Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49222) > Сторінка 817 з 821
| Фото | Назва | Виробник | Інформація |
Доступність |
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SS13M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| TSM025NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 113nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TSM025NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMAJ30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RMB2S | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB36A R4 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Manufacturer series: P6SMB Leakage current: 1µA Max. forward impulse current: 3A Max. off-state voltage: 128V Breakdown voltage: 150V Peak pulse power dissipation: 0.6kW |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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TSM2305CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 55mΩ Mounting: SMD Gate charge: 20nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GBU1006 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS14 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.4V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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TS2596SCS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...24V DC Output voltage: 1.23...19.5V DC Output current: 2A Case: SOP8 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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| TS2596CM533 RNG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 3.3V DC Output current: 3A Case: D2PAK-5 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SK86C | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: reel; tape Max. forward voltage: 0.75V |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 8.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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| 1.5SMC30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 38A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMCJ28CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 34A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SK56C | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 120A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P4KE30A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5V Max. forward impulse current: 10A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU1005 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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GBU1007 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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BZT52C18 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TSA1765CW RPG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 560V Collector current: 0.15A Power dissipation: 2W Case: SOT223 Pulsed collector current: 0.5A Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMCJ130A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 144÷159V; 7.5A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 130V Breakdown voltage: 144...159V Max. forward impulse current: 7.5A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SK56CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 120A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS5MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S5MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 5A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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B0520LW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.385V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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TS358CD C3G | TAIWAN SEMICONDUCTOR |
Category: THT operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: 0...70°C Slew rate: 0.4V/μs Input offset voltage: 9mV Kind of package: tube Input bias current: 0.5µA Input offset current: 150nA |
на замовлення 2062 шт: термін постачання 14-30 дні (днів) |
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| SMBJ28CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMBJ28CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMBJ28CAHM4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.1V; 13.8A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 13.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Number of channels: 1 |
на замовлення 21000 шт: термін постачання 14-30 дні (днів) |
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BAT54W RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 991 шт: термін постачання 14-30 дні (днів) |
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SD101BW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape Mounting: SMD Reverse recovery time: 1ns Load current: 15mA Max. forward impulse current: 2A Max. forward voltage: 0.95V Max. off-state voltage: 50V Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Case: SOD123 |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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SD101BW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape Mounting: SMD Reverse recovery time: 1ns Load current: 15mA Max. forward impulse current: 2A Max. forward voltage: 0.95V Max. off-state voltage: 50V Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Case: SOD123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1.5KE39CAH | TAIWAN SEMICONDUCTOR |
Category: Unclassified Description: 1.5KE39CAH |
на замовлення 8750 шт: термін постачання 14-30 дні (днів) |
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BZX55C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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BZT52C13 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 893 шт: термін постачання 14-30 дні (днів) |
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| P4KE33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: thinSMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Application: automotive industry Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: thinSMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD128 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Application: automotive industry Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD128 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Application: automotive industry Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HS1KLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123W; Ufmax: 1.7V Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. off-state voltage: 0.8kV Application: automotive industry Mounting: SMD Features of semiconductor devices: superfast switching Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMBJ58CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMBJ58CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZT52B4V3 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 5808 шт: термін постачання 14-30 дні (днів) |
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BZX55B4V3 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: THT Tolerance: ±2% Case: DO35 Semiconductor structure: single diode |
на замовлення 625 шт: термін постачання 14-30 дні (днів) |
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BZT52B4V3S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode |
на замовлення 945 шт: термін постачання 14-30 дні (днів) |
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BZV55B4V3 L1G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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BZY55B4V3 RYG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case - inch: 0805 Case - mm: 2012 Semiconductor structure: single diode |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| BZY55B4V3 RBG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case - inch: 0805 Case - mm: 2012 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZS55C6V2 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; 1206; single diode Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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| SMBJ120A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 3.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMBJ120CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 3.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMAJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
UGF2008GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; ITO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 20A Reverse recovery time: 25ns Application: automotive industry |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
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SFF2005GAH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Type of diode: rectifying Mounting: THT Reverse recovery time: 35ns Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 300V Application: automotive industry |
на замовлення 992 шт: термін постачання 14-30 дні (днів) |
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| KBU407G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBU407 C2G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; 280A; GBU Type of bridge rectifier: single-phase Max. forward impulse current: 280A Case: GBU |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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| SS13M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.65 грн |
| 29+ | 14.38 грн |
| 100+ | 8.56 грн |
| 500+ | 6.24 грн |
| 1000+ | 5.49 грн |
| TSM025NB04CR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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В кошику
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| TSM025NB04LCR RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SMAJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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В кошику
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| RMB2S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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| P6SMB36A R4 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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| P6SMB150CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.34 грн |
| 18+ | 23.28 грн |
| 25+ | 19.45 грн |
| 100+ | 14.13 грн |
| TSM2305CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
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| GBU1006 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| SS14 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.33 грн |
| 42+ | 10.06 грн |
| TS2596SCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.23 грн |
| TS2596CM533 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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| SK86C |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. forward voltage: 0.75V
на замовлення 89 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.83 грн |
| 13+ | 32.76 грн |
| 20+ | 30.01 грн |
| P4SMA36A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 89 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.65 грн |
| 40+ | 10.39 грн |
| 1.5SMC30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 38A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| SMCJ28CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SK56C |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
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| P4KE30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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| GBU1005 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.53 грн |
| 10+ | 71.50 грн |
| 20+ | 66.51 грн |
| GBU1007 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 48 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.66 грн |
| 10+ | 73.16 грн |
| 20+ | 69.01 грн |
| BZT52C18 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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| TSA1765CW RPG |
Виробник: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
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| SMCJ130A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.5A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 144÷159V; 7.5A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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| SK56CH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
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| HS5MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
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| S5MH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; 1.5us; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
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| B0520LW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.385V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.12 грн |
| 39+ | 10.89 грн |
| 50+ | 8.73 грн |
| 100+ | 7.82 грн |
| TS358CD C3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.4V/μs
Input offset voltage: 9mV
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.4V/μs
Input offset voltage: 9mV
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 2062 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 24+ | 18.04 грн |
| 26+ | 16.30 грн |
| 50+ | 15.21 грн |
| 100+ | 14.22 грн |
| 250+ | 13.05 грн |
| 500+ | 12.47 грн |
| SMBJ28CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ28CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.8A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| SMBJ28CAHM4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1V; 13.8A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1V; 13.8A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 13.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 21000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 2.67 грн |
| BAT54W RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.95 грн |
| 72+ | 5.82 грн |
| 120+ | 3.47 грн |
| SD101BW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Mounting: SMD
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Mounting: SMD
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
на замовлення 70 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 6.27 грн |
| SD101BW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Mounting: SMD
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 50V; 0.015A; 1ns; reel,tape
Mounting: SMD
Reverse recovery time: 1ns
Load current: 15mA
Max. forward impulse current: 2A
Max. forward voltage: 0.95V
Max. off-state voltage: 50V
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD123
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| 1.5KE39CAH |
на замовлення 8750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 26.86 грн |
| BZX55C13 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.64 грн |
| 57+ | 7.40 грн |
| BZT52C13 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 893 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.95 грн |
| 79+ | 5.32 грн |
| 126+ | 3.31 грн |
| 250+ | 2.81 грн |
| 500+ | 2.61 грн |
| P4KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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| HS1KAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
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| HS1KALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; thinSMA; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
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| HS1KFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
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| HS1KFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD128; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
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| HS1KH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
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| HS1KLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123W; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123W; Ufmax: 1.7V
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.8kV
Application: automotive industry
Mounting: SMD
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
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| SMBJ58CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ58CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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| BZT52B4V3 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 5808 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 5.10 грн |
| 105+ | 4.15 грн |
| 250+ | 3.67 грн |
| 1000+ | 3.53 грн |
| BZX55B4V3 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±2%
Case: DO35
Semiconductor structure: single diode
на замовлення 625 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 145+ | 3.18 грн |
| 150+ | 2.82 грн |
| 500+ | 2.49 грн |
| BZT52B4V3S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
на замовлення 945 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 5.10 грн |
| 125+ | 3.43 грн |
| 250+ | 2.72 грн |
| BZV55B4V3 L1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.77 грн |
| BZY55B4V3 RYG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
Semiconductor structure: single diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.14 грн |
| BZY55B4V3 RBG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case - inch: 0805
Case - mm: 2012
Semiconductor structure: single diode
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| BZS55C6V2 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; 1206; single diode
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; 1206; single diode
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 85+ | 5.37 грн |
| 125+ | 3.33 грн |
| SMBJ120A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| SMBJ120CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷147V; 3.2A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 3.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| SMAJ12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3V; 20.1A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| UGF2008GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 25ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; ITO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 20A
Reverse recovery time: 25ns
Application: automotive industry
на замовлення 977 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.21 грн |
| 10+ | 46.97 грн |
| 25+ | 42.23 грн |
| SFF2005GAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 300V
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; ITO220AB; 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 300V
Application: automotive industry
на замовлення 992 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.52 грн |
| 10+ | 54.04 грн |
| 25+ | 49.05 грн |
| KBU407G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| GBU407 C2G |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 280A; GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 280A
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 280A; GBU
Type of bridge rectifier: single-phase
Max. forward impulse current: 280A
Case: GBU
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.73 грн |

























