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SSL510-F1-0000 SSL510-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54%20THRU%20SSL510.pdf Description: DIODE SCHOTTKY 100V 5A DO214AB
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SSL54 SSL54 Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54%20THRU%20SSL510.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SSL54 SSL54 Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54%20THRU%20SSL510.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SSL54B SSL54B Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SSL54B SSL54B Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SSL54B-F1-0000HF SSL54B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
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SSL54B-F1-0000HF SSL54B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
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SSL54-F1-3000HF SSL54-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54%20THRU%20SSL510.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
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SSL54-F1-3000HF SSL54-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54%20THRU%20SSL510.pdf Description: DIODE SCHOTTKY 40V 5A DO214AB
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SSL56B SSL56B Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 60V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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SSL56B SSL56B Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 60V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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SSL56B-F1-0000HF SSL56B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 60V 5A DO214AA
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SSL56B-F1-0000HF SSL56B-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd SSL54B%20THRU%20SSL510B.pdf Description: DIODE SCHOTTKY 60V 5A DO214AA
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UG2DA UG2DA Yangzhou Yangjie Electronic Technology Co.,Ltd UG2AA%20THRU%20UG2JA.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UG2DA UG2DA Yangzhou Yangjie Electronic Technology Co.,Ltd UG2AA%20THRU%20UG2JA.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UG2DA-F1-3000HF UG2DA-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd UG2AA%20THRU%20UG2JA.pdf Description: DIODE GEN PURP 200V 2A DO214AC
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UG2DA-F1-3000HF UG2DA-F1-3000HF Yangzhou Yangjie Electronic Technology Co.,Ltd UG2AA%20THRU%20UG2JA.pdf Description: DIODE GEN PURP 200V 2A DO214AC
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YBS3010 YBS3010 Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005%20THRU%20YBS3010.pdf Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBS3010 YBS3010 Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005%20THRU%20YBS3010.pdf Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBS3010A YBS3010A Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005A%20THRU%20YBS3010A.pdf Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBS3010A YBS3010A Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005A%20THRU%20YBS3010A.pdf Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBS3010A-F1-0000HF YBS3010A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005A%20THRU%20YBS3010A.pdf Description: RECT BRIDGE 1000V 3A YBS2
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YBS3010A-F1-0000HF YBS3010A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005A%20THRU%20YBS3010A.pdf Description: RECT BRIDGE 1000V 3A YBS2
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YBS3010-F1-0000HF YBS3010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005%20THRU%20YBS3010.pdf Description: RECT BRIDGE 1000V 3A YBS2
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YBS3010-F1-0000HF YBS3010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBS30005%20THRU%20YBS3010.pdf Description: RECT BRIDGE 1000V 3A YBS2
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YBSM6008 YBSM6008 Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 800V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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YBSM6008 YBSM6008 Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 800V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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YBSM6010 YBSM6010 Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBSM6010 YBSM6010 Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBSM6010-F1-0000HF YBSM6010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
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YBSM6010-F1-0000HF YBSM6010-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YBSM60005%20THRU%20YBSM6010.pdf Description: RECT BRIDGE 1000V 6A YBS3
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YJB200G06B YJB200G06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJB200G06B.pdf Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
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YJB200G06B YJB200G06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJB200G06B.pdf Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
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YJD20N06A YJD20N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
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YJD20N06A YJD20N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
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YJD20N06A-F1-0000HF YJD20N06A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
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YJD20N06A-F1-0000HF YJD20N06A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
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YJD45G10A-F1-0000HF YJD45G10A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD45G10A.pdf Description: N-CH MOSFET 100V 45A TO-252
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YJD45G10A-F1-0000HF YJD45G10A-F1-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJD45G10A.pdf Description: N-CH MOSFET 100V 45A TO-252
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YJD80G06A-F1-0000 YJD80G06A-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd YJD80G06A.pdf Description: N-CH MOSFET 60V 80A TO-252
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YJD80G06A-F1-0000 YJD80G06A-F1-0000 Yangzhou Yangjie Electronic Technology Co.,Ltd YJD80G06A.pdf Description: N-CH MOSFET 60V 80A TO-252
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YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
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YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
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YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
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YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
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YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
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YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
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YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
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YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
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YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
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YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
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YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
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YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
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YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
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YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
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YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
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YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
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YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
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YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
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YJJ09N03A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
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SSL510-F1-0000 SSL54%20THRU%20SSL510.pdf
SSL510-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 100V 5A DO214AB
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SSL54 SSL54%20THRU%20SSL510.pdf
SSL54
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SSL54 SSL54%20THRU%20SSL510.pdf
SSL54
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SSL54B SSL54B%20THRU%20SSL510B.pdf
SSL54B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SSL54B SSL54B%20THRU%20SSL510B.pdf
SSL54B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SSL54B-F1-0000HF SSL54B%20THRU%20SSL510B.pdf
SSL54B-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AA
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SSL54B-F1-0000HF SSL54B%20THRU%20SSL510B.pdf
SSL54B-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AA
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В кошику  од. на суму  грн.
SSL54-F1-3000HF SSL54%20THRU%20SSL510.pdf
SSL54-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AB
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SSL54-F1-3000HF SSL54%20THRU%20SSL510.pdf
SSL54-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 40V 5A DO214AB
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SSL56B SSL54B%20THRU%20SSL510B.pdf
SSL56B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 60V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
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SSL56B SSL54B%20THRU%20SSL510B.pdf
SSL56B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 60V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
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SSL56B-F1-0000HF SSL54B%20THRU%20SSL510B.pdf
SSL56B-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 60V 5A DO214AA
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В кошику  од. на суму  грн.
SSL56B-F1-0000HF SSL54B%20THRU%20SSL510B.pdf
SSL56B-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE SCHOTTKY 60V 5A DO214AA
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В кошику  од. на суму  грн.
UG2DA UG2AA%20THRU%20UG2JA.pdf
UG2DA
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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UG2DA UG2AA%20THRU%20UG2JA.pdf
UG2DA
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UG2DA-F1-3000HF UG2AA%20THRU%20UG2JA.pdf
UG2DA-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
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UG2DA-F1-3000HF UG2AA%20THRU%20UG2JA.pdf
UG2DA-F1-3000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 200V 2A DO214AC
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YBS3010 YBS30005%20THRU%20YBS3010.pdf
YBS3010
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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YBS3010 YBS30005%20THRU%20YBS3010.pdf
YBS3010
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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YBS3010A YBS30005A%20THRU%20YBS3010A.pdf
YBS3010A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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YBS3010A YBS30005A%20THRU%20YBS3010A.pdf
YBS3010A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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YBS3010A-F1-0000HF YBS30005A%20THRU%20YBS3010A.pdf
YBS3010A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
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YBS3010A-F1-0000HF YBS30005A%20THRU%20YBS3010A.pdf
YBS3010A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
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YBS3010-F1-0000HF YBS30005%20THRU%20YBS3010.pdf
YBS3010-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
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В кошику  од. на суму  грн.
YBS3010-F1-0000HF YBS30005%20THRU%20YBS3010.pdf
YBS3010-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 3A YBS2
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YBSM6008 YBSM60005%20THRU%20YBSM6010.pdf
YBSM6008
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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YBSM6008 YBSM60005%20THRU%20YBSM6010.pdf
YBSM6008
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 800V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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YBSM6010 YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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YBSM6010 YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: YBS3
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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YBSM6010-F1-0000HF YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
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YBSM6010-F1-0000HF YBSM60005%20THRU%20YBSM6010.pdf
YBSM6010-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: RECT BRIDGE 1000V 6A YBS3
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YJB200G06B YJB200G06B.pdf
YJB200G06B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
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YJB200G06B YJB200G06B.pdf
YJB200G06B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 200A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Part Status: Active
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YJD20N06A YJD20N06A.pdf
YJD20N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
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YJD20N06A YJD20N06A.pdf
YJD20N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
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YJD20N06A-F1-0000HF YJD20N06A.pdf
YJD20N06A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
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YJD20N06A-F1-0000HF YJD20N06A.pdf
YJD20N06A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 20A TO-252
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YJD45G10A-F1-0000HF YJD45G10A.pdf
YJD45G10A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
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YJD45G10A-F1-0000HF YJD45G10A.pdf
YJD45G10A-F1-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 45A TO-252
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YJD80G06A-F1-0000 YJD80G06A.pdf
YJD80G06A-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
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YJD80G06A-F1-0000 YJD80G06A.pdf
YJD80G06A-F1-0000
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 80A TO-252
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YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
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YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
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YJG30N06A YJG30N06A.pdf
YJG30N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
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YJG30N06A YJG30N06A.pdf
YJG30N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
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YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
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YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
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YJG50N03A YJG50N03A.pdf
YJG50N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
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YJG50N03A YJG50N03A.pdf
YJG50N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товару немає в наявності
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YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
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В кошику  од. на суму  грн.
YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
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YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
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YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
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YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
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YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
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YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
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YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
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YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товару немає в наявності
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YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товару немає в наявності
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YJJ09N03A-F2-0000HF YJJ09N03A.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
товару немає в наявності
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