Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (3031) > Сторінка 29 з 51
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MF200A12F2N | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common anode; 1.2kV; If: 200A; F2N; screw Mechanical mounting: screw Reverse recovery time: 57ns Max. forward voltage: 1.9V Load current: 200A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.8kA Case: F2N Semiconductor structure: common anode; double Type of semiconductor module: diode Electrical mounting: screw Technology: FRED |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF200A12F2N | Yangjie Technology | Description: Diodes - Bridge Rectifiers F2N 2 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF200A12F5 | Yangjie Technology | Description: Diodes - Bridge Rectifiers F5 20 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MF200A12F5 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common anode; 1.2kV; If: 200A; F5; Ufmax: 1.9V Mechanical mounting: screw Reverse recovery time: 57ns Max. forward voltage: 1.9V Load current: 200A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.8kA Case: F5 Semiconductor structure: common anode; double Type of semiconductor module: diode Electrical mounting: screw Technology: FRED |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200C06F2 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double series; 600V; If: 200A; F2; Ufmax: 1.6V; screw Reverse recovery time: 50ns Max. forward voltage: 1.6V Load current: 200A Max. off-state voltage: 0.6kV Max. forward impulse current: 2kA Semiconductor structure: double series Type of semiconductor module: diode Case: F2 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200C12F2 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 200A; F2; Ufmax: 1.8V; screw Reverse recovery time: 57ns Max. forward voltage: 1.8V Load current: 200A Max. off-state voltage: 1.2kV Max. forward impulse current: 2kA Semiconductor structure: double series Type of semiconductor module: diode Case: F2 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200C12F2N | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 200A; F2N; Ufmax: 1.9V; FRED Reverse recovery time: 57ns Max. forward voltage: 1.9V Load current: 200A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.8kA Semiconductor structure: double series Type of semiconductor module: diode Case: F2N Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200C12F5 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 200A; F5; Ufmax: 1.9V; screw Reverse recovery time: 57ns Max. forward voltage: 1.9V Load current: 200A Max. off-state voltage: 1.2kV Max. forward impulse current: 1.8kA Semiconductor structure: double series Type of semiconductor module: diode Case: F5 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF200DU04FJ | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double independent; 400V; If: 100Ax2; FJ; Ifsm: 1.5kA Reverse recovery time: 38ns Max. forward voltage: 1.35V Load current: 100A x2 Max. off-state voltage: 0.4kV Max. forward impulse current: 1.5kA Semiconductor structure: double independent Type of semiconductor module: diode Case: FJ Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MF200DU04FJ | Yangjie Technology |
Description: Diodes - Bridge Rectifiers FJ 2X Current - Reverse Leakage @ Vr: 500 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SOT-227 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 95 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4 Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MF200DU06FJ | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double independent; 600V; If: 100Ax2; FJ; Ufmax: 1.3V Max. off-state voltage: 0.6kV Load current: 100A x2 Semiconductor structure: double independent Case: FJ Reverse recovery time: 50ns Electrical mounting: screw Type of semiconductor module: diode Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.3V Max. forward impulse current: 1.3kA |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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MF200DU12FJ | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double independent; 1.2kV; If: 100Ax2; FJ; screw Max. off-state voltage: 1.2kV Load current: 100A x2 Semiconductor structure: double independent Case: FJ Reverse recovery time: 50ns Electrical mounting: screw Type of semiconductor module: diode Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.6V Max. forward impulse current: 1.45kA |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| MF200K04F3 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw Reverse recovery time: 38ns Max. forward voltage: 1.25V Load current: 100A x2 Max. off-state voltage: 0.4kV Max. forward impulse current: 1.5kA Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: F3 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200K04F3LG | YANGJIE TECHNOLOGY |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw Reverse recovery time: 50ns Max. forward voltage: 1.15V Load current: 100A x2 Max. off-state voltage: 0.4kV Max. forward impulse current: 3kA Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: F3 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MF200K04F4 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common cathode; 400V; If: 100Ax2; F4; screw Reverse recovery time: 38ns Max. forward voltage: 1.25V Load current: 100A x2 Max. off-state voltage: 0.4kV Max. forward impulse current: 1.5kA Semiconductor structure: common cathode; double Type of semiconductor module: diode Case: F4 Technology: FRED Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MF200K04F4 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F4 2X Current - Reverse Leakage @ Vr: 500 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F4 Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 95 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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MF200K04F4N | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F4N 2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: F4N Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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MF200K06F2 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common cathode; 600V; If: 200A; F2; Ifsm: 2kA Max. off-state voltage: 0.6kV Load current: 200A Semiconductor structure: common cathode; double Case: F2 Reverse recovery time: 50ns Electrical mounting: screw Type of semiconductor module: diode Mechanical mounting: screw Technology: FRED Max. forward voltage: 1.6V Max. forward impulse current: 2kA |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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MF200K06F2 | Yangjie Technology | Description: Diodes - Bridge Rectifiers F2 20 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF200K06F2N | Yangjie Technology | Description: Diodes - Bridge Rectifiers F2N 2 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF200K06F4 | Yangjie Technology | Description: Diodes - Bridge Rectifiers F4 2X |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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MF300A06F2 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; double,common anode; 600V; If: 300A; F2; Ufmax: 1.65V Electrical mounting: screw Type of semiconductor module: diode Case: F2 Mechanical mounting: screw Technology: FRED Reverse recovery time: 55ns Max. forward voltage: 1.65V Max. forward impulse current: 3kA Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: common anode; double |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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MF300A06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Supplier Device Package: F2 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300A06F2N | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2N 3 Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2N Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300C06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2 Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Series Connection Packaging: Bulk Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300C12F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Current - Reverse Leakage @ Vr: 1 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2 Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 135 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300K04F3 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Current - Reverse Leakage @ Vr: 500 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F3 Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: F3 Module Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K04F3LG | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Current - Reverse Leakage @ Vr: 500 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F3 Current - Average Rectified (Io) (per Diode): 150A Diode Configuration: 1 Pair Common Cathode |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300K06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Package / Case: Module Packaging: Bulk Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2 Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300K06F2N | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2N 3 Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2N Current - Average Rectified (Io) (per Diode): 300A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300K06F3 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F3 2X Packaging: Bulk Package / Case: F3 Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: F3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Current - Reverse Leakage @ Vr: 1 mA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MF300U05F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Current - Reverse Leakage @ Vr: 500 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Voltage - DC Reverse (Vr) (Max): 500 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F6 Current - Average Rectified (Io): 300A Technology: Standard Reverse Recovery Time (trr): 155 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U06F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Current - Reverse Leakage @ Vr: 500 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2 Current - Average Rectified (Io): 300A Technology: Standard Reverse Recovery Time (trr): 145 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: F2 Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MF300U06F2 | YANGJIE TECHNOLOGY |
Category: Diode modulesDescription: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw Electrical mounting: screw Type of semiconductor module: diode Case: F2 Mechanical mounting: screw Technology: FRED Reverse recovery time: 55ns Max. forward voltage: 1.65V Max. forward impulse current: 1.5kA Max. off-state voltage: 0.6kV Load current: 300A Semiconductor structure: single diode |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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MF300U07F6 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F6 30 Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Voltage - DC Reverse (Vr) (Max): 700 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F6 Current - Average Rectified (Io): 300A Technology: Standard Reverse Recovery Time (trr): 180 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Current - Reverse Leakage @ Vr: 500 µA @ 700 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MF300U12F2 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers F2 30 Current - Reverse Leakage @ Vr: 5 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: F2 Current - Average Rectified (Io): 300A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: F2 Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG100HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 NTC Thermistor: No Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 675 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Part Status: Active IGBT Type: NPT Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 785 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Part Status: Active IGBT Type: Trench NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG100P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 442 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Part Status: Active NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| MG100UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ Case: GJ-UZ Mechanical mounting: screw Type of semiconductor module: IGBT Application: Inverter; motors Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG100UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MG10P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 92 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 10 A Part Status: Active NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG10P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Input Capacitance (Cies) @ Vce: 1 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 105 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 10 A Part Status: Active NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG150HF12LEC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1136 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 968 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG150HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Input Capacitance (Cies) @ Vce: 11 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 833 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Part Status: Active IGBT Type: Trench NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Part Status: Active NTC Thermistor: Yes Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG150TF12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG15P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG15P12P2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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MG15P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 155 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 15 A Part Status: Active NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Current - Collector (Ic) (Max): 300 A Part Status: Active Supplier Device Package: C2 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1150 W Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG200HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A Part Status: Active IGBT Type: Trench NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Part Status: Active NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Operating Temperature: 175°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 155 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Part Status: Active |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 175 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Part Status: Active NTC Thermistor: Yes |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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| MG25P12P3 | YANGJIE TECHNOLOGY |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Type of semiconductor module: IGBT Application: Inverter; motors Case: P3 Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Max. off-state voltage: 1.2kV Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MG300HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG300HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1700 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| MF200A12F2N |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 200A; F2N; screw
Mechanical mounting: screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Case: F2N
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 200A; F2N; screw
Mechanical mounting: screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Case: F2N
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
Technology: FRED
товару немає в наявності
В кошику
од. на суму грн.
| MF200A12F2N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2N 2
Description: Diodes - Bridge Rectifiers F2N 2
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 3181.41 грн |
| 40+ | 2893.37 грн |
| 80+ | 2723.16 грн |
| 160+ | 2395.84 грн |
| 320+ | 2156.27 грн |
| 800+ | 1996.54 грн |
| MF200A12F5 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F5 20
Description: Diodes - Bridge Rectifiers F5 20
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 2559.47 грн |
| 50+ | 2327.76 грн |
| 100+ | 2190.86 грн |
| 200+ | 1927.51 грн |
| 400+ | 1734.76 грн |
| 1000+ | 1606.29 грн |
| MF200A12F5 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 200A; F5; Ufmax: 1.9V
Mechanical mounting: screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Case: F5
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
Technology: FRED
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 200A; F5; Ufmax: 1.9V
Mechanical mounting: screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Case: F5
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
Technology: FRED
товару немає в наявності
В кошику
од. на суму грн.
| MF200C06F2 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 600V; If: 200A; F2; Ufmax: 1.6V; screw
Reverse recovery time: 50ns
Max. forward voltage: 1.6V
Load current: 200A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 600V; If: 200A; F2; Ufmax: 1.6V; screw
Reverse recovery time: 50ns
Max. forward voltage: 1.6V
Load current: 200A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 2kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200C12F2 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F2; Ufmax: 1.8V; screw
Reverse recovery time: 57ns
Max. forward voltage: 1.8V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F2; Ufmax: 1.8V; screw
Reverse recovery time: 57ns
Max. forward voltage: 1.8V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 2kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200C12F2N |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F2N; Ufmax: 1.9V; FRED
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2N
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F2N; Ufmax: 1.9V; FRED
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F2N
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200C12F5 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F5; Ufmax: 1.9V; screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F5
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 200A; F5; Ufmax: 1.9V; screw
Reverse recovery time: 57ns
Max. forward voltage: 1.9V
Load current: 200A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.8kA
Semiconductor structure: double series
Type of semiconductor module: diode
Case: F5
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200DU04FJ |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; FJ; Ifsm: 1.5kA
Reverse recovery time: 38ns
Max. forward voltage: 1.35V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: FJ
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; FJ; Ifsm: 1.5kA
Reverse recovery time: 38ns
Max. forward voltage: 1.35V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: FJ
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200DU04FJ |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers FJ 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
Description: Diodes - Bridge Rectifiers FJ 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Packaging: Bulk
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 1352.96 грн |
| 125+ | 1230.45 грн |
| 250+ | 1158.07 грн |
| 500+ | 1018.87 грн |
| 1000+ | 917.01 грн |
| 2500+ | 849.08 грн |
| MF200DU06FJ |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 100Ax2; FJ; Ufmax: 1.3V
Max. off-state voltage: 0.6kV
Load current: 100A x2
Semiconductor structure: double independent
Case: FJ
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.3V
Max. forward impulse current: 1.3kA
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 100Ax2; FJ; Ufmax: 1.3V
Max. off-state voltage: 0.6kV
Load current: 100A x2
Semiconductor structure: double independent
Case: FJ
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.3V
Max. forward impulse current: 1.3kA
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1326.74 грн |
| 3+ | 1109.53 грн |
| MF200DU12FJ |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; FJ; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Semiconductor structure: double independent
Case: FJ
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.6V
Max. forward impulse current: 1.45kA
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; FJ; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Semiconductor structure: double independent
Case: FJ
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.6V
Max. forward impulse current: 1.45kA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1994.18 грн |
| 3+ | 1671.43 грн |
| MF200K04F3 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw
Reverse recovery time: 38ns
Max. forward voltage: 1.25V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F3
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw
Reverse recovery time: 38ns
Max. forward voltage: 1.25V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F3
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200K04F3LG |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw
Reverse recovery time: 50ns
Max. forward voltage: 1.15V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 3kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F3
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F3; screw
Reverse recovery time: 50ns
Max. forward voltage: 1.15V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 3kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F3
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200K04F4 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F4; screw
Reverse recovery time: 38ns
Max. forward voltage: 1.25V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F4
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 100Ax2; F4; screw
Reverse recovery time: 38ns
Max. forward voltage: 1.25V
Load current: 100A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.5kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Case: F4
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MF200K04F4 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F4 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F4
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F4 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F4
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 1132.68 грн |
| 60+ | 1030.13 грн |
| 120+ | 969.52 грн |
| 240+ | 852.98 грн |
| 480+ | 767.69 грн |
| 1200+ | 710.82 грн |
| MF200K04F4N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F4N 2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: F4N
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Description: Diodes - Bridge Rectifiers F4N 2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: F4N
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 975.39 грн |
| 60+ | 887.10 грн |
| 120+ | 834.87 грн |
| 240+ | 734.54 грн |
| 480+ | 661.09 грн |
| 1200+ | 612.14 грн |
| MF200K06F2 |
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Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200A; F2; Ifsm: 2kA
Max. off-state voltage: 0.6kV
Load current: 200A
Semiconductor structure: common cathode; double
Case: F2
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.6V
Max. forward impulse current: 2kA
Category: Diode modules
Description: Module: diode; double,common cathode; 600V; If: 200A; F2; Ifsm: 2kA
Max. off-state voltage: 0.6kV
Load current: 200A
Semiconductor structure: common cathode; double
Case: F2
Reverse recovery time: 50ns
Electrical mounting: screw
Type of semiconductor module: diode
Mechanical mounting: screw
Technology: FRED
Max. forward voltage: 1.6V
Max. forward impulse current: 2kA
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1994.18 грн |
| 3+ | 1664.72 грн |
| MF200K06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 20
Description: Diodes - Bridge Rectifiers F2 20
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2214.37 грн |
| 40+ | 2013.90 грн |
| 80+ | 1895.42 грн |
| 160+ | 1667.61 грн |
| 320+ | 1500.88 грн |
| 800+ | 1389.71 грн |
| MF200K06F2N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2N 2
Description: Diodes - Bridge Rectifiers F2N 2
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2259.84 грн |
| 40+ | 2055.22 грн |
| 80+ | 1934.27 грн |
| 160+ | 1701.80 грн |
| 320+ | 1531.64 грн |
| 800+ | 1418.20 грн |
| MF200K06F4 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F4 2X
Description: Diodes - Bridge Rectifiers F4 2X
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 1300.61 грн |
| 60+ | 1182.84 грн |
| 120+ | 1113.24 грн |
| 240+ | 979.42 грн |
| 480+ | 881.52 грн |
| 1200+ | 816.21 грн |
| MF300A06F2 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; double,common anode; 600V; If: 300A; F2; Ufmax: 1.65V
Electrical mounting: screw
Type of semiconductor module: diode
Case: F2
Mechanical mounting: screw
Technology: FRED
Reverse recovery time: 55ns
Max. forward voltage: 1.65V
Max. forward impulse current: 3kA
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common anode; double
Category: Diode modules
Description: Module: diode; double,common anode; 600V; If: 300A; F2; Ufmax: 1.65V
Electrical mounting: screw
Type of semiconductor module: diode
Case: F2
Mechanical mounting: screw
Technology: FRED
Reverse recovery time: 55ns
Max. forward voltage: 1.65V
Max. forward impulse current: 3kA
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: common anode; double
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2493.63 грн |
| 3+ | 2084.04 грн |
| MF300A06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: F2
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Supplier Device Package: F2
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2799.98 грн |
| 40+ | 2546.49 грн |
| 80+ | 2396.74 грн |
| 160+ | 2108.65 грн |
| 320+ | 1897.77 грн |
| 800+ | 1757.24 грн |
| MF300A06F2N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2N 3
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2N
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F2N 3
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2N
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2799.98 грн |
| 40+ | 2546.49 грн |
| 80+ | 2396.74 грн |
| 160+ | 2108.65 грн |
| 320+ | 1897.77 грн |
| 800+ | 1757.24 грн |
| MF300C06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2799.98 грн |
| 40+ | 2546.49 грн |
| 80+ | 2396.74 грн |
| 160+ | 2108.65 грн |
| 320+ | 1897.77 грн |
| 800+ | 1757.24 грн |
| MF300C12F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 135 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 135 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 4876.40 грн |
| 40+ | 4434.89 грн |
| 80+ | 4174.03 грн |
| 160+ | 3672.37 грн |
| 320+ | 3305.10 грн |
| 800+ | 3060.30 грн |
| MF300K04F3 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F3
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F3 Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F3 2X
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F3
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F3 Module
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1290.00 грн |
| 50+ | 1173.24 грн |
| 100+ | 1104.17 грн |
| 200+ | 971.48 грн |
| 400+ | 874.37 грн |
| 1000+ | 809.56 грн |
| MF300K04F3LG |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F3
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Description: Diodes - Bridge Rectifiers F3 2X
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F3
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1478.82 грн |
| 50+ | 1344.87 грн |
| 100+ | 1265.77 грн |
| 200+ | 1113.65 грн |
| 400+ | 1002.30 грн |
| 1000+ | 928.06 грн |
| MF300K06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Description: Diodes - Bridge Rectifiers F2 30
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2799.98 грн |
| 40+ | 2546.49 грн |
| 80+ | 2396.74 грн |
| 160+ | 2108.65 грн |
| 320+ | 1897.77 грн |
| 800+ | 1757.24 грн |
| MF300K06F2N |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2N 3
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2N
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F2N 3
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2N
Current - Average Rectified (Io) (per Diode): 300A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2723.85 грн |
| 40+ | 2477.28 грн |
| 80+ | 2331.53 грн |
| 160+ | 2051.27 грн |
| 320+ | 1846.14 грн |
| 800+ | 1709.43 грн |
| MF300K06F3 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
Description: Diodes - Bridge Rectifiers F3 2X
Packaging: Bulk
Package / Case: F3 Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: F3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1604.63 грн |
| 50+ | 1459.38 грн |
| 100+ | 1373.56 грн |
| 200+ | 1208.42 грн |
| 400+ | 1087.58 грн |
| 1000+ | 1007.04 грн |
| MF300U05F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F6
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 155 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F6 30
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F6
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 155 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 2839.89 грн |
| 30+ | 2582.72 грн |
| 60+ | 2430.78 грн |
| 120+ | 2138.61 грн |
| 240+ | 1924.76 грн |
| 600+ | 1782.17 грн |
| MF300U06F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F2 Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 145 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F2 Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 2044.87 грн |
| 40+ | 1859.79 грн |
| 80+ | 1750.35 грн |
| 160+ | 1416.67 грн |
| 320+ | 1133.34 грн |
| 800+ | 991.67 грн |
| MF300U06F2 |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Electrical mounting: screw
Type of semiconductor module: diode
Case: F2
Mechanical mounting: screw
Technology: FRED
Reverse recovery time: 55ns
Max. forward voltage: 1.65V
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: single diode
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 300A; F2; Ufmax: 1.65V; screw
Electrical mounting: screw
Type of semiconductor module: diode
Case: F2
Mechanical mounting: screw
Technology: FRED
Reverse recovery time: 55ns
Max. forward voltage: 1.65V
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.6kV
Load current: 300A
Semiconductor structure: single diode
на замовлення 9 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2446.66 грн |
| 3+ | 2047.98 грн |
| MF300U07F6 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F6 30
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 700 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F6
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
Description: Diodes - Bridge Rectifiers F6 30
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 700 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F6
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 2295.53 грн |
| 30+ | 2087.66 грн |
| 60+ | 1964.85 грн |
| 120+ | 1728.69 грн |
| 240+ | 1555.79 грн |
| 600+ | 1440.54 грн |
| MF300U12F2 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F2 Module
Packaging: Bulk
Description: Diodes - Bridge Rectifiers F2 30
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: F2
Current - Average Rectified (Io): 300A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: F2 Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 3303.48 грн |
| 40+ | 3004.34 грн |
| 80+ | 2827.65 грн |
| 160+ | 2487.75 грн |
| 320+ | 2238.98 грн |
| 800+ | 2073.16 грн |
| MG100HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
NTC Thermistor: No
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 675 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules C1
NTC Thermistor: No
Input Capacitance (Cies) @ Vce: 6.7 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 675 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 3215.21 грн |
| 50+ | 2924.11 грн |
| 100+ | 2752.17 грн |
| 200+ | 2421.38 грн |
| 400+ | 2179.20 грн |
| 1000+ | 2017.77 грн |
| MG100HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 785 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules C1
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 785 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 3269.13 грн |
| 50+ | 2973.17 грн |
| 100+ | 2798.29 грн |
| 200+ | 2461.96 грн |
| 400+ | 2215.75 грн |
| 1000+ | 2051.62 грн |
| MG100P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 442 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules E2
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 442 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 9381.74 грн |
| 30+ | 8532.39 грн |
| 60+ | 8030.45 грн |
| 120+ | 7065.30 грн |
| 240+ | 6358.73 грн |
| 600+ | 5887.76 грн |
| MG100UZ12GJ |
![]() |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter; motors
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: Inverter; motors
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MG100UZ12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 2516.83 грн |
| 125+ | 2288.96 грн |
| 250+ | 2154.38 грн |
| 500+ | 1895.44 грн |
| 1000+ | 1705.89 грн |
| 2500+ | 1579.52 грн |
| MG10P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 92 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 92 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 3101.42 грн |
| 30+ | 2820.63 грн |
| 60+ | 2654.73 грн |
| 120+ | 2335.60 грн |
| 240+ | 2102.06 грн |
| 600+ | 1946.37 грн |
| MG10P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 105 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules P2
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 105 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 1922.78 грн |
| 180+ | 1748.68 грн |
| 360+ | 1645.81 грн |
| 720+ | 1447.98 грн |
| 1440+ | 1303.20 грн |
| 3600+ | 1206.65 грн |
| MG150HF12LEC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 150A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 5390.03 грн |
| 30+ | 4902.02 грн |
| 60+ | 4613.70 грн |
| 120+ | 4059.12 грн |
| 240+ | 3653.24 грн |
| 600+ | 3382.59 грн |
| MG150HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 4826.14 грн |
| 20+ | 4389.30 грн |
| 40+ | 4131.09 грн |
| 80+ | 3634.57 грн |
| 160+ | 3271.15 грн |
| 400+ | 3028.84 грн |
| MG150HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 968 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.8 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 4310.98 грн |
| 50+ | 3773.92 грн |
| 100+ | 3396.53 грн |
| 200+ | 2833.34 грн |
| 400+ | 2479.18 грн |
| 1000+ | 2125.01 грн |
| MG150HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules C2
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 4993.68 грн |
| 30+ | 4541.61 грн |
| 60+ | 4274.50 грн |
| 120+ | 3760.70 грн |
| 240+ | 3384.64 грн |
| 600+ | 3133.89 грн |
| MG150P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
NTC Thermistor: Yes
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
NTC Thermistor: Yes
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 12718.31 грн |
| 30+ | 11566.95 грн |
| 60+ | 10886.56 грн |
| 120+ | 9578.09 грн |
| 240+ | 8620.27 грн |
| 600+ | 7981.74 грн |
| MG150TF12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 10671.64 грн |
| 30+ | 9705.52 грн |
| 60+ | 9134.63 грн |
| 120+ | 8036.67 грн |
| 240+ | 7233.03 грн |
| 600+ | 6697.27 грн |
| MG15P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 3187.19 грн |
| 40+ | 2898.60 грн |
| 80+ | 2728.09 грн |
| 160+ | 2400.20 грн |
| 320+ | 2160.14 грн |
| 800+ | 2000.13 грн |
| MG15P12P2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 2472.15 грн |
| 180+ | 2248.35 грн |
| 360+ | 2116.04 грн |
| 720+ | 1861.72 грн |
| 1440+ | 1675.57 грн |
| 3600+ | 1551.47 грн |
| MG15P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 155 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules P3
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 155 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 2372.05 грн |
| 120+ | 2157.33 грн |
| 240+ | 2030.37 грн |
| 480+ | 1786.35 грн |
| 960+ | 1607.71 грн |
| 2400+ | 1488.64 грн |
| MG200HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: C2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: C2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 6040.47 грн |
| 20+ | 5493.70 грн |
| 40+ | 5170.50 грн |
| 80+ | 4549.08 грн |
| 160+ | 4094.18 грн |
| 400+ | 3790.87 грн |
| MG200HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules C2
Input Capacitance (Cies) @ Vce: 12.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 6494.95 грн |
| 30+ | 5906.94 грн |
| 60+ | 5559.52 грн |
| 120+ | 4891.27 грн |
| 240+ | 4402.17 грн |
| 600+ | 4076.05 грн |
| MG25P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 5056.58 грн |
| 40+ | 4598.83 грн |
| 80+ | 4328.31 грн |
| 160+ | 3808.09 грн |
| 320+ | 3427.28 грн |
| 800+ | 3173.42 грн |
| MG25P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 155 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
Description: Transistors - IGBTs - Modules E1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 155 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 3485.13 грн |
| 40+ | 3169.64 грн |
| 80+ | 2983.13 грн |
| 160+ | 2624.60 грн |
| 320+ | 2362.16 грн |
| 800+ | 2187.20 грн |
| MG25P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 175 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
Description: Transistors - IGBTs - Modules P3
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 175 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 2853.15 грн |
| 120+ | 2594.87 грн |
| 240+ | 2442.18 грн |
| 480+ | 2148.67 грн |
| 960+ | 1933.83 грн |
| 2400+ | 1790.53 грн |
| MG25P12P3 |
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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Type of semiconductor module: IGBT
Application: Inverter; motors
Case: P3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Type of semiconductor module: IGBT
Application: Inverter; motors
Case: P3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
товару немає в наявності
В кошику
од. на суму грн.
| MG300HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 7327.88 грн |
| 20+ | 6664.45 грн |
| 40+ | 6272.47 грн |
| 80+ | 5518.54 грн |
| 160+ | 4966.68 грн |
| 400+ | 4598.75 грн |
| MG300HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 6270.52 грн |
| 30+ | 5660.88 грн |
| 60+ | 5283.49 грн |
| 120+ | 4604.19 грн |
| 240+ | 4250.02 грн |
| 600+ | 3754.18 грн |

























