Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66422) > Сторінка 1108 з 1108
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TSM950N10CW RPG | TAIWAN SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.1A Power dissipation: 9W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
MBR20200CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 1V; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 1V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM950N10CW RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.1A; 9W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.1A
Power dissipation: 9W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MBR20200CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 150A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.