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P4SMA33CA TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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P4SMA33AH TAIWAN SEMICONDUCTOR P4SMAH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4SMA
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P4SMA33CAH TAIWAN SEMICONDUCTOR P4SMAH SERIES_A2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4SMA
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MUR1620CT TAIWAN SEMICONDUCTOR MUR1620CT-MUR1620FCT.pdf mur1620ct.pdf MUR1620CT_Rev08.pdf MUR1620CT%2C%20RURP820CC.pdf MUR1620CT SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
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MUR1620CTH TAIWAN SEMICONDUCTOR MUR1620CT SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
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TSM170N06CH X0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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TSM170N06CH C5G TAIWAN SEMICONDUCTOR TSM170N06CH_A2211.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 38A; 46W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 38A
Power dissipation: 46W
Case: IPAK; TO251
Gate-source voltage: 20V
Mounting: THT
Gate charge: 28.5nC
Kind of channel: enhancement
на замовлення 11250 шт:
термін постачання 14-30 дні (днів)
3750+30.81 грн
Мінімальне замовлення: 3750
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SMBJ18CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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BZX55C3V6 R0G BZX55C3V6 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: tape
Semiconductor structure: single diode
на замовлення 1648 шт:
термін постачання 14-30 дні (днів)
39+11.85 грн
54+7.87 грн
84+5.08 грн
114+3.74 грн
250+2.84 грн
500+2.54 грн
1000+2.13 грн
Мінімальне замовлення: 39
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TS34063CS RLG TS34063CS RLG TAIWAN SEMICONDUCTOR TS34063CS-RLG.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SOP8
Mounting: SMD
Frequency: 24...100kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
8+57.43 грн
12+36.06 грн
25+32.51 грн
100+25.14 грн
Мінімальне замовлення: 8
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ES2D TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
18+26.44 грн
22+19.81 грн
24+18.20 грн
100+13.37 грн
500+10.33 грн
1000+9.14 грн
Мінімальне замовлення: 18
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ES2DAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DFS TAIWAN SEMICONDUCTOR ES2BFS SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DFSH TAIWAN SEMICONDUCTOR ES2BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DH TAIWAN SEMICONDUCTOR ES2AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DVH TAIWAN SEMICONDUCTOR ES2DVH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
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BC847B RFG BC847B RFG TAIWAN SEMICONDUCTOR BC846A Series_I2001.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
на замовлення 1177 шт:
термін постачання 14-30 дні (днів)
141+3.24 грн
218+1.95 грн
272+1.56 грн
500+1.46 грн
1000+1.40 грн
Мінімальне замовлення: 141
В кошику  од. на суму  грн.
BZS55C3V3 RAG BZS55C3V3 RAG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
30+14.22 грн
46+9.35 грн
100+7.13 грн
250+5.24 грн
500+4.67 грн
Мінімальне замовлення: 20
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TSZU52C3V3 RGG TAIWAN SEMICONDUCTOR TSZU52C2V0%20SERIES_G2009.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 3.3V; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 1608
Case - inch: 0603
на замовлення 370 шт:
термін постачання 14-30 дні (днів)
21+21.88 грн
27+15.83 грн
100+9.46 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
SMCJ24CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM3N80CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CI C0G TSM3N80CI C0G TAIWAN SEMICONDUCTOR TSM3N80_F1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tape
Kind of channel: enhancement
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TSM3N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSUP12122 TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT55C27 L1 BZT55C27 L1 TAIWAN SEMICONDUCTOR BZT55C-TAI-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7465 шт:
термін постачання 14-30 дні (днів)
334+1.37 грн
455+0.93 грн
477+0.89 грн
500+0.85 грн
Мінімальне замовлення: 334
В кошику  од. на суму  грн.
GBU1505 GBU1505 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1506 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1507 TAIWAN SEMICONDUCTOR GBU1507_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU15L05 GBU15L05 TAIWAN SEMICONDUCTOR GBU15L05.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
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GBU806 GBU806 TAIWAN SEMICONDUCTOR GBU807_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
5+106.66 грн
10+64.33 грн
20+60.10 грн
Мінімальне замовлення: 5
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KBU806G KBU806G TAIWAN SEMICONDUCTOR KBU807G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
4+126.72 грн
Мінімальне замовлення: 4
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HS2MAH TAIWAN SEMICONDUCTOR HS2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MAL TAIWAN SEMICONDUCTOR HS2DAL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS2MALH TAIWAN SEMICONDUCTOR HS2DALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MFS TAIWAN SEMICONDUCTOR HS2DFS SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SOD128; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS2MFSH TAIWAN SEMICONDUCTOR HS2DFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SOD128; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MH TAIWAN SEMICONDUCTOR HS2AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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SS115 SS115 TAIWAN SEMICONDUCTOR SS12 SERIES_R2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 150V
на замовлення 5704 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
30+14.22 грн
50+10.24 грн
100+8.78 грн
250+7.06 грн
500+5.81 грн
1000+4.56 грн
2000+3.43 грн
5000+2.38 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SS115L R2 SS115L R2 TAIWAN SEMICONDUCTOR SS110L-R2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 150V
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
40+10.16 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SS115L SS115L TAIWAN SEMICONDUCTOR SS12L SERIES_Q2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 150V
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
13+36.47 грн
21+20.57 грн
100+13.29 грн
250+11.26 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SS115H TAIWAN SEMICONDUCTOR SS12H SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Application: automotive industry
Max. off-state voltage: 150V
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SS115LWH TAIWAN SEMICONDUCTOR SS14LWH SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Case: SOD123W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Application: automotive industry
Max. off-state voltage: 150V
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SS115HM2G TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Case: SMA
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
на замовлення 217500 шт:
термін постачання 14-30 дні (днів)
22500+1.81 грн
Мінімальне замовлення: 22500
В кошику  од. на суму  грн.
BZT52C10 RHG BZT52C10 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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BZT52C5V1 RHG BZT52C5V1 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Tolerance: ±5%
на замовлення 810 шт:
термін постачання 14-30 дні (днів)
46+10.03 грн
71+6.01 грн
120+3.53 грн
500+2.71 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MUR160S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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MUR160SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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SF38G TAIWAN SEMICONDUCTOR SF31G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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SF38G-A TAIWAN SEMICONDUCTOR SF31G-A SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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S1KLSH TAIWAN SEMICONDUCTOR S1DLSH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Application: automotive industry
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RS1KLSH TAIWAN SEMICONDUCTOR RS1JLSH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TS431ACX RFG TS431ACX RFG TAIWAN SEMICONDUCTOR TS431ACX-RFG.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1152 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
30+14.39 грн
35+12.44 грн
100+10.58 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TSM260P02CX RFG TSM260P02CX RFG TAIWAN SEMICONDUCTOR TSM260P02CX_A2312.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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SK210A TAIWAN SEMICONDUCTOR SK210A%20N0190%20REV.A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSG65N190CR RVG TAIWAN SEMICONDUCTOR TSG65N190CR_B2305.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N068CE RVG TAIWAN SEMICONDUCTOR TSG65N068CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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P4SMA33CA tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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P4SMA33AH P4SMAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4SMA
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P4SMA33CAH P4SMAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Max. forward impulse current: 9A
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Peak pulse power dissipation: 0.4kW
Application: automotive industry
Manufacturer series: P4SMA
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MUR1620CT MUR1620CT-MUR1620FCT.pdf mur1620ct.pdf MUR1620CT_Rev08.pdf MUR1620CT%2C%20RURP820CC.pdf MUR1620CT SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Max. load current: 16A
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MUR1620CTH MUR1620CT SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Reverse recovery time: 25ns
Features of semiconductor devices: ultrafast switching
Application: automotive industry
Max. load current: 16A
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TSM170N06CH X0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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TSM170N06CH C5G TSM170N06CH_A2211.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 38A; 46W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 38A
Power dissipation: 46W
Case: IPAK; TO251
Gate-source voltage: 20V
Mounting: THT
Gate charge: 28.5nC
Kind of channel: enhancement
на замовлення 11250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3750+30.81 грн
Мінімальне замовлення: 3750
В кошику  од. на суму  грн.
SMBJ18CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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BZX55C3V6 R0G
BZX55C3V6 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: tape
Semiconductor structure: single diode
на замовлення 1648 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.85 грн
54+7.87 грн
84+5.08 грн
114+3.74 грн
250+2.84 грн
500+2.54 грн
1000+2.13 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
TS34063CS RLG TS34063CS-RLG.pdf
TS34063CS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; 1.5A; SOP8; SMD; 24÷100kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output current: 1.5A
Case: SOP8
Mounting: SMD
Frequency: 24...100kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+57.43 грн
12+36.06 грн
25+32.51 грн
100+25.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES2D ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.44 грн
22+19.81 грн
24+18.20 грн
100+13.37 грн
500+10.33 грн
1000+9.14 грн
Мінімальне замовлення: 18
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ES2DAH ES2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DAL ES2BAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DALH ES2BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DFS ES2BFS SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
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ES2DFSH ES2BFSH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DH ES2AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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ES2DVH ES2DVH_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
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BC847B RFG BC846A Series_I2001.pdf
BC847B RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
на замовлення 1177 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
141+3.24 грн
218+1.95 грн
272+1.56 грн
500+1.46 грн
1000+1.40 грн
Мінімальне замовлення: 141
В кошику  од. на суму  грн.
BZS55C3V3 RAG
BZS55C3V3 RAG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; 1206; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 3216
Case - inch: 1206
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
30+14.22 грн
46+9.35 грн
100+7.13 грн
250+5.24 грн
500+4.67 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TSZU52C3V3 RGG TSZU52C2V0%20SERIES_G2009.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 3.3V; SMD; reel,tape; 0603; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Semiconductor structure: single diode
Case - mm: 1608
Case - inch: 0603
на замовлення 370 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.88 грн
27+15.83 грн
100+9.46 грн
Мінімальне замовлення: 21
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SMCJ24CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM3N80CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CI C0G TSM3N80_F1706.pdf
TSM3N80CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSM3N80CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: tape
Kind of channel: enhancement
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TSM3N80CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.83A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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TSUP12122
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 12A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT55C27 L1 BZT55C-TAI-DTE.pdf
BZT55C27 L1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; MiniMELF quadro; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Kind of package: reel; tape
Case: MiniMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7465 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
334+1.37 грн
455+0.93 грн
477+0.89 грн
500+0.85 грн
Мінімальне замовлення: 334
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GBU1505 GBU1507_ser.pdf
GBU1505
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1506 GBU1507_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1507 GBU1507_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU15L05 GBU15L05.pdf
GBU15L05
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.75V
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GBU806 GBU807_ser.pdf
GBU806
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+106.66 грн
10+64.33 грн
20+60.10 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBU806G KBU807G_ser.pdf
KBU806G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+126.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
HS2MAH HS2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MAL HS2DAL SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS2MALH HS2DALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; thinSMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MFS HS2DFS SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SOD128; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.7V
Kind of package: reel; tape
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HS2MFSH HS2DFSH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SOD128; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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HS2MH HS2AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 75ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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SS115 SS12 SERIES_R2305.pdf
SS115
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 150V
на замовлення 5704 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
30+14.22 грн
50+10.24 грн
100+8.78 грн
250+7.06 грн
500+5.81 грн
1000+4.56 грн
2000+3.43 грн
5000+2.38 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SS115L R2 SS110L-R2.pdf
SS115L R2
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 150V
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
40+10.16 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SS115L SS12L SERIES_Q2103.pdf
SS115L
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 150V; 1A; reel,tape
Case: subSMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 150V
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.47 грн
21+20.57 грн
100+13.29 грн
250+11.26 грн
Мінімальне замовлення: 13
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SS115H SS12H SERIES_B2305.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Case: SMA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Application: automotive industry
Max. off-state voltage: 150V
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SS115LWH SS14LWH SERIES_B2305.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 150V; 1A; reel,tape
Case: SOD123W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Application: automotive industry
Max. off-state voltage: 150V
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SS115HM2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA
Case: SMA
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
на замовлення 217500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22500+1.81 грн
Мінімальне замовлення: 22500
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BZT52C10 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C10 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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BZT52C5V1 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C5V1 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Tolerance: ±5%
на замовлення 810 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+10.03 грн
71+6.01 грн
120+3.53 грн
500+2.71 грн
Мінімальне замовлення: 46
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MUR160S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
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MUR160SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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SF38G SF31G SERIES_H2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 125A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 125A
Case: DO201AD
Reverse recovery time: 35ns
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SF38G-A SF31G-A SERIES_B2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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S1KLSH S1DLSH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; SOD123HE; Ufmax: 1.3V; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Application: automotive industry
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RS1KLSH RS1JLSH SERIES_B2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TS431ACX RFG TS431ACX-RFG.pdf
TS431ACX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 1152 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
30+14.39 грн
35+12.44 грн
100+10.58 грн
Мінімальне замовлення: 20
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TSM260P02CX RFG TSM260P02CX_A2312.pdf
TSM260P02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Kind of channel: enhancement
Case: SOT23
Type of transistor: P-MOSFET
Kind of package: tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Gate charge: 19.5nC
On-state resistance: 26mΩ
Power dissipation: 1.56W
Gate-source voltage: ±10V
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SK210A SK210A%20N0190%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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TSG65N190CR RVG TSG65N190CR_B2305.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N068CE RVG TSG65N068CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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