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DG408LEDY-T1-GE3 DG408LEDY-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 37082 шт:
термін постачання 21-31 дні (днів)
3+117.77 грн
10+83.39 грн
25+75.81 грн
100+63.37 грн
250+59.65 грн
500+57.41 грн
1000+56.27 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG409LEDQ-T1-GE3 DG409LEDQ-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 9347 шт:
термін постачання 21-31 дні (днів)
3+149.33 грн
10+105.99 грн
25+96.63 грн
100+81.04 грн
250+76.44 грн
500+74.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG409LEDY-T1-GE3 DG409LEDY-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 4951 шт:
термін постачання 21-31 дні (днів)
3+137.78 грн
10+97.77 грн
25+89.09 грн
100+74.62 грн
250+70.33 грн
500+67.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDQ-T1-GE3 DG411LEDQ-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
3+116.23 грн
10+81.98 грн
25+74.57 грн
100+62.30 грн
250+58.64 грн
500+56.44 грн
1000+53.73 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDY-T1-GE3 DG411LEDY-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
4+102.37 грн
10+72.34 грн
25+65.67 грн
100+54.77 грн
250+51.48 грн
500+49.51 грн
1000+47.09 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG412LEDQ-T1-GE3 DG412LEDQ-T1-GE3 Vishay Siliconix dg411.pdf Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 21567 шт:
термін постачання 21-31 дні (днів)
3+137.78 грн
10+97.77 грн
25+89.09 грн
100+74.62 грн
250+70.33 грн
500+67.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG412LEDY-T1-GE3 DG412LEDY-T1-GE3 Vishay Siliconix dg411.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 3656 шт:
термін постачання 21-31 дні (днів)
3+122.39 грн
10+86.28 грн
25+78.48 грн
100+65.58 грн
250+61.73 грн
500+59.41 грн
1000+58.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDQ-T1-GE3 DG413LEDQ-T1-GE3 Vishay Siliconix dg411.pdf Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 3973 шт:
термін постачання 21-31 дні (днів)
3+117.77 грн
10+83.39 грн
25+75.81 грн
100+63.37 грн
250+59.65 грн
500+57.41 грн
1000+56.27 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDY-T1-GE3 DG413LEDY-T1-GE3 Vishay Siliconix dg411.pdf Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 12604 шт:
термін постачання 21-31 дні (днів)
3+104.68 грн
10+73.60 грн
25+66.80 грн
100+55.70 грн
250+52.37 грн
500+50.36 грн
1000+49.11 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG441LEDQ-T1-GE3 DG441LEDQ-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)
4+98.53 грн
10+69.38 грн
25+62.91 грн
100+52.41 грн
250+49.24 грн
500+47.32 грн
1000+46.04 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG441LEDY-T1-GE3 DG441LEDY-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4841 шт:
термін постачання 21-31 дні (днів)
4+84.67 грн
10+59.37 грн
25+53.78 грн
100+44.66 грн
250+41.89 грн
500+40.22 грн
1000+38.88 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDQ-T1-GE3 DG442LEDQ-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 13895 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG442LEDY-T1-GE3 DG442LEDY-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4557 шт:
термін постачання 21-31 дні (днів)
4+84.67 грн
10+59.37 грн
25+53.78 грн
100+44.66 грн
250+41.89 грн
500+40.22 грн
1000+38.88 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG4051EEQ-T1-GE3 DG4051EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC MUX 8:1 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 47240 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4051EEY-T1-GE3 DG4051EEY-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC MUX 8:1 78OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 12898 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4052EEQ-T1-GE3 DG4052EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SP4T X 2 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 20993 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4052EEY-T1-GE3 DG4052EEY-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SP4T X 2 78OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 739 шт:
термін постачання 21-31 дні (днів)
3+107.76 грн
10+93.62 грн
25+88.32 грн
100+70.60 грн
250+66.29 грн
500+58.01 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4053EEQ-T1-GE3 DG4053EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SPDT X 3 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 3
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)
4+97.76 грн
10+68.41 грн
25+62.08 грн
100+51.70 грн
250+48.58 грн
500+46.69 грн
1000+44.40 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG408LEDQ-GE3 DG408LEDQ-GE3 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
3+139.32 грн
10+99.55 грн
60+84.25 грн
120+75.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG408LEDY-GE3 DG408LEDY-GE3 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
3+129.31 грн
10+91.91 грн
50+78.75 грн
100+70.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG408LEDN-T1-GE4 DG408LEDN-T1-GE4 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+51.61 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DG409LEDQ-GE3 DG409LEDQ-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -109dB @ 100kHz
Charge Injection: -10pC
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 23Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
DG409LEDY-GE3 DG409LEDY-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)
3+137.78 грн
10+97.77 грн
50+83.83 грн
100+74.62 грн
250+70.33 грн
500+67.75 грн
1000+64.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDQ-GE3 DG411LEDQ-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG411LEDY-GE3 DG411LEDY-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
3+116.23 грн
10+82.20 грн
50+70.31 грн
100+62.51 грн
250+58.85 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDJ-GE3 DG411LEDJ-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG412LEDY-GE3 DG412LEDY-GE3 Vishay Siliconix dg411.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
3+135.47 грн
10+95.91 грн
50+82.22 грн
100+73.18 грн
250+68.98 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG412LEDJ-GE3 DG412LEDJ-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NOX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG413LEDQ-GE3 DG413LEDQ-GE3 Vishay Siliconix dg411.pdf Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
3+133.16 грн
10+94.80 грн
60+80.11 грн
120+71.44 грн
300+67.49 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDY-GE3 DG413LEDY-GE3 Vishay Siliconix dg411.pdf Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
3+118.54 грн
10+83.68 грн
50+71.53 грн
100+63.59 грн
250+59.86 грн
500+57.61 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDJ-GE3 DG413LEDJ-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NO/NCX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG441LEDQ-GE3 DG441LEDQ-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
3+111.61 грн
10+78.87 грн
60+66.30 грн
120+59.03 грн
300+55.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG441LEDY-GE3 DG441LEDY-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
4+96.22 грн
10+67.53 грн
50+57.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDY-GE3 DG442LEDY-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
4+96.99 грн
10+67.82 грн
50+57.68 грн
100+51.20 грн
250+48.09 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDJ-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH QUAD SPST 16-PDIP
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG4051EEN-T1-GE4 DG4051EEN-T1-GE4 Vishay Siliconix dg4051e.pdf Description: IC MUX 8:1 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG4052EEN-T1-GE4 DG4052EEN-T1-GE4 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SP4TX2 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG4053EEN-T1-GE4 DG4053EEN-T1-GE4 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SPDTX3 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHB21N65EF-GE3 SIHB21N65EF-GE3 Vishay Siliconix sihb21n65ef.pdf Description: MOSFET N-CH 650V 21A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
1+425.66 грн
50+216.05 грн
В кошику  од. на суму  грн.
SIHG21N65EF-GE3 SIHG21N65EF-GE3 Vishay Siliconix sihg21n65ef.pdf Description: MOSFET N-CH 650V 21A TO247AC
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
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SIHG33N65EF-GE3 SIHG33N65EF-GE3 Vishay Siliconix sihg33n65ef.pdf Description: MOSFET N-CH 650V 31.6A TO247AC
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SIHH21N65EF-T1-GE3 SIHH21N65EF-T1-GE3 Vishay Siliconix sihh21n65ef.pdf Description: MOSFET N-CH 650V 19.8A PPAK 8X8
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SIHP28N65EF-GE3 SIHP28N65EF-GE3 Vishay Siliconix sihp28n65ef.pdf Description: MOSFET N-CH 650V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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DG2592DN-T1-GE4 DG2592DN-T1-GE4 Vishay Siliconix vis-dg2592dn-t1-ge4.pdf Description: IC DETECTION SWITCH 10MINIQFN
Number of Channels: 1
Supplier Device Package: 10-miniQFN (1.4x1.8)
Applications: Consumer Audio
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Detection Switch
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SI1411DH-T1-GE3 SI1411DH-T1-GE3 Vishay Siliconix si1411dh.pdf Description: MOSFET P-CH 150V 420MA SOT363
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
FET Type: P-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+24.25 грн
Мінімальне замовлення: 3000 шт
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SIR808DP-T1-GE3 SIR808DP-T1-GE3 Vishay Siliconix SIR808DP.pdf Description: MOSFET N-CH 25V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SUM25P10-138-E3 SUM25P10-138-E3 Vishay Siliconix SUM25P10-138.pdf Description: MOSFET N-CH 100V 16.7A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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SiHH11N65EF-T1-GE3 SiHH11N65EF-T1-GE3 Vishay Siliconix sihh11n65ef.pdf Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH11N65E-T1-GE3 SiHH11N65E-T1-GE3 Vishay Siliconix sihh11n65e.pdf Description: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH14N65EF-T1-GE3 SiHH14N65EF-T1-GE3 Vishay Siliconix sihh14n65ef.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+164.11 грн
Мінімальне замовлення: 3000 шт
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SiHH21N60EF-T1-GE3 SiHH21N60EF-T1-GE3 Vishay Siliconix sihh21n60ef.pdf Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH24N65EF-T1-GE3 SiHH24N65EF-T1-GE3 Vishay Siliconix sihh24n65ef.pdf Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH24N65E-T1-GE3 SiHH24N65E-T1-GE3 Vishay Siliconix sihh24n65e.pdf Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH26N60EF-T1-GE3 SiHH26N60EF-T1-GE3 Vishay Siliconix sihh26n60ef.pdf Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SiHH14N65EF-T1-GE3 SiHH14N65EF-T1-GE3 Vishay Siliconix sihh14n65ef.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+445.67 грн
10+288.26 грн
100+208.08 грн
500+181.53 грн
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SiHH24N65EF-T1-GE3 SiHH24N65EF-T1-GE3 Vishay Siliconix sihh24n65ef.pdf Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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SiHH24N65E-T1-GE3 SiHH24N65E-T1-GE3 Vishay Siliconix sihh24n65e.pdf Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
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SiHH26N60EF-T1-GE3 SiHH26N60EF-T1-GE3 Vishay Siliconix sihh26n60ef.pdf Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V
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SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 Vishay Siliconix sihj6n65e.pdf Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 Vishay Siliconix sihj7n65e.pdf Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DG408LEDY-T1-GE3 dg408le.pdf
DG408LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 37082 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+117.77 грн
10+83.39 грн
25+75.81 грн
100+63.37 грн
250+59.65 грн
500+57.41 грн
1000+56.27 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG409LEDQ-T1-GE3 dg408le.pdf
DG409LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 9347 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+149.33 грн
10+105.99 грн
25+96.63 грн
100+81.04 грн
250+76.44 грн
500+74.02 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG409LEDY-T1-GE3 dg408le.pdf
DG409LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 4951 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+137.78 грн
10+97.77 грн
25+89.09 грн
100+74.62 грн
250+70.33 грн
500+67.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDQ-T1-GE3 dg411le.pdf
DG411LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+116.23 грн
10+81.98 грн
25+74.57 грн
100+62.30 грн
250+58.64 грн
500+56.44 грн
1000+53.73 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDY-T1-GE3 dg411le.pdf
DG411LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.37 грн
10+72.34 грн
25+65.67 грн
100+54.77 грн
250+51.48 грн
500+49.51 грн
1000+47.09 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG412LEDQ-T1-GE3 dg411.pdf
DG412LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 21567 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+137.78 грн
10+97.77 грн
25+89.09 грн
100+74.62 грн
250+70.33 грн
500+67.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG412LEDY-T1-GE3 dg411.pdf
DG412LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 3656 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+122.39 грн
10+86.28 грн
25+78.48 грн
100+65.58 грн
250+61.73 грн
500+59.41 грн
1000+58.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDQ-T1-GE3 dg411.pdf
DG413LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 3973 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+117.77 грн
10+83.39 грн
25+75.81 грн
100+63.37 грн
250+59.65 грн
500+57.41 грн
1000+56.27 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDY-T1-GE3 dg411.pdf
DG413LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 12604 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+104.68 грн
10+73.60 грн
25+66.80 грн
100+55.70 грн
250+52.37 грн
500+50.36 грн
1000+49.11 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG441LEDQ-T1-GE3 dg441le.pdf
DG441LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+98.53 грн
10+69.38 грн
25+62.91 грн
100+52.41 грн
250+49.24 грн
500+47.32 грн
1000+46.04 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG441LEDY-T1-GE3 dg441le.pdf
DG441LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4841 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+84.67 грн
10+59.37 грн
25+53.78 грн
100+44.66 грн
250+41.89 грн
500+40.22 грн
1000+38.88 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDQ-T1-GE3 dg441le.pdf
DG442LEDQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 13895 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG442LEDY-T1-GE3 dg441le.pdf
DG442LEDY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 4557 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+84.67 грн
10+59.37 грн
25+53.78 грн
100+44.66 грн
250+41.89 грн
500+40.22 грн
1000+38.88 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG4051EEQ-T1-GE3 dg4051e.pdf
DG4051EEQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 47240 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4051EEY-T1-GE3 dg4051e.pdf
DG4051EEY-T1-GE3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 78OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 12898 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4052EEQ-T1-GE3 dg4051e.pdf
DG4052EEQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 20993 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.31 грн
25+73.88 грн
100+61.69 грн
250+58.03 грн
500+55.83 грн
1000+54.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4052EEY-T1-GE3 dg4051e.pdf
DG4052EEY-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 78OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 739 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+107.76 грн
10+93.62 грн
25+88.32 грн
100+70.60 грн
250+66.29 грн
500+58.01 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG4053EEQ-T1-GE3 dg4051e.pdf
DG4053EEQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 3 78OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 3
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+97.76 грн
10+68.41 грн
25+62.08 грн
100+51.70 грн
250+48.58 грн
500+46.69 грн
1000+44.40 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG408LEDQ-GE3 dg408le.pdf
DG408LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+139.32 грн
10+99.55 грн
60+84.25 грн
120+75.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG408LEDY-GE3 dg408le.pdf
DG408LEDY-GE3
Виробник: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+129.31 грн
10+91.91 грн
50+78.75 грн
100+70.10 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG408LEDN-T1-GE4 dg408le.pdf
DG408LEDN-T1-GE4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+51.61 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DG409LEDQ-GE3 dg408le.pdf
DG409LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel-to-Channel Matching (ΔRon): 1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -109dB @ 100kHz
Charge Injection: -10pC
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 23Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
DG409LEDY-GE3 dg408le.pdf
DG409LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+137.78 грн
10+97.77 грн
50+83.83 грн
100+74.62 грн
250+70.33 грн
500+67.75 грн
1000+64.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDQ-GE3 dg411le.pdf
DG411LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG411LEDY-GE3 dg411le.pdf
DG411LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+116.23 грн
10+82.20 грн
50+70.31 грн
100+62.51 грн
250+58.85 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG411LEDJ-GE3 dg411le.pdf
DG411LEDJ-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG412LEDY-GE3 dg411.pdf
DG412LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+135.47 грн
10+95.91 грн
50+82.22 грн
100+73.18 грн
250+68.98 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG412LEDJ-GE3 dg411le.pdf
DG412LEDJ-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG413LEDQ-GE3 dg411.pdf
DG413LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+133.16 грн
10+94.80 грн
60+80.11 грн
120+71.44 грн
300+67.49 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDY-GE3 dg411.pdf
DG413LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+118.54 грн
10+83.68 грн
50+71.53 грн
100+63.59 грн
250+59.86 грн
500+57.61 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG413LEDJ-GE3 dg411le.pdf
DG413LEDJ-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG441LEDQ-GE3 dg441le.pdf
DG441LEDQ-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+111.61 грн
10+78.87 грн
60+66.30 грн
120+59.03 грн
300+55.67 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DG441LEDY-GE3 dg441le.pdf
DG441LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.22 грн
10+67.53 грн
50+57.44 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDY-GE3 dg441le.pdf
DG442LEDY-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.99 грн
10+67.82 грн
50+57.68 грн
100+51.20 грн
250+48.09 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DG442LEDJ-GE3 dg441le.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-PDIP
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
DG4051EEN-T1-GE4 dg4051e.pdf
DG4051EEN-T1-GE4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG4052EEN-T1-GE4 dg4051e.pdf
DG4052EEN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SP4TX2 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DG4053EEN-T1-GE4 dg4051e.pdf
DG4053EEN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SPDTX3 78OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+57.30 грн
6000+54.01 грн
9000+53.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHB21N65EF-GE3 sihb21n65ef.pdf
SIHB21N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 21A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+425.66 грн
50+216.05 грн
В кошику  од. на суму  грн.
SIHG21N65EF-GE3 sihg21n65ef.pdf
SIHG21N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 21A TO247AC
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
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Мінімальне замовлення: 500 шт
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SIHG33N65EF-GE3 sihg33n65ef.pdf
SIHG33N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 31.6A TO247AC
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SIHH21N65EF-T1-GE3 sihh21n65ef.pdf
SIHH21N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 19.8A PPAK 8X8
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SIHP28N65EF-GE3 sihp28n65ef.pdf
SIHP28N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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DG2592DN-T1-GE4 vis-dg2592dn-t1-ge4.pdf
DG2592DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC DETECTION SWITCH 10MINIQFN
Number of Channels: 1
Supplier Device Package: 10-miniQFN (1.4x1.8)
Applications: Consumer Audio
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Detection Switch
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SI1411DH-T1-GE3 si1411dh.pdf
SI1411DH-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 420MA SOT363
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
FET Type: P-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+24.25 грн
Мінімальне замовлення: 3000 шт
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SIR808DP-T1-GE3 SIR808DP.pdf
SIR808DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SUM25P10-138-E3 SUM25P10-138.pdf
SUM25P10-138-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.7A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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SiHH11N65EF-T1-GE3 sihh11n65ef.pdf
SiHH11N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH11N65E-T1-GE3 sihh11n65e.pdf
SiHH11N65E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH14N65EF-T1-GE3 sihh14n65ef.pdf
SiHH14N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+164.11 грн
Мінімальне замовлення: 3000 шт
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SiHH21N60EF-T1-GE3 sihh21n60ef.pdf
SiHH21N60EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH24N65EF-T1-GE3 sihh24n65ef.pdf
SiHH24N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH24N65E-T1-GE3 sihh24n65e.pdf
SiHH24N65E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH26N60EF-T1-GE3 sihh26n60ef.pdf
SiHH26N60EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SiHH14N65EF-T1-GE3 sihh14n65ef.pdf
SiHH14N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+445.67 грн
10+288.26 грн
100+208.08 грн
500+181.53 грн
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SiHH24N65EF-T1-GE3 sihh24n65ef.pdf
SiHH24N65EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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SiHH24N65E-T1-GE3 sihh24n65e.pdf
SiHH24N65E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
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SiHH26N60EF-T1-GE3 sihh26n60ef.pdf
SiHH26N60EF-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V
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SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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