Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1715) > Сторінка 27 з 29
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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YBSM6008 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 800V 6A YBS3Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS3 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YBSM6010 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A YBS3Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS3 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YBSM6010 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A YBS3Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: YBS3 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YBSM6010-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A YBS3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YBSM6010-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 6A YBS3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJB200G06B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 200A TO-263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Supplier Device Package: TO-263 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJB200G06B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 200A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Supplier Device Package: TO-263 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD20N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD20N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD20N06A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD20N06A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD45G10A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 45A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD45G10A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 45A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD80G06A-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 80A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJD80G06A-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 80A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG15N15B-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 150V 15A PDFN5060-8L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG15N15B-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 150V 15A PDFN5060-8L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG30N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L-Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG30N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L-Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG30N06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG30N06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 30A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG50N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A PDFN5060-8L-Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG50N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A PDFN5060-8L-Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG50N03A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG50N03A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG53G06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 53A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG53G06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 53A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG60G10A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 60A PDFN5060-8L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG60G10A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 60A PDFN5060-8L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG95G06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 95A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJG95G06A-F1-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 95A PDFN5060-8L- |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJJ09N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6LPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJJ09N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6LPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| YJJ09N03A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| YJJ09N03A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 9A SOT-23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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YJL02N10A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL02N10A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL02N10A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL02N10A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL03G10A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 3A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL03G10A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 3A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL03N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3LPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL03N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3LPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V |
на замовлення 858 шт: термін постачання 21-31 дні (днів) |
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| YJL03N06A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| YJL03N06A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3L |
на замовлення 720 шт: термін постачання 21-31 дні (днів) |
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YJL03N06B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3LPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.55V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL03N06B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3LPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.55V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| YJL03N06B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| YJL03N06B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 3A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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YJL05N04A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 40V 5A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL05N04A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 40V 5A SOT-23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2101W | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 2A SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2101W | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 2A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2101W-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 2A SOT-323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2101W-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 2A SOT-323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2102W | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2102W | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2102W-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2102W-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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YJL2301C | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 3.4A SOT-23-3LPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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| YBSM6008 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: RECT BRIDGE 800V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| YBSM6010 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| YBSM6010 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| YBSM6010-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Description: RECT BRIDGE 1000V 6A YBS3
товару немає в наявності
В кошику
од. на суму грн.
| YBSM6010-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Description: RECT BRIDGE 1000V 6A YBS3
товару немає в наявності
В кошику
од. на суму грн.
| YJB200G06B |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| YJB200G06B |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| YJD20N06A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJD20N06A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJD20N06A-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Description: N-CH MOSFET 60V 20A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJD20N06A-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Description: N-CH MOSFET 60V 20A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJD45G10A-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
Description: N-CH MOSFET 100V 45A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJD45G10A-F1-0000HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
Description: N-CH MOSFET 100V 45A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJD80G06A-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
Description: N-CH MOSFET 60V 80A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJD80G06A-F1-0000 |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
Description: N-CH MOSFET 60V 80A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| YJG15N15B-F1-0100HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
Description: N-CH MOSFET 150V 15A PDFN5060-8L
товару немає в наявності
В кошику
од. на суму грн.
| YJG15N15B-F1-0100HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
Description: N-CH MOSFET 150V 15A PDFN5060-8L
товару немає в наявності
В кошику
од. на суму грн.
| YJG30N06A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJG30N06A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJG30N06A-F1-0100HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG30N06A-F1-0100HF |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG50N03A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| YJG50N03A |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| YJG50N03A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG50N03A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG53G06A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG53G06A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG60G10A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
Description: N-CH MOSFET 100V 60A PDFN5060-8L
товару немає в наявності
В кошику
од. на суму грн.
| YJG60G10A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
Description: N-CH MOSFET 100V 60A PDFN5060-8L
товару немає в наявності
В кошику
од. на суму грн.
| YJG95G06A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJG95G06A-F1-0100HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товару немає в наявності
В кошику
од. на суму грн.
| YJJ09N03A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| YJJ09N03A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| YJJ09N03A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Description: N-CH MOSFET 30V 9A SOT-23-6L
товару немає в наявності
В кошику
од. на суму грн.
| YJJ09N03A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Description: N-CH MOSFET 30V 9A SOT-23-6L
товару немає в наявності
В кошику
од. на суму грн.
| YJL02N10A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Description: N-CH MOSFET 100V 2A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL02N10A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Description: N-CH MOSFET 100V 2A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL02N10A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Description: N-CH MOSFET 100V 2A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL02N10A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
Description: N-CH MOSFET 100V 2A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL03G10A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
Description: N-CH MOSFET 100V 3A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL03G10A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
Description: N-CH MOSFET 100V 3A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06A |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.01 грн |
| 18+ | 17.11 грн |
| 100+ | 9.06 грн |
| 500+ | 5.60 грн |
| YJL03N06A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Description: N-CH MOSFET 60V 3A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Description: N-CH MOSFET 60V 3A SOT-23-3L
на замовлення 720 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.95 грн |
| 12+ | 26.88 грн |
| 100+ | 15.23 грн |
| 500+ | 9.47 грн |
| YJL03N06B |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06B |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06B-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Description: N-CH MOSFET 60V 3A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL03N06B-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Description: N-CH MOSFET 60V 3A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL05N04A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
Description: N-CH MOSFET 40V 5A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL05N04A-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
Description: N-CH MOSFET 40V 5A SOT-23-3L
товару немає в наявності
В кошику
од. на суму грн.
| YJL2101W |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL2101W |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL2101W-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Description: P-CH MOSFET 20V 2A SOT-323
товару немає в наявності
В кошику
од. на суму грн.
| YJL2101W-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Description: P-CH MOSFET 20V 2A SOT-323
товару немає в наявності
В кошику
од. на суму грн.
| YJL2102W |
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Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL2102W |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| YJL2102W-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Description: N-CH MOSFET 20V 3A SOT-323
товару немає в наявності
В кошику
од. на суму грн.
| YJL2102W-F2-0000HF |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Description: N-CH MOSFET 20V 3A SOT-323
товару немає в наявності
В кошику
од. на суму грн.
| YJL2301C |
![]() |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.01 грн |
| 18+ | 17.11 грн |
| 100+ | 9.06 грн |









