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TSM3N80CI C0G TSM3N80CI C0G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 32W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CZ C0G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
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BZD27C18P TAIWAN SEMICONDUCTOR BZD27C SERIES_AB2103.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
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BZD27C18PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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TS1935BCX5 RFG TS1935BCX5 RFG TAIWAN SEMICONDUCTOR Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
5+89.31 грн
25+78.94 грн
Мінімальне замовлення: 5
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TSM8N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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MBR1545CTH TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
50+55.82 грн
Мінімальне замовлення: 50
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BZT52B5V6-G RHG BZT52B5V6-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 5524 шт:
термін постачання 21-30 дні (днів)
45+9.79 грн
85+4.98 грн
105+3.96 грн
500+3.83 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BZT52B5V6S RRG BZT52B5V6S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)
85+5.15 грн
115+3.49 грн
250+2.77 грн
1000+2.54 грн
Мінімальне замовлення: 85
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BZX55B5V6 A0G BZX55B5V6 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
145+3.05 грн
150+2.70 грн
500+2.38 грн
Мінімальне замовлення: 145
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SMCJ30A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
12+36.07 грн
15+26.31 грн
Мінімальне замовлення: 12
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TSD30H120CW MNG TAIWAN SEMICONDUCTOR TSD30H100CW%20SERIES_C15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: D2PAK
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KBU1006G KBU1006G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
3+158.86 грн
10+98.08 грн
25+83.73 грн
Мінімальне замовлення: 3
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KBU1007G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DBL207G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B87C75E9EC0D6&compId=DBL201G_ser.pdf?ci_sign=f230df7a06e097c54b6e99b72db9c7e29b94bb02 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Electrical mounting: THT
Version: DIP
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HS1ML HS1ML TAIWAN SEMICONDUCTOR HS1AL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
на замовлення 337 шт:
термін постачання 21-30 дні (днів)
17+25.76 грн
26+15.55 грн
100+9.73 грн
Мінімальне замовлення: 17
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HS1MAL TAIWAN SEMICONDUCTOR HS1DAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MALH TAIWAN SEMICONDUCTOR HS1DALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MH TAIWAN SEMICONDUCTOR HS1AH SERIES_B2401.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MLW TAIWAN SEMICONDUCTOR HS1DLW SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MLWH TAIWAN SEMICONDUCTOR HS1DLWH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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MBRI30100CT TAIWAN SEMICONDUCTOR MBRI30100CT_F2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; Ufmax: 940mV
Type of diode: Schottky rectifying
Case: I2PAK
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Kind of package: tube
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P6KE82A R0 P6KE82A R0 TAIWAN SEMICONDUCTOR P6KE_SER.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Tolerance: ±5%
на замовлення 4380 шт:
термін постачання 21-30 дні (днів)
120+3.61 грн
125+3.19 грн
135+3.00 грн
500+2.89 грн
Мінімальне замовлення: 120
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SMAJ188A TAIWAN SEMICONDUCTOR SMAJ SERIES_U2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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SMAJ188CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_smaj_datasheet.pdf.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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RS1B TAIWAN SEMICONDUCTOR RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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T15JA05G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA06G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA07G-K TAIWAN SEMICONDUCTOR T15JA07G-K_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 1kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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SMAJ24CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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MBR1045 MBR1045 TAIWAN SEMICONDUCTOR MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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MBRF30200CT MBRF30200CT TAIWAN SEMICONDUCTOR littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Max. forward voltage: 1.05V
Load current: 15A x2
Max. forward impulse current: 200A
Max. off-state voltage: 200V
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
4+123.66 грн
10+103.66 грн
50+96.48 грн
Мінімальне замовлення: 4
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MBR1660 MBR1660 TAIWAN SEMICONDUCTOR MBR1660.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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MBR1660 MBR1660 TAIWAN SEMICONDUCTOR MBR1650-1660%20MBRB1650-1660%20%20N0728%20REV.A.pdf MBR1635%20-%2060.pdf FAIRS27511-1.pdf?t.download=true&u=5oefqw MBR1630_1660_Rev8.pdf MBR1635 SERIES_K2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
7+66.98 грн
10+48.08 грн
25+42.02 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
TESDU12V RGG TESDU12V RGG TAIWAN SEMICONDUCTOR TESDUxx.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
20+21.47 грн
29+13.79 грн
100+10.21 грн
Мінімальне замовлення: 20
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TESDU24V RGG TESDU24V RGG TAIWAN SEMICONDUCTOR TESDUxx.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
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TS4448 RGG TAIWAN SEMICONDUCTOR TS4448 RG_H1612.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
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TSM085NB03CV RGG TAIWAN SEMICONDUCTOR TSM085NB03CV_A2010.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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TSM3N80CI C0G TSM3N80_F1706.pdf
TSM3N80CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 32W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CZ C0G TSM3N80_F1706.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Gate charge: 19nC
Power dissipation: 94W
On-state resistance: 4.2Ω
Gate-source voltage: ±30V
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
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BZD27C18P BZD27C SERIES_AB2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: subSMA
Semiconductor structure: single diode
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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TS1935BCX5 RFG
TS1935BCX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Output current: 1.9A
Case: SOT25
Mounting: SMD
Frequency: 1.2MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Duty cycle factor: 0...87%
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.31 грн
25+78.94 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSM8N80CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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MBR1545CTH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+55.82 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52B5V6-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B5V6-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 5.6V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 5524 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+9.79 грн
85+4.98 грн
105+3.96 грн
500+3.83 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BZT52B5V6S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B5V6S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
85+5.15 грн
115+3.49 грн
250+2.77 грн
1000+2.54 грн
Мінімальне замовлення: 85
В кошику  од. на суму  грн.
BZX55B5V6 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B5V6 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
145+3.05 грн
150+2.70 грн
500+2.38 грн
Мінімальне замовлення: 145
В кошику  од. на суму  грн.
SMCJ30A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.07 грн
15+26.31 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TSD30H120CW MNG TSD30H100CW%20SERIES_C15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 30A
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.84V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 200A
Semiconductor structure: common cathode; double
Case: D2PAK
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KBU1006G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
KBU1006G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+158.86 грн
10+98.08 грн
25+83.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBU1007G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F9D584FF480D6&compId=KBU1007G_ser.pdf?ci_sign=6aa55091fff9884c108af622aa5ba7e770e54486
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DBL207G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9B87C75E9EC0D6&compId=DBL201G_ser.pdf?ci_sign=f230df7a06e097c54b6e99b72db9c7e29b94bb02
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Electrical mounting: THT
Version: DIP
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HS1ML HS1AL SERIES_C2103.pdf
HS1ML
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; subSMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
на замовлення 337 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.76 грн
26+15.55 грн
100+9.73 грн
Мінімальне замовлення: 17
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HS1MAL HS1DAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MALH HS1DALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MH HS1AH SERIES_B2401.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS1MLW HS1DLW SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS1MLWH HS1DLWH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123W; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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MBRI30100CT MBRI30100CT_F2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; I2PAK; Ufmax: 940mV
Type of diode: Schottky rectifying
Case: I2PAK
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.94V
Kind of package: tube
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P6KE82A R0 P6KE_SER.pdf
P6KE82A R0
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Tolerance: ±5%
на замовлення 4380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
120+3.61 грн
125+3.19 грн
135+3.00 грн
500+2.89 грн
Мінімальне замовлення: 120
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SMAJ188A SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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SMAJ188CA littelfuse_tvs_diode_smaj_datasheet.pdf.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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RS1B RS1A-RS1M%20N0988%20REV.B.pdf rs1m-d.pdf RS1A SERIES_M2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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T15JA05G-K T15JA07G-K_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA06G-K T15JA07G-K_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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T15JA07G-K T15JA07G-K_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 208A
Case: TS-6PL
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 15A
Max. off-state voltage: 1kV
Max. forward impulse current: 208A
Features of semiconductor devices: glass passivated
Leads: flat pin
Version: flat
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SMAJ24CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
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MBR1045 MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf MBR1035 SERIES_M2103.pdf
MBR1045
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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MBRF30200CT littelfuse_power_semiconductor_schottky_diode_mbrf30200ct_datasheet.pdf?assetguid=326d14e5-aee8-4008-9c6a-fe82abc7599f
MBRF30200CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO220FP; Ufmax: 1.05V
Semiconductor structure: common cathode; double
Case: TO220FP
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Max. forward voltage: 1.05V
Load current: 15A x2
Max. forward impulse current: 200A
Max. off-state voltage: 200V
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.66 грн
10+103.66 грн
50+96.48 грн
Мінімальне замовлення: 4
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MBR1660 MBR1660.pdf
MBR1660
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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MBR1660 MBR1650-1660%20MBRB1650-1660%20%20N0728%20REV.A.pdf MBR1635%20-%2060.pdf FAIRS27511-1.pdf?t.download=true&u=5oefqw MBR1630_1660_Rev8.pdf MBR1635 SERIES_K2103.pdf
MBR1660
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.98 грн
10+48.08 грн
25+42.02 грн
Мінімальне замовлення: 7
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TESDU12V RGG TESDUxx.pdf
TESDU12V RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 25W; 13V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 13V
Peak pulse power dissipation: 25W
Case - inch: 0201
Case - mm: 0603
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.47 грн
29+13.79 грн
100+10.21 грн
Мінімальне замовлення: 20
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TESDU24V RGG TESDUxx.pdf
TESDU24V RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 47W; 25V; bidirectional; reel,tape; Case: 0201
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Kind of package: reel; tape
Leakage current: 2µA
Breakdown voltage: 25V
Peak pulse power dissipation: 47W
Case - inch: 0201
Case - mm: 0603
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TS4448 RGG TS4448 RG_H1612.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 9ns; 0603; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 9pF
Reverse recovery time: 9ns
Power dissipation: 0.15W
Features of semiconductor devices: fast switching
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TSM085NB03CV RGG TSM085NB03CV_A2010.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; 52W; PDFN33
Case: PDFN33
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 8.5mΩ
Power dissipation: 52W
Drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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