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2N4861JTXV02 Vishay Siliconix Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114-E3 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JAN02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTVL02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTX02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTXL02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTXV02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5115-E3 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JAN02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JTVL02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH 30V TO-18
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2N5115JTX02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JTXL02 Vishay Siliconix Description: JFET P-CH 30V TO-18
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2N5115JTXV02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116-E3 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JAN02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JTVL02 Vishay Siliconix Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JTX02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH 30V TO-18
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2N5116JTXL02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH 30V TO-18
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2N5116JTXV02 Vishay Siliconix alucapsreach.pdf Description: JFET P-CH 30V TO-18
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2N5432 Vishay Siliconix 2N5432%20thru%202N5434.pdf Description: JFET N-CH 25V TO-52
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2N5432-2 Vishay Siliconix 2N5432 thru 2N5434.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
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2N5432-E3 Vishay Siliconix 2N5432%20thru%202N5434.pdf Description: JFET N-CH 25V TO-52
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2N5433 Vishay Siliconix 2N5432%20thru%202N5434.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5433-2 Vishay Siliconix 2N5432%20thru%202N5434.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5433-E3 Vishay Siliconix 2N5432%20thru%202N5434.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5545JTX01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5545JTXL01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5545JTXV01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5546JTX01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5546JTXL01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5546JTXV01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5547JTX01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5547JTXL01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N5547JTXV01 Vishay Siliconix Description: JFET N-CH 50V TO-71
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2N6660-2 2N6660-2 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6660-E3 2N6660-E3 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6660JTVP02 2N6660JTVP02 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6660JTX02 2N6660JTX02 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXL02 2N6660JTXL02 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXP02 2N6660JTXP02 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXV02 2N6660JTXV02 Vishay Siliconix 2N6660%282%29%2C2N6660JANTX%28V%29.pdf Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6661-2 2N6661-2 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6661-E3 2N6661-E3 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6661JAN02 2N6661JAN02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6661JTVP02 2N6661JTVP02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTX02 2N6661JTX02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXL02 2N6661JTXL02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXP02 2N6661JTXP02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXV02 2N6661JTXV02 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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3N163 3N163 Vishay Siliconix 3N163%2C3N164.pdf Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N163-2 3N163-2 Vishay Siliconix 3N163%2C3N164.pdf Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N163-E3 3N163-E3 Vishay Siliconix 3N163%2C3N164.pdf Description: MOSFET P-CH 40V 50MA TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N164 3N164 Vishay Siliconix 3N163%2C3N164.pdf Description: MOSFET P-CH 30V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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DG180AP Vishay Siliconix 70031.pdf Description: IC SWITCH DUAL SPST 14-DIP
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DG181AA Vishay Siliconix DG180%2C181%2C182.pdf Description: IC SW SPST-NCX2 30OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG181AA/883 Vishay Siliconix DG180%2C181%2C182.pdf Description: IC SW SPST-NCX2 30OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG181AP Vishay Siliconix 70031.pdf Description: IC SWITCH DUAL SPST 14-DIP
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DG181AP/883 Vishay Siliconix 70031.pdf Description: IC SWITCH DUAL SPST 14-DIP
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DG183AP/883 DG183AP/883 Vishay Siliconix DG183%2C184%2C185.pdf Description: IC SWITCH DPST-NOX2 10OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG183BP Vishay Siliconix 70032.pdf Description: IC SWITCH DUAL DPST 16DIP
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2N4861JTXV02
Виробник: Vishay Siliconix
Description: JFET N-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114-E3
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JAN02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTVL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTX02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTXL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5114JTXV02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
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2N5115-E3
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JAN02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JTVL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO-18
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2N5115JTX02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5115JTXL02
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO-18
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2N5115JTXV02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116-E3
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JAN02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JTVL02
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
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2N5116JTX02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO-18
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2N5116JTXL02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO-18
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2N5116JTXV02 alucapsreach.pdf
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO-18
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2N5432 2N5432%20thru%202N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO-52
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2N5432-2 2N5432 thru 2N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
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2N5432-E3 2N5432%20thru%202N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO-52
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2N5433 2N5432%20thru%202N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5433-2 2N5432%20thru%202N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5433-E3 2N5432%20thru%202N5434.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
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2N5545JTX01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5545JTXL01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5545JTXV01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5546JTX01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5546JTXL01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5546JTXV01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5547JTX01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5547JTXL01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N5547JTXV01
Виробник: Vishay Siliconix
Description: JFET N-CH 50V TO-71
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2N6660-2 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660-2
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6660-E3 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6660JTVP02 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660JTVP02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6660JTX02 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660JTX02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXL02 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660JTXL02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXP02 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660JTXP02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6660JTXV02 2N6660%282%29%2C2N6660JANTX%28V%29.pdf
2N6660JTXV02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6661-2 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661-2
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6661-E3 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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2N6661JAN02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JAN02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Military
Qualification: MIL-PRF-19500
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2N6661JTVP02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JTVP02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTX02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JTX02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXL02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JTXL02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXP02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JTXP02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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2N6661JTXV02 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661JTXV02
Виробник: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
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3N163 3N163%2C3N164.pdf
3N163
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N163-2 3N163%2C3N164.pdf
3N163-2
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N163-E3 3N163%2C3N164.pdf
3N163-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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3N164 3N163%2C3N164.pdf
3N164
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
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DG180AP 70031.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
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DG181AA DG180%2C181%2C182.pdf
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX2 30OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG181AA/883 DG180%2C181%2C182.pdf
Виробник: Vishay Siliconix
Description: IC SW SPST-NCX2 30OHM TO100-10
Packaging: Tube
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG181AP 70031.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
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DG181AP/883 70031.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
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DG183AP/883 DG183%2C184%2C185.pdf
DG183AP/883
Виробник: Vishay Siliconix
Description: IC SWITCH DPST-NOX2 10OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG183BP 70032.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16DIP
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