Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66146) > Сторінка 1093 з 1103
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMF58A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 2.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMCJ26A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMCJ26AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 37A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SS110 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Case: SMA Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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SS210 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRF20H100CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RS2M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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RS2MA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ18A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MUR820 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 0.975V Reverse recovery time: 25ns |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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BAS70-04 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Case: SOT23 Max. forward impulse current: 0.1A Capacitance: 2pF Kind of package: reel; tape Reverse recovery time: 5ns |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BAS316 RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape Mounting: SMD Type of diode: switching Features of semiconductor devices: fast switching Case: SOD323 Capacitance: 1.5pF Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 4ns Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRS2060CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. load current: 20A Kind of package: reel; tape |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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MUR120S | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR120SH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SK36B | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS3MH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS3M | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; Ufmax: 1.3V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ES1J | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Case: SMA Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Kind of package: reel; tape Features of semiconductor devices: superfast switching Mounting: SMD |
на замовлення 2456 шт: термін постачання 21-30 дні (днів) |
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ES1JL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Case: subSMA Capacitance: 8pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.7V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Kind of package: reel; tape Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
на замовлення 2540 шт: термін постачання 21-30 дні (днів) |
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MUR860 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Reverse recovery time: 50ns |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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BAW56 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ30CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ60A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
US1M | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ18CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ28CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ28CAH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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ES1B | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Max. off-state voltage: 100V Kind of package: reel; tape Type of diode: rectifying Case: SMA Features of semiconductor devices: superfast switching Mounting: SMD |
на замовлення 6645 шт: термін постачання 21-30 дні (днів) |
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SS26 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRS1545CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2 Max. off-state voltage: 45V Load current: 7.5A x2 Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ28A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SMA5938 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.5W; 36V; 10.4mA; SMD; reel,tape; DO214AC,SMA Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 10.4mA |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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MBR20100CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMF24A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 5.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55C30 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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GBU605 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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US1JH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU15L05 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SS12L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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P6SMB24CA M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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GBPC3504 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55C10 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA Kind of package: reel; tape |
на замовлення 1016 шт: термін постачання 21-30 дні (днів) |
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BZX55C10 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA Kind of package: reel; tape |
на замовлення 1100 шт: термін постачання 21-30 дні (днів) |
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SMAJ15CA | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMDJ30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: SMDJ |
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BZX85C3V9 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.9V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 20µA Zener current: 60mA |
на замовлення 565 шт: термін постачання 21-30 дні (днів) |
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BAV99 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A Features of semiconductor devices: fast switching |
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TSM4806CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Case: SOP8 Mounting: SMD Kind of package: tape Power dissipation: 2W Polarisation: unipolar Gate charge: 12.3nC Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 28A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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SMAJ24CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMAJ |
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SMAJ24CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Tolerance: ±5% Manufacturer series: SMAJ |
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TSM250N02CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 25mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
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TSM250NB06DCR RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 9.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 22nC Kind of package: tape Kind of channel: enhancement |
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P4SMA33A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 9A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SMF5.0A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
5.0SMDJ33A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 93.9A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 5.0SMDJ |
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RS3MFSH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Application: automotive industry |
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BZX55C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 16V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA Kind of package: reel; tape |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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TSCR420CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 40V DC Power dissipation: 1W Operating current: 0.3A |
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В кошику од. на суму грн. |
SMF58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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SMCJ26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.9÷31.9V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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SS110 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.35 грн |
32+ | 12.28 грн |
41+ | 9.46 грн |
100+ | 6.48 грн |
284+ | 3.15 грн |
781+ | 2.97 грн |
SS210 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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MBRF20H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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RS2M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.71 грн |
31+ | 12.43 грн |
50+ | 8.24 грн |
100+ | 6.94 грн |
178+ | 5.03 грн |
487+ | 4.73 грн |
1000+ | 4.58 грн |
RS2MA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMBJ18A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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MUR820 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; TO220AC; Ufmax: 0.975V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.45 грн |
10+ | 86.94 грн |
21+ | 45.00 грн |
56+ | 42.71 грн |
BAS70-04 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.1A
Capacitance: 2pF
Kind of package: reel; tape
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.1A
Capacitance: 2pF
Kind of package: reel; tape
Reverse recovery time: 5ns
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
66+ | 6.28 грн |
122+ | 3.13 грн |
164+ | 2.33 грн |
250+ | 2.10 грн |
500+ | 1.94 грн |
546+ | 1.63 грн |
1502+ | 1.55 грн |
BAS316 RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Capacitance: 1.5pF
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape
Mounting: SMD
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOD323
Capacitance: 1.5pF
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Power dissipation: 0.2W
Kind of package: reel; tape
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MBRS2060CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: reel; tape
на замовлення 92 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.42 грн |
10+ | 51.86 грн |
22+ | 40.42 грн |
61+ | 38.13 грн |
MUR120S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
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MUR120SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Application: automotive industry
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SK36B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
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RS3MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
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RS3M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 500ns; SMC; Ufmax: 1.3V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
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ES1J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Mounting: SMD
на замовлення 2456 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.35 грн |
31+ | 12.66 грн |
100+ | 8.16 грн |
284+ | 3.14 грн |
780+ | 2.97 грн |
ES1JL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Case: subSMA
Capacitance: 8pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Case: subSMA
Capacitance: 8pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
на замовлення 2540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.28 грн |
26+ | 15.02 грн |
100+ | 10.22 грн |
158+ | 5.64 грн |
434+ | 5.34 грн |
MUR860 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.52 грн |
10+ | 59.18 грн |
31+ | 29.59 грн |
BAW56 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
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SMAJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMBJ60A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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US1M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
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SMBJ18CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMAJ28CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ28CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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P6SMB15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.29 грн |
35+ | 12.35 грн |
85+ | 10.68 грн |
ES1B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: superfast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: superfast switching
Mounting: SMD
на замовлення 6645 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.43 грн |
41+ | 9.38 грн |
100+ | 6.44 грн |
250+ | 5.63 грн |
310+ | 2.89 грн |
850+ | 2.74 грн |
SS26 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
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MBRS1545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
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SMBJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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1SMA5938 M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; 10.4mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 10.4mA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; 10.4mA; SMD; reel,tape; DO214AC,SMA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 10.4mA
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.07 грн |
MBR20100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
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SMF24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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BZX55C30 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 9.86 грн |
GBU605 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 58 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 82.95 грн |
6+ | 69.40 грн |
17+ | 53.45 грн |
46+ | 50.54 грн |
US1JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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GBU15L05 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
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SS12L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.25 грн |
39+ | 9.84 грн |
100+ | 7.09 грн |
194+ | 4.65 грн |
533+ | 4.35 грн |
P6SMB24CA M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 12.81 грн |
80+ | 11.67 грн |
100+ | 11.52 грн |
215+ | 11.06 грн |
250+ | 10.75 грн |
GBPC3504 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX55C10 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.03 грн |
61+ | 6.25 грн |
71+ | 5.41 грн |
102+ | 3.78 грн |
405+ | 2.20 грн |
BZX55C10 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.19 грн |
140+ | 2.78 грн |
440+ | 2.12 грн |
SMAJ15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMDJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMDJ
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BZX85C3V9 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 60mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.9V; 60mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 60mA
на замовлення 565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 7.31 грн |
100+ | 5.71 грн |
200+ | 4.55 грн |
555+ | 4.30 грн |
BAV99 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
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TSM4806CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 12.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 28A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.60 грн |
14+ | 27.46 грн |
50+ | 18.00 грн |
137+ | 17.01 грн |
SMAJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMAJ
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SMAJ24CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Manufacturer series: SMAJ
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TSM250N02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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TSM250NB06DCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 9.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
Kind of channel: enhancement
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P4SMA33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 9A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33V; 9A; unidirectional; ±5%; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 9A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.46 грн |
22+ | 17.62 грн |
29+ | 13.27 грн |
100+ | 8.08 грн |
SMF5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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5.0SMDJ33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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RS3MFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
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BZX55C16 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: reel; tape
на замовлення 95 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
95+ | 4.11 грн |
TSCR420CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
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