Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49222) > Сторінка 819 з 821
| Фото | Назва | Виробник | Інформація |
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SS36 | TAIWAN SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BAV99 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.45A Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS431BCX RFG | TAIWAN SEMICONDUCTOR |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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BZX85C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 4.3V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.3V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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TSM2307CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Gate charge: 15nC On-state resistance: 95mΩ Power dissipation: 0.8W Gate-source voltage: ±20V Kind of package: tape |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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TS4264CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...150°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±2% Output voltage: 5V Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TS4264GCW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...150°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±3% Output voltage: 5V Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMA4F47AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 52.5÷58.1V; 5.2A; unidirectional; ±5%; SMA flat Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 47V Breakdown voltage: 52.5...58.1V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMA4F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: tape Kind of channel: enhancement |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| MUR440SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 4A; 50ns; SMC; Ufmax: 1.25V; reel,tape Application: automotive industry Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Mounting: SMD Features of semiconductor devices: superfast switching Reverse recovery time: 50ns Max. forward voltage: 1.25V Load current: 4A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SF24G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns Semiconductor structure: single diode Case: DO15 Mounting: THT Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 2A Max. off-state voltage: 200V Max. forward impulse current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SF24G-T | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns Semiconductor structure: single diode Case: DO15 Mounting: THT Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 2A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ70A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 77.8V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55B12 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 810 шт: термін постачання 14-30 дні (днів) |
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| MURF1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: ITO220AB Features of semiconductor devices: ultrafast switching Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX85C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 47V; tape; DO41; single diode Tolerance: ±5% Semiconductor structure: single diode Mounting: THT Kind of package: tape Type of diode: Zener Case: DO41 Power dissipation: 1.3W Zener voltage: 47V |
на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; tape; DO35; single diode Tolerance: ±5% Semiconductor structure: single diode Mounting: THT Kind of package: tape Type of diode: Zener Case: DO35 Power dissipation: 0.5W Zener voltage: 47V |
на замовлення 419 шт: термін постачання 14-30 дні (днів) |
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| BA158G-K | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; DO41; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: DO41 Reverse recovery time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSCR420CX6H RFG | TAIWAN SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 40V DC Power dissipation: 1W Operating current: 0.3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ43A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX85C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 16V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1085 шт: термін постачання 14-30 дні (днів) |
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TESDU5V0 RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.1V Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Peak pulse power dissipation: 75W |
на замовлення 201 шт: термін постачання 14-30 дні (днів) |
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| SMCJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C18 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 18V; tape; DO35; single diode Tolerance: ±5% Mounting: THT Power dissipation: 0.5W Zener voltage: 18V Kind of package: tape Semiconductor structure: single diode Case: DO35 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52B5V1S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 440 шт: термін постачання 14-30 дні (днів) |
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| BZT52B5V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SS320 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Max. forward impulse current: 75A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 440 шт: термін постачання 14-30 дні (днів) |
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| SS320LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Case: SOD123W Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SS320H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Max. forward impulse current: 70A Application: automotive industry Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C3V0 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 696 шт: термін постачання 14-30 дні (днів) |
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SR310 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V Max. forward impulse current: 80A Kind of package: tape |
на замовлення 278 шт: термін постачання 14-30 дні (днів) |
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RB751V-40 RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape Capacitance: 2pF Max. forward impulse current: 0.2A |
на замовлення 655 шт: термін постачання 14-30 дні (днів) |
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| SMCJ45A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 21A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LL5817 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 434 шт: термін постачання 14-30 дні (днів) |
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LL5818 L0 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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LL5818 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.875V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 399 шт: термін постачання 14-30 дні (днів) |
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| SFF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns Mounting: THT Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Reverse recovery time: 35ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns Mounting: THT Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 395 шт: термін постачання 14-30 дні (днів) |
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| SF3002PT | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 30A; TO247AD; 35ns Case: TO247AD Mounting: THT Max. off-state voltage: 0.1kV Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMF33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 3.8A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| HDBL107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP Case: DBL Kind of package: tube Version: DIP Features of semiconductor devices: glass passivated Electrical mounting: THT Type of bridge rectifier: single-phase Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 50A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR2560CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. load current: 25A Max. forward impulse current: 200A Kind of package: tube |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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TSM4925DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8 Kind of package: tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Case: SOP8 Drain-source voltage: -30V Drain current: -7.1A Gate charge: 70nC On-state resistance: 25mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55C39 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 39V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 895 шт: термін постачання 14-30 дні (днів) |
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| HERF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Reverse recovery time: 80ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1166 шт: термін постачання 14-30 дні (днів) |
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BZX55C36 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 36V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 175 шт: термін постачання 14-30 дні (днів) |
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BZX55C33 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 33V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 215 шт: термін постачання 14-30 дні (днів) |
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| GBU1002 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM60NE180CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 63W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM60NE285CIT C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.5A Power dissipation: 56W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.285Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
SSL34 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.41V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 243 шт: термін постачання 14-30 дні (днів) |
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SSL34 V6G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.41V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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BYG20J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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| BYG20JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM70N1R4CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM70N1R4CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SS36 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BAV99 RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.45A
Features of semiconductor devices: fast switching
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В кошику
од. на суму грн.
| TS431BCX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 75 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.17 грн |
| 27+ | 15.55 грн |
| 32+ | 13.30 грн |
| 50+ | 11.56 грн |
| BZX85C4V3 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 52 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 28+ | 15.38 грн |
| TSM2307CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 95mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 95mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: tape
на замовлення 195 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.19 грн |
| TS4264CW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
товару немає в наявності
В кошику
од. на суму грн.
| TS4264GCW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±3%
Output voltage: 5V
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±3%
Output voltage: 5V
Input voltage: 5.5...45V
товару немає в наявності
В кошику
од. на суму грн.
| SMA4F47AH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 52.5÷58.1V; 5.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 47V
Breakdown voltage: 52.5...58.1V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 52.5÷58.1V; 5.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 47V
Breakdown voltage: 52.5...58.1V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
товару немає в наявності
В кошику
од. на суму грн.
| TSM320N03CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.08 грн |
| MUR440SH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Features of semiconductor devices: superfast switching
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Load current: 4A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Application: automotive industry
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Features of semiconductor devices: superfast switching
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Load current: 4A
Max. off-state voltage: 0.4kV
товару немає в наявності
В кошику
од. на суму грн.
| SF24G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 50A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 50A
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В кошику
од. на суму грн.
| SF24G-T |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 2A
Max. off-state voltage: 200V
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В кошику
од. на суму грн.
| SMAJ70A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8V; 3.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B12 A0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 810 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 145+ | 3.18 грн |
| 150+ | 2.82 грн |
| 500+ | 2.49 грн |
| MURF1620CTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: ITO220AB
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
Application: automotive industry
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В кошику
од. на суму грн.
| BZX85C47 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; tape; DO41; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Type of diode: Zener
Case: DO41
Power dissipation: 1.3W
Zener voltage: 47V
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; tape; DO41; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Type of diode: Zener
Case: DO41
Power dissipation: 1.3W
Zener voltage: 47V
на замовлення 129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.49 грн |
| 28+ | 15.05 грн |
| 100+ | 8.79 грн |
| BZX55C47 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; tape; DO35; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Type of diode: Zener
Case: DO35
Power dissipation: 0.5W
Zener voltage: 47V
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; tape; DO35; single diode
Tolerance: ±5%
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Type of diode: Zener
Case: DO35
Power dissipation: 0.5W
Zener voltage: 47V
на замовлення 419 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.54 грн |
| 155+ | 2.70 грн |
| BA158G-K |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; DO41; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику
од. на суму грн.
| TSCR420CX6H RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
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| SMCJ43A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZX85C16 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1085 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 7.16 грн |
| 100+ | 5.57 грн |
| 250+ | 4.91 грн |
| 1000+ | 4.57 грн |
| TESDU5V0 RGG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 75W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Peak pulse power dissipation: 75W
на замовлення 201 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.12 грн |
| 41+ | 10.23 грн |
| 100+ | 7.16 грн |
| SMCJ30AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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| BZX55C18 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; tape; DO35; single diode
Tolerance: ±5%
Mounting: THT
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: tape
Semiconductor structure: single diode
Case: DO35
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; tape; DO35; single diode
Tolerance: ±5%
Mounting: THT
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: tape
Semiconductor structure: single diode
Case: DO35
Type of diode: Zener
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| BZT52B5V1S RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.74 грн |
| 61+ | 6.90 грн |
| 103+ | 4.07 грн |
| 250+ | 3.30 грн |
| BZT52B5V1 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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| SS320 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 75A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 75A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.49 грн |
| 28+ | 14.97 грн |
| 100+ | 13.47 грн |
| 250+ | 12.47 грн |
| SS320LW |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Case: SOD123W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Case: SOD123W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| SS320H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
Application: automotive industry
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| BZX55C3V0 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 696 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.74 грн |
| 61+ | 6.82 грн |
| 102+ | 4.11 грн |
| 500+ | 2.88 грн |
| SR310 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 278 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.35 грн |
| 13+ | 33.75 грн |
| 15+ | 28.43 грн |
| 100+ | 15.96 грн |
| RB751V-40 RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.2A
на замовлення 655 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.91 грн |
| 43+ | 9.81 грн |
| 100+ | 6.09 грн |
| 500+ | 4.49 грн |
| SMCJ45A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 21A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 21A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| LL5817 L0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 434 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.65 грн |
| 100+ | 23.11 грн |
| LL5818 L0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 34 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.87 грн |
| 25+ | 22.70 грн |
| LL5818 L0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 399 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 19+ | 22.70 грн |
| 100+ | 20.04 грн |
| SFF1608GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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| SFF1604GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 35ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 35ns
Application: automotive industry
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| SFF1606GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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| BZX55C11 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 395 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.31 грн |
| 165+ | 2.54 грн |
| SF3002PT |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Max. off-state voltage: 0.1kV
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; TO247AD; 35ns
Case: TO247AD
Mounting: THT
Max. off-state voltage: 0.1kV
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 30A
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| SMF33A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
на замовлення 200 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.86 грн |
| 28+ | 15.05 грн |
| 100+ | 9.98 грн |
| HDBL107G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Type of bridge rectifier: single-phase
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Type of bridge rectifier: single-phase
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
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| MBR2560CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 25A
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 25A
Max. forward impulse current: 200A
Kind of package: tube
на замовлення 100 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.90 грн |
| 10+ | 64.02 грн |
| 50+ | 59.86 грн |
| 100+ | 55.70 грн |
| TSM4925DCS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SOP8
Drain-source voltage: -30V
Drain current: -7.1A
Gate charge: 70nC
On-state resistance: 25mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SOP8
Drain-source voltage: -30V
Drain current: -7.1A
Gate charge: 70nC
On-state resistance: 25mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
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| BZX55C39 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 895 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.31 грн |
| 165+ | 2.54 грн |
| 500+ | 2.24 грн |
| HERF1608GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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| BZX55C3V9 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1166 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.43 грн |
| 47+ | 8.90 грн |
| 100+ | 5.33 грн |
| 250+ | 4.27 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.01 грн |
| BZX55C36 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 175 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.54 грн |
| 155+ | 2.70 грн |
| BZX55C33 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 215 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.54 грн |
| 155+ | 2.70 грн |
| GBU1002 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| TSM60NE180CIT C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 63W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 63W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| TSM60NE285CIT C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Power dissipation: 56W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Power dissipation: 56W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| SSL34 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.98 грн |
| 17+ | 25.02 грн |
| 100+ | 19.12 грн |
| SSL34 V6G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 68 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.40 грн |
| 15+ | 28.02 грн |
| 25+ | 24.78 грн |
| BYG20J |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 390 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 25+ | 17.13 грн |
| 100+ | 11.47 грн |
| BYG20JH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
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| TSM100N06CZ C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N1R4CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N1R4CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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