Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74531) > Сторінка 1159 з 1243

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AP7361C-33SP-13 AP7361C-33SP-13 DIODES INCORPORATED AP7361C.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8-EP; SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SO8-EP
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Input voltage: 2.2...6V
Output current: 1A
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AP64502SP-13 DIODES INCORPORATED AP64502.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Efficiency: 85%
Output voltage: 0.8...40V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 100kHz...2.2MHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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AL9910SP-13 DIODES INCORPORATED AL9910_A.pdf Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; PWM,linear dimming; 90%
Operating temperature: -40...85°C
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Efficiency: 90%
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Mounting: SMD
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AP64502QSP-13 DIODES INCORPORATED AP64502Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Efficiency: 85%
Application: automotive industry
Output voltage: 0.8...40V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 100kHz...2.2MHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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AP64501QSP-13 DIODES INCORPORATED AP64501Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Efficiency: 85%
Application: automotive industry
Output voltage: 0.8...39V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 510...630kHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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DXT13003DG-13 DXT13003DG-13 DIODES INCORPORATED DXT13003DG.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 1.3A
Power dissipation: 3W
Case: SOT223
Current gain: 5...40
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Pulsed collector current: 3A
Frequency: 4MHz
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KBP310G DIODES INCORPORATED KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf KBP304G-KBP310G.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MMBT5551Q-7 MMBT5551Q-7 DIODES INCORPORATED MMBT5551Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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MMBT5401Q-7-F MMBT5401Q-7-F DIODES INCORPORATED ds30057.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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MMBT5401-13-F MMBT5401-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 10000pcs.
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DPLS4140E-13 DPLS4140E-13 DIODES INCORPORATED ds31279.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Polarisation: bipolar
Power dissipation: 1W
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 12...300
Kind of package: reel; tape
Case: SOT223
Frequency: 150MHz
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 140V
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BC807-40-13-F BC807-40-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
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BC807-40Q-13-F BC807-40Q-13-F DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BC807-40Q-7-F BC807-40Q-7-F DIODES INCORPORATED BC807-40Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BC807-40W-7 BC807-40W-7 DIODES INCORPORATED BC807-16W_-25W_-40W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
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ULN2004AS16-13 ULN2004AS16-13 DIODES INCORPORATED ULN200xA.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F BC848A-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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BC848B-7-F BC848B-7-F DIODES INCORPORATED ds11108.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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MMBT2222A-13-F MMBT2222A-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222ALP4-7B DIODES INCORPORATED MMBT2222ALP4.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222AQ-7-F MMBT2222AQ-7-F DIODES INCORPORATED ds30041.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
Application: automotive industry
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BC857CQ-7-F BC857CQ-7-F DIODES INCORPORATED BC857CQ.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Frequency: 100...200MHz
Current gain: 420...800
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Pulsed collector current: 0.2A
Application: automotive industry
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BC817-25Q-7-F BC817-25Q-7-F DIODES INCORPORATED BC817-16Q_25Q_40Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BAV21HWF-7 BAV21HWF-7 DIODES INCORPORATED BAV21HWF.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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BAV21HWFQ-7 BAV21HWFQ-7 DIODES INCORPORATED BAV21HWFQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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BAV21WQ-7-F BAV21WQ-7-F DIODES INCORPORATED BAV19W-BAV21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward impulse current: 9A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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BAV21WS-13-F BAV21WS-13-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward impulse current: 9A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
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Мінімальне замовлення: 10000 шт
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ES1J-13-F ES1J-13-F DIODES INCORPORATED ES1J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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MMBT3904FA-7B DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3904FZ-7B DIODES INCORPORATED MMBT3904FZ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3904LP-7B DIODES INCORPORATED ds31835.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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MMBT3904Q-7-F MMBT3904Q-7-F DIODES INCORPORATED MMBT3904Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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SMAJ5.0AQ-13-F SMAJ5.0AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ5.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MCR100-8 MCR100-8 DIODES INCORPORATED MCR100-8.pdf description Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; 0.25A; Igt: 50uA; SOT23; SMD; Ifsm: 9A
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Load current: 0.25A
Gate current: 50µA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
на замовлення 2864 шт:
термін постачання 14-30 дні (днів)
25+18.29 грн
52+8.32 грн
58+7.44 грн
64+6.71 грн
100+5.94 грн
395+2.45 грн
1085+2.31 грн
Мінімальне замовлення: 25 шт
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DSS4160FDB-7 DIODES INCORPORATED DSS4160FDB.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Case: U-DFN2020-6
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
Polarisation: bipolar
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
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MB10F-13 MB10F-13 DIODES INCORPORATED MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 320 шт:
термін постачання 14-30 дні (днів)
11+44.80 грн
17+25.13 грн
25+20.80 грн
50+18.08 грн
100+16.05 грн
129+7.47 грн
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MMBT4401-13-F MMBT4401-13-F DIODES INCORPORATED MMBT4401.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
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MMBT4401T-7-F DIODES INCORPORATED ds30272.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
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SMBJ33AQ-13-F SMBJ33AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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MMBT4403T-7-F DIODES INCORPORATED ds30273.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
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BC847AW-7-F BC847AW-7-F DIODES INCORPORATED BC846AW-BC848CW.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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MMBTA42-13-F MMBTA42-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 10000pcs.
Current gain: 25...40
Frequency: 50MHz
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MMBTA42Q-7-F MMBTA42Q-7-F DIODES INCORPORATED DS_31_MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 25...40
Frequency: 50MHz
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SMBJ5.0AQ-13-F SMBJ5.0AQ-13-F DIODES INCORPORATED Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DPLS350E-13 DPLS350E-13 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Polarisation: bipolar
Pulsed collector current: 5A
Type of transistor: PNP
Current gain: 100...200
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 3A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 50V
Power dissipation: 1W
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BC857BSQ-7-F BC857BSQ-7-F DIODES INCORPORATED ds30373.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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GBJ2010-F DIODES INCORPORATED GBJ20005%7EGBJ2010.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: GBJ
Type of bridge rectifier: single-phase
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SMBJ24AQ-13-F SMBJ24AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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BAW56DW-7-F BAW56DW-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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BAW56DWQ-7-F BAW56DWQ-7-F DIODES INCORPORATED ds30146.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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BAW56HDW-13 BAW56HDW-13 DIODES INCORPORATED BAW56HDW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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RS1MDFQ-13 DIODES INCORPORATED RS1MDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 RS1MEWFQ-7 DIODES INCORPORATED RS1MEWFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 FRS1ME-7 DIODES INCORPORATED FRS1ME.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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FRS1MEQ-7 FRS1MEQ-7 DIODES INCORPORATED FRS1MEQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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DMG2305UX-7 DMG2305UX-7 DIODES INCORPORATED DMG2305UX.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ15AQ-13-F SMBJ15AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DDTC114EUAQ-7-F DDTC114EUAQ-7-F DIODES INCORPORATED ds30321.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 30
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AS78L15RTR-E1 AS78L15RTR-E1 DIODES INCORPORATED AS78Lxx_Aug2013_DS.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: AS78LXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
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AP7361C-33SP-13 AP7361C.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8-EP; SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SO8-EP
Number of channels: 1
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Input voltage: 2.2...6V
Output current: 1A
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AP64502SP-13 AP64502.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Efficiency: 85%
Output voltage: 0.8...40V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 100kHz...2.2MHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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AL9910SP-13 AL9910_A.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8-EP; Ch: 1; PWM,linear dimming; 90%
Operating temperature: -40...85°C
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Efficiency: 90%
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: LED driver
Number of channels: 1
Operating voltage: 15...500V DC
Mounting: SMD
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AP64502QSP-13 AP64502Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 5A; SO8-EP
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Efficiency: 85%
Application: automotive industry
Output voltage: 0.8...40V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 100kHz...2.2MHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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AP64501QSP-13 AP64501Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷39VDC; 5A; SO8-EP
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Efficiency: 85%
Application: automotive industry
Output voltage: 0.8...39V DC
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: DC/DC converter
Frequency: 510...630kHz
Topology: buck
Mounting: SMD
Input voltage: 3.8...40V DC
Output current: 5A
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DXT13003DG-13 DXT13003DG.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 450V; 1.3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 1.3A
Power dissipation: 3W
Case: SOT223
Current gain: 5...40
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Pulsed collector current: 3A
Frequency: 4MHz
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KBP310G KBP3005G%20THRU%20KBP310G%20N1917%20REV.A.pdf kbp302g.pdf KBP304G-KBP310G.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 90A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 90A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MMBT5551Q-7 MMBT5551Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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MMBT5401Q-7-F ds30057.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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MMBT5401-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 10000pcs.
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DPLS4140E-13 ds31279.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 1W; SOT223
Polarisation: bipolar
Power dissipation: 1W
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 12...300
Kind of package: reel; tape
Case: SOT223
Frequency: 150MHz
Collector current: 4A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 140V
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BC807-40-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
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BC807-40Q-13-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BC807-40Q-7-F BC807-40Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BC807-40W-7 BC807-16W_-25W_-40W.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 170...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
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ULN2004AS16-13 ULN200xA.pdf
Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...105°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
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BC848A-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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BC848B-7-F ds11108.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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MMBT2222A-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222ALP4-7B MMBT2222ALP4.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1W; X2-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1W
Case: X2-DFN1006-3
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.8A
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MMBT2222AQ-7-F ds30041.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.8A
Application: automotive industry
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BC857CQ-7-F BC857CQ.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Frequency: 100...200MHz
Current gain: 420...800
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Power dissipation: 0.35W
Pulsed collector current: 0.2A
Application: automotive industry
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BC817-25Q-7-F BC817-16Q_25Q_40Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Application: automotive industry
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BAV21HWF-7 BAV21HWF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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BAV21HWFQ-7 BAV21HWFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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BAV21WQ-7-F BAV19W-BAV21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward impulse current: 9A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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BAV21WS-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.25A; 50ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward impulse current: 9A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. load current: 0.625A
Reverse recovery time: 50ns
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Мінімальне замовлення: 10000 шт
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ES1J-13-F ES1J.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 30ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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MMBT3904FA-7B
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 435mW; X2-DFN0806-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3904FZ-7B MMBT3904FZ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 925mW; X2-DFN0606-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 925mW
Case: X2-DFN0606-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.5A
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MMBT3904LP-7B ds31835.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; X1-DFN1006-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 0.2A
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MMBT3904Q-7-F MMBT3904Q.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
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SMAJ5.0AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ5.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7.25V; 43.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MCR100-8 description MCR100-8.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; 0.25A; Igt: 50uA; SOT23; SMD; Ifsm: 9A
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Load current: 0.25A
Gate current: 50µA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
на замовлення 2864 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+18.29 грн
52+8.32 грн
58+7.44 грн
64+6.71 грн
100+5.94 грн
395+2.45 грн
1085+2.31 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
DSS4160FDB-7 DSS4160FDB.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Case: U-DFN2020-6
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
Polarisation: bipolar
Pulsed collector current: 1.5A
Type of transistor: NPN x2
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
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MB10F-13 MB10F.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 0.8A; Ifsm: 30A; MBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 320 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+44.80 грн
17+25.13 грн
25+20.80 грн
50+18.08 грн
100+16.05 грн
129+7.47 грн
Мінімальне замовлення: 11 шт
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MMBT4401-13-F MMBT4401.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 10000pcs.
Pulsed collector current: 1A
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MMBT4401T-7-F ds30272.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 3000pcs.
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SMBJ33AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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MMBT4403T-7-F ds30273.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT523
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Manufacturer standard package: 3000pcs.
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BC847AW-7-F BC846AW-BC848CW.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Manufacturer standard package: 3000pcs.
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MMBTA42-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 10000pcs.
Current gain: 25...40
Frequency: 50MHz
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MMBTA42Q-7-F DS_31_MMBTA42.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 25...40
Frequency: 50MHz
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SMBJ5.0AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.23V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.23V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DPLS350E-13
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; SOT223
Polarisation: bipolar
Pulsed collector current: 5A
Type of transistor: PNP
Current gain: 100...200
Kind of package: reel; tape
Case: SOT223
Frequency: 100MHz
Collector current: 3A
Mounting: SMD
Manufacturer standard package: 2500pcs.
Collector-emitter voltage: 50V
Power dissipation: 1W
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BC857BSQ-7-F ds30373.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Application: automotive industry
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GBJ2010-F GBJ20005%7EGBJ2010.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 240A
Electrical mounting: THT
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: GBJ
Type of bridge rectifier: single-phase
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SMBJ24AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷30.7V; 15.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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BAW56DW-7-F ds30146.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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BAW56DWQ-7-F ds30146.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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BAW56HDW-13 BAW56HDW.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double x2
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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RS1MDFQ-13 RS1MDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; D-FLAT; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: D-FLAT
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1MEWFQ-7 RS1MEWFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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FRS1ME-7 FRS1ME.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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FRS1MEQ-7 FRS1MEQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO219AA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO219AA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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DMG2305UX-7 DMG2305UX.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.3A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ15AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷19.2V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...19.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DDTC114EUAQ-7-F ds30321.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 30
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AS78L15RTR-E1 AS78Lxx_Aug2013_DS.pdf
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SOT89; SMD; AS78LXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.8V
Output voltage: 15V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: AS78LXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 17.5...30V
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