| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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AACS773-3ECB200B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBPackaging: Tube Polarization: Bidirectional Sensitivity: 6.6mV/A Mounting Type: Through Hole Output: Ratiometric, Voltage Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Response Time: 1.5µs Sensor Type: Open Loop Linearity: ±0.2% For Measuring: AC/DC Current - Supply (Max): 12mA Current - Sensing: ±200A Supplier Device Package: 5-CB Number of Channels: 1 |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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AACS773-3ECB200U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBPackaging: Tube Polarization: Unidirectional Sensitivity: 13.2mV/A Mounting Type: Through Hole Output: Ratiometric, Voltage Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Response Time: 1.5µs Sensor Type: Open Loop Linearity: ±0.2% For Measuring: AC/DC Current - Supply (Max): 12mA Current - Sensing: 200A Supplier Device Package: 5-CB Number of Channels: 1 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB050B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB050U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 4988 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB100B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB100U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 4984 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB150B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB150U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AC2M0025120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 94A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC2M0040120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 58A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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AC2M0045170D | APSEMI |
Description: SIC MOSFET N-CH 1700V 74A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Power Dissipation (Max): 528W Vgs(th) (Max) @ Id: 4V @ 18mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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AC2M0045170K | APSEMI |
Description: SIC MOSFET N-CH 1700V 74A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Power Dissipation (Max): 528W Vgs(th) (Max) @ Id: 4V @ 18mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AC2M0080120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 36A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 940 шт: термін постачання 21-31 дні (днів) |
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AC2M0160120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 18A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AC2M0280120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 11A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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AC2M1000170D | APSEMI |
Description: SIC MOSFET N-CH 1700V 6A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 0.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AC3M0015065D | APSEMI |
Description: SIC MOSFET N-CH 650V 122A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0015065K | APSEMI |
Description: SIC MOSFET N-CH 650V 122A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0016120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0016120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0021120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V Power Dissipation (Max): 472W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0021120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 102A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V Power Dissipation (Max): 472W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0025065D | APSEMI |
Description: SIC MOSFET N-CH 650V 98A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0025065K | APSEMI |
Description: SIC MOSFET N-CH 650V 98A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0032120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 64A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0032120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 64A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0040120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 67A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0040120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 67A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0045065D | APSEMI |
Description: SIC MOSFET N-CH 650V 50A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 178W Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0045065K | APSEMI |
Description: SIC MOSFET N-CH 650V 50A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 178W Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0060065D | APSEMI |
Description: SIC MOSFET N-CH 650V 38A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0060065K | APSEMI |
Description: SIC MOSFET N-CH 650V 38A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0065090D | APSEMI |
Description: SIC MOSFET N-CH 900V 37A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V Power Dissipation (Max): 120W Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 900 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0065100K | APSEMI |
Description: SIC MOSFET N-CH 1000V 33A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0075120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 33A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0075120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 33A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0120065D | APSEMI |
Description: SIC MOSFET N-CH 650V 23A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0120065K | APSEMI |
Description: SIC MOSFET N-CH 650V 23A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0120090D | APSEMI |
Description: SIC MOSFET N-CH 900V 24A TO247-3 |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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AC3M0120100K | APSEMI |
Description: SIC MOSFET N-CH 1000V 24A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0160120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 18A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 2.33mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0280090D | APSEMI |
Description: SIC MOSFET N-CH 900V 11A TO247-3 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0350120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V Power Dissipation (Max): 52W Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| AHG-302C | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SIP Packaging: Bulk Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Technology: Hall Effect Current - Supply (Max): 13mA Supplier Device Package: 4-SIP |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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AHW-101A | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SOPPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Surface Mount Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2V Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SOP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AHW-101A-4T | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SOTPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Surface Mount Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2V Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SOT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AHW-322B | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SIPPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -50°C ~ 125°C Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMT6132 | APSEMI |
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOTPackaging: Tape & Reel (TR) Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5V Technology: Hall Effect Current - Supply (Max): 10µA Supplier Device Package: SOT-23-3 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMT6133 | APSEMI |
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOTPackaging: Tape & Reel (TR) Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5V Technology: Hall Effect Current - Supply (Max): 10µA Supplier Device Package: SOT-23-3 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3ECB200B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBPackaging: Tube Polarization: Bidirectional Sensitivity: 6.6mV/A Mounting Type: Through Hole Output: Ratiometric, Voltage Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Response Time: 1.5µs Sensor Type: Open Loop Linearity: ±0.2% For Measuring: AC/DC Current - Supply (Max): 12mA Current - Sensing: ±200A Supplier Device Package: 5-CB Number of Channels: 1 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3ECB200U-PFF-T | APSEMI |
Description: CURRENT SENSOR IC 5PIN-CB Packaging: Tube Polarization: Unidirectional Sensitivity: 13.2mV/A Mounting Type: Through Hole Output: Ratiometric, Voltage Accuracy: ±1% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Response Time: 1.5µs Sensor Type: Open Loop Linearity: ±0.2% For Measuring: AC/DC Current - Supply (Max): 12mA Current - Sensing: 200A Supplier Device Package: 5-CB Number of Channels: 1 |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB050B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB100B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB150B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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APH0213E | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VPackaging: Tube Package / Case: 7-DIP (0.300", 7.62mm) Output Type: AC Mounting Type: Through Hole Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: PC Pin Load Current: 300 mA Supplier Device Package: 7-DIP Voltage - Load: 0 V ~ 600 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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APH0213EH | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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APH0223E | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VPackaging: Tube Package / Case: 7-DIP (0.300", 7.62mm) Output Type: AC Mounting Type: Through Hole Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: PC Pin Load Current: 300 mA Supplier Device Package: 7-DIP Voltage - Load: 0 V ~ 600 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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APH0223EH | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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APH2213E | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tube Package / Case: 7-DIP (0.300", 7.62mm) Output Type: AC Mounting Type: Through Hole Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: PC Pin Load Current: 900 mA Supplier Device Package: 7-DIP Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH2213EH | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tape & Reel (TR) Package / Case: 7-SMD (0.300", 7.62mm) Output Type: AC Mounting Type: Surface Mount Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: Gull Wing Load Current: 900 mA Supplier Device Package: 7-SMD Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| AACS773-3ECB200B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Bidirectional
Sensitivity: 6.6mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: ±200A
Supplier Device Package: 5-CB
Number of Channels: 1
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Bidirectional
Sensitivity: 6.6mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: ±200A
Supplier Device Package: 5-CB
Number of Channels: 1
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| AACS773-3ECB200U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Unidirectional
Sensitivity: 13.2mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: 200A
Supplier Device Package: 5-CB
Number of Channels: 1
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Unidirectional
Sensitivity: 13.2mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: 200A
Supplier Device Package: 5-CB
Number of Channels: 1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| AACS773-3KCB050B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| AACS773-3KCB050U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 4988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| AACS773-3KCB100B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| AACS773-3KCB100U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 4984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| AACS773-3KCB150B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| AACS773-3KCB150U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 139.07 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| AC2M0025120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 94A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 94A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 856.71 грн |
| 11+ | 769.88 грн |
| 51+ | 687.45 грн |
| 101+ | 464.49 грн |
| AC2M0040120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 58A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 58A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.10 грн |
| 10+ | 491.21 грн |
| 60+ | 392.99 грн |
| 240+ | 299.33 грн |
| 450+ | 249.44 грн |
| 900+ | 229.49 грн |
| AC2M0045170D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2337.34 грн |
| 10+ | 2100.64 грн |
| 60+ | 1680.51 грн |
| 240+ | 1279.98 грн |
| 450+ | 1066.65 грн |
| 900+ | 981.32 грн |
| AC2M0045170K |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2337.34 грн |
| 10+ | 2100.64 грн |
| 60+ | 1680.51 грн |
| 240+ | 1279.98 грн |
| 450+ | 1066.65 грн |
| 900+ | 981.32 грн |
| AC2M0080120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 36A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 36A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.96 грн |
| 10+ | 306.29 грн |
| 60+ | 245.03 грн |
| 240+ | 186.63 грн |
| 450+ | 155.53 грн |
| 900+ | 143.08 грн |
| AC2M0160120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.04 грн |
| 10+ | 199.34 грн |
| 60+ | 159.71 грн |
| 240+ | 121.40 грн |
| 450+ | 101.58 грн |
| 900+ | 93.52 грн |
| AC2M0280120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 11A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 11A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.04 грн |
| 10+ | 199.11 грн |
| 60+ | 159.27 грн |
| 240+ | 121.31 грн |
| 450+ | 101.09 грн |
| AC2M1000170D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 0.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 0.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.66 грн |
| 10+ | 180.92 грн |
| 60+ | 144.71 грн |
| 240+ | 110.21 грн |
| 450+ | 91.84 грн |
| 900+ | 84.50 грн |
| AC3M0015065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 122A TO247-
Description: SIC MOSFET N-CH 650V 122A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1334.84 грн |
| 10+ | 1199.58 грн |
| 60+ | 959.62 грн |
| 240+ | 730.91 грн |
| 450+ | 609.09 грн |
| 900+ | 560.36 грн |
| AC3M0015065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 122A TO247-
Description: SIC MOSFET N-CH 650V 122A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1334.84 грн |
| 10+ | 1199.58 грн |
| 60+ | 959.62 грн |
| 240+ | 730.91 грн |
| 450+ | 609.09 грн |
| 900+ | 560.36 грн |
| AC3M0016120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2159.41 грн |
| 10+ | 1940.55 грн |
| 60+ | 1552.47 грн |
| 240+ | 1182.45 грн |
| 450+ | 985.37 грн |
| 900+ | 906.54 грн |
| AC3M0016120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2430.61 грн |
| 11+ | 2184.41 грн |
| 51+ | 1950.38 грн |
| 101+ | 1317.86 грн |
| AC3M0021120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1121.64 грн |
| 11+ | 1008.19 грн |
| 51+ | 900.18 грн |
| 101+ | 608.24 грн |
| AC3M0021120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 102A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 102A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1121.64 грн |
| 11+ | 1008.19 грн |
| 51+ | 900.18 грн |
| 101+ | 608.24 грн |
| AC3M0025065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 98A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 98A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 834.76 грн |
| 10+ | 750.18 грн |
| 60+ | 600.18 грн |
| 240+ | 451.04 грн |
| 450+ | 375.87 грн |
| 900+ | 345.80 грн |
| AC3M0025065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 98A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 98A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 852.01 грн |
| 10+ | 765.58 грн |
| 60+ | 612.47 грн |
| 240+ | 464.53 грн |
| 450+ | 387.11 грн |
| 900+ | 356.14 грн |
| AC3M0032120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.40 грн |
| 10+ | 539.82 грн |
| 60+ | 431.83 грн |
| 240+ | 328.91 грн |
| 450+ | 274.09 грн |
| 900+ | 252.16 грн |
| AC3M0032120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 673.30 грн |
| 11+ | 604.93 грн |
| 51+ | 540.11 грн |
| 101+ | 364.95 грн |
| AC3M0040120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.10 грн |
| 10+ | 491.21 грн |
| 60+ | 392.99 грн |
| 240+ | 299.33 грн |
| 450+ | 249.44 грн |
| 900+ | 229.49 грн |
| AC3M0040120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 598.83 грн |
| 11+ | 537.68 грн |
| 51+ | 480.09 грн |
| 101+ | 324.40 грн |
| AC3M0045065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 594.92 грн |
| 11+ | 534.32 грн |
| 51+ | 477.08 грн |
| 101+ | 322.36 грн |
| AC3M0045065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 533.78 грн |
| 10+ | 479.82 грн |
| 60+ | 383.85 грн |
| 240+ | 292.36 грн |
| 450+ | 243.63 грн |
| 900+ | 224.14 грн |
| AC3M0060065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 400.53 грн |
| 10+ | 359.88 грн |
| 60+ | 287.89 грн |
| 240+ | 219.27 грн |
| 450+ | 182.73 грн |
| 900+ | 168.11 грн |
| AC3M0060065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 38A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 38A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 409.94 грн |
| 10+ | 368.41 грн |
| 60+ | 294.76 грн |
| 240+ | 224.50 грн |
| 450+ | 187.08 грн |
| 900+ | 172.11 грн |
| AC3M0065090D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 900V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Description: SIC MOSFET N-CH 900V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 614.51 грн |
| 10+ | 552.65 грн |
| 60+ | 442.12 грн |
| 240+ | 336.75 грн |
| 450+ | 280.62 грн |
| 900+ | 258.17 грн |
| AC3M0065100K |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1000V 33A TO247-
Description: SIC MOSFET N-CH 1000V 33A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 614.51 грн |
| 10+ | 552.65 грн |
| 60+ | 442.12 грн |
| 240+ | 336.75 грн |
| 450+ | 280.62 грн |
| 900+ | 258.17 грн |
| AC3M0075120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.96 грн |
| 10+ | 306.29 грн |
| 60+ | 245.03 грн |
| 240+ | 186.63 грн |
| 450+ | 155.53 грн |
| 900+ | 143.08 грн |
| AC3M0075120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.10 грн |
| 11+ | 335.33 грн |
| 51+ | 299.41 грн |
| 101+ | 202.30 грн |
| AC3M0120065D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.26 грн |
| 10+ | 302.52 грн |
| 60+ | 242.03 грн |
| 240+ | 184.35 грн |
| 450+ | 153.62 грн |
| 900+ | 141.33 грн |
| AC3M0120065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 23A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 23A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.12 грн |
| 10+ | 299.88 грн |
| 60+ | 239.90 грн |
| 240+ | 182.72 грн |
| 450+ | 152.27 грн |
| 900+ | 140.09 грн |
| AC3M0120090D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 900V 24A TO247-3
Description: SIC MOSFET N-CH 900V 24A TO247-3
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.96 грн |
| 10+ | 306.29 грн |
| 60+ | 245.03 грн |
| 240+ | 186.63 грн |
| 450+ | 155.53 грн |
| 900+ | 143.08 грн |
| AC3M0120100K |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1000V 24A TO247-
Description: SIC MOSFET N-CH 1000V 24A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.04 грн |
| 10+ | 199.11 грн |
| 60+ | 159.27 грн |
| 240+ | 121.31 грн |
| 450+ | 101.09 грн |
| 900+ | 93.01 грн |
| AC3M0160120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.04 грн |
| 10+ | 199.11 грн |
| 60+ | 159.27 грн |
| 240+ | 121.31 грн |
| 450+ | 101.09 грн |
| 900+ | 93.01 грн |
| AC3M0280090D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 900V 11A TO247-3
Description: SIC MOSFET N-CH 900V 11A TO247-3
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.04 грн |
| 10+ | 199.11 грн |
| 60+ | 159.27 грн |
| 240+ | 121.31 грн |
| 450+ | 101.09 грн |
| 900+ | 93.01 грн |
| AC3M0350120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.55 грн |
| 10+ | 194.06 грн |
| 60+ | 155.25 грн |
| 240+ | 118.24 грн |
| 450+ | 98.54 грн |
| 900+ | 90.65 грн |
| AHG-302C |
Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Bulk
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Hall Effect
Current - Supply (Max): 13mA
Supplier Device Package: 4-SIP
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Bulk
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Hall Effect
Current - Supply (Max): 13mA
Supplier Device Package: 4-SIP
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.33 грн |
| 10+ | 37.66 грн |
| 100+ | 33.66 грн |
| 500+ | 27.79 грн |
| 1000+ | 26.52 грн |
| 2000+ | 24.56 грн |
| 5000+ | 22.37 грн |
| AHW-101A |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SOP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOP
Description: SEN HALL EFFECT ANLG VOLT 4-SOP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 58+ | 5.49 грн |
| 68+ | 4.45 грн |
| 100+ | 4.00 грн |
| 500+ | 3.30 грн |
| 1000+ | 3.15 грн |
| 2000+ | 2.92 грн |
| 5000+ | 2.66 грн |
| 10000+ | 2.50 грн |
| AHW-101A-4T |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SOT
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOT
Description: SEN HALL EFFECT ANLG VOLT 4-SOT
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 58+ | 5.49 грн |
| 68+ | 4.45 грн |
| 100+ | 4.00 грн |
| 500+ | 3.30 грн |
| 1000+ | 3.15 грн |
| 2000+ | 2.92 грн |
| 5000+ | 2.66 грн |
| 10000+ | 2.50 грн |
| AHW-322B |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -50°C ~ 125°C
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SIP
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -50°C ~ 125°C
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 10+ | 32.68 грн |
| 100+ | 29.19 грн |
| 500+ | 24.10 грн |
| 1000+ | 23.00 грн |
| 2000+ | 21.30 грн |
| 5000+ | 19.40 грн |
| 10000+ | 18.23 грн |
| AMT6132 |
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Виробник: APSEMI
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.62 грн |
| 40+ | 7.70 грн |
| 100+ | 6.88 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.42 грн |
| 2000+ | 5.02 грн |
| 5000+ | 4.57 грн |
| 10000+ | 4.30 грн |
| AMT6133 |
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Виробник: APSEMI
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.62 грн |
| 40+ | 7.70 грн |
| 100+ | 6.88 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.42 грн |
| 2000+ | 5.02 грн |
| 5000+ | 4.57 грн |
| 10000+ | 4.30 грн |
| AMTC921-3ECB200B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Bidirectional
Sensitivity: 6.6mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: ±200A
Supplier Device Package: 5-CB
Number of Channels: 1
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Polarization: Bidirectional
Sensitivity: 6.6mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: ±200A
Supplier Device Package: 5-CB
Number of Channels: 1
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 132.48 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| 10000+ | 100.22 грн |
| AMTC921-3ECB200U-PFF-T |
Виробник: APSEMI
Description: CURRENT SENSOR IC 5PIN-CB
Packaging: Tube
Polarization: Unidirectional
Sensitivity: 13.2mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: 200A
Supplier Device Package: 5-CB
Number of Channels: 1
Description: CURRENT SENSOR IC 5PIN-CB
Packaging: Tube
Polarization: Unidirectional
Sensitivity: 13.2mV/A
Mounting Type: Through Hole
Output: Ratiometric, Voltage
Accuracy: ±1%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Response Time: 1.5µs
Sensor Type: Open Loop
Linearity: ±0.2%
For Measuring: AC/DC
Current - Supply (Max): 12mA
Current - Sensing: 200A
Supplier Device Package: 5-CB
Number of Channels: 1
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.85 грн |
| 10+ | 189.53 грн |
| AMTC921-3KCB050B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 132.48 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| 10000+ | 100.22 грн |
| AMTC921-3KCB100B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 132.48 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| 10000+ | 100.22 грн |
| AMTC921-3KCB150B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.87 грн |
| 10+ | 179.64 грн |
| 100+ | 160.41 грн |
| 500+ | 132.48 грн |
| 1000+ | 126.43 грн |
| 2000+ | 117.06 грн |
| 5000+ | 106.61 грн |
| 10000+ | 100.22 грн |
| APH0213E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 300mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 53.51 грн |
| 100+ | 46.81 грн |
| 500+ | 35.43 грн |
| 1000+ | 32.21 грн |
| 2000+ | 29.83 грн |
| 5000+ | 27.16 грн |
| 10000+ | 24.69 грн |
| APH0213EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Description: SSR RELAY SPST-NO 300mA 600V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 53.51 грн |
| 100+ | 46.81 грн |
| 500+ | 35.43 грн |
| 1000+ | 32.21 грн |
| 2000+ | 29.83 грн |
| 5000+ | 27.16 грн |
| 10000+ | 24.69 грн |
| APH0223E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 300mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 53.51 грн |
| 100+ | 46.81 грн |
| 500+ | 35.43 грн |
| 1000+ | 32.21 грн |
| 2000+ | 29.83 грн |
| 5000+ | 27.16 грн |
| 10000+ | 24.69 грн |
| APH0223EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Description: SSR RELAY SPST-NO 300mA 600V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 53.67 грн |
| 100+ | 47.17 грн |
| 500+ | 35.17 грн |
| 1000+ | 32.26 грн |
| 2000+ | 29.84 грн |
| 5000+ | 27.44 грн |
| 10000+ | 25.05 грн |
| APH2213E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 59.85 грн |
| 100+ | 52.35 грн |
| APH2213EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 59.85 грн |
| 100+ | 52.35 грн |















