Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49833) > Сторінка 824 з 831
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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BZX55C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 16V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||||||||
| SMAJ43A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SK320B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Case: SMB Kind of package: reel; tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Max. forward impulse current: 70A |
на замовлення 966 шт: термін постачання 14-30 дні (днів) |
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SK320A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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SK320BH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Application: automotive industry Case: SMB Kind of package: reel; tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Max. forward impulse current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK320AH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBS34 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 40V; If: 3A; Ifsm: 80A; ABS Max. off-state voltage: 40V Load current: 3A Case: ABS Max. forward voltage: 0.5V Max. forward impulse current: 80A Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Features of semiconductor devices: Schottky |
на замовлення 1172 шт: термін постачання 14-30 дні (днів) |
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| P4SMA15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| P4SMA15AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUR820 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns Mounting: THT Type of diode: rectifying Kind of package: tube Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward voltage: 0.975V Load current: 8A Max. forward impulse current: 100A Max. off-state voltage: 200V Case: TO220AC |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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| MUR820H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns Mounting: THT Type of diode: rectifying Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Reverse recovery time: 25ns Load current: 8A Max. off-state voltage: 200V Application: automotive industry Case: TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBRI20100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.95V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZV55C24 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF glass; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: reel; tape Case: MiniMELF glass Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
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SMBJ7V5CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 48A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 48A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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US1J F3 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
на замовлення 392 шт: термін постачання 14-30 дні (днів) |
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| P4SMA15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Max. forward impulse current: 20A Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZX55C20 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1077 шт: термін постачання 14-30 дні (днів) |
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| TLD5S15AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3.6kW; 16.7÷18.5V; 148A; unidirectional; ±5%; DO218AB Manufacturer series: TLD5S Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 10µA Tolerance: ±5% Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 148A Peak pulse power dissipation: 3.6kW Application: automotive industry Kind of package: reel; tape Case: DO218AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMA4S12AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SOD128 Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.4...14.8V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SOD128 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMA4S Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMA4F12AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.4...14.8V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMA flat Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMA4F Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Power dissipation: 40W Case: IPAK On-state resistance: 34mΩ Mounting: THT Gate charge: 16.6nC Kind of channel: enhancement Kind of package: tube Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TS103ACS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Type of integrated circuit: operational amplifier Case: SOP8 Operating temperature: -40...85°C Input offset voltage: 5mV Slew rate: 0.5V/μs Voltage supply range: 3...18V DC Bandwidth: 1MHz |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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BZX85C4V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 4.7V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.7V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| SMAJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMAJ30CA M2G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.3A; bidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Leakage current: 1µA |
на замовлення 55000 шт: термін постачання 14-30 дні (днів) |
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BZX85C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 6.2V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.2V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 348 шт: термін постачання 14-30 дні (днів) |
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SR1060 C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V Mounting: THT Max. off-state voltage: 60V Case: TO220AB Max. forward impulse current: 120A Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Load current: 10A |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||
| MBRS2045CTH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBRS2045CT | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBRAD2045H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.73V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SMAJ48CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SMCJ64A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 15A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMBJ8V0CA | TAIWAN SEMICONDUCTOR |
Category: Diodes - Unclassified Description: SMBJ8V0CA |
на замовлення 18000 шт: термін постачання 14-30 дні (днів) |
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| SMBJ43A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMBJ43CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSM2302CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23 Mounting: SMD Type of transistor: N-MOSFET Kind of package: tape Case: SOT23 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Gate charge: 7.8nC On-state resistance: 65mΩ Power dissipation: 0.3W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| SMF12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 10.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HER1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Reverse recovery time: 50ns Application: automotive industry Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HER1006GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Reverse recovery time: 80ns Application: automotive industry Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HER1007GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Reverse recovery time: 80ns Application: automotive industry Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| HER1008GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Reverse recovery time: 80ns Application: automotive industry Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TSM500P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: tape Kind of channel: enhancement |
на замовлення 254 шт: термін постачання 14-30 дні (днів) |
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| SF14G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SF14G-K | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MBRAD15200DH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 7.5Ax2; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMF24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 5.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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1PGSMB5935 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 27V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 41 шт: термін постачання 14-30 дні (днів) |
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BZX85C27 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 27V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 460 шт: термін постачання 14-30 дні (днів) |
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BZX55B27 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 27V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||
| P4KE27CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 25.7V; 11A; bidirectional; DO41; 0.4kW; P4KE Mounting: THT Case: DO41 Type of diode: TVS Max. forward impulse current: 11A Max. off-state voltage: 23.1V Breakdown voltage: 25.7V Manufacturer series: P4KE Peak pulse power dissipation: 0.4kW Semiconductor structure: bidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 1.5SMC30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 38A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
BA159G-K | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; DO41; 500ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Reverse recovery time: 0.5µs Load current: 1A Max. off-state voltage: 1kV Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SMAJ10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2B | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape Case: SMB Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape Case: SMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V Case: thinSMA Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V Case: SOD128 Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 0.1kV Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ES2BA M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 35ns; DO214AC,SMA; 950mV Case: DO214AC; SMA Type of diode: rectifying Mounting: SMD Reverse recovery time: 35ns Max. forward voltage: 0.95V |
на замовлення 67500 шт: термін постачання 14-30 дні (днів) |
|
| BZX55C16 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| SMAJ43A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
В кошику
од. на суму грн.
| SK320B |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
на замовлення 966 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.93 грн |
| 22+ | 19.15 грн |
| 100+ | 12.93 грн |
| 500+ | 9.62 грн |
| SK320A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.11 грн |
| 24+ | 17.74 грн |
| 100+ | 11.44 грн |
| SK320BH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Application: automotive industry
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Application: automotive industry
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
товару немає в наявності
В кошику
од. на суму грн.
| SK320AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SBS34 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 40V; If: 3A; Ifsm: 80A; ABS
Max. off-state voltage: 40V
Load current: 3A
Case: ABS
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 40V; If: 3A; Ifsm: 80A; ABS
Max. off-state voltage: 40V
Load current: 3A
Case: ABS
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: Schottky
на замовлення 1172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.50 грн |
| 10+ | 47.01 грн |
| 100+ | 33.33 грн |
| 500+ | 25.54 грн |
| 1000+ | 23.96 грн |
| P4SMA15A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA15AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MUR820 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.975V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.975V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: TO220AC
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.40 грн |
| 11+ | 37.97 грн |
| 50+ | 34.41 грн |
| MUR820H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Reverse recovery time: 25ns
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Case: TO220AC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Reverse recovery time: 25ns
Load current: 8A
Max. off-state voltage: 200V
Application: automotive industry
Case: TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| MBRI20100CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.95V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BZV55C24 L0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: MiniMELF glass
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: MiniMELF glass
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| SMBJ7V5CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 48A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 48A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| US1J F3 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 392 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.50 грн |
| 23+ | 18.07 грн |
| 29+ | 14.51 грн |
| 100+ | 13.02 грн |
| P4SMA15CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.3V; 20A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 20A
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Peak pulse power dissipation: 0.4kW
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C20 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1077 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.61 грн |
| 57+ | 7.30 грн |
| 100+ | 4.44 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.65 грн |
| TLD5S15AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 16.7÷18.5V; 148A; unidirectional; ±5%; DO218AB
Manufacturer series: TLD5S
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 10µA
Tolerance: ±5%
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 148A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
Case: DO218AB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 16.7÷18.5V; 148A; unidirectional; ±5%; DO218AB
Manufacturer series: TLD5S
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 10µA
Tolerance: ±5%
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 148A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
Case: DO218AB
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| SMA4S12AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4S
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SOD128
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4S
Tolerance: ±5%
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| SMA4F12AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMA4F
Tolerance: ±5%
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| TSM340N06CH X0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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| TS103ACS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Type of integrated circuit: operational amplifier
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.00 грн |
| 14+ | 30.18 грн |
| 25+ | 26.61 грн |
| BZX85C4V7 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.82 грн |
| SMAJ30CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ30CA M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.3A; bidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.3A; bidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Leakage current: 1µA
на замовлення 55000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20834+ | 1.73 грн |
| BZX85C6V2 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 348 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.32 грн |
| 27+ | 15.75 грн |
| 100+ | 8.52 грн |
| SR1060 C0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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| MBRS2045CTH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Application: automotive industry
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| MBRS2045CT |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
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| MBRAD2045H |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Application: automotive industry
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| SMAJ48CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMCJ64A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ8V0CA |
|
на замовлення 18000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 6.25 грн |
| SMBJ43A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ43CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| TSM2302CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Gate charge: 7.8nC
On-state resistance: 65mΩ
Power dissipation: 0.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 300mW; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Gate charge: 7.8nC
On-state resistance: 65mΩ
Power dissipation: 0.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.54 грн |
| 11+ | 37.31 грн |
| SMF12A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| HER1004GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
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| HER1006GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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| HER1007GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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| HER1008GH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 80ns
Application: automotive industry
Max. load current: 10A
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| TSM500P02CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 254 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.79 грн |
| 27+ | 15.67 грн |
| SF14G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
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| SF14G-K |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
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| MBRAD15200DH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 7.5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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| SMF24A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| 1PGSMB5935 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; SMB; reel,tape; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.68 грн |
| 22+ | 19.24 грн |
| BZX85C27 R0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.14 грн |
| 100+ | 5.56 грн |
| 250+ | 4.89 грн |
| BZX55B27 A0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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Мінімальне замовлення: 20 шт
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| P4KE27CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7V; 11A; bidirectional; DO41; 0.4kW; P4KE
Mounting: THT
Case: DO41
Type of diode: TVS
Max. forward impulse current: 11A
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Manufacturer series: P4KE
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 25.7V; 11A; bidirectional; DO41; 0.4kW; P4KE
Mounting: THT
Case: DO41
Type of diode: TVS
Max. forward impulse current: 11A
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7V
Manufacturer series: P4KE
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
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| 1.5SMC30CAH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Application: automotive industry
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| BA159G-K |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; DO41; 500ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 0.5µs
Load current: 1A
Max. off-state voltage: 1kV
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; DO41; 500ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 0.5µs
Load current: 1A
Max. off-state voltage: 1kV
Case: DO41
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| SMAJ10CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| ES2B |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
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| ES2BA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Case: SMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
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| ES2BAL |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
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| ES2BALH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Case: thinSMA
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Application: automotive industry
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| ES2BFS |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
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| ES2BFSH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SOD128; Ufmax: 0.95V
Case: SOD128
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 0.1kV
Kind of package: reel; tape
Application: automotive industry
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| ES2BA M2G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 35ns; DO214AC,SMA; 950mV
Case: DO214AC; SMA
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 35ns; DO214AC,SMA; 950mV
Case: DO214AC; SMA
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
на замовлення 67500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 1.58 грн |