| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SMCJ12CA-E3/9AT | VISHAY |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ12CA-M3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ12CA-M3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
| VS-70TPS16-M3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT Type of thyristor: standard Max. off-state voltage: 1.6kV Max. load current: 75A Load current: 70A Gate current: 100mA Case: TO247-3 Mounting: THT Max. forward impulse current: 930A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
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RCA0805475RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW0805475RFHEAP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 2x1.25x0.5mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW0805475RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 2x1.25x0.45mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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TSTA7100 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT Type of diode: IR transmitter LED diameter: 5.5mm Wavelength: 875nm LED lens: transparent Radiant power: 50mW Viewing angle: 5° Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| VS-16CTQ080-1HM3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV Type of diode: Schottky rectifying Case: TO262AA Mounting: THT Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VS-16CTQ080-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.88V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080SHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080STRL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080STRLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080STRR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-16CTQ080STRRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MSE1PD-M3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 780ns Semiconductor structure: single diode Capacitance: 5pF Case: DO219AD; microSMP Max. forward voltage: 0.98V Max. forward impulse current: 20A Leakage current: 50µA Kind of package: 7 inch reel Manufacturer standard package: 4500pcs. |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | |||||||||||||||
| MSE1PDHM3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: DO219AD; microSMP Max. forward voltage: 1.2V Max. forward impulse current: 15A |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | |||||||||||||||
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RCA08051R00JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Resistance: 1Ω Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW08051R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 100000 шт: термін постачання 14-30 дні (днів) |
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CRCW080551R1FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 51.1Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 45000 шт: термін постачання 14-30 дні (днів) |
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CRCW0805121RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 121Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 100000 шт: термін постачання 14-30 дні (днів) |
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PR01000101508JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Resistance: 1.5Ω Mounting: THT Power: 1W Tolerance: ±5% Operating voltage: 350V Body dimensions: Ø2.5x8mm Temperature coefficient: 250ppm/°C Length: 8mm Diameter: 2.5mm Leads: axial Resistor features: high power and small dimension |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SMM02070C1508FBP00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm Type of resistor: thin film Resistance: 1.5Ω Mounting: SMD Case: MELF Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIDR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIDR5102EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIDR510EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIDR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
| SIJH112E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 225A Pulsed drain current: 300A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
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SIR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIR512DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80.7A Pulsed drain current: 300A Power dissipation: 96.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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Z4KE200A-E3/54 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 5500 шт В кошику од. на суму грн. | ||||||||||||||
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P4KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE Type of diode: TVS Case: DO41 Mounting: THT Semiconductor structure: unidirectional Kind of package: 13 inch reel Leakage current: 1µA Breakdown voltage: 190V Manufacturer series: P4KE Max. forward impulse current: 1.5A Peak pulse power dissipation: 0.4kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 171V |
товару немає в наявності |
Мінімальне замовлення: 5500 шт В кошику од. на суму грн. | ||||||||||||||
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Z4KE200A-E3/73 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FEP16GT-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 125A Case: TO220AB Kind of package: tube Max. forward voltage: 1.3V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns |
на замовлення 577 шт: термін постачання 14-30 дні (днів) |
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GBU6J-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU6J-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU6J-M3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMA02040C6800FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V Type of resistor: thin film Resistance: 680Ω Case - inch: 0204 Case - mm: 0510 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 50ppm/°C Body dimensions: Ø1.4x3.6mm Case: MiniMELF Conform to the norm: AEC-Q200 Quantity in set/package: 3000pcs. Diameter: 1.4mm Mounting: SMD Operating temperature: -55...155°C Length: 3.6mm |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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SMBJ100CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ100CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ100CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 9600 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ100CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
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SMCJ100CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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ZMY62-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY Type of diode: Zener Power dissipation: 1W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Case: DO213AB; MELF glass Semiconductor structure: single diode Manufacturer series: ZMY |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||
| DG412LEDY-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DG412HSDY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
| DG412LEDQ-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||||||
| DG412LEDY-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
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SMAJ40CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805Y681KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
| WR404140A2202J4100 | VISHAY |
Category: THT Resistors Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs. Type of resistor: metal oxide Resistance: 22kΩ Mounting: THT Power: 2W Tolerance: ±5% Operating voltage: 500V Body dimensions: Ø3.9x10mm Operating temperature: -55...200°C Temperature coefficient: 200ppm/°C Quantity in set/package: 1000pcs. |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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BZT52B27-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. |
| SMCJ12CA-E3/9AT |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SMCJ12CA-M3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| SMCJ12CA-M3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| VS-70TPS16-M3 |
Виробник: VISHAY
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT
Type of thyristor: standard
Max. off-state voltage: 1.6kV
Max. load current: 75A
Load current: 70A
Gate current: 100mA
Case: TO247-3
Mounting: THT
Max. forward impulse current: 930A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT
Type of thyristor: standard
Max. off-state voltage: 1.6kV
Max. load current: 75A
Load current: 70A
Gate current: 100mA
Case: TO247-3
Mounting: THT
Max. forward impulse current: 930A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| RCA0805475RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| CRCW0805475RFHEAP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW0805475RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.45mm
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.45mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TSTA7100 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Type of diode: IR transmitter
LED diameter: 5.5mm
Wavelength: 875nm
LED lens: transparent
Radiant power: 50mW
Viewing angle: 5°
Mounting: THT
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Type of diode: IR transmitter
LED diameter: 5.5mm
Wavelength: 875nm
LED lens: transparent
Radiant power: 50mW
Viewing angle: 5°
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-16CTQ080-1HM3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV
Type of diode: Schottky rectifying
Case: TO262AA
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV
Type of diode: Schottky rectifying
Case: TO262AA
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| VS-16CTQ080-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
товару немає в наявності
В кошику
од. на суму грн.
| VS-16CTQ080S-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
товару немає в наявності
В кошику
од. на суму грн.
| VS-16CTQ080SHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| VS-16CTQ080STRL-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| VS-16CTQ080STRLHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
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| VS-16CTQ080STRR-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| VS-16CTQ080STRRHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
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| MSE1PD-M3/89A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
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Мінімальне замовлення: 4500 шт
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| MSE1PDHM3/89A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
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Мінімальне замовлення: 4500 шт
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| RCA08051R00JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 20000 шт
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| CRCW08051R20FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 100000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 0.74 грн |
| CRCW080551R1FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 45000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 0.25 грн |
| CRCW0805121RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 100000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 0.25 грн |
| PR01000101508JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
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Мінімальне замовлення: 5000 шт
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| SMM02070C1508FBP00 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
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| SIDR870ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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од. на суму грн.
| SIDR5102EP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIDR510EP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIDR870ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SIJH112E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SIR870ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR870ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR512DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| Z4KE200A-E3/54 |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 5500 шт
В кошику
од. на суму грн.
| P4KE200A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
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Мінімальне замовлення: 5500 шт
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| Z4KE200A-E3/73 |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| FEP16GT-E3/45 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
на замовлення 577 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.49 грн |
| 7+ | 67.72 грн |
| 10+ | 65.18 грн |
| 25+ | 62.64 грн |
| 50+ | 60.10 грн |
| 100+ | 58.41 грн |
| 500+ | 55.02 грн |
| GBU6J-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6J-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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В кошику
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| GBU6J-M3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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В кошику
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| MMA02040C6800FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 157+ | 2.92 грн |
| 250+ | 2.18 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.67 грн |
| 1500+ | 1.56 грн |
| 3000+ | 1.43 грн |
| SMBJ100CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| SMBJ100CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SMBJ100CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 9600 шт
В кошику
од. на суму грн.
| SMCJ100CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 15+ | 29.12 грн |
| 100+ | 19.98 грн |
| 850+ | 14.64 грн |
| SMCJ100CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| ZMY62-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.
| DG412LEDY-T1-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DG412HSDY-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| DG412LEDQ-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| DG412LEDY-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SMAJ40CAHE3_A/I |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| VJ0805Y681KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| VJ0805A681FXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| VJ0805A681GXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| VJ0805A681GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| VJ0805A681GXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| VJ0805A681JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| WR404140A2202J4100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Operating temperature: -55...200°C
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Operating temperature: -55...200°C
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| BZT52B27-HE3_A-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| BZT52B24-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.