (днів) |
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| DBLS157G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 1kV |
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| DBLS107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 1kV |
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| DBLS156G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 0.8kV |
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| HER1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double |
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| HER1604PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double |
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| HER1605GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Semiconductor structure: common cathode; double |
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| HER1605PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Semiconductor structure: common cathode; double |
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| HER1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 16A Reverse recovery time: 80ns Application: automotive industry |
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| HER1607GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.8kV Semiconductor structure: common cathode; double |
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| HER1607PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.8kV Semiconductor structure: common cathode; double |
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| HER1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 1kV Semiconductor structure: common cathode; double |
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| HER1608PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 1kV Semiconductor structure: common cathode; double |
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| ES3JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
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| SMAJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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| 1N5402G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
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| MBRAD845H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.7V Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| SMAJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||||
| MBR20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.97V Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||
|
KBL406G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBL Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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| SMF10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 11.8A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS104G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.4kV |
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В кошику од. на суму грн. | |||||||||||||||
| DBLS105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HDBLS103G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 1V Max. off-state voltage: 200V Max. forward impulse current: 50A |
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В кошику од. на суму грн. | |||||||||||||||
| HDBLS105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 50A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBU606G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.8kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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В кошику од. на суму грн. | |||||||||||||||
| KBU607G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 1kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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В кошику од. на суму грн. | |||||||||||||||
| KBU603G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 200V Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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В кошику од. на суму грн. | |||||||||||||||
| KBU604G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBU605G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.6kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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| DBLS207G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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| DBLS209G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.4kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
на замовлення 1222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.54 грн |
| 12+ | 36.30 грн |
| 50+ | 27.28 грн |
| 100+ | 24.31 грн |
| 200+ | 21.57 грн |
| 500+ | 18.51 грн |
| 1000+ | 16.58 грн |
| DBLS152G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
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В кошику
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| SMBJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 13A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 13A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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| TSM60NE084CIT C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
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| SF36G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO201AD
Mounting: THT
Reverse recovery time: 35ns
Load current: 3A
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 125A
Semiconductor structure: single diode
Case: DO201AD
Mounting: THT
Reverse recovery time: 35ns
Load current: 3A
Features of semiconductor devices: superfast switching
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.14 грн |
| 16+ | 25.67 грн |
| 100+ | 19.48 грн |
| SMBJ5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 385 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.00 грн |
| 24+ | 17.47 грн |
| 100+ | 11.67 грн |
| SMAJ5.0AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| KBU406G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
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| RS1M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 964 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.94 грн |
| 29+ | 14.17 грн |
| 35+ | 11.75 грн |
| 100+ | 5.64 грн |
| 500+ | 3.96 грн |
| RS1ML |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Features of semiconductor devices: glass passivated
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| RS1MLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| TSCDF06065G1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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| SMBJ33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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| UF4004 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
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| SF38G-A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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| SF38G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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| ES2BA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
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| ES2BFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
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| D2SB80 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 80A
Version: flat
Case: GBL
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 80A
Version: flat
Case: GBL
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| SK310A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.60 грн |
| 21+ | 19.80 грн |
| 50+ | 13.92 грн |
| 100+ | 11.91 грн |
| 500+ | 8.37 грн |
| DBLS157G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
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| DBLS107G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
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| DBLS156G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
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| HER1604GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
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| HER1604PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
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| HER1605GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
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| HER1605PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
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| HER1606GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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| HER1607GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
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| HER1607PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
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| HER1608GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
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| HER1608PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
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| ES3JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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| 1N5402G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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| MBRAD845H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| MBR20H200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
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| KBL406G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.28 грн |
| 10+ | 52.64 грн |
| 100+ | 39.04 грн |
| SMF10A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| DBLS104G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
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| DBLS105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
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| HDBLS103G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1V
Max. off-state voltage: 200V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1V
Max. off-state voltage: 200V
Max. forward impulse current: 50A
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| HDBLS105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
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| KBU606G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU607G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU603G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU604G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| KBU605G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.68 грн |
| 10+ | 72.44 грн |






