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BZX85C5V6 R0G BZX85C5V6 R0G TAIWAN SEMICONDUCTOR BZX85C10-R0G.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 924 шт:
термін постачання 14-30 дні (днів)
20+22.32 грн
27+15.75 грн
100+8.90 грн
500+5.86 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZX55C5V6 R0 BZX55C5V6 R0 TAIWAN SEMICONDUCTOR BZX55C10-R0.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
111+4.04 грн
154+2.70 грн
500+2.37 грн
Мінімальне замовлення: 111 шт
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BZX55C5V6 R0G BZX55C5V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 276 шт:
термін постачання 14-30 дні (днів)
34+13.39 грн
47+8.87 грн
100+5.30 грн
250+4.25 грн
Мінімальне замовлення: 34 шт
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1N5404G TAIWAN SEMICONDUCTOR 1N5400-D.PDF 1N5400G SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 125A
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BZT52C3V3 RHG BZT52C3V3 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 889 шт:
термін постачання 14-30 дні (днів)
46+9.82 грн
69+6.05 грн
133+3.13 грн
Мінімальне замовлення: 46 шт
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SMBJ26CA SMBJ26CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26CAH SMBJ26CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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MBR3060PT MBR3060PT TAIWAN SEMICONDUCTOR MBR3035PT SERIES_K2103.pdf ds23017.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+149.11 грн
Мінімальне замовлення: 3 шт
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BZT52C6V8 RHG BZT52C6V8 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
105+4.29 грн
145+2.90 грн
250+2.30 грн
Мінімальне замовлення: 105 шт
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BZX84C5V1 RFG BZX84C5V1 RFG TAIWAN SEMICONDUCTOR BZX84C12-RFG.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
111+4.04 грн
123+3.38 грн
Мінімальне замовлення: 111 шт
В кошику  од. на суму  грн.
MBR60100PT TAIWAN SEMICONDUCTOR MBR6035PT SERIES_H2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247-3; Ufmax: 980mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode
Case: TO247-3
Max. forward voltage: 0.98V
Max. forward impulse current: 420A
Leakage current: 1mA
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
500+148.22 грн
Мінімальне замовлення: 500 шт
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TSM2N7002KCX RFG TSM2N7002KCX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
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 Мінімальне замовлення: 5 шт
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TQM2N7002KCU RFG TQM2N7002KCU RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KCU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 316mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCX RFG TQM2N7002KCX RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KCX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 416mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KDCU6 RFG TQM2N7002KDCU6 RFG TAIWAN SEMICONDUCTOR pdf.php?pn=TQM2N7002KDCU6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Power dissipation: 337mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ43CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SS215L TAIWAN SEMICONDUCTOR SS22L SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.85V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: subSMA
Semiconductor structure: single diode
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DBLS207G DBLS207G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
7+67.86 грн
11+39.05 грн
100+25.70 грн
125+24.71 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
DBLS205G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
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DBLS204G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
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DBLS208G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
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SMAJ18CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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BZX84C2V7 RFG BZX84C2V7 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
45+10.18 грн
75+5.70 грн
100+4.54 грн
500+4.08 грн
3000+3.81 грн
Мінімальне замовлення: 45 шт
В кошику  од. на суму  грн.
SMAJ24CA SMAJ24CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ24CAH SMAJ24CAH TAIWAN SEMICONDUCTOR eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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1N4148 A0G 1N4148 A0G TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Case: DO35
Kind of package: Ammo Pack
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.45A
Capacitance: 4pF
на замовлення 3952 шт:
термін постачання 14-30 дні (днів)
63+7.14 грн
85+4.89 грн
152+2.73 грн
500+1.81 грн
1000+1.55 грн
2000+1.34 грн
Мінімальне замовлення: 63 шт
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SMAJ58A SMAJ58A TAIWAN SEMICONDUCTOR 824500581.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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1N4746A 1N4746A TAIWAN SEMICONDUCTOR 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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MUR120S MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 0.875V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 0.875V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4 L0G TAIWAN SEMICONDUCTOR BZV55C2V4%20SERIES_H2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF glass
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
39+11.61 грн
57+7.38 грн
100+4.76 грн
250+3.99 грн
500+3.50 грн
1000+3.35 грн
Мінімальне замовлення: 39 шт
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BZX55C7V5 R0G BZX55C7V5 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
35+12.50 грн
Мінімальне замовлення: 35 шт
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BZX55C9V1 R0G BZX55C9V1 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 896 шт:
термін постачання 14-30 дні (днів)
39+11.61 грн
58+7.21 грн
100+4.35 грн
500+3.06 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
SMBJ26A SMBJ26A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH SMBJ26AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ58AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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GBU405 GBU405 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
5+91.97 грн
10+60.28 грн
20+51.90 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
GBU407 GBU407 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
5+98.22 грн
10+65.50 грн
20+57.13 грн
100+45.60 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SMBJ33CAH SMBJ33CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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1N4448 A0G 1N4448 A0G TAIWAN SEMICONDUCTOR 1N4148%20SERIES_J1804.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; reel,tape; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2318 шт:
термін постачання 14-30 дні (днів)
32+14.29 грн
35+11.88 грн
40+10.61 грн
59+7.03 грн
100+6.32 грн
250+3.52 грн
500+3.18 грн
1000+2.64 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
1N4448 A0 1N4448 A0 TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Max. load current: 0.45A
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
32+14.29 грн
35+11.88 грн
40+10.61 грн
59+7.03 грн
100+6.32 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMAJ58CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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DBLS152G TAIWAN SEMICONDUCTOR DBLS151G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Electrical mounting: SMT
Load current: 1.5A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
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US1DH US1DH TAIWAN SEMICONDUCTOR US1AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 75ns
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
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SF1004GH SF1004GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1005GH SF1005GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 300V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1006GH SF1006GH TAIWAN SEMICONDUCTOR SF1001G SERIES_K2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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SMBJ5.0CA SMBJ5.0CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BAT43W RHG BAT43W RHG TAIWAN SEMICONDUCTOR BAT42W SERIES_G1605.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 5ns
Capacitance: 10pF
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 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMBJ24CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ20CA SMBJ20CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2519 шт:
термін постачання 14-30 дні (днів)
16+28.57 грн
17+24.71 грн
18+23.05 грн
100+16.00 грн
500+12.02 грн
1000+10.70 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
SMBJ20A SMBJ20A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TSCDF06065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF06065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Mounting: THT
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: Schottky rectifying
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ES2G ES2G TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF ES2_1.pdf 1756711237167803.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GA ES2GA TAIWAN SEMICONDUCTOR ES2AA SERIES_M2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GAH ES2GAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2GAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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BZX85C5V6 R0G BZX85C10-R0G.pdf
BZX85C5V6 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 924 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.32 грн
27+15.75 грн
100+8.90 грн
500+5.86 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZX55C5V6 R0 BZX55C10-R0.pdf
BZX55C5V6 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 509 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
111+4.04 грн
154+2.70 грн
500+2.37 грн
Мінімальне замовлення: 111 шт
В кошику  од. на суму  грн.
BZX55C5V6 R0G
BZX55C5V6 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 276 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.39 грн
47+8.87 грн
100+5.30 грн
250+4.25 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
1N5404G 1N5400-D.PDF 1N5400G SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 125A; DO201AD
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 125A
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BZT52C3V3 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V3 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 889 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+9.82 грн
69+6.05 грн
133+3.13 грн
Мінімальне замовлення: 46 шт
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SMBJ26CA SMBJ.pdf
SMBJ26CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26CAH SMBJH.pdf
SMBJ26CAH
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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MBR3060PT MBR3035PT SERIES_K2103.pdf ds23017.pdf
MBR3060PT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247AD-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+149.11 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BZT52C6V8 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C6V8 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
105+4.29 грн
145+2.90 грн
250+2.30 грн
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
BZX84C5V1 RFG BZX84C12-RFG.pdf
BZX84C5V1 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
111+4.04 грн
123+3.38 грн
Мінімальне замовлення: 111 шт
В кошику  од. на суму  грн.
MBR60100PT MBR6035PT SERIES_H2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247-3; Ufmax: 980mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode
Case: TO247-3
Max. forward voltage: 0.98V
Max. forward impulse current: 420A
Leakage current: 1mA
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
500+148.22 грн
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
TSM2N7002KCX RFG
TSM2N7002KCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
TQM2N7002KCU RFG pdf.php?pn=TQM2N7002KCU
TQM2N7002KCU RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; 316mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 316mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KCX RFG pdf.php?pn=TQM2N7002KCX
TQM2N7002KCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 416mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.37A
Power dissipation: 416mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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TQM2N7002KDCU6 RFG pdf.php?pn=TQM2N7002KDCU6
TQM2N7002KDCU6 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 330mA; 337mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.33A
Power dissipation: 337mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: tape
Kind of channel: enhancement
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SMCJ43CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 22A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SS215L SS22L SERIES_O2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.85V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: subSMA
Semiconductor structure: single diode
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DBLS207G DBLS201G_ser.pdf
DBLS207G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+67.86 грн
11+39.05 грн
100+25.70 грн
125+24.71 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
DBLS205G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.6kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
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DBLS204G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.15V
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DBLS208G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Max. off-state voltage: 1.2kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
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SMAJ18CA description tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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BZX84C2V7 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C2V7 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
45+10.18 грн
75+5.70 грн
100+4.54 грн
500+4.08 грн
3000+3.81 грн
Мінімальне замовлення: 45 шт
В кошику  од. на суму  грн.
SMAJ24CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
SMAJ24CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ24CAH eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
SMAJ24CAH
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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1N4148 A0G 1N4448.pdf
1N4148 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Case: DO35
Kind of package: Ammo Pack
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.45A
Capacitance: 4pF
на замовлення 3952 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.14 грн
85+4.89 грн
152+2.73 грн
500+1.81 грн
1000+1.55 грн
2000+1.34 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
SMAJ58A 824500581.pdf
SMAJ58A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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1N4746A 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf
1N4746A
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
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MUR120S MUR105S SERIES_L2102.pdf
MUR120S
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 0.875V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR105SH SERIES_A2102.pdf
MUR120SH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 0.875V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Kind of package: reel; tape
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4%20SERIES_H2301.pdf
BZV55C2V4 L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF glass
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.61 грн
57+7.38 грн
100+4.76 грн
250+3.99 грн
500+3.50 грн
1000+3.35 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
BZX55C7V5 R0G
BZX55C7V5 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
35+12.50 грн
Мінімальне замовлення: 35 шт
В кошику  од. на суму  грн.
BZX55C9V1 R0G
BZX55C9V1 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; DO35; single diode; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 896 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.61 грн
58+7.21 грн
100+4.35 грн
500+3.06 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
SMBJ26A SMBJ.pdf
SMBJ26A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH SMBJH.pdf
SMBJ26AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ58AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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GBU405 GBU407_ser.pdf
GBU405
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+91.97 грн
10+60.28 грн
20+51.90 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
GBU407 GBU407_ser.pdf
GBU407
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+98.22 грн
10+65.50 грн
20+57.13 грн
100+45.60 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
SMBJ33CAH SMBJH.pdf
SMBJ33CAH
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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1N4448 A0G 1N4148%20SERIES_J1804.pdf
1N4448 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; reel,tape; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2318 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.29 грн
35+11.88 грн
40+10.61 грн
59+7.03 грн
100+6.32 грн
250+3.52 грн
500+3.18 грн
1000+2.64 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
1N4448 A0 1N4448.pdf
1N4448 A0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ifsm: 2A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Max. load current: 0.45A
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.29 грн
35+11.88 грн
40+10.61 грн
59+7.03 грн
100+6.32 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
SMAJ58CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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DBLS152G DBLS151G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. off-state voltage: 0.1kV
Electrical mounting: SMT
Load current: 1.5A
Type of bridge rectifier: single-phase
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
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US1DH US1AH SERIES_A2102.pdf
US1DH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 75ns
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
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SF1004GH SF1001G SERIES_K2104.pdf
SF1004GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1005GH SF1001G SERIES_K2104.pdf
SF1005GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 300V
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
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SF1006GH SF1001G SERIES_K2104.pdf
SF1006GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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SMBJ5.0CA SMBJ.pdf
SMBJ5.0CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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BAT43W RHG BAT42W SERIES_G1605.pdf
BAT43W RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 5ns
Capacitance: 10pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SMBJ24CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ20CA SMBJ.pdf
SMBJ20CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2519 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+28.57 грн
17+24.71 грн
18+23.05 грн
100+16.00 грн
500+12.02 грн
1000+10.70 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
SMBJ20A SMBJ.pdf
SMBJ20A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TSCDF06065G1 pdf.php?pn=TSCDF06065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Mounting: THT
Technology: SiC
Max. off-state voltage: 650V
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: Schottky rectifying
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ES2G ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF ES2_1.pdf 1756711237167803.pdf es2a.pdf
ES2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GA ES2AA SERIES_M2102.pdf
ES2GA
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GAH ES2AAH SERIES_A2102.pdf
ES2GAH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2GAL ES2BAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES2GALH ES2BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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