Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (67490) > Сторінка 1113 з 1125
Фото | Назва | Виробник | Інформація |
Доступність |
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RS2M | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 5966 шт: термін постачання 21-30 дні (днів) |
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RS2MA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS70-04 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Reverse recovery time: 5ns Kind of package: reel; tape Capacitance: 2pF Max. forward impulse current: 0.1A |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BAS316 RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape Semiconductor structure: single diode Mounting: SMD Type of diode: switching Capacitance: 1.5pF Reverse recovery time: 4ns Power dissipation: 0.2W Load current: 0.25A Max. off-state voltage: 100V Case: SOD323 Kind of package: reel; tape Features of semiconductor devices: fast switching |
на замовлення 5450 шт: термін постачання 21-30 дні (днів) |
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MBRS2060CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape Semiconductor structure: common cathode; double Max. off-state voltage: 60V Load current: 10A x2 Case: D2PAK Type of diode: Schottky rectifying Max. load current: 20A Mounting: SMD Kind of package: reel; tape |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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SK36B | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ES1J | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Features of semiconductor devices: superfast switching |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
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ES1JL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: subSMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 8pF Features of semiconductor devices: glass passivated; ultrafast switching |
на замовлення 1350 шт: термін постачання 21-30 дні (днів) |
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BAW56 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ30CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
US1M | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBJ18CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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ES1B | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Features of semiconductor devices: superfast switching Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V Case: SMA |
на замовлення 6630 шт: термін постачання 21-30 дні (днів) |
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SMBJ28A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBR20100CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU605 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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US1JH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Case: SMA Features of semiconductor devices: superfast switching Semiconductor structure: single diode Mounting: SMD Capacitance: 10pF Reverse recovery time: 75ns Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS12L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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GBPC3504 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX55C10 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA Kind of package: tape |
на замовлення 1016 шт: термін постачання 21-30 дні (днів) |
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BZX55C10 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA Kind of package: tape |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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SMDJ30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: SMDJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAV99 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSM4806CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Case: SOP8 Mounting: SMD Kind of package: tape Polarisation: unipolar Drain-source voltage: 20V Gate-source voltage: ±8V Drain current: 28A Gate charge: 12.3nC On-state resistance: 20mΩ Power dissipation: 2W Kind of channel: enhancement Type of transistor: N-MOSFET |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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SMAJ24CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ24CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMF5.0A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSCR420CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 40V DC Power dissipation: 1W Operating current: 0.3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRS2545CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 12.5A x2 Semiconductor structure: common cathode; double Max. load current: 25A Kind of package: reel; tape |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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BZX55C15 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 1249 шт: термін постачання 21-30 дні (днів) |
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BZX55C15 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 610 шт: термін постачання 21-30 дні (днів) |
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: tape Kind of channel: enhancement |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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GBU406 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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1N5819 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 30A Kind of package: tape Capacitance: 55pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ26CAH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Tolerance: ±5% Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ36CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ36CAH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LL4006G L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Case: MELF Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.9nC Kind of package: tape Kind of channel: enhancement |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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SK210A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6KE82A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Manufacturer series: P6KE Max. forward impulse current: 5.5A |
на замовлення 4400 шт: термін постачання 21-30 дні (днів) |
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ES1D | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 16pF Case: SMA Max. forward impulse current: 30A Features of semiconductor devices: fast switching Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ33A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 6493 шт: термін постачання 21-30 дні (днів) |
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SMAJ33AH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TS103ACS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; 3÷18VDC; reel,tape Type of integrated circuit: operational amplifier Case: SOP8 Number of channels: 2 Mounting: SMT Operating temperature: -40...85°C Kind of package: reel; tape Input offset voltage: 5mV Slew rate: 0.5V/μs Voltage supply range: 3...18V DC Bandwidth: 1MHz |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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SMBJ24CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR2060CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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1N5818 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V; tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: tape Capacitance: 55pF |
на замовлення 656 шт: термін постачання 21-30 дні (днів) |
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TS5204CX33 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 80mA Case: SOT23 Mounting: SMD Manufacturer series: TS5204 Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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BZX85C8V2 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 8.2V; 25mA; tape; DO41; single diode; Ir: 1uA Type of diode: Zener Semiconductor structure: single diode Mounting: THT Leakage current: 1µA Zener current: 25mA Power dissipation: 1.3W Tolerance: ±5% Kind of package: tape Zener voltage: 8.2V Case: DO41 |
на замовлення 381 шт: термін постачання 21-30 дні (днів) |
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BZT52C9V1 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.45µA |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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SMBJ20CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMBJ Leakage current: 1µA |
на замовлення 2741 шт: термін постачання 21-30 дні (днів) |
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MUR840H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P4SMA15A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape Manufacturer series: P4SMA Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Tolerance: ±5% Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 20A Peak pulse power dissipation: 0.4kW Case: SMA |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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SMAJ58A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR20200CT | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 1.1V Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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SS36H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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SS36LWH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SD103CW RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape Mounting: SMD Case: SOD123 Semiconductor structure: single diode Load current: 0.35A Max. forward impulse current: 1.5A Max. forward voltage: 0.6V Max. off-state voltage: 20V Kind of package: reel; tape Type of diode: Schottky switching |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
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RS2M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 5966 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.65 грн |
31+ | 12.93 грн |
50+ | 9.92 грн |
100+ | 8.81 грн |
178+ | 5.24 грн |
487+ | 5.00 грн |
3000+ | 4.76 грн |
RS2MA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMA; Ifsm: 50A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BAS70-04 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Reverse recovery time: 5ns
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.07A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Reverse recovery time: 5ns
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
67+ | 6.47 грн |
93+ | 4.28 грн |
133+ | 2.99 грн |
250+ | 2.62 грн |
500+ | 2.38 грн |
546+ | 1.71 грн |
1502+ | 1.62 грн |
BAS316 RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: switching
Capacitance: 1.5pF
Reverse recovery time: 4ns
Power dissipation: 0.2W
Load current: 0.25A
Max. off-state voltage: 100V
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; 200mW; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: switching
Capacitance: 1.5pF
Reverse recovery time: 4ns
Power dissipation: 0.2W
Load current: 0.25A
Max. off-state voltage: 100V
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5450 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.86 грн |
114+ | 3.49 грн |
164+ | 2.43 грн |
250+ | 1.94 грн |
500+ | 1.73 грн |
928+ | 1.01 грн |
2550+ | 0.95 грн |
MBRS2060CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 60V
Load current: 10A x2
Case: D2PAK
Type of diode: Schottky rectifying
Max. load current: 20A
Mounting: SMD
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Semiconductor structure: common cathode; double
Max. off-state voltage: 60V
Load current: 10A x2
Case: D2PAK
Type of diode: Schottky rectifying
Max. load current: 20A
Mounting: SMD
Kind of package: reel; tape
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.94 грн |
10+ | 54.27 грн |
22+ | 42.45 грн |
61+ | 40.22 грн |
SK36B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
ES1J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
на замовлення 144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.92 грн |
27+ | 14.84 грн |
100+ | 9.60 грн |
ES1JL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 8pF
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; subSMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 8pF
Features of semiconductor devices: glass passivated; ultrafast switching
на замовлення 1350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.34 грн |
26+ | 15.63 грн |
100+ | 10.63 грн |
159+ | 5.87 грн |
435+ | 5.55 грн |
BAW56 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
SMAJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
US1M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
SMBJ18CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику
од. на суму грн.
P6SMB15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.74 грн |
20+ | 20.79 грн |
84+ | 11.11 грн |
ES1B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
на замовлення 6630 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.07 грн |
27+ | 15.07 грн |
100+ | 8.56 грн |
310+ | 3.01 грн |
850+ | 2.86 грн |
SMBJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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MBR20100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
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GBU605 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.07 грн |
10+ | 55.54 грн |
US1JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 75ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 10pF
Reverse recovery time: 75ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Application: automotive industry
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SS12L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.94 грн |
39+ | 10.23 грн |
GBPC3504 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Max. forward voltage: 1.1V
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BZX55C10 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: tape
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.40 грн |
61+ | 6.51 грн |
71+ | 5.63 грн |
102+ | 3.93 грн |
406+ | 2.29 грн |
BZX55C10 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Kind of package: tape
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.36 грн |
140+ | 2.90 грн |
440+ | 2.21 грн |
SMDJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3V; 62A; unidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
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BAV99 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ifsm: 2A; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
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TSM4806CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 28A
Gate charge: 12.3nC
On-state resistance: 20mΩ
Power dissipation: 2W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Drain-source voltage: 20V
Gate-source voltage: ±8V
Drain current: 28A
Gate charge: 12.3nC
On-state resistance: 20mΩ
Power dissipation: 2W
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 162 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.18 грн |
17+ | 24.04 грн |
54+ | 17.30 грн |
149+ | 16.34 грн |
SMAJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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SMF5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 6.4V; 21.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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TSCR420CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
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MBRS2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Max. load current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 12.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Max. load current: 25A
Kind of package: reel; tape
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 99.11 грн |
10+ | 79.34 грн |
15+ | 63.47 грн |
41+ | 59.50 грн |
BZX55C15 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1249 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.96 грн |
50+ | 7.93 грн |
100+ | 4.77 грн |
407+ | 2.29 грн |
1118+ | 2.17 грн |
BZX55C15 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 610 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
99+ | 4.33 грн |
137+ | 2.90 грн |
423+ | 2.21 грн |
TSM320N03CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.32 грн |
GBU406 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 100.82 грн |
10+ | 59.34 грн |
20+ | 52.20 грн |
22+ | 43.64 грн |
1N5819 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
Capacitance: 55pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Kind of package: tape
Capacitance: 55pF
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SMAJ26CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
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SMAJ36CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ36CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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LL4006G L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; MELF; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Case: MELF
Max. forward impulse current: 30A
Kind of package: reel; tape
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TSM320N03CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.85 грн |
14+ | 29.36 грн |
25+ | 22.14 грн |
49+ | 19.36 грн |
133+ | 18.33 грн |
SK210A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
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P6KE82A R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Max. forward impulse current: 5.5A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 82V; 5.5A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6KE
Max. forward impulse current: 5.5A
на замовлення 4400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.59 грн |
125+ | 3.17 грн |
135+ | 2.98 грн |
500+ | 2.86 грн |
ES1D |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 16pF
Case: SMA
Max. forward impulse current: 30A
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 16pF
Case: SMA
Max. forward impulse current: 30A
Features of semiconductor devices: fast switching
Kind of package: reel; tape
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SMAJ33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 6493 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.63 грн |
24+ | 17.14 грн |
100+ | 9.53 грн |
254+ | 3.67 грн |
699+ | 3.47 грн |
SMAJ33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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TS103ACS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; 3÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOP8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; 3÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOP8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.85 грн |
14+ | 28.88 грн |
25+ | 25.47 грн |
SMBJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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MBR2060CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.57 грн |
8+ | 56.49 грн |
21+ | 45.38 грн |
1N5818 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: tape
Capacitance: 55pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V; tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: tape
Capacitance: 55pF
на замовлення 656 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
31+ | 14.18 грн |
33+ | 12.14 грн |
100+ | 6.78 грн |
225+ | 4.14 грн |
617+ | 3.92 грн |
TS5204CX33 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23
Mounting: SMD
Manufacturer series: TS5204
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23
Mounting: SMD
Manufacturer series: TS5204
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.31 грн |
10+ | 45.94 грн |
25+ | 37.69 грн |
41+ | 23.25 грн |
111+ | 21.98 грн |
BZX85C8V2 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: THT
Leakage current: 1µA
Zener current: 25mA
Power dissipation: 1.3W
Tolerance: ±5%
Kind of package: tape
Zener voltage: 8.2V
Case: DO41
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: THT
Leakage current: 1µA
Zener current: 25mA
Power dissipation: 1.3W
Tolerance: ±5%
Kind of package: tape
Zener voltage: 8.2V
Case: DO41
на замовлення 381 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.51 грн |
27+ | 14.92 грн |
100+ | 8.73 грн |
204+ | 4.60 грн |
BZT52C9V1 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.45µA
на замовлення 462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.40 грн |
73+ | 5.47 грн |
117+ | 3.42 грн |
250+ | 2.85 грн |
358+ | 2.61 грн |
SMBJ20CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMBJ
Leakage current: 1µA
на замовлення 2741 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.76 грн |
15+ | 26.66 грн |
16+ | 25.39 грн |
50+ | 21.18 грн |
98+ | 9.60 грн |
268+ | 9.04 грн |
MUR840H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Application: automotive industry
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P4SMA15A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Peak pulse power dissipation: 0.4kW
Case: SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Manufacturer series: P4SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Peak pulse power dissipation: 0.4kW
Case: SMA
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.67 грн |
35+ | 11.42 грн |
100+ | 10.08 грн |
101+ | 9.28 грн |
SMAJ58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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MBR20200CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220AB; Ufmax: 1.1V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 84.59 грн |
10+ | 58.87 грн |
33+ | 28.40 грн |
91+ | 26.82 грн |
SS36H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.85 грн |
15+ | 27.29 грн |
73+ | 12.85 грн |
200+ | 12.14 грн |
SS36LWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SD103CW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Load current: 0.35A
Max. forward impulse current: 1.5A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Kind of package: reel; tape
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.35A; reel,tape
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Load current: 0.35A
Max. forward impulse current: 1.5A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Kind of package: reel; tape
Type of diode: Schottky switching
на замовлення 2462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
45+ | 9.91 грн |
65+ | 6.19 грн |
100+ | 4.92 грн |
500+ | 4.68 грн |