| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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AACS773-3ECB200B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBPackaging: Tube Number of Channels: 1 Supplier Device Package: 5-CB Current - Sensing: ±200A Current - Supply (Max): 12mA For Measuring: AC/DC Linearity: ±0.2% Sensor Type: Open Loop Response Time: 1.5µs Voltage - Supply: 3.3V Operating Temperature: -40°C ~ 85°C Accuracy: ±1% Output: Ratiometric, Voltage Mounting Type: Through Hole Sensitivity: 6.6mV/A Polarization: Bidirectional |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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AACS773-3ECB200U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBNumber of Channels: 1 Supplier Device Package: 5-CB Current - Sensing: 200A Current - Supply (Max): 12mA For Measuring: AC/DC Linearity: ±0.2% Sensor Type: Open Loop Response Time: 1.5µs Voltage - Supply: 3.3V Operating Temperature: -40°C ~ 85°C Accuracy: ±1% Output: Ratiometric, Voltage Mounting Type: Through Hole Sensitivity: 13.2mV/A Polarization: Unidirectional Packaging: Tube |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB050B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB050U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 4988 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB100B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB100U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 4984 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB150B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AACS773-3KCB150U-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AC2M0025120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 94A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC2M0040120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 58A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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AC2M0045170D | APSEMI |
Description: SIC MOSFET N-CH 1700V 74A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Power Dissipation (Max): 528W Vgs(th) (Max) @ Id: 4V @ 18mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
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AC2M0045170K | APSEMI |
Description: SIC MOSFET N-CH 1700V 74A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Power Dissipation (Max): 528W Vgs(th) (Max) @ Id: 4V @ 18mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AC2M0080120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 37A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC2M0160120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 18A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC2M0280120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 11A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC2M1000170D | APSEMI |
Description: SIC MOSFET N-CH 1700V 6A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 0.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AC3M0016120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0016120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0021120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 117A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V Power Dissipation (Max): 472W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0021120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 102A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V Power Dissipation (Max): 472W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0025065D | APSEMI |
Description: SIC MOSFET N-CH 650V 98A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0025065K | APSEMI |
Description: SIC MOSFET N-CH 650V 98A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.22mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0032120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 64A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0032120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 64A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0040120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 67A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0040120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 67A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V Power Dissipation (Max): 330W Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0045065D | APSEMI |
Description: SIC MOSFET N-CH 650V 50A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 178W Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0045065K | APSEMI |
Description: SIC MOSFET N-CH 650V 50A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Power Dissipation (Max): 178W Vgs(th) (Max) @ Id: 3.6V @ 4.84mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0060065D | APSEMI |
Description: SIC MOSFET N-CH 650V 38A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0060065K | APSEMI |
Description: SIC MOSFET N-CH 650V 38A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0065090D | APSEMI |
Description: SIC MOSFET N-CH 900V 37A TO247-3Drain to Source Voltage (Vdss): 900 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 3.5V @ 5mA Power Dissipation (Max): 120W Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 37A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0065100K | APSEMI |
Description: SIC MOSFET N-CH 1000V 33A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0075120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 33A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0075120K | APSEMI |
Description: SIC MOSFET N-CH 1200V 33A TO247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0120065D | APSEMI |
Description: SIC MOSFET N-CH 650V 23A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0120065K | APSEMI |
Description: SIC MOSFET N-CH 650V 23A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0120100K | APSEMI |
Description: SIC MOSFET N-CH 1000V 24A TO247- |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AC3M0160120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 18A TO247-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 2.33mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AC3M0350120D | APSEMI |
Description: SIC MOSFET N-CH 1200V 8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V Power Dissipation (Max): 52W Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| AHG-302C | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SIP Packaging: Bulk Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Technology: Hall Effect Current - Supply (Max): 13mA Supplier Device Package: 4-SIP |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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AHW-101A | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SOPPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Surface Mount Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2V Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SOP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AHW-101A-4T | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SOTPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Surface Mount Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2V Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SOT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AHW-322B | APSEMI |
Description: SEN HALL EFFECT ANLG VOLT 4-SIPPackaging: Tape & Reel (TR) Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -50°C ~ 125°C Technology: Hall Effect Current - Supply (Max): 20mA Supplier Device Package: 4-SIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMT6132 | APSEMI |
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOTPackaging: Tape & Reel (TR) Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5V Technology: Hall Effect Current - Supply (Max): 10µA Supplier Device Package: SOT-23-3 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMT6133 | APSEMI |
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOTPackaging: Tape & Reel (TR) Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5V Technology: Hall Effect Current - Supply (Max): 10µA Supplier Device Package: SOT-23-3 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3ECB200B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 200A 5-CBNumber of Channels: 1 Supplier Device Package: 5-CB Current - Sensing: ±200A Current - Supply (Max): 12mA For Measuring: AC/DC Linearity: ±0.2% Sensor Type: Open Loop Response Time: 1.5µs Voltage - Supply: 3.3V Operating Temperature: -40°C ~ 85°C Accuracy: ±1% Output: Ratiometric, Voltage Mounting Type: Through Hole Sensitivity: 6.6mV/A Polarization: Bidirectional Packaging: Tube |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3ECB200U-PFF-T | APSEMI |
Description: CURRENT SENSOR IC 5PIN-CB Supplier Device Package: 5-CB Current - Sensing: 200A Current - Supply (Max): 12mA For Measuring: AC/DC Linearity: ±0.2% Sensor Type: Open Loop Response Time: 1.5µs Voltage - Supply: 3.3V Operating Temperature: -40°C ~ 85°C Accuracy: ±1% Output: Ratiometric, Voltage Mounting Type: Through Hole Sensitivity: 13.2mV/A Polarization: Unidirectional Packaging: Tube Number of Channels: 1 |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB050B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 50A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB100B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 100A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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AMTC921-3KCB150B-PFF-T | APSEMI |
Description: CURRENT SENSOR OL 150A 5-CB |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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APH0213E | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VVoltage - Load: 0 V ~ 600 V Supplier Device Package: 7-DIP Load Current: 300 mA Termination Style: PC Pin Operating Temperature: -30°C ~ 85°C Circuit: SPST-NO (1 Form A) Voltage - Input: 1.21 ~ 1.3VDC Mounting Type: Through Hole Output Type: AC Package / Case: 7-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH0213EH | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VVoltage - Load: 0 V ~ 600 V Supplier Device Package: 7-SMD Load Current: 300 mA Termination Style: Gull Wing Operating Temperature: -30°C ~ 85°C Circuit: SPST-NO (1 Form A) Voltage - Input: 1.21 ~ 1.3VDC Mounting Type: Surface Mount Output Type: AC Package / Case: 7-SMD (0.300", 7.62mm) Packaging: Tape & Reel (TR) |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH0223E | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VVoltage - Load: 0 V ~ 600 V Supplier Device Package: 7-DIP Load Current: 300 mA Termination Style: PC Pin Operating Temperature: -30°C ~ 85°C Circuit: SPST-NO (1 Form A) Voltage - Input: 1.21 ~ 1.3VDC Mounting Type: Through Hole Output Type: AC Package / Case: 7-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH0223EH | APSEMI |
Description: SSR RELAY SPST-NO 300mA 600VVoltage - Input: 1.21 ~ 1.3VDC Mounting Type: Surface Mount Output Type: AC Package / Case: 7-SMD (0.300", 7.62mm) Packaging: Tape & Reel (TR) Voltage - Load: 0 V ~ 600 V Supplier Device Package: 7-SMD Load Current: 300 mA Termination Style: Gull Wing Operating Temperature: -30°C ~ 85°C Circuit: SPST-NO (1 Form A) |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH2213E | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tube Package / Case: 7-DIP (0.300", 7.62mm) Output Type: AC Mounting Type: Through Hole Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: PC Pin Load Current: 900 mA Supplier Device Package: 7-DIP Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH2213EH | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tape & Reel (TR) Package / Case: 7-SMD (0.300", 7.62mm) Output Type: AC Mounting Type: Surface Mount Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: Gull Wing Load Current: 900 mA Supplier Device Package: 7-SMD Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH2223E | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tube Package / Case: 7-DIP (0.300", 7.62mm) Output Type: AC Mounting Type: Through Hole Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: PC Pin Load Current: 900 mA Supplier Device Package: 7-DIP Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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APH2223EH | APSEMI |
Description: SSR RELAY SPST-NO 900mA 600VPackaging: Tape & Reel (TR) Package / Case: 7-SMD (0.300", 7.62mm) Output Type: AC Mounting Type: Surface Mount Voltage - Input: 1.21 ~ 1.3VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -30°C ~ 85°C Termination Style: Gull Wing Load Current: 900 mA Supplier Device Package: 7-SMD Voltage - Load: 0 V ~ 600 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| APS1016ES5 | APSEMI | SOT235 0633+ |
на замовлення 2728 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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APV210E | APSEMI |
Description: SSR RELAY SPST-NO 120mA 350VMounting Type: Through Hole Output Type: AC, DC Package / Case: 6-SMD (0.300", 7.62mm) Packaging: Tube Relay Type: Photo-Coupled Relay (Photorelay) On-State Resistance (Max): 25 Ohms Voltage - Load: 0 V ~ 350 V Supplier Device Package: 6-DIP Approval Agency: UL Load Current: 120 mA Termination Style: PC Pin Operating Temperature: -40°C ~ 85°C Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2 ~ 1.4VDC |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
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| AACS773-3ECB200B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: ±200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 6.6mV/A
Polarization: Bidirectional
Description: CURRENT SENSOR OL 200A 5-CB
Packaging: Tube
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: ±200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 6.6mV/A
Polarization: Bidirectional
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 140.68 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| AACS773-3ECB200U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: 200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 13.2mV/A
Polarization: Unidirectional
Packaging: Tube
Description: CURRENT SENSOR OL 200A 5-CB
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: 200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 13.2mV/A
Polarization: Unidirectional
Packaging: Tube
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 182.19 грн |
| 100+ | 162.67 грн |
| 500+ | 141.02 грн |
| 1000+ | 128.20 грн |
| 2000+ | 118.71 грн |
| 5000+ | 108.11 грн |
| AACS773-3KCB050B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 140.68 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| AACS773-3KCB050U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 4988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 182.19 грн |
| 100+ | 162.67 грн |
| 500+ | 141.02 грн |
| 1000+ | 128.20 грн |
| 2000+ | 118.71 грн |
| AACS773-3KCB100B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 140.68 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| AACS773-3KCB100U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 4984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 182.19 грн |
| 100+ | 162.67 грн |
| 500+ | 141.02 грн |
| 1000+ | 128.20 грн |
| 2000+ | 118.71 грн |
| AACS773-3KCB150B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 140.68 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| AACS773-3KCB150U-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 182.19 грн |
| 100+ | 162.67 грн |
| 500+ | 141.02 грн |
| 1000+ | 128.20 грн |
| 2000+ | 118.71 грн |
| 5000+ | 108.11 грн |
| AC2M0025120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 94A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 94A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 866.67 грн |
| 11+ | 778.83 грн |
| 51+ | 695.44 грн |
| 101+ | 469.89 грн |
| AC2M0040120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 58A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 58A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.46 грн |
| 10+ | 496.93 грн |
| 60+ | 397.56 грн |
| 240+ | 302.81 грн |
| 450+ | 252.34 грн |
| 900+ | 232.15 грн |
| AC2M0045170D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2364.51 грн |
| 10+ | 2125.07 грн |
| 60+ | 1700.06 грн |
| 240+ | 1294.86 грн |
| 450+ | 1079.05 грн |
| 900+ | 992.73 грн |
| AC2M0045170K |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2364.51 грн |
| 10+ | 2125.07 грн |
| 60+ | 1700.06 грн |
| 240+ | 1294.86 грн |
| 450+ | 1079.05 грн |
| 900+ | 992.73 грн |
| AC2M0080120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 37A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 37A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 20V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.23 грн |
| 11+ | 339.99 грн |
| 51+ | 303.55 грн |
| 101+ | 205.11 грн |
| AC2M0160120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.01 грн |
| 11+ | 220.46 грн |
| 51+ | 196.86 грн |
| 101+ | 133.03 грн |
| AC2M0280120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 11A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 11A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.43 грн |
| 11+ | 197.90 грн |
| 51+ | 176.71 грн |
| 101+ | 119.41 грн |
| AC2M1000170D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 0.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Description: SIC MOSFET N-CH 1700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 0.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.99 грн |
| 10+ | 183.03 грн |
| 60+ | 146.39 грн |
| 240+ | 111.49 грн |
| 450+ | 92.91 грн |
| 900+ | 85.48 грн |
| AC3M0016120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2184.52 грн |
| 10+ | 1963.12 грн |
| 60+ | 1570.52 грн |
| 240+ | 1196.20 грн |
| 450+ | 996.83 грн |
| 900+ | 917.08 грн |
| AC3M0016120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2458.87 грн |
| 11+ | 2209.82 грн |
| 51+ | 1973.06 грн |
| 101+ | 1333.18 грн |
| AC3M0021120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 117A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1134.68 грн |
| 11+ | 1019.91 грн |
| 51+ | 910.64 грн |
| 101+ | 615.32 грн |
| AC3M0021120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 102A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 102A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 15V
Power Dissipation (Max): 472W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1134.68 грн |
| 11+ | 1019.91 грн |
| 51+ | 910.64 грн |
| 101+ | 615.32 грн |
| AC3M0025065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 98A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 98A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 844.47 грн |
| 10+ | 758.90 грн |
| 60+ | 607.16 грн |
| 240+ | 456.28 грн |
| 450+ | 380.24 грн |
| 900+ | 349.82 грн |
| AC3M0025065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 98A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 98A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 844.47 грн |
| 10+ | 758.83 грн |
| 60+ | 607.04 грн |
| 240+ | 460.42 грн |
| 450+ | 383.68 грн |
| 900+ | 352.99 грн |
| AC3M0032120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 681.13 грн |
| 11+ | 611.96 грн |
| 51+ | 546.40 грн |
| 101+ | 369.19 грн |
| AC3M0032120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 681.13 грн |
| 11+ | 611.96 грн |
| 51+ | 546.40 грн |
| 101+ | 369.19 грн |
| AC3M0040120D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.46 грн |
| 10+ | 496.93 грн |
| 60+ | 397.56 грн |
| 240+ | 302.81 грн |
| 450+ | 252.34 грн |
| 900+ | 232.15 грн |
| AC3M0040120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 67A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A
Rds On (Max) @ Id, Vgs: 54.5mOhm @ 33.3A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 605.80 грн |
| 11+ | 543.93 грн |
| 51+ | 485.67 грн |
| 101+ | 328.17 грн |
| AC3M0045065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.83 грн |
| 11+ | 540.53 грн |
| 51+ | 482.63 грн |
| 101+ | 326.11 грн |
| AC3M0045065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 178W
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.83 грн |
| 11+ | 540.53 грн |
| 51+ | 482.63 грн |
| 101+ | 326.11 грн |
| AC3M0060065D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.70 грн |
| 10+ | 372.69 грн |
| 60+ | 298.18 грн |
| 240+ | 227.11 грн |
| 450+ | 189.26 грн |
| 900+ | 174.11 грн |
| AC3M0060065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 38A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 38A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.70 грн |
| 10+ | 372.69 грн |
| 60+ | 298.18 грн |
| 240+ | 227.11 грн |
| 450+ | 189.26 грн |
| 900+ | 174.11 грн |
| AC3M0065090D |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 900V 37A TO247-3
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 37A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SIC MOSFET N-CH 900V 37A TO247-3
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 37A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 621.66 грн |
| 10+ | 559.08 грн |
| 60+ | 447.26 грн |
| 240+ | 340.66 грн |
| 450+ | 283.88 грн |
| 900+ | 261.17 грн |
| AC3M0065100K |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1000V 33A TO247-
Description: SIC MOSFET N-CH 1000V 33A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 621.66 грн |
| 10+ | 559.08 грн |
| 60+ | 447.26 грн |
| 240+ | 340.66 грн |
| 450+ | 283.88 грн |
| 900+ | 261.17 грн |
| AC3M0075120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 344.92 грн |
| 10+ | 309.85 грн |
| 60+ | 247.88 грн |
| 240+ | 188.80 грн |
| 450+ | 157.34 грн |
| 900+ | 144.75 грн |
| AC3M0075120K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 33A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 95mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.43 грн |
| 11+ | 339.23 грн |
| 51+ | 302.89 грн |
| 101+ | 204.66 грн |
| AC3M0120065D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.17 грн |
| 10+ | 306.04 грн |
| 60+ | 244.85 грн |
| 240+ | 186.49 грн |
| 450+ | 155.41 грн |
| 900+ | 142.98 грн |
| AC3M0120065K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 650V 23A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Description: SIC MOSFET N-CH 650V 23A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 340.17 грн |
| 10+ | 306.04 грн |
| 60+ | 244.85 грн |
| 240+ | 186.49 грн |
| 450+ | 155.41 грн |
| 900+ | 142.98 грн |
| AC3M0120100K |
![]() |
Виробник: APSEMI
Description: SIC MOSFET N-CH 1000V 24A TO247-
Description: SIC MOSFET N-CH 1000V 24A TO247-
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.61 грн |
| 10+ | 201.43 грн |
| 60+ | 161.12 грн |
| 240+ | 122.72 грн |
| 450+ | 102.27 грн |
| 900+ | 94.09 грн |
| AC3M0160120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 18A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 2.33mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.81 грн |
| 11+ | 220.95 грн |
| 51+ | 197.30 грн |
| 101+ | 133.32 грн |
| AC3M0350120D |
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Виробник: APSEMI
Description: SIC MOSFET N-CH 1200V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SIC MOSFET N-CH 1200V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.06 грн |
| 10+ | 196.31 грн |
| 60+ | 157.05 грн |
| 240+ | 119.62 грн |
| 450+ | 99.68 грн |
| 900+ | 91.71 грн |
| AHG-302C |
Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Bulk
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Hall Effect
Current - Supply (Max): 13mA
Supplier Device Package: 4-SIP
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Bulk
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Hall Effect
Current - Supply (Max): 13mA
Supplier Device Package: 4-SIP
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.61 грн |
| 10+ | 38.94 грн |
| 100+ | 34.77 грн |
| 500+ | 28.72 грн |
| 1000+ | 27.41 грн |
| 2000+ | 25.38 грн |
| 5000+ | 23.11 грн |
| AHW-101A |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SOP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOP
Description: SEN HALL EFFECT ANLG VOLT 4-SOP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 58+ | 5.55 грн |
| 68+ | 4.51 грн |
| 100+ | 4.05 грн |
| 500+ | 3.34 грн |
| 1000+ | 3.19 грн |
| 2000+ | 2.95 грн |
| 5000+ | 2.69 грн |
| 10000+ | 2.53 грн |
| AHW-101A-4T |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SOT
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOT
Description: SEN HALL EFFECT ANLG VOLT 4-SOT
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2V
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SOT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 58+ | 5.55 грн |
| 68+ | 4.51 грн |
| 100+ | 4.05 грн |
| 500+ | 3.34 грн |
| 1000+ | 3.19 грн |
| 2000+ | 2.95 грн |
| 5000+ | 2.69 грн |
| 10000+ | 2.53 грн |
| AHW-322B |
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Виробник: APSEMI
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -50°C ~ 125°C
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SIP
Description: SEN HALL EFFECT ANLG VOLT 4-SIP
Packaging: Tape & Reel (TR)
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -50°C ~ 125°C
Technology: Hall Effect
Current - Supply (Max): 20mA
Supplier Device Package: 4-SIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 10+ | 33.06 грн |
| 100+ | 29.53 грн |
| 500+ | 24.38 грн |
| 1000+ | 23.27 грн |
| 2000+ | 21.55 грн |
| 5000+ | 19.62 грн |
| 10000+ | 18.45 грн |
| AMT6132 |
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Виробник: APSEMI
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.72 грн |
| 40+ | 7.71 грн |
| 100+ | 6.87 грн |
| 500+ | 5.67 грн |
| 1000+ | 5.41 грн |
| 2000+ | 5.01 грн |
| 5000+ | 4.57 грн |
| 10000+ | 4.29 грн |
| AMT6133 |
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Виробник: APSEMI
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
Description: MAGNETIC SWITCH 3D OMNIPOLAR SOT
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5V
Technology: Hall Effect
Current - Supply (Max): 10µA
Supplier Device Package: SOT-23-3
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.72 грн |
| 40+ | 7.71 грн |
| 100+ | 6.87 грн |
| 500+ | 5.67 грн |
| 1000+ | 5.41 грн |
| 2000+ | 5.01 грн |
| 5000+ | 4.57 грн |
| 10000+ | 4.29 грн |
| AMTC921-3ECB200B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 200A 5-CB
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: ±200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 6.6mV/A
Polarization: Bidirectional
Packaging: Tube
Description: CURRENT SENSOR OL 200A 5-CB
Number of Channels: 1
Supplier Device Package: 5-CB
Current - Sensing: ±200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 6.6mV/A
Polarization: Bidirectional
Packaging: Tube
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 134.02 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| 10000+ | 101.38 грн |
| AMTC921-3ECB200U-PFF-T |
Виробник: APSEMI
Description: CURRENT SENSOR IC 5PIN-CB
Supplier Device Package: 5-CB
Current - Sensing: 200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 13.2mV/A
Polarization: Unidirectional
Packaging: Tube
Number of Channels: 1
Description: CURRENT SENSOR IC 5PIN-CB
Supplier Device Package: 5-CB
Current - Sensing: 200A
Current - Supply (Max): 12mA
For Measuring: AC/DC
Linearity: ±0.2%
Sensor Type: Open Loop
Response Time: 1.5µs
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Accuracy: ±1%
Output: Ratiometric, Voltage
Mounting Type: Through Hole
Sensitivity: 13.2mV/A
Polarization: Unidirectional
Packaging: Tube
Number of Channels: 1
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.30 грн |
| 10+ | 191.73 грн |
| AMTC921-3KCB050B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 50A 5-CB
Description: CURRENT SENSOR OL 50A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 134.02 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| 10000+ | 101.38 грн |
| AMTC921-3KCB100B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 100A 5-CB
Description: CURRENT SENSOR OL 100A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 134.02 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| 10000+ | 101.38 грн |
| AMTC921-3KCB150B-PFF-T |
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Виробник: APSEMI
Description: CURRENT SENSOR OL 150A 5-CB
Description: CURRENT SENSOR OL 150A 5-CB
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.20 грн |
| 10+ | 181.73 грн |
| 100+ | 162.28 грн |
| 500+ | 134.02 грн |
| 1000+ | 127.90 грн |
| 2000+ | 118.42 грн |
| 5000+ | 107.85 грн |
| 10000+ | 101.38 грн |
| APH0213E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-DIP
Load Current: 300 mA
Termination Style: PC Pin
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Through Hole
Output Type: AC
Package / Case: 7-DIP (0.300", 7.62mm)
Packaging: Tube
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-DIP
Load Current: 300 mA
Termination Style: PC Pin
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Through Hole
Output Type: AC
Package / Case: 7-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 55.59 грн |
| 100+ | 48.64 грн |
| APH0213EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-SMD
Load Current: 300 mA
Termination Style: Gull Wing
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Surface Mount
Output Type: AC
Package / Case: 7-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-SMD
Load Current: 300 mA
Termination Style: Gull Wing
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Surface Mount
Output Type: AC
Package / Case: 7-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 55.59 грн |
| 100+ | 48.64 грн |
| APH0223E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-DIP
Load Current: 300 mA
Termination Style: PC Pin
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Through Hole
Output Type: AC
Package / Case: 7-DIP (0.300", 7.62mm)
Packaging: Tube
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-DIP
Load Current: 300 mA
Termination Style: PC Pin
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Through Hole
Output Type: AC
Package / Case: 7-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 55.59 грн |
| 100+ | 48.64 грн |
| APH0223EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Surface Mount
Output Type: AC
Package / Case: 7-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-SMD
Load Current: 300 mA
Termination Style: Gull Wing
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Description: SSR RELAY SPST-NO 300mA 600V
Voltage - Input: 1.21 ~ 1.3VDC
Mounting Type: Surface Mount
Output Type: AC
Package / Case: 7-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Voltage - Load: 0 V ~ 600 V
Supplier Device Package: 7-SMD
Load Current: 300 mA
Termination Style: Gull Wing
Operating Temperature: -30°C ~ 85°C
Circuit: SPST-NO (1 Form A)
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 55.59 грн |
| 100+ | 48.64 грн |
| APH2213E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 60.55 грн |
| 100+ | 52.96 грн |
| APH2213EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 60.55 грн |
| 100+ | 52.96 грн |
| APH2223E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tube
Package / Case: 7-DIP (0.300", 7.62mm)
Output Type: AC
Mounting Type: Through Hole
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: PC Pin
Load Current: 900 mA
Supplier Device Package: 7-DIP
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 60.55 грн |
| 100+ | 52.96 грн |
| APH2223EH |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
Description: SSR RELAY SPST-NO 900mA 600V
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD (0.300", 7.62mm)
Output Type: AC
Mounting Type: Surface Mount
Voltage - Input: 1.21 ~ 1.3VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -30°C ~ 85°C
Termination Style: Gull Wing
Load Current: 900 mA
Supplier Device Package: 7-SMD
Voltage - Load: 0 V ~ 600 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.64 грн |
| 10+ | 60.55 грн |
| 100+ | 52.96 грн |
| APS1016ES5 |
Виробник: APSEMI
SOT235 0633+
SOT235 0633+
на замовлення 2728 шт:
термін постачання 14-28 дні (днів)
| APV210E |
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Виробник: APSEMI
Description: SSR RELAY SPST-NO 120mA 350V
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 25 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-DIP
Approval Agency: UL
Load Current: 120 mA
Termination Style: PC Pin
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2 ~ 1.4VDC
Description: SSR RELAY SPST-NO 120mA 350V
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tube
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 25 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-DIP
Approval Agency: UL
Load Current: 120 mA
Termination Style: PC Pin
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2 ~ 1.4VDC
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.61 грн |
| 10+ | 56.96 грн |
| 100+ | 49.86 грн |
| 500+ | 37.73 грн |
| 1000+ | 34.30 грн |
| 2000+ | 31.76 грн |
| 5000+ | 28.93 грн |
| 10000+ | 26.30 грн |


















