Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5686) > Сторінка 85 з 95
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WNSC2D04650DJ | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC2D04650DJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-252 (DPAK)tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: 6.5nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - isCanonical: Y usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 801 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650CW6Q | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC6D16650CW6Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-247tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 36nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - isCanonical: Y usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 575 шт: термін постачання 21-31 дні (днів) |
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ACT108W-600E,135 | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - ACT108W-600E,135 - Triac, Schalter, 600 V, 800 mA, SOT-223, 1 V, 8.8 A, 25 mAtariffCode: 85413000 Bauform - Triac: SOT-223 rohsCompliant: YES Haltestrom, max.: 25mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 8.8A Spitzen-Durchlassspannung: 1.3V isCanonical: N MSL: - usEccn: EAR99 euEccn: NLR RMS-Durchlassstrom: 800mA Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 37255 шт: термін постачання 21-31 дні (днів) |
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MUR860J | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - MUR860J - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 8 A, Einfach, 1.25 V, 93 ns, 200 AtariffCode: 85411000 Bauform - Diode: DO-214AB (SMC) Durchlassstoßstrom: 200A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - isCanonical: N Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 93ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 600V Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650B6J | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 36nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - isCanonical: Y usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 435 шт: термін постачання 21-31 дні (днів) |
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WNSC6D16650B6J | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 36nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - isCanonical: N usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 435 шт: термін постачання 21-31 дні (днів) |
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BT1308W-600D,115 | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - BT1308W-600D,115 - Triac, 600 V, 800 mA, SC-73, 1.5 V, 9 A, 10 mAtariffCode: 85413000 Bauform - Triac: SC-73 rohsCompliant: YES Haltestrom, max.: 10mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 9A Spitzen-Durchlassspannung: 1.6V isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 RMS-Durchlassstrom: 800mA euEccn: NLR Zündspannung, max.: 1.5V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 1680 шт: термін постачання 21-31 дні (днів) |
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BTA16-600BQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/70mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Max. forward impulse current: 160A Technology: 4Q |
на замовлення 509 шт: термін постачання 14-30 дні (днів) |
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BTA16-800BQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50/70mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 160A |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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BTA408X-1000C0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 90A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 996 шт: термін постачання 14-30 дні (днів) |
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BT152-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 2533 шт: термін постачання 14-30 дні (днів) |
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BT169D,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Kind of package: bulk Gate current: 50mA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 8A Max. off-state voltage: 0.4kV Type of thyristor: thyristor Quantity in set/package: 1000pcs. Turn-on time: 2µs |
на замовлення 1030 шт: термін постачання 14-30 дні (днів) |
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PHE13009,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB Mounting: THT Type of transistor: NPN Case: TO220AB Current gain: 8...40 Collector current: 12A Power dissipation: 80W Collector-emitter voltage: 400V Polarisation: bipolar Kind of package: tube |
на замовлення 980 шт: термін постачання 14-30 дні (днів) |
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PHE13009/DG,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm Mounting: THT Type of transistor: NPN Case: TO220AB Heatsink thickness: max. 1.3mm Current gain: 8...40 Collector current: 12A Power dissipation: 80W Collector-emitter voltage: 400V Polarisation: bipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MAC97A6,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MAC97A6,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 1334 шт: термін постачання 14-30 дні (днів) |
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BTA204-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 50mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 546 шт: термін постачання 14-30 дні (днів) |
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BT151-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 2802 шт: термін постачання 14-30 дні (днів) |
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BT151-500RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12.5A Load current: 8A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 2621 шт: термін постачання 14-30 дні (днів) |
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BTA41-800BQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 40A Case: SOT1292; TO3P Gate current: 50/70mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 0.4kA Technology: 4Q |
на замовлення 788 шт: термін постачання 14-30 дні (днів) |
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BT137-600,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 867 шт: термін постачання 14-30 дні (днів) |
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| BT137-600/L01,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BT137-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 332 шт: термін постачання 14-30 дні (днів) |
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BT137-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 495 шт: термін постачання 14-30 дні (днів) |
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| BT137-600E/DG | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BT137-600E/L01,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BT137-600G,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 937 шт: термін постачання 14-30 дні (днів) |
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| BT137-600G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 500V Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTA416Y-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 160A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 750 шт: термін постачання 14-30 дні (днів) |
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BTA41-600BQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 40A Case: SOT1292; TO3P Gate current: 50/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 0.4kA Features of semiconductor devices: sensitive gate |
на замовлення 1270 шт: термін постачання 14-30 дні (днів) |
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BTA410Y-600CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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BTA410Y-600ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA410Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Max. forward impulse current: 100A Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA410Y-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Max. forward impulse current: 100A Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA412Y-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 807 шт: термін постачання 14-30 дні (днів) |
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BTA412Y-600C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 970 шт: термін постачання 14-30 дні (днів) |
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BTA412Y-600ETQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA412Y-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Technology: 3Q; Hi-Com |
на замовлення 564 шт: термін постачання 14-30 дні (днів) |
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BTA412Y-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 140A Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BT139X-600,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 865 шт: термін постачання 14-30 дні (днів) |
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Z0107MA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
на замовлення 3106 шт: термін постачання 14-30 дні (днів) |
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| Z0107MA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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Z0107MN,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 8.5A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape Technology: 4Q |
на замовлення 1321 шт: термін постачання 14-30 дні (днів) |
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Z0107MN0,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape Technology: 4Q |
на замовлення 3051 шт: термін постачання 14-30 дні (днів) |
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| Z0107NA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0107NA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0107NA0QP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0107NN,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
Z0107NN0,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3608 шт: термін постачання 14-30 дні (днів) |
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BT137-800,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 483 шт: термін постачання 14-30 дні (днів) |
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BT137-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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|
BT137B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 10/25mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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BT137B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 25/70mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
на замовлення 541 шт: термін постачання 14-30 дні (днів) |
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BT137B-800,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT137B-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 787 шт: термін постачання 14-30 дні (днів) |
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|
BT137B-800G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 742 шт: термін постачання 14-30 дні (днів) |
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|
BT137S-600,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1224 шт: термін постачання 14-30 дні (днів) |
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|
BT137S-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 9206 шт: термін постачання 14-30 дні (днів) |
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|
BT137S-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BT137S-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1161 шт: термін постачання 14-30 дні (днів) |
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| WNSC2D04650DJ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D04650DJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-252 (DPAK)
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 6.5nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 4A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC2D04650DJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 6.5 nC, TO-252 (DPAK)
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 6.5nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 4A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 801 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 115.76 грн |
| 12+ | 73.58 грн |
| 100+ | 48.73 грн |
| 500+ | 34.73 грн |
| WNSC6D16650CW6Q |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC6D16650CW6Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-247
tariffCode: 85411000
Bauform - Diode: TO-247
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC6D16650CW6Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-247
tariffCode: 85411000
Bauform - Diode: TO-247
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 575 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 184.56 грн |
| 10+ | 163.51 грн |
| 100+ | 141.66 грн |
| 500+ | 112.00 грн |
| ACT108W-600E,135 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - ACT108W-600E,135 - Triac, Schalter, 600 V, 800 mA, SOT-223, 1 V, 8.8 A, 25 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 25mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 8.8A
Spitzen-Durchlassspannung: 1.3V
isCanonical: N
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 800mA
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (23-Jan-2024)
Description: WEEN SEMICONDUCTORS - ACT108W-600E,135 - Triac, Schalter, 600 V, 800 mA, SOT-223, 1 V, 8.8 A, 25 mA
tariffCode: 85413000
Bauform - Triac: SOT-223
rohsCompliant: YES
Haltestrom, max.: 25mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 8.8A
Spitzen-Durchlassspannung: 1.3V
isCanonical: N
MSL: -
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 800mA
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: No SVHC (23-Jan-2024)
на замовлення 37255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 30.11 грн |
| 250+ | 20.97 грн |
| 1000+ | 11.73 грн |
| 2000+ | 10.13 грн |
| MUR860J |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - MUR860J - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 8 A, Einfach, 1.25 V, 93 ns, 200 A
tariffCode: 85411000
Bauform - Diode: DO-214AB (SMC)
Durchlassstoßstrom: 200A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: TBA
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: N
Durchlassspannung, max.: 1.25V
Sperrverzögerungszeit: 93ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 8A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - MUR860J - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 8 A, Einfach, 1.25 V, 93 ns, 200 A
tariffCode: 85411000
Bauform - Diode: DO-214AB (SMC)
Durchlassstoßstrom: 200A
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: TBA
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: N
Durchlassspannung, max.: 1.25V
Sperrverzögerungszeit: 93ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 8A
euEccn: NLR
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.36 грн |
| 9000+ | 12.95 грн |
| WNSC6D16650B6J |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 315.70 грн |
| 10+ | 246.89 грн |
| 100+ | 199.13 грн |
| WNSC6D16650B6J |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: N
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC6D16650B6J - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 36 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 36nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: N
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 190.23 грн |
| BT1308W-600D,115 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT1308W-600D,115 - Triac, 600 V, 800 mA, SC-73, 1.5 V, 9 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SC-73
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 9A
Spitzen-Durchlassspannung: 1.6V
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 800mA
euEccn: NLR
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BT1308W-600D,115 - Triac, 600 V, 800 mA, SC-73, 1.5 V, 9 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SC-73
rohsCompliant: YES
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 9A
Spitzen-Durchlassspannung: 1.6V
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 800mA
euEccn: NLR
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 39.99 грн |
| 31+ | 26.55 грн |
| 100+ | 16.51 грн |
| 500+ | 12.55 грн |
| 1000+ | 9.16 грн |
| BTA16-600BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
на замовлення 509 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 89.04 грн |
| 10+ | 73.24 грн |
| 50+ | 62.89 грн |
| 100+ | 58.30 грн |
| 500+ | 47.10 грн |
| BTA16-800BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 160A
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 160A
на замовлення 690 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 88.14 грн |
| 10+ | 58.13 грн |
| 100+ | 45.18 грн |
| 500+ | 37.25 грн |
| BTA408X-1000C0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 90A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 90A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 996 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.66 грн |
| 12+ | 36.75 грн |
| 25+ | 32.32 грн |
| 100+ | 29.31 грн |
| BT152-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 2533 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.42 грн |
| 10+ | 74.25 грн |
| 50+ | 58.88 грн |
| 100+ | 53.53 грн |
| 250+ | 47.44 грн |
| 500+ | 43.26 грн |
| 1000+ | 40.17 грн |
| BT169D,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Gate current: 50mA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.4kV
Type of thyristor: thyristor
Quantity in set/package: 1000pcs.
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Gate current: 50mA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 8A
Max. off-state voltage: 0.4kV
Type of thyristor: thyristor
Quantity in set/package: 1000pcs.
Turn-on time: 2µs
на замовлення 1030 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.08 грн |
| 23+ | 18.54 грн |
| 25+ | 17.12 грн |
| 50+ | 14.28 грн |
| 100+ | 13.20 грн |
| 500+ | 10.69 грн |
| 1000+ | 9.60 грн |
| PHE13009,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Current gain: 8...40
Collector current: 12A
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Current gain: 8...40
Collector current: 12A
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
на замовлення 980 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.46 грн |
| 10+ | 48.94 грн |
| 50+ | 39.92 грн |
| 100+ | 35.24 грн |
| 250+ | 29.57 грн |
| 500+ | 27.14 грн |
| PHE13009/DG,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Heatsink thickness: max. 1.3mm
Current gain: 8...40
Collector current: 12A
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Heatsink thickness: max. 1.3mm
Current gain: 8...40
Collector current: 12A
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MAC97A6,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MAC97A6,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 1334 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.78 грн |
| 28+ | 15.37 грн |
| 32+ | 13.20 грн |
| 100+ | 10.27 грн |
| 500+ | 7.85 грн |
| 1000+ | 7.10 грн |
| BTA204-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 546 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.08 грн |
| 20+ | 21.88 грн |
| 22+ | 19.71 грн |
| 30+ | 17.46 грн |
| BT151-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 2802 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.46 грн |
| 15+ | 28.48 грн |
| 25+ | 24.30 грн |
| 50+ | 21.88 грн |
| 100+ | 20.04 грн |
| 200+ | 19.54 грн |
| BT151-500RT,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12.5A
Load current: 8A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12.5A
Load current: 8A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 2621 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.37 грн |
| 14+ | 30.57 грн |
| 25+ | 24.55 грн |
| 100+ | 22.05 грн |
| BTA41-800BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 0.4kA
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 0.4kA
Technology: 4Q
на замовлення 788 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.42 грн |
| 3+ | 243.04 грн |
| 10+ | 207.12 грн |
| 30+ | 170.38 грн |
| 450+ | 145.32 грн |
| BT137-600,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 867 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.55 грн |
| 11+ | 41.01 грн |
| 25+ | 35.41 грн |
| 50+ | 31.82 грн |
| 100+ | 28.65 грн |
| 500+ | 22.80 грн |
| BT137-600/L01,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT137-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 332 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.55 грн |
| 10+ | 45.85 грн |
| 25+ | 38.00 грн |
| 50+ | 33.16 грн |
| 100+ | 29.15 грн |
| 250+ | 25.06 грн |
| BT137-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.55 грн |
| 11+ | 41.17 грн |
| 25+ | 35.49 грн |
| 50+ | 31.90 грн |
| 100+ | 28.65 грн |
| BT137-600E/DG |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT137-600E/L01,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT137-600G,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 937 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.86 грн |
| 10+ | 43.43 грн |
| 100+ | 30.65 грн |
| 500+ | 24.30 грн |
| BT137-600G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 500V
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 500V
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA416Y-600C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.44 грн |
| 10+ | 55.96 грн |
| 50+ | 49.19 грн |
| 100+ | 47.10 грн |
| 500+ | 41.59 грн |
| BTA41-600BQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 0.4kA
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 0.4kA
Features of semiconductor devices: sensitive gate
на замовлення 1270 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.22 грн |
| 10+ | 207.96 грн |
| 30+ | 162.02 грн |
| 60+ | 136.13 грн |
| 90+ | 127.78 грн |
| BTA410Y-600CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 188 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 14+ | 31.90 грн |
| 25+ | 28.56 грн |
| 100+ | 26.64 грн |
| BTA410Y-600ET,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA410Y-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA410Y-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA412Y-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 807 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.07 грн |
| 10+ | 44.26 грн |
| 25+ | 39.09 грн |
| 100+ | 37.92 грн |
| BTA412Y-600C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 970 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.36 грн |
| 9+ | 49.28 грн |
| 10+ | 43.60 грн |
| 30+ | 39.17 грн |
| 100+ | 36.50 грн |
| BTA412Y-600ETQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA412Y-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
на замовлення 564 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.23 грн |
| 10+ | 55.96 грн |
| 50+ | 45.68 грн |
| 100+ | 41.84 грн |
| 250+ | 37.17 грн |
| 500+ | 34.49 грн |
| BTA412Y-800C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BT139X-600,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 865 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.25 грн |
| 10+ | 57.38 грн |
| 50+ | 45.77 грн |
| 100+ | 41.51 грн |
| 500+ | 32.99 грн |
| Z0107MA,116 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
на замовлення 3106 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 27+ | 15.53 грн |
| 46+ | 9.27 грн |
| 100+ | 8.35 грн |
| 500+ | 7.35 грн |
| 2000+ | 6.93 грн |
| Z0107MA,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0107MN,135 | ![]() |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
на замовлення 1321 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.37 грн |
| 17+ | 26.06 грн |
| 50+ | 18.21 грн |
| 100+ | 15.53 грн |
| 500+ | 11.11 грн |
| 1000+ | 9.77 грн |
| Z0107MN0,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
на замовлення 3051 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.57 грн |
| 18+ | 24.30 грн |
| 100+ | 13.86 грн |
| 500+ | 9.86 грн |
| 1000+ | 8.77 грн |
| 2000+ | 7.93 грн |
| Z0107NA,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0107NA0,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0107NA0QP |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0107NN,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0107NN0,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3608 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.78 грн |
| 17+ | 24.89 грн |
| 19+ | 22.97 грн |
| 100+ | 15.20 грн |
| 500+ | 11.19 грн |
| 1000+ | 9.94 грн |
| 2000+ | 8.94 грн |
| BT137-800,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 483 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.45 грн |
| 11+ | 41.51 грн |
| 25+ | 36.00 грн |
| 50+ | 32.49 грн |
| 100+ | 29.31 грн |
| BT137-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 671 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.45 грн |
| 11+ | 40.92 грн |
| 25+ | 35.58 грн |
| 50+ | 32.32 грн |
| 100+ | 29.57 грн |
| 500+ | 24.55 грн |
| BT137B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
на замовлення 17 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.26 грн |
| 13+ | 33.74 грн |
| BT137B-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
на замовлення 541 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.37 грн |
| 13+ | 33.66 грн |
| 15+ | 28.23 грн |
| 30+ | 25.39 грн |
| 100+ | 22.47 грн |
| BT137B-800,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BT137B-800F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 787 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.75 грн |
| 13+ | 32.15 грн |
| 30+ | 29.31 грн |
| 100+ | 26.31 грн |
| 250+ | 24.05 грн |
| 500+ | 23.89 грн |
| BT137B-800G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 742 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.46 грн |
| 11+ | 38.59 грн |
| 25+ | 32.40 грн |
| 100+ | 29.06 грн |
| BT137S-600,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1224 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.35 грн |
| 13+ | 33.32 грн |
| 100+ | 27.89 грн |
| 250+ | 25.81 грн |
| 500+ | 24.30 грн |
| 1000+ | 22.72 грн |
| BT137S-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 9206 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.45 грн |
| 8+ | 55.12 грн |
| 10+ | 47.94 грн |
| 50+ | 34.16 грн |
| 100+ | 29.73 грн |
| 500+ | 22.63 грн |
| 1000+ | 20.55 грн |
| 2500+ | 19.54 грн |
| BT137S-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BT137S-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.43 грн |
| 25+ | 23.22 грн |
| 100+ | 20.88 грн |
| 500+ | 18.46 грн |



















