Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66391) > Сторінка 1093 з 1107
| Фото | Назва | Виробник | Інформація |
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| RS1MALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Capacitance: 10pF Features of semiconductor devices: glass passivated |
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| RS1MLSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| RS1MLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape |
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| RS1MLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| TSCDF06065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube |
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| SMBJ33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 11.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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KBU806G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| UF4004 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 50ns |
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| SF38G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
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| SF38G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 125A Case: DO201AD Reverse recovery time: 35ns |
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| ES2BA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape Case: SMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry |
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| ES2BFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
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| ES2BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry |
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| D2SB80 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 80A Version: flat Case: GBL Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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SK310A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 708 шт: термін постачання 21-30 дні (днів) |
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| DBLS157G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A Max. off-state voltage: 1kV Type of bridge rectifier: single-phase |
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| DBLS107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 1kV Type of bridge rectifier: single-phase |
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| DBLS156G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.1V Load current: 1.5A Max. forward impulse current: 50A Max. off-state voltage: 0.8kV |
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| HER1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double |
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| HER1604PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double |
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| HER1605GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Semiconductor structure: common cathode; double |
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| HER1605PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Semiconductor structure: common cathode; double |
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| HER1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 16A Reverse recovery time: 80ns Application: automotive industry |
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| HER1607GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.8kV Semiconductor structure: common cathode; double |
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| HER1607PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.8kV Semiconductor structure: common cathode; double |
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| HER1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns Case: TO220AB Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 1kV Semiconductor structure: common cathode; double |
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| HER1608PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 1kV Semiconductor structure: common cathode; double |
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| ES3JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry |
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| SMAJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
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| 1N5402G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
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| MBRAD845H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.7V Kind of package: reel; tape Application: automotive industry |
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| SMAJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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| MBR20H200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.97V Kind of package: tube |
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KBL406G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBL Electrical mounting: THT Leads: round pin Kind of package: in-tray Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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| SMF10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 11.8A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
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| DBLS104G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.4kV Type of bridge rectifier: single-phase |
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| DBLS105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 40A Max. off-state voltage: 0.6kV Type of bridge rectifier: single-phase |
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| HDBLS103G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1A Max. forward voltage: 1V Max. forward impulse current: 50A Max. off-state voltage: 200V Type of bridge rectifier: single-phase |
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| HDBLS105G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS Case: DBLS Kind of package: reel; tape Electrical mounting: SMT Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Type of bridge rectifier: single-phase |
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| KBU606G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.8kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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| KBU607G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 1kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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| KBU603G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 200V Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
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| KBU604G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||
| KBU605G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.6kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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SMBJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| GBPC2508 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||
| GBPC2508W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||
| SMAJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||
| SMAJ12AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
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В кошику од. на суму грн. | |||||||||||||
| SS12 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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1.5KE91CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 125V Breakdown voltage: 91V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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ES1BAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Load current: 1A Max. off-state voltage: 100V Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: rectifying |
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В кошику од. на суму грн. | ||||||||||||
| ES1BALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 0.95V Load current: 1A Max. off-state voltage: 100V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: rectifying |
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В кошику од. на суму грн. | |||||||||||||
| ES1BFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Load current: 1A Max. off-state voltage: 100V Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: rectifying |
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В кошику од. на суму грн. | |||||||||||||
| ES1BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV Reverse recovery time: 35ns Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 0.95V Load current: 1A Max. off-state voltage: 100V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: rectifying |
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В кошику од. на суму грн. |
| RS1MALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Features of semiconductor devices: glass passivated
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| RS1MLSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| RS1MLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1MLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 250ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| TSCDF06065G1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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| SMBJ33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| KBU806G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.36 грн |
| 10+ | 98.88 грн |
| UF4004 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
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| SF38G-A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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| SF38G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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| ES2BA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 950mV
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
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| ES2BFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| ES2BFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 950mV
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
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| D2SB80 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 80A
Version: flat
Case: GBL
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 80A
Version: flat
Case: GBL
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| SK310A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.34 грн |
| 21+ | 19.62 грн |
| 50+ | 13.79 грн |
| 100+ | 11.80 грн |
| 500+ | 8.29 грн |
| DBLS157G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
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| DBLS107G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Type of bridge rectifier: single-phase
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| DBLS156G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.8kV
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| HER1604GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
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| HER1604PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
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| HER1605GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
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| HER1605PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Semiconductor structure: common cathode; double
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| HER1606GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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| HER1607GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
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| HER1607PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Semiconductor structure: common cathode; double
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| HER1608GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO220AB; 80ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
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| HER1608PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; TO3P; 80ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Semiconductor structure: common cathode; double
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| ES3JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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| 1N5402G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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| MBRAD845H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| MBR20H200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 970mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.97V
Kind of package: tube
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| KBL406G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.45 грн |
| 10+ | 52.15 грн |
| 100+ | 38.67 грн |
| SMF10A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| DBLS104G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
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| DBLS105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 40A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
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| HDBLS103G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1V
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Type of bridge rectifier: single-phase
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| HDBLS105G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
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| KBU606G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.8kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU607G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU603G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU604G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| KBU605G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.87 грн |
| 10+ | 71.76 грн |
| SMBJ36CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.76 грн |
| 25+ | 16.27 грн |
| 100+ | 11.48 грн |
| 500+ | 8.77 грн |
| 1000+ | 7.81 грн |
| 3000+ | 6.30 грн |
| GBPC2508 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2508W |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| SMAJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ12AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| SS12 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 47+ | 8.61 грн |
| 50+ | 8.13 грн |
| 100+ | 6.54 грн |
| 1.5KE91CA R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 12.6A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 125V
Breakdown voltage: 91V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.16 грн |
| 40+ | 10.21 грн |
| ES1BAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
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| ES1BALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
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| ES1BFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
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| ES1BFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
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