Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50228) > Сторінка 824 з 838
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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S4J V6G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 60pF Reverse recovery time: 1.5µs |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| TSS42U RG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Mounting: SMD Case - inch: 0603 Case - mm: 1608 Max. off-state voltage: 30V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky switching Max. forward impulse current: 4A Max. forward voltage: 1V |
на замовлення 2004 шт: термін постачання 14-30 дні (днів) |
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TSS40U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 40V; 0.2A; reel,tape Mounting: SMD Case - inch: 0603 Case - mm: 1608 Max. off-state voltage: 40V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky switching Max. forward impulse current: 0.6A Max. forward voltage: 1V |
на замовлення 3317 шт: термін постачання 14-30 дні (днів) |
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P6SMB56A M4G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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P6SMB56A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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P6SMB56CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: bidirectional Manufacturer series: P6SMB Leakage current: 1µA Max. forward impulse current: 8.1A Max. off-state voltage: 47.8V Breakdown voltage: 56V Peak pulse power dissipation: 0.6kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAV99 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Features of semiconductor devices: fast switching Max. load current: 0.45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX85C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 4.3V; DO41; single diode; tape Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.3V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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TSM2307CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 15nC |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 8.4nC Kind of package: tape |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| SF24G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 50A Semiconductor structure: single diode Case: DO15 Mounting: THT Load current: 2A Reverse recovery time: 35ns Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SF24G-T | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; DO15; 35ns Type of diode: rectifying Max. off-state voltage: 200V Semiconductor structure: single diode Case: DO15 Mounting: THT Load current: 2A Reverse recovery time: 35ns Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55B12 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 685 шт: термін постачання 14-30 дні (днів) |
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| MURF1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Reverse recovery time: 25ns Application: automotive industry Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; DO35; single diode; tape Mounting: THT Tolerance: ±5% Kind of package: tape Semiconductor structure: single diode Case: DO35 Zener voltage: 47V Type of diode: Zener Power dissipation: 0.5W |
на замовлення 419 шт: термін постачання 14-30 дні (днів) |
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TSCR420CX6H RFG | TAIWAN SEMICONDUCTOR |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 40V DC Power dissipation: 1W Operating current: 0.3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX85C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 16V; DO41; single diode; tape Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 855 шт: термін постачання 14-30 дні (днів) |
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TESDU5V0 RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape Type of diode: TVS Peak pulse power dissipation: 75W Max. off-state voltage: 5V Breakdown voltage: 5.1V Semiconductor structure: bidirectional Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Case - inch: 0201 Case - mm: 0603 |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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SMCJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX55C18 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 18V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52B5V1S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 430 шт: термін постачання 14-30 дні (днів) |
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| BZT52B5V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SS320 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 75A Max. forward voltage: 0.95V |
на замовлення 201 шт: термін постачання 14-30 дні (днів) |
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SS320LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: SOD123W Type of diode: Schottky rectifying Max. forward voltage: 0.95V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||
| SS320H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 70A Max. forward voltage: 0.95V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C3V0 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 696 шт: термін постачання 14-30 дні (днів) |
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RB751V-40 RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 0.37V Max. forward impulse current: 0.2A Kind of package: reel; tape |
на замовлення 455 шт: термін постачання 14-30 дні (днів) |
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| SMCJ45A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 21A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LL5817 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: MELF plastic Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 25A Max. forward voltage: 0.75V |
на замовлення 382 шт: термін постачання 14-30 дні (днів) |
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LL5818 L0 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Case: MELF plastic Semiconductor structure: single diode Kind of package: reel; tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 25A Max. forward voltage: 0.55V |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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LL5818 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Case: MELF plastic Semiconductor structure: single diode Kind of package: reel; tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 25A Max. forward voltage: 0.875V |
на замовлення 594 шт: термін постачання 14-30 дні (днів) |
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| SFF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns Mounting: THT Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns Mounting: THT Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns Mounting: THT Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching Reverse recovery time: 35ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZX55C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||
| HDBL107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP Max. forward impulse current: 50A Max. forward voltage: 1.7V Version: DIP Features of semiconductor devices: glass passivated Max. off-state voltage: 1kV Electrical mounting: THT Load current: 1A Kind of package: tube Case: DBL Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR2560CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 0.75V Max. off-state voltage: 60V Load current: 12.5A x2 Max. load current: 25A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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BZX55C39 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 39V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 895 шт: термін постачання 14-30 дні (днів) |
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| HERF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Reverse recovery time: 80ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C3V9 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 1166 шт: термін постачання 14-30 дні (днів) |
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BZX55C36 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 36V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 175 шт: термін постачання 14-30 дні (днів) |
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BZX55C33 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 33V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 33V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 215 шт: термін постачання 14-30 дні (днів) |
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SSL34 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.41V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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SSL34 V6G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.41V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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BYG20J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 30A Kind of package: reel; tape Features of semiconductor devices: glass passivated Reverse recovery time: 75ns |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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| BYG20JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.4V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: superfast switching Reverse recovery time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM70N1R4CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM70N1R4CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 7.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM70N380CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6.6A Power dissipation: 125W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM70N750CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 62.5W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM70N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RMB4S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZX55C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 16V; DO35; single diode; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||||||||||
| SMAJ43A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
SK320B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 966 шт: термін постачання 14-30 дні (днів) |
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SK320A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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SK320BH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Application: automotive industry Case: SMB Kind of package: reel; tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.95V Load current: 3A Max. off-state voltage: 200V Max. forward impulse current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SK320AH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| S4J V6G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Reverse recovery time: 1.5µs
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.58 грн |
| TSS42U RG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward impulse current: 4A
Max. forward voltage: 1V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward impulse current: 4A
Max. forward voltage: 1V
на замовлення 2004 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 10.39 грн |
| 70+ | 6.04 грн |
| 250+ | 5.45 грн |
| 1000+ | 4.86 грн |
| TSS40U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 40V; 0.2A; reel,tape
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 40V; 0.2A; reel,tape
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Max. off-state voltage: 40V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward impulse current: 0.6A
Max. forward voltage: 1V
на замовлення 3317 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.19 грн |
| 100+ | 10.02 грн |
| 500+ | 6.52 грн |
| 1000+ | 5.40 грн |
| 2000+ | 4.48 грн |
| P6SMB56A M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.24 грн |
| P6SMB56A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6SMB56CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 8.1A
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 8.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 8.1A
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Peak pulse power dissipation: 0.6kW
товару немає в наявності
В кошику
од. на суму грн.
| BAV99 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Max. load current: 0.45A
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C4V3 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.3V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 28+ | 15.52 грн |
| TSM2307CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 15nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 15nC
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.87 грн |
| TSM320N03CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.4nC
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.4nC
Kind of package: tape
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.45 грн |
| SF24G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Load current: 2A
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; DO15; 35ns
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Load current: 2A
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
товару немає в наявності
В кошику
од. на суму грн.
| SF24G-T |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Type of diode: rectifying
Max. off-state voltage: 200V
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Load current: 2A
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; DO15; 35ns
Type of diode: rectifying
Max. off-state voltage: 200V
Semiconductor structure: single diode
Case: DO15
Mounting: THT
Load current: 2A
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
товару немає в наявності
В кошику
од. на суму грн.
| BZX55B12 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 3.21 грн |
| 150+ | 2.84 грн |
| 500+ | 2.51 грн |
| MURF1620CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 25ns
Application: automotive industry
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 25ns
Application: automotive industry
Max. load current: 16A
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C47 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; DO35; single diode; tape
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Case: DO35
Zener voltage: 47V
Type of diode: Zener
Power dissipation: 0.5W
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; DO35; single diode; tape
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Semiconductor structure: single diode
Case: DO35
Zener voltage: 47V
Type of diode: Zener
Power dissipation: 0.5W
на замовлення 419 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.57 грн |
| 155+ | 2.73 грн |
| TSCR420CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 1W; 300mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 40V DC
Power dissipation: 1W
Operating current: 0.3A
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C16 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 855 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.23 грн |
| 100+ | 5.62 грн |
| 250+ | 4.95 грн |
| TESDU5V0 RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Case - inch: 0201
Case - mm: 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Case - inch: 0201
Case - mm: 0603
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 41+ | 10.32 грн |
| 100+ | 7.22 грн |
| SMCJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| BZX55C18 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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| BZT52B5V1S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 61+ | 6.96 грн |
| 103+ | 4.11 грн |
| 250+ | 3.33 грн |
| BZT52B5V1 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
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| SS320 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
на замовлення 201 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.68 грн |
| 28+ | 15.10 грн |
| 100+ | 13.59 грн |
| SS320LW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SOD123W
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
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Мінімальне замовлення: 3 шт
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| SS320H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 70A
Max. forward voltage: 0.95V
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| BZX55C3V0 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 696 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 61+ | 6.88 грн |
| 102+ | 4.14 грн |
| 500+ | 2.91 грн |
| RB751V-40 RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Max. forward impulse current: 0.2A
Kind of package: reel; tape
на замовлення 455 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.06 грн |
| 43+ | 9.90 грн |
| 100+ | 6.14 грн |
| SMCJ45A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 21A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 21A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 21A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| LL5817 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MELF plastic
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MELF plastic
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 25A
Max. forward voltage: 0.75V
на замовлення 382 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 100+ | 23.31 грн |
| LL5818 L0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: MELF plastic
Semiconductor structure: single diode
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: MELF plastic
Semiconductor structure: single diode
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 0.55V
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 25+ | 22.90 грн |
| 100+ | 19.54 грн |
| LL5818 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: MELF plastic
Semiconductor structure: single diode
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: MELF plastic
Semiconductor structure: single diode
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 25A
Max. forward voltage: 0.875V
на замовлення 594 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 19+ | 22.90 грн |
| 100+ | 20.21 грн |
| 500+ | 18.11 грн |
| SFF1608GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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| SFF1604GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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| SFF1606GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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| BZX55C11 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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Мінімальне замовлення: 20 шт
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| HDBL107G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Version: DIP
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Case: DBL
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Max. forward impulse current: 50A
Max. forward voltage: 1.7V
Version: DIP
Features of semiconductor devices: glass passivated
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 1A
Kind of package: tube
Case: DBL
Type of bridge rectifier: single-phase
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| MBR2560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 0.75V
Max. off-state voltage: 60V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.58 грн |
| 10+ | 64.58 грн |
| 50+ | 60.38 грн |
| BZX55C39 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 39V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 895 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 3.34 грн |
| 165+ | 2.57 грн |
| 500+ | 2.26 грн |
| HERF1608GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 80ns
Application: automotive industry
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| BZX55C3V9 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 1166 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.55 грн |
| 47+ | 8.97 грн |
| 100+ | 5.38 грн |
| 250+ | 4.31 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.04 грн |
| BZX55C36 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 36V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.57 грн |
| 155+ | 2.73 грн |
| BZX55C33 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 33V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 33V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.57 грн |
| 155+ | 2.73 грн |
| SSL34 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 17+ | 25.24 грн |
| 100+ | 19.29 грн |
| SSL34 V6G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.69 грн |
| 15+ | 28.26 грн |
| 25+ | 24.99 грн |
| BYG20J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 75ns
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 25+ | 17.28 грн |
| 100+ | 11.57 грн |
| BYG20JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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| TSM70N1R4CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N1R4CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: tape
Kind of channel: enhancement
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| TSM70N380CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 125W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 125W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N750CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.6A; 62.5W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 62.5W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N900CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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| RMB4S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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| BZX55C16 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| SMAJ43A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| SK320B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 966 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 22+ | 19.37 грн |
| 100+ | 13.08 грн |
| 500+ | 9.73 грн |
| SK320A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.39 грн |
| 24+ | 17.95 грн |
| 100+ | 11.57 грн |
| SK320BH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Application: automotive industry
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Application: automotive industry
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Load current: 3A
Max. off-state voltage: 200V
Max. forward impulse current: 70A
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| SK320AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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