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B340LB-13-F B340LB-13-F DIODES INCORPORATED B340LA_B.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
на замовлення 408 шт:
термін постачання 14-30 дні (днів)
24+19.14 грн
75+14.90 грн
100+14.31 грн
250+12.19 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
B340BQ-13-F DIODES INCORPORATED B340BQ-B360BQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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B340CE-13 DIODES INCORPORATED B320BE-B345BE-B320CE-B345CE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
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B340Q-13-F DIODES INCORPORATED B320Q-B360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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DMN1004UFV-7 DMN1004UFV-7 DIODES INCORPORATED DMN1004UFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
9+54.70 грн
10+42.49 грн
12+37.16 грн
50+25.73 грн
100+22.09 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
SMAJ30CAQ-13-F SMAJ30CAQ-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP2120N-2.5TRG1 AP2120N-2.5TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
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DMP2123LQ-13 DMP2123LQ-13 DIODES INCORPORATED DMP2123LQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.4A
Gate charge: 7.3nC
On-state resistance: 123mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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DMG6968UDM-7 DMG6968UDM-7 DIODES INCORPORATED DMG6968UDM.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
9+51.05 грн
11+39.45 грн
13+34.37 грн
100+19.55 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
на замовлення 2706 шт:
термін постачання 14-30 дні (днів)
12+41.02 грн
15+29.12 грн
18+24.80 грн
100+14.56 грн
500+10.67 грн
1000+9.57 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DMP2035U-7 DMP2035U-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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DMP2035UVTQ-7 DMP2035UVTQ-7 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
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DMP2035UFDF-7 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFCL-7 DIODES INCORPORATED DMP2035UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DIODES INCORPORATED DMP2035UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UQ-7 DMP2035UQ-7 DIODES INCORPORATED DMP2035U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVT-13 DMP2035UVT-13 DIODES INCORPORATED DMP2035UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UVTQ-13 DMP2035UVTQ-13 DIODES INCORPORATED DMP2035UVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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GBJ2510_HF DIODES INCORPORATED PdfFile_544733.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 34179 шт:
термін постачання 14-30 дні (днів)
15+58.34 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AS431ARTR-G1 AS431ARTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Maximum output current: 0.1A
Reference voltage: 2.5V
на замовлення 315 шт:
термін постачання 14-30 дні (днів)
30+15.50 грн
37+11.51 грн
43+10.07 грн
50+8.55 грн
100+7.03 грн
250+6.69 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ16AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BSR43TA BSR43TA DIODES INCORPORATED BSR43.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
12+39.20 грн
19+22.52 грн
100+14.31 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DXT5551-13 DXT5551-13 DIODES INCORPORATED DXT5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
на замовлення 600 шт:
термін постачання 14-30 дні (днів)
12+40.11 грн
25+17.44 грн
100+13.46 грн
250+11.94 грн
500+10.84 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
B280-13-F B280-13-F DIODES INCORPORATED b270-2100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
B280AE-13 B280AE-13 DIODES INCORPORATED B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
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B280Q-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
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FZT600BTA FZT600BTA DIODES INCORPORATED FZT600A.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of transistor: Darlington
Type of transistor: NPN
Collector current: 2A
Power dissipation: 3W
Pulsed collector current: 4A
Frequency: 150...250MHz
Collector-emitter voltage: 140V
Quantity in set/package: 1000pcs.
Current gain: 5000...100000
Polarisation: bipolar
на замовлення 986 шт:
термін постачання 14-30 дні (днів)
7+70.20 грн
14+31.83 грн
50+25.99 грн
100+23.96 грн
250+22.01 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
ZTX450 ZTX450 DIODES INCORPORATED ZTX450.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
7+74.75 грн
10+43.00 грн
100+29.46 грн
200+26.24 грн
250+25.40 грн
500+22.69 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
ZTX450STZ ZTX450STZ DIODES INCORPORATED ZTX450.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
6+77.49 грн
10+46.39 грн
50+32.84 грн
100+28.61 грн
500+22.52 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FZT689BTA FZT689BTA DIODES INCORPORATED FZT689B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
7+75.67 грн
10+47.66 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
FZT489QTA FZT489QTA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
на замовлення 922 шт:
термін постачання 14-30 дні (днів)
В кошику  од. на суму  грн.
FZT789ATA FZT789ATA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
6+81.13 грн
10+47.07 грн
100+29.88 грн
250+25.73 грн
500+23.36 грн
1000+22.26 грн
Мінімальне замовлення: 6 шт
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FCX789ATA DIODES INCORPORATED FCX789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Current gain: 75...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 8A
Quantity in set/package: 1000pcs.
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FZT489TA DIODES INCORPORATED FZT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 1000pcs.
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FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
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FZT789AQTA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Current gain: 100...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 6A
Quantity in set/package: 1000pcs.
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FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
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FMMT589TA FMMT589TA DIODES INCORPORATED FMMT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 3000pcs.
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DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN4031SSDQ-13 DMN4031SSDQ-13 DIODES INCORPORATED DMN4031SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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AP66300FVBW-13 DIODES INCORPORATED AP66300.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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AP66300QFVBW-13 DIODES INCORPORATED AP66300Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+21.51 грн
Мінімальне замовлення: 3000 шт
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PDS1045-13 DIODES INCORPORATED ds30539.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 150mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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DMN30H4D0L-7 DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
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DMN30H4D0L-13 DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
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DMN30H4D1S-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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DMN30H4D1S-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
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74LVC573AQ20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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74LVC573AT20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
42+10.94 грн
53+8.13 грн
58+7.36 грн
63+6.77 грн
Мінімальне замовлення: 42 шт
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SMBJ45CA-13-F SMBJ45CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
28+16.41 грн
38+11.34 грн
43+10.07 грн
100+7.20 грн
500+6.01 грн
1000+5.59 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
23+20.06 грн
29+14.90 грн
33+13.04 грн
100+8.38 грн
500+6.43 грн
Мінімальне замовлення: 23 шт
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B340LB-13-F B340LA_B.pdf
B340LB-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
на замовлення 408 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
24+19.14 грн
75+14.90 грн
100+14.31 грн
250+12.19 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
B340BQ-13-F B340BQ-B360BQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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B340CE-13 B320BE-B345BE-B320CE-B345CE.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 140pF
Leakage current: 30mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
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B340Q-13-F B320Q-B360Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
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DMN1004UFV-7 DMN1004UFV.pdf
DMN1004UFV-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8; ESD
Case: PowerDI®3333-8
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.1mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain current: 55A
Drain-source voltage: 12V
Kind of package: 7 inch reel; tape
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.70 грн
10+42.49 грн
12+37.16 грн
50+25.73 грн
100+22.09 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
SMAJ30CAQ-13-F SMAJ_ser.pdf
SMAJ30CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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AP2120N-2.5TRG1 AP2120.pdf
AP2120N-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Case: SOT23
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
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DMP2123LQ-13 DMP2123LQ.pdf
DMP2123LQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; Idm: -15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Case: SOT23
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.4A
Gate charge: 7.3nC
On-state resistance: 123mΩ
Power dissipation: 1.4W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
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DMG6968UDM-7 DMG6968UDM.pdf
DMG6968UDM-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 0.85W; SOT26; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.85W
Case: SOT26
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.05 грн
11+39.45 грн
13+34.37 грн
100+19.55 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
DMP2035UVT-7 DMP2035UVT.pdf
DMP2035UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
на замовлення 2706 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+41.02 грн
15+29.12 грн
18+24.80 грн
100+14.56 грн
500+10.67 грн
1000+9.57 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DMP2035U-7 DMP2035U.pdf
DMP2035U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Power dissipation: 0.81W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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DMP2035UVTQ-7 DMP2035UVTQ.pdf
DMP2035UVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -20V
Drain current: -5.7A
Gate charge: 23.1nC
On-state resistance: 62mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Application: automotive industry
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DMP2035UFDF-7 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFCL-7 DMP2035UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2035UFDF-13 DMP2035UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.5A
Pulsed drain current: -40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
DMP2035UQ-7 DMP2035U.pdf
DMP2035UQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2035UVT-13 DMP2035UVT.pdf
DMP2035UVT-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP2035UVTQ-13 DMP2035UVTQ.pdf
DMP2035UVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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GBJ2510_HF PdfFile_544733.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 34179 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+58.34 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
AS431ARTR-G1 AS431.pdf
AS431ARTR-G1
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Maximum output current: 0.1A
Reference voltage: 2.5V
на замовлення 315 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.50 грн
37+11.51 грн
43+10.07 грн
50+8.55 грн
100+7.03 грн
250+6.69 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
SMAJ16AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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BSR43TA BSR43.pdf
BSR43TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1W; SOT89
Quantity in set/package: 1000pcs.
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1W
Current gain: 30...300
Collector-emitter voltage: 80V
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+39.20 грн
19+22.52 грн
100+14.31 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
DXT5551-13 DXT5551.pdf
DXT5551-13
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 1.2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 1.2W
Case: SOT89
Current gain: 30...250
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
на замовлення 600 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+40.11 грн
25+17.44 грн
100+13.46 грн
250+11.94 грн
500+10.84 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
B280-13-F b270-2100.pdf
B280-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 80V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 75pF
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.12 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
B280AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B280AE-13
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 2A; reel,tape
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 70pF
Leakage current: 0.4mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
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B280Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 75pF
Leakage current: 2mA
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 80V
Application: automotive industry
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FZT600BTA FZT600A.pdf
FZT600BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 140V; 2A; 3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of transistor: Darlington
Type of transistor: NPN
Collector current: 2A
Power dissipation: 3W
Pulsed collector current: 4A
Frequency: 150...250MHz
Collector-emitter voltage: 140V
Quantity in set/package: 1000pcs.
Current gain: 5000...100000
Polarisation: bipolar
на замовлення 986 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+70.20 грн
14+31.83 грн
50+25.99 грн
100+23.96 грн
250+22.01 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
ZTX450 description ZTX450.pdf
ZTX450
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 150MHz
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+74.75 грн
10+43.00 грн
100+29.46 грн
200+26.24 грн
250+25.40 грн
500+22.69 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
ZTX450STZ ZTX450.pdf
ZTX450STZ
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Current gain: 15...300
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+77.49 грн
10+46.39 грн
50+32.84 грн
100+28.61 грн
500+22.52 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FZT689BTA FZT689B.pdf
FZT689BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+75.67 грн
10+47.66 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
FZT489QTA FZT489.pdf
FZT489QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 1.2W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Quantity in set/package: 1000pcs.
на замовлення 922 шт:
термін постачання 14-30 дні (днів)
В кошику  од. на суму  грн.
FZT789ATA FZT789A.pdf
FZT789ATA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 1013 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+81.13 грн
10+47.07 грн
100+29.88 грн
250+25.73 грн
500+23.36 грн
1000+22.26 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FCX789ATA FCX789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 2W
Case: SOT89
Current gain: 75...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 8A
Quantity in set/package: 1000pcs.
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FZT489TA FZT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 1000pcs.
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В кошику  од. на суму  грн.
FZT589TA FZT589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
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FZT789AQTA FZT789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Current gain: 100...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 6A
Quantity in set/package: 1000pcs.
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FCX589TA FCX589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 2.3W
Case: SOT89
Current gain: 40...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Quantity in set/package: 1000pcs.
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FMMT589TA FMMT589.pdf
FMMT589TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
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FMMT489TA FMMT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Pulsed collector current: 4A
Quantity in set/package: 3000pcs.
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DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN4031SSDQ-13 DMN4031SSDQ.pdf
DMN4031SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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AP66300FVBW-13 AP66300.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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AP66300QFVBW-13 AP66300Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64A-13-F SMCJ_ser.pdf
SMCJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+21.51 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PDS1045-13 ds30539.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Leakage current: 150mA
Max. forward impulse current: 275A
Kind of package: reel; tape
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DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DMN30H14DLY.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
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DMN30H4D0L-13 DMN30H4D0L.pdf
DMN30H4D0L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
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DMN30H4D1S-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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DMN30H4D1S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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B350B-13-F B320B-B360B_Rev10-2.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
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74LVC573AQ20-13 74LVC573A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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74LVC573AT20-13 74LVC573A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.94 грн
53+8.13 грн
58+7.36 грн
63+6.77 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
SMBJ45CA-13-F SMBJ_ser.pdf
SMBJ45CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.41 грн
38+11.34 грн
43+10.07 грн
100+7.20 грн
500+6.01 грн
1000+5.59 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
SMBJ43CA-13-F SMBJ_ser.pdf
SMBJ43CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+20.06 грн
29+14.90 грн
33+13.04 грн
100+8.38 грн
500+6.43 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
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