Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66140) > Сторінка 1095 з 1103
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BAV20WS RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Capacitance: 5pF Kind of package: reel; tape Max. forward impulse current: 2.5A Case: SOD323F Max. forward voltage: 1.25V Reverse recovery time: 50ns Power dissipation: 0.2W |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
P4SMA33CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA33CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Application: automotive industry Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BAV20 R0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Capacitance: 5pF Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1.25V Reverse recovery time: 50ns Power dissipation: 0.5W |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BAV20W RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Capacitance: 5pF Kind of package: reel; tape Max. forward impulse current: 625mA Case: SOD123F Max. forward voltage: 1.25V Reverse recovery time: 50ns Power dissipation: 0.41W |
на замовлення 589 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BZX85C7V5 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 7.5V; 35mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 7.5V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO41 Semiconductor structure: single diode Zener current: 35mA Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZX85C8V2 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 8.2V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 25mA Leakage current: 1µA |
на замовлення 789 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BZX85C20 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 20V; 10mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 10mA Kind of package: reel; tape |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
MBRAD545H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape Mounting: SMD Load current: 5A Semiconductor structure: single diode Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 45V Case: thinDPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZT52C9V1 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.45µA |
на замовлення 2965 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SMCJ54A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMCJ54AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ10CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 37A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRAD2045H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape Mounting: SMD Load current: 20A Semiconductor structure: single diode Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 45V Case: thinDPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
1SMA4756 R3G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.25W; 47V; 5.5mA; SMD; reel,tape; DO214AC,SMA; Ir: 1uA Type of diode: Zener Power dissipation: 1.25W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 1µA Zener current: 5.5mA |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
HERF1608GH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRAD860H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ26CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ26CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ26A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ26AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZV55C2V4 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Zener current: 5mA Leakage current: 50µA |
на замовлення 8630 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BZX85C33 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 33V; 8mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 33V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 8mA |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
MUR360S | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR360SBH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MUR360SH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMBJ20CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
на замовлення 2991 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
MUR840H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZX55C7V5 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 7.5V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BZX55C2V7 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Zener current: 5mA Leakage current: 10µA |
на замовлення 530 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BZX55C2V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO35 Semiconductor structure: single diode Zener current: 5mA Leakage current: 10µA |
на замовлення 587 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
P4SMA15A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape Manufacturer series: P4SMA Max. off-state voltage: 12.8V Semiconductor structure: unidirectional Max. forward impulse current: 20A Breakdown voltage: 15V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Mounting: SMD Case: SMA Tolerance: ±5% |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SS115L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 35A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 4nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TSG65N190CR RVG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN56 Gate-source voltage: -10...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMF15A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 8.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA6.8CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 5.8V Semiconductor structure: bidirectional Max. forward impulse current: 40A Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Breakdown voltage: 6.46V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA6.8A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 40A Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Breakdown voltage: 6.46V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA15A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Mounting: SMD Max. off-state voltage: 12.8V Semiconductor structure: unidirectional Max. forward impulse current: 20A Breakdown voltage: 14.3V Type of diode: TVS Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA15AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Mounting: SMD Max. off-state voltage: 12.8V Semiconductor structure: unidirectional Max. forward impulse current: 20A Breakdown voltage: 14.3V Application: automotive industry Type of diode: TVS Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMA15CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA Mounting: SMD Max. off-state voltage: 12.8V Semiconductor structure: bidirectional Max. forward impulse current: 20A Breakdown voltage: 14.3V Type of diode: TVS Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMCJ40A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMCJ40AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ58CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ58A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBR20200CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 1.1V Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS36H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS36LWH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SD103CW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.35A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Kind of package: reel; tape |
на замовлення 2465 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
SD103BW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: SOD123 Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.35A Semiconductor structure: single diode Max. forward impulse current: 1.5A |
на замовлення 705 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SS16L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS16M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; microSMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 25A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
6A60G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V Case: R6 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated Max. forward impulse current: 250A Max. forward voltage: 1V Max. off-state voltage: 0.6kV Capacitance: 60pF Semiconductor structure: single diode Load current: 6A |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SS34FSH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD128F; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD128F Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS34H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SMC Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS34LWH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123W; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD123W Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
MBR2545CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 40V Load current: 12.5A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. load current: 25A |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS14L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 650 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SS14M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
BAV20WS RRG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 2.5A
Case: SOD323F
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323F; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 2.5A
Case: SOD323F
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.2W
на замовлення 770 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.50 грн |
100+ | 3.97 грн |
250+ | 3.16 грн |
295+ | 3.03 грн |
P4SMA33CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
товару немає в наявності
В кошику
од. на суму грн.
P4SMA33CAH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Application: automotive industry
Manufacturer series: P4SMA
товару немає в наявності
В кошику
од. на суму грн.
BAV20 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.5W
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
95+ | 4.34 грн |
137+ | 2.80 грн |
144+ | 2.65 грн |
155+ | 2.47 грн |
250+ | 2.40 грн |
500+ | 2.31 грн |
1000+ | 2.23 грн |
BAV20W RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 625mA
Case: SOD123F
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.41W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123F; Ufmax: 1.25V; 410mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Kind of package: reel; tape
Max. forward impulse current: 625mA
Case: SOD123F
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.41W
на замовлення 589 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.76 грн |
115+ | 3.42 грн |
250+ | 2.76 грн |
295+ | 2.75 грн |
BZX85C7V5 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 7.5V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 7.5V; 35mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO41
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
BZX85C8V2 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 25mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 25mA
Leakage current: 1µA
на замовлення 789 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.43 грн |
34+ | 11.52 грн |
39+ | 10.03 грн |
100+ | 6.94 грн |
204+ | 4.38 грн |
500+ | 4.37 грн |
561+ | 4.13 грн |
BZX85C20 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; 10mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 10mA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; 10mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 10mA
Kind of package: reel; tape
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 7.31 грн |
100+ | 5.71 грн |
MBRAD545H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Case: thinDPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Case: thinDPAK
товару немає в наявності
В кошику
од. на суму грн.
BZT52C9V1 RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.45µA
на замовлення 2965 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.68 грн |
61+ | 6.25 грн |
100+ | 3.90 грн |
250+ | 3.26 грн |
331+ | 2.70 грн |
908+ | 2.55 грн |
1000+ | 2.47 грн |
SMCJ54A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику
од. на суму грн.
SMCJ54AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMBJ10CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику
од. на суму грн.
MBRAD2045H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Mounting: SMD
Load current: 20A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Case: thinDPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Mounting: SMD
Load current: 20A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Case: thinDPAK
товару немає в наявності
В кошику
од. на суму грн.
1SMA4756 R3G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; 5.5mA; SMD; reel,tape; DO214AC,SMA; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5.5mA
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 47V; 5.5mA; SMD; reel,tape; DO214AC,SMA; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5.5mA
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 6.56 грн |
HERF1608GH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
MBRAD860H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMBJ26CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
SMBJ26CAH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
SMBJ26A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику
од. на суму грн.
SMBJ26AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZV55C2V4 L0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 50µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 50µA
на замовлення 8630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.32 грн |
48+ | 8.01 грн |
100+ | 5.19 грн |
245+ | 3.65 грн |
673+ | 3.45 грн |
1000+ | 3.35 грн |
2500+ | 3.31 грн |
BZX85C33 R0G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 33V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 33V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 33V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 33V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
на замовлення 275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 7.31 грн |
100+ | 5.71 грн |
200+ | 4.63 грн |
MUR360S |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
MUR360SBH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
MUR360SH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMBJ20CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
на замовлення 2991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.57 грн |
17+ | 23.26 грн |
50+ | 19.37 грн |
97+ | 9.23 грн |
267+ | 8.69 грн |
MUR840H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZX55C7V5 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
115+ | 3.61 грн |
140+ | 2.77 грн |
415+ | 2.20 грн |
BZX55C2V7 R0 |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 10µA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
99+ | 4.16 грн |
137+ | 2.80 грн |
423+ | 2.16 грн |
BZX55C2V7 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO35
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 10µA
на замовлення 587 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.53 грн |
31+ | 12.51 грн |
53+ | 7.32 грн |
100+ | 6.07 грн |
250+ | 4.68 грн |
414+ | 2.20 грн |
P4SMA15A M2G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Mounting: SMD
Case: SMA
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Mounting: SMD
Case: SMA
Tolerance: ±5%
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.14 грн |
35+ | 10.98 грн |
100+ | 9.69 грн |
101+ | 8.85 грн |
SS115L |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.96 грн |
19+ | 20.74 грн |
100+ | 13.42 грн |
104+ | 8.54 грн |
286+ | 8.08 грн |
TSG65N110CE RVG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
TSG65N190CR RVG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
TSG65N195CE RVG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
SMF15A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 16.7V; 8.2A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 8.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
P4SMA6.8CA |
![]() ![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 40A
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 6.46V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; bidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 40A
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 6.46V
товару немає в наявності
В кошику
од. на суму грн.
P4SMA6.8A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 6.46V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Breakdown voltage: 6.46V
товару немає в наявності
В кошику
од. на суму грн.
P4SMA15A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
P4SMA15AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Application: automotive industry
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Application: automotive industry
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
P4SMA15CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Mounting: SMD
Max. off-state voltage: 12.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 20A
Breakdown voltage: 14.3V
Type of diode: TVS
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
SMCJ40A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
товару немає в наявності
В кошику
од. на суму грн.
SMCJ40AH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 24A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMAJ58CA |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
SMAJ58A |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
MBR20200CT |
![]() ![]() ![]() ![]() ![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.70 грн |
10+ | 44.16 грн |
33+ | 27.30 грн |
90+ | 25.78 грн |
SS36H |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 45.99 грн |
15+ | 26.23 грн |
73+ | 12.35 грн |
199+ | 11.67 грн |
SS36LWH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SD103CW RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
на замовлення 2465 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.17 грн |
55+ | 7.02 грн |
100+ | 5.57 грн |
170+ | 5.34 грн |
460+ | 5.03 грн |
SD103BW RHG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward impulse current: 1.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.35A
Semiconductor structure: single diode
Max. forward impulse current: 1.5A
на замовлення 705 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.32 грн |
54+ | 7.09 грн |
100+ | 4.71 грн |
310+ | 2.86 грн |
SS16L |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
45+ | 8.54 грн |
100+ | 6.39 грн |
203+ | 4.41 грн |
557+ | 4.16 грн |
SS16M |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
6A60G |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Max. forward impulse current: 250A
Max. forward voltage: 1V
Max. off-state voltage: 0.6kV
Capacitance: 60pF
Semiconductor structure: single diode
Load current: 6A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 250A; R6; Ufmax: 1V
Case: R6
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Max. forward impulse current: 250A
Max. forward voltage: 1V
Max. off-state voltage: 0.6kV
Capacitance: 60pF
Semiconductor structure: single diode
Load current: 6A
на замовлення 79 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.21 грн |
15+ | 25.93 грн |
16+ | 23.95 грн |
25+ | 22.88 грн |
45+ | 19.98 грн |
SS34FSH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD128F
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.43 грн |
34+ | 11.44 грн |
100+ | 10.29 грн |
114+ | 7.86 грн |
312+ | 7.44 грн |
SS34H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.71 грн |
24+ | 16.24 грн |
72+ | 12.42 грн |
198+ | 11.74 грн |
SS34LWH |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
на замовлення 498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.64 грн |
27+ | 14.41 грн |
100+ | 8.69 грн |
140+ | 6.41 грн |
384+ | 6.02 грн |
MBR2545CT |
![]() ![]() ![]() ![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.45 грн |
10+ | 81.60 грн |
18+ | 50.33 грн |
49+ | 47.28 грн |
SS14L |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.71 грн |
30+ | 13.12 грн |
35+ | 11.21 грн |
100+ | 6.86 грн |
201+ | 4.42 грн |
554+ | 4.19 грн |
SS14M |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.14 грн |
62+ | 6.18 грн |
100+ | 3.93 грн |
355+ | 2.52 грн |
975+ | 2.38 грн |