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SI4909DY-T1-GE3 SI4909DY-T1-GE3 Vishay Siliconix si4909dy.pdf Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
3+112.35 грн
10+68.17 грн
100+45.45 грн
500+33.51 грн
1000+30.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix sib410dk.pdf Description: MOSFET N-CH 30V 9A 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix sir876adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 5009 шт:
термін постачання 21-31 дні (днів)
3+147.04 грн
10+98.72 грн
100+71.77 грн
500+53.93 грн
1000+52.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 Vishay Siliconix sq2310es.pdf Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
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SQ7415AEN-T1_GE3 SQ7415AEN-T1_GE3 Vishay Siliconix sq7415aen.pdf Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 SI8425DB-T1-E1 Vishay Siliconix si8425db.pdf Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 SI8425DB-T1-E1 Vishay Siliconix si8425db.pdf Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 2862 шт:
термін постачання 21-31 дні (днів)
6+59.48 грн
10+40.01 грн
100+27.26 грн
500+21.26 грн
1000+18.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SI8483DB-T2-E1 SI8483DB-T2-E1 Vishay Siliconix si8483db.pdf Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+13.95 грн
6000+12.99 грн
9000+12.55 грн
15000+11.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI8483DB-T2-E1 SI8483DB-T2-E1 Vishay Siliconix si8483db.pdf Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 16799 шт:
термін постачання 21-31 дні (днів)
7+53.70 грн
10+33.73 грн
100+24.15 грн
500+18.02 грн
1000+16.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 SIP32429DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+81.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Vishay Siliconix sia459edj.pdf Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+11.94 грн
6000+10.91 грн
9000+10.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 SI7655ADN-T1-GE3 Vishay Siliconix si7655adn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+26.80 грн
6000+23.96 грн
9000+23.02 грн
15000+21.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7315DN-T1-GE3 SI7315DN-T1-GE3 Vishay Siliconix si7315dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+34.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY-T1-GE3 Vishay Siliconix SI4038DY.pdf Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 Vishay Siliconix Si1865DDL.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 SIP32429DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 23584 шт:
термін постачання 21-31 дні (днів)
2+251.96 грн
10+158.06 грн
100+110.28 грн
500+90.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Vishay Siliconix sia459edj.pdf Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 16938 шт:
термін постачання 21-31 дні (днів)
10+35.52 грн
11+29.12 грн
100+20.26 грн
500+14.85 грн
1000+12.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 SI7655ADN-T1-GE3 Vishay Siliconix si7655adn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 16314 шт:
термін постачання 21-31 дні (днів)
4+102.44 грн
10+62.29 грн
100+41.37 грн
500+30.38 грн
1000+27.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY-T1-GE3 Vishay Siliconix SI4038DY.pdf Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 Vishay Siliconix Si1865DDL.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 4698 шт:
термін постачання 21-31 дні (днів)
10+34.70 грн
16+20.21 грн
100+12.78 грн
500+8.95 грн
1000+7.97 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
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SIP12108DMP-T1GE4 SIP12108DMP-T1GE4 Vishay Siliconix sip12108.pdf Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+83.16 грн
Мінімальне замовлення: 2500
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SIP12108DMP-T1GE4 SIP12108DMP-T1GE4 Vishay Siliconix sip12108.pdf Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+161.91 грн
10+115.51 грн
25+105.32 грн
100+88.32 грн
250+83.29 грн
500+80.27 грн
1000+76.50 грн
Мінімальне замовлення: 3
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DG309DY DG309DY Vishay Siliconix DG308A,DG309.pdf Description: IC SWITCH QUAD SPST/CMOS 16SOIC
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DG401DY DG401DY Vishay Siliconix DG401,403,405_Rev2009.pdf Description: IC SWITCH SPST-NOX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
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2N4117A 2N4117A Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-2 2N4117A-2 Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-E3 2N4117A-E3 Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4118A 2N4118A Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4118A-2 2N4118A-2 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4118A-E3 2N4118A-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4119A 2N4119A Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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2N4119A-2 2N4119A-2 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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2N4119A-E3 2N4119A-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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2N4338 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4338-2 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4338-E3 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4339 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
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2N4339-2 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
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2N4339-E3 Vishay Siliconix 2N4338-4341.pdf Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
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2N4391-2 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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2N4391-E3 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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2N4392-2 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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2N4392-E3 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
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2N4393-2 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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2N4393-E3 Vishay Siliconix 2N%2CPN%2CSST4391.pdf Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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2N4416 2N4416 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf description Description: JFET N-CH 30V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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2N4416A-2 2N4416A-2 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf Description: JFET N-CH 35V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
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2N4416A-E3 2N4416A-E3 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf Description: JFET N-CH 35V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
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2N4416-E3 2N4416-E3 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf Description: JFET N-CH 30V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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2N4856JAN02 Vishay Siliconix Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N4856JTX02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N4856JTXL02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N4856JTXV02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N4857JAN02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N4857JTX02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4857JTXL02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
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2N4857JTXV02 Vishay Siliconix alucapsreach.pdf Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.35 грн
10+68.17 грн
100+45.45 грн
500+33.51 грн
1000+30.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB410DK-T1-GE3 sib410dk.pdf
SIB410DK-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
товару немає в наявності
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SIR876ADP-T1-GE3 sir876adp.pdf
SIR876ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 5009 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.04 грн
10+98.72 грн
100+71.77 грн
500+53.93 грн
1000+52.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 sq2310es.pdf
SQ2310ES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
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SQ7415AEN-T1_GE3 sq7415aen.pdf
SQ7415AEN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 si8425db.pdf
SI8425DB-T1-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 si8425db.pdf
SI8425DB-T1-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 2862 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.48 грн
10+40.01 грн
100+27.26 грн
500+21.26 грн
1000+18.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SI8483DB-T2-E1 si8483db.pdf
SI8483DB-T2-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.95 грн
6000+12.99 грн
9000+12.55 грн
15000+11.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI8483DB-T2-E1 si8483db.pdf
SI8483DB-T2-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 16799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.70 грн
10+33.73 грн
100+24.15 грн
500+18.02 грн
1000+16.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 sip32429.pdf
SIP32429DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+81.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.94 грн
6000+10.91 грн
9000+10.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 si7655adn.pdf
SI7655ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+26.80 грн
6000+23.96 грн
9000+23.02 грн
15000+21.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7315DN-T1-GE3 si7315dn.pdf
SI7315DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY.pdf
SI4038DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
товару немає в наявності
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SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 sip32429.pdf
SIP32429DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 23584 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.96 грн
10+158.06 грн
100+110.28 грн
500+90.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
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SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 16938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.52 грн
11+29.12 грн
100+20.26 грн
500+14.85 грн
1000+12.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 si7655adn.pdf
SI7655ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 16314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.44 грн
10+62.29 грн
100+41.37 грн
500+30.38 грн
1000+27.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY.pdf
SI4038DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
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SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 4698 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.70 грн
16+20.21 грн
100+12.78 грн
500+8.95 грн
1000+7.97 грн
Мінімальне замовлення: 10
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SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
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SIP12108DMP-T1GE4 sip12108.pdf
SIP12108DMP-T1GE4
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+83.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIP12108DMP-T1GE4 sip12108.pdf
SIP12108DMP-T1GE4
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+161.91 грн
10+115.51 грн
25+105.32 грн
100+88.32 грн
250+83.29 грн
500+80.27 грн
1000+76.50 грн
Мінімальне замовлення: 3
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DG309DY DG308A,DG309.pdf
DG309DY
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST/CMOS 16SOIC
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DG401DY DG401,403,405_Rev2009.pdf
DG401DY
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
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2N4117A 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-2 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A-2
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-E3 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4118A 2N,PN,SST4117A Series.pdf
2N4118A
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4118A-2 2N,PN,SST4117A Series.pdf
2N4118A-2
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4118A-E3 2N,PN,SST4117A Series.pdf
2N4118A-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
товару немає в наявності
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2N4119A 2N%2CPN%2CSST4117A%20Series.pdf
2N4119A
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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2N4119A-2 2N,PN,SST4117A Series.pdf
2N4119A-2
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
товару немає в наявності
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2N4119A-E3 2N,PN,SST4117A Series.pdf
2N4119A-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
товару немає в наявності
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2N4338 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4338-2 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4338-E3 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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2N4339 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
товару немає в наявності
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2N4339-2 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
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2N4339-E3 2N4338-4341.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
товару немає в наявності
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2N4391-2 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
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2N4391-E3 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
товару немає в наявності
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2N4392-2 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
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2N4392-E3 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
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2N4393-2 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
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2N4393-E3 2N%2CPN%2CSST4391.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
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2N4416 description 2N4416%2C2N4416A.SST4416.pdf
2N4416
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
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2N4416A-2 2N4416%2C2N4416A.SST4416.pdf
2N4416A-2
Виробник: Vishay Siliconix
Description: JFET N-CH 35V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
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2N4416A-E3 2N4416%2C2N4416A.SST4416.pdf
2N4416A-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 35V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
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2N4416-E3 2N4416%2C2N4416A.SST4416.pdf
2N4416-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
2N4856JAN02
Виробник: Vishay Siliconix
Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4856JTX02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4856JTXL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4856JTXV02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4857JAN02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4857JTX02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4857JTXL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2N4857JTXV02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
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