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DG1413EQ-T1-GE3 DG1413EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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SIP32462DB-T2-GE1 SIP32462DB-T2-GE1 Vishay Siliconix sip32461.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 8861 шт:
термін постачання 21-31 дні (днів)
8+46.81 грн
10+39.76 грн
25+37.31 грн
100+28.59 грн
250+26.55 грн
500+22.60 грн
1000+17.78 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DG1411EN-T1-GE4 DG1411EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1412EN-T1-GE4 DG1412EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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В кошику  од. на суму  грн.
DG1413EN-T1-GE4 DG1413EN-T1-GE4 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1411EQ-T1-GE3 DG1411EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG1412EQ-T1-GE3 DG1412EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
В кошику  од. на суму  грн.
DG1413EQ-T1-GE3 DG1413EQ-T1-GE3 Vishay Siliconix DG141x.pdf Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
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IRF740BPBF IRF740BPBF Vishay Siliconix irf740b.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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IRF830BPBF IRF830BPBF Vishay Siliconix irf830b.pdf Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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IRF840BPBF IRF840BPBF Vishay Siliconix irf840b.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
3+151.28 грн
50+70.20 грн
100+62.88 грн
500+46.96 грн
1000+43.08 грн
2000+39.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHB10N40D-GE3 SIHB10N40D-GE3 Vishay Siliconix sihb10n40d.pdf Description: MOSFET N-CH 400V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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SIHB8N50D-GE3 SIHB8N50D-GE3 Vishay Siliconix sihb8n50d.pdf Description: MOSFET N-CH 500V 8.7A D2PAK
товару немає в наявності
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SIHP10N40D-GE3 SIHP10N40D-GE3 Vishay Siliconix sihp10n40d.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIHP6N40D-GE3 SIHP6N40D-GE3 Vishay Siliconix sihp6n40d.pdf Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
3+129.55 грн
50+59.48 грн
100+53.06 грн
500+39.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHU3N50D-GE3 SIHU3N50D-GE3 Vishay Siliconix sihu3n50d.pdf Description: MOSFET N-CH 500V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
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SIHU5N50D-GE3 SIHU5N50D-GE3 Vishay Siliconix sihu5n50d.pdf Description: MOSFET N-CH 500V 5.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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IRFP460BPBF IRFP460BPBF Vishay Siliconix sihg460b.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
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SIHP8N50D-GE3 SIHP8N50D-GE3 Vishay Siliconix sihp8n50d.pdf Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
3+138.74 грн
50+64.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4202DY-T1-GE3 SI4202DY-T1-GE3 Vishay Siliconix si4202dy.pdf Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
2500+41.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix si4288dy.pdf Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4909DY-T1-GE3 SI4909DY-T1-GE3 Vishay Siliconix si4909dy.pdf Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+30.65 грн
5000+27.40 грн
7500+26.31 грн
12500+24.46 грн
Мінімальне замовлення: 2500
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SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix sib410dk.pdf Description: MOSFET N-CH 30V 9A 8SO
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SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix sir876adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+49.79 грн
6000+46.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 Vishay Siliconix sq2310es.pdf Description: MOSFET N-CH 20V 6A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ7415AEN-T1_GE3 SQ7415AEN-T1_GE3 Vishay Siliconix sq7415aen.pdf Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQM120N04-1m7L_GE3 SQM120N04-1m7L_GE3 Vishay Siliconix sqm120n0.pdf Description: MOSFET N-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)
2+317.61 грн
10+201.94 грн
100+142.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUD42N03-3M9P-GE3 SUD42N03-3M9P-GE3 Vishay Siliconix SUD42N03-3m9P.pdf Description: MOSFET N-CH 30V 42A TO252
товару немає в наявності
В кошику  од. на суму  грн.
SI4202DY-T1-GE3 SI4202DY-T1-GE3 Vishay Siliconix si4202dy.pdf Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 4846 шт:
термін постачання 21-31 дні (днів)
3+148.77 грн
10+91.35 грн
100+61.56 грн
500+45.81 грн
1000+41.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4288DY-T1-GE3 SI4288DY-T1-GE3 Vishay Siliconix si4288dy.pdf Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2603 шт:
термін постачання 21-31 дні (днів)
3+138.74 грн
10+84.91 грн
100+57.26 грн
500+42.61 грн
1000+39.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4909DY-T1-GE3 SI4909DY-T1-GE3 Vishay Siliconix si4909dy.pdf Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
3+113.67 грн
10+68.98 грн
100+45.98 грн
500+33.90 грн
1000+30.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB410DK-T1-GE3 SIB410DK-T1-GE3 Vishay Siliconix sib410dk.pdf Description: MOSFET N-CH 30V 9A 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIR876ADP-T1-GE3 SIR876ADP-T1-GE3 Vishay Siliconix sir876adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 7384 шт:
термін постачання 21-31 дні (днів)
2+173.01 грн
10+107.21 грн
100+73.16 грн
500+54.98 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 SQ2310ES-T1_GE3 Vishay Siliconix sq2310es.pdf Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ7415AEN-T1_GE3 SQ7415AEN-T1_GE3 Vishay Siliconix sq7415aen.pdf Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 SI8425DB-T1-E1 Vishay Siliconix si8425db.pdf Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8425DB-T1-E1 SI8425DB-T1-E1 Vishay Siliconix si8425db.pdf Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 2862 шт:
термін постачання 21-31 дні (днів)
6+60.18 грн
10+40.48 грн
100+27.58 грн
500+21.51 грн
1000+18.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SI8483DB-T2-E1 SI8483DB-T2-E1 Vishay Siliconix si8483db.pdf Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+14.11 грн
6000+13.15 грн
9000+12.70 грн
15000+11.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI8483DB-T2-E1 SI8483DB-T2-E1 Vishay Siliconix si8483db.pdf Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 16799 шт:
термін постачання 21-31 дні (днів)
7+54.33 грн
10+34.13 грн
100+24.44 грн
500+18.23 грн
1000+16.42 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 SIP32429DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
2500+83.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Vishay Siliconix sia459edj.pdf Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+12.08 грн
6000+11.04 грн
9000+10.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 SI7655ADN-T1-GE3 Vishay Siliconix si7655adn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+27.12 грн
6000+24.24 грн
9000+23.29 грн
15000+21.69 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7315DN-T1-GE3 SI7315DN-T1-GE3 Vishay Siliconix si7315dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+35.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY-T1-GE3 Vishay Siliconix SI4038DY.pdf Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 Vishay Siliconix Si1865DDL.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 SIP32429DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 36869 шт:
термін постачання 21-31 дні (днів)
2+256.59 грн
10+160.97 грн
100+112.34 грн
500+91.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
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SIA459EDJ-T1-GE3 SIA459EDJ-T1-GE3 Vishay Siliconix sia459edj.pdf Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 16938 шт:
термін постачання 21-31 дні (днів)
10+35.94 грн
11+29.46 грн
100+20.50 грн
500+15.02 грн
1000+12.21 грн
Мінімальне замовлення: 10
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SI7655ADN-T1-GE3 SI7655ADN-T1-GE3 Vishay Siliconix si7655adn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15814 шт:
термін постачання 21-31 дні (днів)
4+103.64 грн
10+63.02 грн
100+41.85 грн
500+30.74 грн
1000+27.99 грн
Мінімальне замовлення: 4
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SI4038DY-T1-GE3 SI4038DY-T1-GE3 Vishay Siliconix SI4038DY.pdf Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
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SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 Vishay Siliconix Si1865DDL.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 4698 шт:
термін постачання 21-31 дні (днів)
10+35.10 грн
16+20.44 грн
100+12.93 грн
500+9.06 грн
1000+8.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 SIR646DP-T1-GE3 Vishay Siliconix sir646dp.pdf Description: MOSFET N-CH 40V 60A PPAK 8SO
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SIP12108DMP-T1GE4 SIP12108DMP-T1GE4 Vishay Siliconix sip12108.pdf Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+84.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIP12108DMP-T1GE4 SIP12108DMP-T1GE4 Vishay Siliconix sip12108.pdf Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+163.82 грн
10+116.86 грн
25+106.56 грн
100+89.35 грн
250+84.27 грн
500+81.21 грн
1000+77.40 грн
Мінімальне замовлення: 3
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DG309DY DG309DY Vishay Siliconix DG308A,DG309.pdf Description: IC SWITCH QUAD SPST/CMOS 16SOIC
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DG401DY DG401DY Vishay Siliconix DG401,403,405_Rev2009.pdf Description: IC SWITCH SPST-NOX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
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2N4117A 2N4117A Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-2 2N4117A-2 Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-E3 2N4117A-E3 Vishay Siliconix 2N%2CPN%2CSST4117A%20Series.pdf Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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DG1413EQ-T1-GE3 DG141x.pdf
DG1413EQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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SIP32462DB-T2-GE1 sip32461.pdf
SIP32462DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 8861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.81 грн
10+39.76 грн
25+37.31 грн
100+28.59 грн
250+26.55 грн
500+22.60 грн
1000+17.78 грн
Мінімальне замовлення: 8
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DG1411EN-T1-GE4 DG141x.pdf
DG1411EN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1412EN-T1-GE4 DG141x.pdf
DG1412EN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 1.8OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1413EN-T1-GE4 DG141x.pdf
DG1413EN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 1.5OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1411EQ-T1-GE3 DG141x.pdf
DG1411EQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1412EQ-T1-GE3 DG141x.pdf
DG1412EQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NOX4 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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DG1413EQ-T1-GE3 DG141x.pdf
DG1413EQ-T1-GE3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NC 1.8OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 550pA
Part Status: Obsolete
Number of Circuits: 4
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IRF740BPBF irf740b.pdf
IRF740BPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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IRF830BPBF irf830b.pdf
IRF830BPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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IRF840BPBF irf840b.pdf
IRF840BPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.28 грн
50+70.20 грн
100+62.88 грн
500+46.96 грн
1000+43.08 грн
2000+39.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHB10N40D-GE3 sihb10n40d.pdf
SIHB10N40D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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SIHB8N50D-GE3 sihb8n50d.pdf
SIHB8N50D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A D2PAK
товару немає в наявності
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SIHP10N40D-GE3 sihp10n40d.pdf
SIHP10N40D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIHP6N40D-GE3 sihp6n40d.pdf
SIHP6N40D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.55 грн
50+59.48 грн
100+53.06 грн
500+39.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHU3N50D-GE3 sihu3n50d.pdf
SIHU3N50D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
товару немає в наявності
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SIHU5N50D-GE3 sihu5n50d.pdf
SIHU5N50D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
товару немає в наявності
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IRFP460BPBF sihg460b.pdf
IRFP460BPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3094 pF @ 100 V
товару немає в наявності
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SIHP8N50D-GE3 sihp8n50d.pdf
SIHP8N50D-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.74 грн
50+64.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4202DY-T1-GE3 si4202dy.pdf
SI4202DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+41.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4288DY-T1-GE3 si4288dy.pdf
SI4288DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
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SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.65 грн
5000+27.40 грн
7500+26.31 грн
12500+24.46 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIB410DK-T1-GE3 sib410dk.pdf
SIB410DK-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
товару немає в наявності
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SIR876ADP-T1-GE3 sir876adp.pdf
SIR876ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.79 грн
6000+46.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 sq2310es.pdf
SQ2310ES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 6A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
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SQ7415AEN-T1_GE3 sq7415aen.pdf
SQ7415AEN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
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SQM120N04-1m7L_GE3 sqm120n0.pdf
SQM120N04-1m7L_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+317.61 грн
10+201.94 грн
100+142.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUD42N03-3M9P-GE3 SUD42N03-3m9P.pdf
SUD42N03-3M9P-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 42A TO252
товару немає в наявності
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SI4202DY-T1-GE3 si4202dy.pdf
SI4202DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 4846 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.77 грн
10+91.35 грн
100+61.56 грн
500+45.81 грн
1000+41.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4288DY-T1-GE3 si4288dy.pdf
SI4288DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.74 грн
10+84.91 грн
100+57.26 грн
500+42.61 грн
1000+39.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 18071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.67 грн
10+68.98 грн
100+45.98 грн
500+33.90 грн
1000+30.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIB410DK-T1-GE3 sib410dk.pdf
SIB410DK-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 8SO
товару немає в наявності
В кошику  од. на суму  грн.
SIR876ADP-T1-GE3 sir876adp.pdf
SIR876ADP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 50 V
на замовлення 7384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.01 грн
10+107.21 грн
100+73.16 грн
500+54.98 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ2310ES-T1_GE3 sq2310es.pdf
SQ2310ES-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 6A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SQ7415AEN-T1_GE3 sq7415aen.pdf
SQ7415AEN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
товару немає в наявності
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SI8425DB-T1-E1 si8425db.pdf
SI8425DB-T1-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
товару немає в наявності
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SI8425DB-T1-E1 si8425db.pdf
SI8425DB-T1-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 2862 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.18 грн
10+40.48 грн
100+27.58 грн
500+21.51 грн
1000+18.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SI8483DB-T2-E1 si8483db.pdf
SI8483DB-T2-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.11 грн
6000+13.15 грн
9000+12.70 грн
15000+11.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI8483DB-T2-E1 si8483db.pdf
SI8483DB-T2-E1
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
на замовлення 16799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+54.33 грн
10+34.13 грн
100+24.44 грн
500+18.23 грн
1000+16.42 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 sip32429.pdf
SIP32429DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+83.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
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SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.08 грн
6000+11.04 грн
9000+10.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 si7655adn.pdf
SI7655ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.12 грн
6000+24.24 грн
9000+23.29 грн
15000+21.69 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7315DN-T1-GE3 si7315dn.pdf
SI7315DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+35.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY.pdf
SI4038DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
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SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32429DN-T1-GE4 sip32429.pdf
SIP32429DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Part Status: Active
на замовлення 36869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.59 грн
10+160.97 грн
100+112.34 грн
500+91.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
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SIA459EDJ-T1-GE3 sia459edj.pdf
SIA459EDJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V
на замовлення 16938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.94 грн
11+29.46 грн
100+20.50 грн
500+15.02 грн
1000+12.21 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SI7655ADN-T1-GE3 si7655adn.pdf
SI7655ADN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
на замовлення 15814 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.64 грн
10+63.02 грн
100+41.85 грн
500+30.74 грн
1000+27.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4038DY-T1-GE3 SI4038DY.pdf
SI4038DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
товару немає в наявності
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SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Voltage - Load: 1.8V ~ 12V
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
на замовлення 4698 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.10 грн
16+20.44 грн
100+12.93 грн
500+9.06 грн
1000+8.07 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIR646DP-T1-GE3 sir646dp.pdf
SIR646DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK 8SO
товару немає в наявності
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SIP12108DMP-T1GE4 sip12108.pdf
SIP12108DMP-T1GE4
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+84.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIP12108DMP-T1GE4 sip12108.pdf
SIP12108DMP-T1GE4
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 5A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+163.82 грн
10+116.86 грн
25+106.56 грн
100+89.35 грн
250+84.27 грн
500+81.21 грн
1000+77.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG309DY DG308A,DG309.pdf
DG309DY
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST/CMOS 16SOIC
товару немає в наявності
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DG401DY DG401,403,405_Rev2009.pdf
DG401DY
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
товару немає в наявності
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2N4117A 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
2N4117A-2 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A-2
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
2N4117A-E3 2N%2CPN%2CSST4117A%20Series.pdf
2N4117A-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
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