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SI7380ADP-T1-E3 SI7380ADP-T1-E3 Vishay Siliconix 73408.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
товар відсутній
SI7380ADP-T1-GE3 SI7380ADP-T1-GE3 Vishay Siliconix 73408.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
товар відсутній
SI7382DP-T1-GE3 SI7382DP-T1-GE3 Vishay Siliconix si7382dp.pdf Description: MOSFET N-CH 30V 14A PPAK SO-8
товар відсутній
SI7384DP-T1-GE3 SI7384DP-T1-GE3 Vishay Siliconix 72656.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
товар відсутній
SI7388DP-T1-E3 SI7388DP-T1-E3 Vishay Siliconix 71919.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7388DP-T1-GE3 SI7388DP-T1-GE3 Vishay Siliconix 71919.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7390DP-T1-E3 SI7390DP-T1-E3 Vishay Siliconix si7390dp.pdf Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7390DP-T1-GE3 SI7390DP-T1-GE3 Vishay Siliconix si7390dp.pdf Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7392ADP-T1-E3 SI7392ADP-T1-E3 Vishay Siliconix si7392ad.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SI7392ADP-T1-GE3 SI7392ADP-T1-GE3 Vishay Siliconix si7392ad.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SI7392DP-T1-E3 SI7392DP-T1-E3 Vishay Siliconix si7392dp.pdf Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7392DP-T1-GE3 SI7392DP-T1-GE3 Vishay Siliconix si7392dp.pdf Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7402DN-T1-E3 SI7402DN-T1-E3 Vishay Siliconix 72646.pdf Description: MOSFET N-CH 12V 13A PPAK 1212-8
товар відсутній
SI7402DN-T1-GE3 SI7402DN-T1-GE3 Vishay Siliconix 72646.pdf Description: MOSFET N-CH 12V 13A PPAK 1212-8
товар відсутній
SI7404DN-T1-E3 SI7404DN-T1-E3 Vishay Siliconix si7404dn.pdf Description: MOSFET N-CH 30V 8.5A PPAK 1212-8
товар відсутній
SI7404DN-T1-GE3 SI7404DN-T1-GE3 Vishay Siliconix si7404dn.pdf Description: MOSFET N-CH 30V 8.5A PPAK 1212-8
товар відсутній
SI7405BDN-T1-E3 SI7405BDN-T1-E3 Vishay Siliconix si7405bd.pdf Description: MOSFET P-CH 12V 16A PPAK 1212-8
товар відсутній
SI7407DN-T1-E3 SI7407DN-T1-E3 Vishay Siliconix si7407dn.pdf Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
товар відсутній
SI7407DN-T1-GE3 SI7407DN-T1-GE3 Vishay Siliconix si7407dn.pdf Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
товар відсутній
SI7409ADN-T1-GE3 SI7409ADN-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 7A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
товар відсутній
SI7413DN-T1-GE3 SI7413DN-T1-GE3 Vishay Siliconix 72616.pdf Description: MOSFET P-CH 20V 8.4A PPAK 1212-8
товар відсутній
SI7421DN-T1-GE3 SI7421DN-T1-GE3 Vishay Siliconix 72416.pdf Description: MOSFET P-CH 30V 6.4A PPAK 1212-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
SI7423DN-T1-GE3 SI7423DN-T1-GE3 Vishay Siliconix 72582.pdf Description: MOSFET P-CH 30V 7.4A PPAK 1212-8
товар відсутній
SI7425DN-T1-E3 SI7425DN-T1-E3 Vishay Siliconix 72400.pdf Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
товар відсутній
SI7425DN-T1-GE3 SI7425DN-T1-GE3 Vishay Siliconix 72400.pdf Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
товар відсутній
Si7440DP-T1-E3 Si7440DP-T1-E3 Vishay Siliconix 71623.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7440DP-T1-GE3 SI7440DP-T1-GE3 Vishay Siliconix 71623.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
Si7445DP-T1-E3 Si7445DP-T1-E3 Vishay Siliconix 71626.pdf Description: MOSFET P-CH 20V 12A PPAK 1212-8
товар відсутній
SI7445DP-T1-GE3 SI7445DP-T1-GE3 Vishay Siliconix 71626.pdf Description: MOSFET P-CH 20V 12A PPAK 1212-8
товар відсутній
SI7446BDP-T1-E3 SI7446BDP-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
товар відсутній
SI7446BDP-T1-GE3 SI7446BDP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
товар відсутній
SI7447ADP-T1-E3 SI7447ADP-T1-E3 Vishay Siliconix si7447ad.pdf Description: MOSFET P-CH 30V 35A PPAK 1212-8
товар відсутній
SI7447ADP-T1-GE3 SI7447ADP-T1-GE3 Vishay Siliconix si7447ad.pdf Description: MOSFET P-CH 30V 35A PPAK 1212-8
товар відсутній
SI7448DP-T1-GE3 SI7448DP-T1-GE3 Vishay Siliconix si7448dp.pdf Description: MOSFET N-CH 20V 13.4A PPAK SO-8
товар відсутній
SI7452DP-T1-E3 SI7452DP-T1-E3 Vishay Siliconix 72972.pdf Description: MOSFET N-CH 60V 11.5A PPAK SO-8
товар відсутній
SI7452DP-T1-GE3 SI7452DP-T1-GE3 Vishay Siliconix 72972.pdf Description: MOSFET N-CH 60V 11.5A PPAK SO-8
товар відсутній
SI7455DP-T1-E3 SI7455DP-T1-E3 Vishay Siliconix si7455dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
товар відсутній
SI7455DP-T1-GE3 SI7455DP-T1-GE3 Vishay Siliconix si7455dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
товар відсутній
SI7457DP-T1-E3 SI7457DP-T1-E3 Vishay Siliconix si7457dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
товар відсутній
SI7457DP-T1-GE3 SI7457DP-T1-GE3 Vishay Siliconix si7457dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
товар відсутній
SI7476DP-T1-GE3 SI7476DP-T1-GE3 Vishay Siliconix si7476dp.pdf Description: MOSFET N-CH 40V 15A PPAK SO-8
товар відсутній
SI7491DP-T1-GE3 SI7491DP-T1-GE3 Vishay Siliconix 72276.pdf Description: MOSFET P-CH 30V 11A PPAK SO-8
товар відсутній
SI7495DP-T1-E3 SI7495DP-T1-E3 Vishay Siliconix 72277.pdf Description: MOSFET P-CH 12V 13A PPAK SO-8
товар відсутній
SI7495DP-T1-GE3 SI7495DP-T1-GE3 Vishay Siliconix 72277.pdf Description: MOSFET P-CH 12V 13A PPAK SO-8
товар відсутній
SI7530DP-T1-GE3 SI7530DP-T1-GE3 Vishay Siliconix 73249.pdf Description: MOSFET N/P-CH 60V 3A 8-SOIC
товар відсутній
SI7601DN-T1-E3 SI7601DN-T1-E3 Vishay Siliconix Description: MOSFET P-CH 20V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 11A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 10 V
товар відсутній
SI7615DN-T1-GE3 SI7615DN-T1-GE3 Vishay Siliconix si7615dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+43.1 грн
6000+ 39.53 грн
9000+ 37.7 грн
Мінімальне замовлення: 3000
SI7633DP-T1-GE3 SI7633DP-T1-GE3 Vishay Siliconix si7633dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+48.25 грн
Мінімальне замовлення: 3000
SI7634BDP-T1-E3 SI7634BDP-T1-E3 Vishay Siliconix si7634bd.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
товар відсутній
SI7636DP-T1-GE3 SI7636DP-T1-GE3 Vishay Siliconix si7636dp.pdf Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
товар відсутній
SI7664DP-T1-E3 SI7664DP-T1-E3 Vishay Siliconix si7664dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
товар відсутній
SI7664DP-T1-GE3 SI7664DP-T1-GE3 Vishay Siliconix si7664dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
товар відсутній
SI7668ADP-T1-E3 SI7668ADP-T1-E3 Vishay Siliconix si7668ad.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
товар відсутній
SI7668ADP-T1-GE3 SI7668ADP-T1-GE3 Vishay Siliconix si7668ad.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
товар відсутній
SI7674DP-T1-E3 SI7674DP-T1-E3 Vishay Siliconix si7674dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
товар відсутній
SI7674DP-T1-GE3 SI7674DP-T1-GE3 Vishay Siliconix si7674dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
товар відсутній
SI7682DP-T1-E3 SI7682DP-T1-E3 Vishay Siliconix 73350.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
товар відсутній
SI7682DP-T1-GE3 SI7682DP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 15 V
товар відсутній
SI7804DN-T1-GE3 SI7804DN-T1-GE3 Vishay Siliconix 72317.pdf Description: MOSFET N-CH 30V 6.5A 1212-8
товар відсутній
SI7806ADN-T1-GE3 SI7806ADN-T1-GE3 Vishay Siliconix 72995.pdf Description: MOSFET N-CH 30V 9A 1212-8
товар відсутній
SI7380ADP-T1-E3 73408.pdf
SI7380ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
товар відсутній
SI7380ADP-T1-GE3 73408.pdf
SI7380ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
товар відсутній
SI7382DP-T1-GE3 si7382dp.pdf
SI7382DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 14A PPAK SO-8
товар відсутній
SI7384DP-T1-GE3 72656.pdf
SI7384DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
товар відсутній
SI7388DP-T1-E3 71919.pdf
SI7388DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7388DP-T1-GE3 71919.pdf
SI7388DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7390DP-T1-E3 si7390dp.pdf
SI7390DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7390DP-T1-GE3 si7390dp.pdf
SI7390DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7392ADP-T1-E3 si7392ad.pdf
SI7392ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SI7392ADP-T1-GE3 si7392ad.pdf
SI7392ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SI7392DP-T1-E3 si7392dp.pdf
SI7392DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7392DP-T1-GE3 si7392dp.pdf
SI7392DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK SO-8
товар відсутній
SI7402DN-T1-E3 72646.pdf
SI7402DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK 1212-8
товар відсутній
SI7402DN-T1-GE3 72646.pdf
SI7402DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK 1212-8
товар відсутній
SI7404DN-T1-E3 si7404dn.pdf
SI7404DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 8.5A PPAK 1212-8
товар відсутній
SI7404DN-T1-GE3 si7404dn.pdf
SI7404DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 8.5A PPAK 1212-8
товар відсутній
SI7405BDN-T1-E3 si7405bd.pdf
SI7405BDN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK 1212-8
товар відсутній
SI7407DN-T1-E3 si7407dn.pdf
SI7407DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
товар відсутній
SI7407DN-T1-GE3 si7407dn.pdf
SI7407DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 9.9A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15.6A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
товар відсутній
SI7409ADN-T1-GE3
SI7409ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 7A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
товар відсутній
SI7413DN-T1-GE3 72616.pdf
SI7413DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 8.4A PPAK 1212-8
товар відсутній
SI7421DN-T1-GE3 72416.pdf
SI7421DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 6.4A PPAK 1212-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
SI7423DN-T1-GE3 72582.pdf
SI7423DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK 1212-8
товар відсутній
SI7425DN-T1-E3 72400.pdf
SI7425DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
товар відсутній
SI7425DN-T1-GE3 72400.pdf
SI7425DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
товар відсутній
Si7440DP-T1-E3 71623.pdf
Si7440DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
SI7440DP-T1-GE3 71623.pdf
SI7440DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
товар відсутній
Si7445DP-T1-E3 71626.pdf
Si7445DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
товар відсутній
SI7445DP-T1-GE3 71626.pdf
SI7445DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
товар відсутній
SI7446BDP-T1-E3
SI7446BDP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
товар відсутній
SI7446BDP-T1-GE3
SI7446BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
товар відсутній
SI7447ADP-T1-E3 si7447ad.pdf
SI7447ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK 1212-8
товар відсутній
SI7447ADP-T1-GE3 si7447ad.pdf
SI7447ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK 1212-8
товар відсутній
SI7448DP-T1-GE3 si7448dp.pdf
SI7448DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13.4A PPAK SO-8
товар відсутній
SI7452DP-T1-E3 72972.pdf
SI7452DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
товар відсутній
SI7452DP-T1-GE3 72972.pdf
SI7452DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
товар відсутній
SI7455DP-T1-E3 si7455dp.pdf
SI7455DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
товар відсутній
SI7455DP-T1-GE3 si7455dp.pdf
SI7455DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
товар відсутній
SI7457DP-T1-E3 si7457dp.pdf
SI7457DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
товар відсутній
SI7457DP-T1-GE3 si7457dp.pdf
SI7457DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
товар відсутній
SI7476DP-T1-GE3 si7476dp.pdf
SI7476DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
товар відсутній
SI7491DP-T1-GE3 72276.pdf
SI7491DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 11A PPAK SO-8
товар відсутній
SI7495DP-T1-E3 72277.pdf
SI7495DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
товар відсутній
SI7495DP-T1-GE3 72277.pdf
SI7495DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
товар відсутній
SI7530DP-T1-GE3 73249.pdf
SI7530DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A 8-SOIC
товар відсутній
SI7601DN-T1-E3
SI7601DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 11A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 10 V
товар відсутній
SI7615DN-T1-GE3 si7615dn.pdf
SI7615DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+43.1 грн
6000+ 39.53 грн
9000+ 37.7 грн
Мінімальне замовлення: 3000
SI7633DP-T1-GE3 si7633dp.pdf
SI7633DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+48.25 грн
Мінімальне замовлення: 3000
SI7634BDP-T1-E3 si7634bd.pdf
SI7634BDP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
товар відсутній
SI7636DP-T1-GE3 si7636dp.pdf
SI7636DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
товар відсутній
SI7664DP-T1-E3 si7664dp.pdf
SI7664DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
товар відсутній
SI7664DP-T1-GE3 si7664dp.pdf
SI7664DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
товар відсутній
SI7668ADP-T1-E3 si7668ad.pdf
SI7668ADP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
товар відсутній
SI7668ADP-T1-GE3 si7668ad.pdf
SI7668ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
товар відсутній
SI7674DP-T1-E3 si7674dp.pdf
SI7674DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
товар відсутній
SI7674DP-T1-GE3 si7674dp.pdf
SI7674DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
товар відсутній
SI7682DP-T1-E3 73350.pdf
SI7682DP-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
товар відсутній
SI7682DP-T1-GE3
SI7682DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 15 V
товар відсутній
SI7804DN-T1-GE3 72317.pdf
SI7804DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 1212-8
товар відсутній
SI7806ADN-T1-GE3 72995.pdf
SI7806ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8
товар відсутній
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