Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10950) > Сторінка 57 з 183
| Фото | Назва | Виробник | Інформація |
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SI3469DV-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 5A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
на замовлення 2448 шт: термін постачання 21-31 дні (днів) |
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SI3473CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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SI3475DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 200V 0.95A 6-TSOP |
товар відсутній |
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SI3477DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V |
на замовлення 29336 шт: термін постачання 21-31 дні (днів) |
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SI3483CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
на замовлення 83176 шт: термін постачання 21-31 дні (днів) |
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SI3493BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V |
на замовлення 15569 шт: термін постачання 21-31 дні (днів) |
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Si3552DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Active |
на замовлення 4528 шт: термін постачання 21-31 дні (днів) |
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Si3585DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Obsolete |
товар відсутній |
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Si3586DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSOP |
товар відсутній |
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Si3588DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW, 83mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 6-TSOP |
товар відсутній |
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SI3805DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.3A 6-TSOP |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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SI3850ADV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 1.4A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.08W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete |
товар відсутній |
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Si3900DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 2A 6-TSOP |
на замовлення 5324 шт: термін постачання 21-31 дні (днів) |
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Si3932DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 3.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP |
на замовлення 19529 шт: термін постачання 21-31 дні (днів) |
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SI4004DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 12A 8-SOIC |
товар відсутній |
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SI4102DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 8-SOIC |
на замовлення 2619 шт: термін постачання 21-31 дні (днів) |
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SI4104DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 4.6A 8-SOIC |
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SI4124DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 20.5A 8SO |
товар відсутній |
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SI4154DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 36A 8SO |
товар відсутній |
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SI4156DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
на замовлення 2987 шт: термін постачання 21-31 дні (днів) |
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SI4178DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V |
на замовлення 2279 шт: термін постачання 21-31 дні (днів) |
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SI4190DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 20A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
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SI4204DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 19.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19.8A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 27506 шт: термін постачання 21-31 дні (днів) |
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Si4228DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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SI4276DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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SI4340CDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC |
на замовлення 612 шт: термін постачання 21-31 дні (днів) |
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SI4396DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 16A 8-SOIC |
на замовлення 546 шт: термін постачання 21-31 дні (днів) |
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SI4401DDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 16.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V |
на замовлення 13056 шт: термін постачання 21-31 дні (днів) |
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SI4403BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 7.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V Power Dissipation (Max): 1.35W (Ta) Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
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SI4409DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 1.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V |
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SI4418DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.3A 8-SOIC |
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SI4434DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 2.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
на замовлення 17002 шт: термін постачання 21-31 дні (днів) |
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SI4446DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 3.9A 8-SOIC |
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SI4447DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 3.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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SI4463BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V |
на замовлення 4957 шт: термін постачання 21-31 дні (днів) |
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SI4464DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
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SI4465ADY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V |
на замовлення 2121 шт: термін постачання 21-31 дні (днів) |
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SI4470EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 9A 8SO |
товар відсутній |
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SI4472DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A 8-SOIC |
на замовлення 1692 шт: термін постачання 21-31 дні (днів) |
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SI4483ADY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 19.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
на замовлення 27044 шт: термін постачання 21-31 дні (днів) |
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SI4484EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 4.8A 8-SOIC |
товар відсутній |
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SI4487DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 11.6A 8-SOIC |
на замовлення 9523 шт: термін постачання 21-31 дні (днів) |
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SI4488DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 3.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
на замовлення 5177 шт: термін постачання 21-31 дні (днів) |
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SI4490DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.85A 8SO |
на замовлення 1876 шт: термін постачання 21-31 дні (днів) |
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SI4497DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 36A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V |
на замовлення 26544 шт: термін постачання 21-31 дні (днів) |
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SI4500BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6.6A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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SI4501ADY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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SI4511DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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SI4564DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W, 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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SI4599DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 40V 6.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W, 3.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 7851 шт: термін постачання 21-31 дні (днів) |
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SI4620DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 6A 8-SOIC |
на замовлення 268 шт: термін постачання 21-31 дні (днів) |
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SI4622DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC |
товар відсутній |
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SI4636DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 17A 8-SOIC |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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SI4650DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC |
товар відсутній |
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SI4654DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 28.6A 8-SOIC |
на замовлення 4878 шт: термін постачання 21-31 дні (днів) |
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SI4666DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 16.5A 8-SOIC |
на замовлення 9639 шт: термін постачання 21-31 дні (днів) |
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SI4670DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SOIC |
товар відсутній |
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SI4778DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V |
товар відсутній |
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SI4812BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 7.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
товар відсутній |
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SI4823DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4.1A 8-SOIC |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
| SI3469DV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Description: MOSFET P-CH 20V 5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
на замовлення 2448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.07 грн |
| 10+ | 65.72 грн |
| 100+ | 51.25 грн |
| 500+ | 39.73 грн |
| 1000+ | 31.37 грн |
| SI3473CDV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.79 грн |
| 10+ | 37.38 грн |
| 100+ | 25.86 грн |
| 500+ | 20.28 грн |
| 1000+ | 17.26 грн |
| SI3475DV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 0.95A 6-TSOP
Description: MOSFET P-CH 200V 0.95A 6-TSOP
товар відсутній
| SI3477DV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 6 V
на замовлення 29336 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.92 грн |
| 10+ | 39.43 грн |
| 100+ | 27.29 грн |
| 500+ | 21.4 грн |
| 1000+ | 18.21 грн |
| SI3483CDV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 83176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.98 грн |
| 10+ | 49.97 грн |
| 100+ | 38.88 грн |
| 500+ | 30.93 грн |
| 1000+ | 25.19 грн |
| SI3493BDV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
на замовлення 15569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 59.72 грн |
| 10+ | 50.04 грн |
| 100+ | 34.63 грн |
| 500+ | 27.16 грн |
| 1000+ | 23.11 грн |
| Si3552DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 4528 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.61 грн |
| 10+ | 43.54 грн |
| 100+ | 30.16 грн |
| 500+ | 23.65 грн |
| 1000+ | 20.13 грн |
| Si3585DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
товар відсутній
| Si3586DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSOP
товар відсутній
| Si3588DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 20V 2.5A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
товар відсутній
| SI3805DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Description: MOSFET P-CH 20V 3.3A 6-TSOP
на замовлення 420 шт:
термін постачання 21-31 дні (днів)| SI3850ADV-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.4A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.08W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Description: MOSFET N/P-CH 20V 1.4A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.08W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
товар відсутній
| Si3900DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Description: MOSFET 2N-CH 20V 2A 6-TSOP
на замовлення 5324 шт:
термін постачання 21-31 дні (днів)| Si3932DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET 2N-CH 30V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
на замовлення 19529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.68 грн |
| 10+ | 31.08 грн |
| 100+ | 21.55 грн |
| 500+ | 16.9 грн |
| 1000+ | 14.38 грн |
| SI4102DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 8-SOIC
Description: MOSFET N-CH 100V 3.8A 8-SOIC
на замовлення 2619 шт:
термін постачання 21-31 дні (днів)| SI4156DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.29 грн |
| 10+ | 45.93 грн |
| 100+ | 35.74 грн |
| 500+ | 28.43 грн |
| 1000+ | 23.16 грн |
| SI4178DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
на замовлення 2279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.81 грн |
| 10+ | 33.61 грн |
| 100+ | 23.27 грн |
| 500+ | 18.25 грн |
| 1000+ | 15.53 грн |
| SI4190DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: MOSFET N-CH 100V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
товар відсутній
| SI4204DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 27506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.43 грн |
| 10+ | 95.36 грн |
| 100+ | 75.95 грн |
| 500+ | 60.31 грн |
| 1000+ | 51.17 грн |
| Si4228DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.85 грн |
| 10+ | 52.99 грн |
| 100+ | 41.33 грн |
| 500+ | 32.04 грн |
| 1000+ | 25.3 грн |
| SI4276DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Description: MOSFET 2N-CH 30V 8A 8-SOIC
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| SI4340CDY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
Description: MOSFET 2N-CH 20V 14.1A 14-SOIC
на замовлення 612 шт:
термін постачання 21-31 дні (днів)| SI4396DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
Description: MOSFET N-CH 30V 16A 8-SOIC
на замовлення 546 шт:
термін постачання 21-31 дні (днів)| SI4401DDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 20 V
на замовлення 13056 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.74 грн |
| 10+ | 45.66 грн |
| 100+ | 31.61 грн |
| 500+ | 24.78 грн |
| 1000+ | 21.09 грн |
| SI4403BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 1.35W (Ta)
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Description: MOSFET P-CH 20V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Power Dissipation (Max): 1.35W (Ta)
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
товар відсутній
| SI4409DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
товар відсутній
| SI4434DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
на замовлення 17002 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.1 грн |
| 10+ | 151.36 грн |
| 100+ | 120.46 грн |
| 500+ | 95.66 грн |
| 1000+ | 81.17 грн |
| SI4447DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Description: MOSFET P-CH 40V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.61 грн |
| 10+ | 43.54 грн |
| 100+ | 30.16 грн |
| 500+ | 23.65 грн |
| 1000+ | 20.13 грн |
| SI4463BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
на замовлення 4957 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 100.95 грн |
| 10+ | 80.71 грн |
| 100+ | 64.27 грн |
| 500+ | 51.03 грн |
| 1000+ | 43.3 грн |
| SI4464DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
товар відсутній
| SI4465ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
на замовлення 2121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.7 грн |
| 10+ | 98.58 грн |
| 100+ | 78.44 грн |
| 500+ | 62.28 грн |
| 1000+ | 52.85 грн |
| SI4472DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A 8-SOIC
Description: MOSFET N-CH 150V 7.7A 8-SOIC
на замовлення 1692 шт:
термін постачання 21-31 дні (днів)| SI4483ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 19.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: MOSFET P-CH 30V 19.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 27044 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.78 грн |
| 10+ | 60.31 грн |
| 100+ | 46.93 грн |
| 500+ | 37.33 грн |
| 1000+ | 30.41 грн |
| SI4487DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 11.6A 8-SOIC
Description: MOSFET P-CH 30V 11.6A 8-SOIC
на замовлення 9523 шт:
термін постачання 21-31 дні (днів)| SI4488DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
на замовлення 5177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.47 грн |
| 10+ | 113.57 грн |
| 100+ | 90.42 грн |
| 500+ | 71.8 грн |
| 1000+ | 60.92 грн |
| SI4490DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Description: MOSFET N-CH 200V 2.85A 8SO
на замовлення 1876 шт:
термін постачання 21-31 дні (днів)| SI4497DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
Description: MOSFET P-CH 30V 36A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9685 pF @ 15 V
на замовлення 26544 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.3 грн |
| 10+ | 94.13 грн |
| 100+ | 74.93 грн |
| 500+ | 59.5 грн |
| 1000+ | 50.48 грн |
| SI4500BDY-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.6A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 20V 6.6A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| SI4501ADY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V/8V 6.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| SI4511DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| SI4564DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 10A/9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| SI4599DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W, 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 7851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 56.87 грн |
| 10+ | 47.71 грн |
| 100+ | 33.04 грн |
| 500+ | 25.91 грн |
| 1000+ | 22.05 грн |
| SI4620DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 8-SOIC
Description: MOSFET N-CH 30V 6A 8-SOIC
на замовлення 268 шт:
термін постачання 21-31 дні (днів)| SI4636DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
Description: MOSFET N-CH 30V 17A 8-SOIC
на замовлення 211 шт:
термін постачання 21-31 дні (днів)| SI4654DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8-SOIC
Description: MOSFET N-CH 25V 28.6A 8-SOIC
на замовлення 4878 шт:
термін постачання 21-31 дні (днів)| SI4666DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Description: MOSFET N-CH 25V 16.5A 8-SOIC
на замовлення 9639 шт:
термін постачання 21-31 дні (днів)| SI4778DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
товар відсутній
| SI4812BDY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
товар відсутній
| SI4823DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.1A 8-SOIC
Description: MOSFET P-CH 20V 4.1A 8-SOIC
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)