Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72158) > Сторінка 554 з 1203
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DDZ27BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 25.62V 500MW SOD323FTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 25.62 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V |
на замовлення 131800 шт: термін постачання 21-31 дні (днів) |
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PI6ULS5V9511BUEX | Diodes Incorporated |
Description: INTERFACE I2C HOT SWAP MSOP-8 T&Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Delay Time: 70ns Number of Channels: 1 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, Accelerator Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Applications: I2C - Hotswap Current - Supply: 2.8mA Data Rate (Max): 400kHz Supplier Device Package: 8-MSOP Capacitance - Input: 7 pF |
на замовлення 1887 шт: термін постачання 21-31 дні (днів) |
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JT3211W0025.000000 | Diodes Incorporated |
Description: XTAL OSC TCXO 25.0000MHZ SMD Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Type: TCXO Frequency: 25 MHz Base Resonator: Crystal |
товару немає в наявності |
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FD1920010 | Diodes Incorporated |
Description: XTAL OSC XO 19.2000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Height - Seated (Max): 0.051" (1.30mm) Frequency: 19.2 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54AW-7-F-2477 | Diodes Incorporated |
Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB1500H-13-F | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Tape & Reel (TR) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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TB1500H-13-F | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Cut Tape (CT) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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TB1500H-13 | Diodes Incorporated |
Description: THYRISTOR 140V 400A DO-214AAPackaging: Cut Tape (CT) Capacitance: 120pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 180V Voltage - Off State: 140V Voltage - On State: 3.5 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A Current - Peak Pulse (8/20µs): 400 A |
на замовлення 1337 шт: термін постачання 21-31 дні (днів) |
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DMP3007SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 90A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3007SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 90A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 2409 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH3002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 7450 шт: термін постачання 21-31 дні (днів) |
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DMNH6042SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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DMNH6042SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 76005 шт: термін постачання 21-31 дні (днів) |
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DMTH8003SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 100A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMTH8003SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V |
на замовлення 11813 шт: термін постачання 21-31 дні (днів) |
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DMTH61M8LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 225A PWRDIPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMTH61M8LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 225A PWRDIPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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DXTN3C60PS-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A POWERDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DXTN3C60PS-13 | Diodes Incorporated |
Description: TRANS NPN 60V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMT30M9LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMT30M9LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
на замовлення 2487 шт: термін постачання 21-31 дні (днів) |
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DMTH41M2SPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH41M2SPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 3.4W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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DMWSH120H90SM4Q | Diodes Incorporated |
Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 6347 шт: термін постачання 21-31 дні (днів) |
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DMN63D8LW-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 380MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 130000 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ33A-13 | Diodes Incorporated |
Description: TVS DIODE 33VWM 53.3VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3732UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3732UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V |
на замовлення 7777 шт: термін постачання 21-31 дні (днів) |
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DMN3732UFB4-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C5V1Q-13-F | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23Tolerance: ±5.88% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C18Q-13-F | Diodes Incorporated |
Description: DIODE ZENER 18V 300MW SOT23Tolerance: ±6.39% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V Qualification: AEC-Q101 |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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SDM10K45-7-F-79 | Diodes Incorporated |
Description: DIODE SCHOTTKY 45V 100MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDM100K30L-7-2477 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 1A SOD323 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 22pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AS331KTR-G1 | Diodes Incorporated |
Description: IC COMPARATOR 1 GEN PUR SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: SOT-23-5 Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AS331KTR-G1 | Diodes Incorporated |
Description: IC COMPARATOR 1 GEN PUR SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: SOT-23-5 Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V |
на замовлення 4193 шт: термін постачання 21-31 дні (днів) |
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AM4406FMTR-G1 | Diodes Incorporated |
Description: IC MOTOR DRIVER 4V-28V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 70mA Interface: On/Off Operating Temperature: -40°C ~ 95°C (TA) Output Configuration: Pre-Driver - Low Side (2) Voltage - Supply: 4V ~ 28V Applications: Fan Controller Supplier Device Package: 8-SOIC Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AM4406FMTR-G1 | Diodes Incorporated |
Description: IC MOTOR DRIVER 4V-28V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 70mA Interface: On/Off Operating Temperature: -40°C ~ 95°C (TA) Output Configuration: Pre-Driver - Low Side (2) Voltage - Supply: 4V ~ 28V Applications: Fan Controller Supplier Device Package: 8-SOIC Motor Type - AC, DC: Brushless DC (BLDC) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DXTN58100CFDB-7 | Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR U-DFN2020-Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 690 mW |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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DXTN3C100PDQ-13 | Diodes Incorporated |
Description: TRANS 2NPN 100V 3A POWERDI5060-8Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.47W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Frequency - Transition: 130MHz Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3951 шт: термін постачання 21-31 дні (днів) |
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DXTC3C100PDQ-13 | Diodes Incorporated |
Description: TRANS NPN/PNP 100V POWERDI5060-8Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.47W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V Frequency - Transition: 130MHz, 100MHz Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 37098 шт: термін постачання 21-31 дні (днів) |
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DXTP3C100PDQ-13 | Diodes Incorporated |
Description: SS Low Sat Transistor PowerDI506Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.76W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V Frequency - Transition: 100MHz Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1481 шт: термін постачання 21-31 дні (днів) |
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FCX619QTA | Diodes Incorporated |
Description: TRANS NPN 50V 3A SOT-89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 165MHz Supplier Device Package: SOT-89-3 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 700 mW Qualification: AEC-Q101 |
на замовлення 56970 шт: термін постачання 21-31 дні (днів) |
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ZXTP19100CZQTA | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR SOT89 T&RPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 142MHz Supplier Device Package: SOT-89-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.1 W Qualification: AEC-Q101 |
на замовлення 107000 шт: термін постачання 21-31 дні (днів) |
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ZXTP19100CZQTA | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR SOT89 T&RPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 142MHz Supplier Device Package: SOT-89-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.1 W Qualification: AEC-Q101 |
на замовлення 107000 шт: термін постачання 21-31 дні (днів) |
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DXTN5820DFDB-7 | Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR U-DFN2020-Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 80MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 690 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DXTN5860DFDB-7 | Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR U-DFN2020-Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 115MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 690 mW |
на замовлення 8998 шт: термін постачання 21-31 дні (днів) |
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DXTN5840CFDB-7 | Diodes Incorporated |
Description: TRANS NPN 40V 5A UDFN2020-3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 150MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 690 mW |
на замовлення 11973 шт: термін постачання 21-31 дні (днів) |
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DXTP03140BFG-7 | Diodes Incorporated |
Description: TRANS PNP 140V 4A POWERDI3Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 120MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1.07 W |
на замовлення 7830 шт: термін постачання 21-31 дні (днів) |
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DXTP03100BFG-7 | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 125MHz Supplier Device Package: PowerDI3333-8 (SWP) Type UX Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.07 W |
на замовлення 11980 шт: термін постачання 21-31 дні (днів) |
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1N4448HWSQ-7-F | Diodes Incorporated |
Description: DIODE STANDARD 80V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150 Voltage Coupled to Current - Reverse Leakage @ Vr: 80 Current - Reverse Leakage @ Vr: 100 nA @ 80 V Qualification: AEC-Q101 |
на замовлення 671 шт: термін постачання 21-31 дні (днів) |
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DFLT20A-7 | Diodes Incorporated |
Description: TVS DIODE 20VWM 32.4VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.94A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 225W Power Line Protection: No |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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DFLT20A-7 | Diodes Incorporated |
Description: TVS DIODE 20VWM 32.4VC PWRDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.94A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 225W Power Line Protection: No |
на замовлення 41298 шт: термін постачання 21-31 дні (днів) |
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DFLT28A-7 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.96A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 225W Power Line Protection: No |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DFLT28A-7 | Diodes Incorporated |
Description: TVS DIODE 28VWM 45.4VC PWRDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.96A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 225W Power Line Protection: No |
на замовлення 10525 шт: термін постачання 21-31 дні (днів) |
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DFLT8V5A-7 | Diodes Incorporated |
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.6A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 225W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFLT8V5A-7 | Diodes Incorporated |
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.6A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: PowerDI™ 123 Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 225W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFLZ5V6Q-7 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 1W POWERDI 123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: PowerDI™ 123 Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 2 Current - Reverse Leakage @ Vr: 10 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DFLZ5V6Q-7 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 1W POWERDI 123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: PowerDI™ 123 Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 2 Current - Reverse Leakage @ Vr: 10 µA @ 2 V Qualification: AEC-Q101 |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
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DFLZ13Q-7 | Diodes Incorporated |
Description: DIODE ZENER 13V 1W POWERDI 123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: PowerDI™ 123 Grade: Automotive Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 10 Current - Reverse Leakage @ Vr: 2 µA @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| DDZ27BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
Description: DIODE ZENER 25.62V 500MW SOD323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 70 nA @ 23.7 V
на замовлення 131800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 28+ | 10.80 грн |
| 100+ | 5.26 грн |
| 500+ | 4.12 грн |
| 1000+ | 2.86 грн |
| PI6ULS5V9511BUEX |
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Виробник: Diodes Incorporated
Description: INTERFACE I2C HOT SWAP MSOP-8 T&
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Delay Time: 70ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, Accelerator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C - Hotswap
Current - Supply: 2.8mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 7 pF
Description: INTERFACE I2C HOT SWAP MSOP-8 T&
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Delay Time: 70ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, Accelerator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C - Hotswap
Current - Supply: 2.8mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 7 pF
на замовлення 1887 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.99 грн |
| 10+ | 51.00 грн |
| 25+ | 46.02 грн |
| 100+ | 38.10 грн |
| 250+ | 35.67 грн |
| 500+ | 34.21 грн |
| 1000+ | 32.81 грн |
| JT3211W0025.000000 |
Виробник: Diodes Incorporated
Description: XTAL OSC TCXO 25.0000MHZ SMD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Type: TCXO
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC TCXO 25.0000MHZ SMD
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Type: TCXO
Frequency: 25 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| FD1920010 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 19.2000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 19.2 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 19.2000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 19.2 MHz
Base Resonator: Crystal
товару немає в наявності
В кошику
од. на суму грн.
| BAT54AW-7-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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В кошику
од. на суму грн.
| TB1500H-13-F |
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Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.11 грн |
| TB1500H-13-F |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.61 грн |
| 10+ | 76.42 грн |
| 100+ | 51.23 грн |
| 500+ | 37.94 грн |
| 1000+ | 34.69 грн |
| TB1500H-13 |
![]() |
Виробник: Diodes Incorporated
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Description: THYRISTOR 140V 400A DO-214AA
Packaging: Cut Tape (CT)
Capacitance: 120pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 3.5 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
на замовлення 1337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.57 грн |
| 10+ | 62.47 грн |
| 100+ | 43.67 грн |
| 500+ | 33.08 грн |
| 1000+ | 30.49 грн |
| DMP3007SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP3007SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 90A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 2409 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.30 грн |
| 10+ | 51.97 грн |
| 100+ | 35.98 грн |
| 500+ | 28.21 грн |
| 1000+ | 24.01 грн |
| DMTH3002LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 36.49 грн |
| 5000+ | 32.98 грн |
| DMTH3002LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
Qualification: AEC-Q101
на замовлення 7450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 69.75 грн |
| 100+ | 48.92 грн |
| 500+ | 38.75 грн |
| 1000+ | 35.48 грн |
| DMNH6042SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.90 грн |
| 5000+ | 14.98 грн |
| 7500+ | 14.32 грн |
| 12500+ | 12.74 грн |
| DMNH6042SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
на замовлення 76005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.42 грн |
| 10+ | 41.40 грн |
| 100+ | 27.12 грн |
| 500+ | 19.64 грн |
| 1000+ | 17.77 грн |
| DMTH8003SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 50.89 грн |
| DMTH8003SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
Description: MOSFET N-CH 80V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
на замовлення 11813 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.39 грн |
| 10+ | 97.12 грн |
| 100+ | 70.41 грн |
| 500+ | 56.30 грн |
| DMTH61M8LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
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| DMTH61M8LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
Description: MOSFET N-CH 60V 225A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.97 грн |
| 10+ | 143.09 грн |
| 100+ | 99.17 грн |
| 500+ | 75.46 грн |
| 1000+ | 69.81 грн |
| DXTN3C60PS-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
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| DXTN3C60PS-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
Description: TRANS NPN 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.25 W
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| DMT30M9LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
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| DMT30M9LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
на замовлення 2487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.22 грн |
| 10+ | 156.82 грн |
| 100+ | 109.38 грн |
| 500+ | 83.64 грн |
| 1000+ | 83.41 грн |
| DMTH41M2SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 83.30 грн |
| DMTH41M2SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.36 грн |
| 10+ | 154.04 грн |
| 100+ | 122.63 грн |
| 500+ | 97.38 грн |
| 1000+ | 82.62 грн |
| DMWSH120H90SM4Q |
![]() |
Виробник: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 6347 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 912.75 грн |
| 30+ | 603.86 грн |
| 120+ | 459.77 грн |
| DMN63D8LW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.89 грн |
| 20000+ | 1.60 грн |
| 3.0SMCJ33A-13 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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| DMN3732UFB4-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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| DMN3732UFB4-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
на замовлення 7777 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.03 грн |
| 22+ | 13.80 грн |
| 100+ | 6.72 грн |
| 500+ | 5.26 грн |
| 1000+ | 3.65 грн |
| 2000+ | 3.17 грн |
| 5000+ | 2.89 грн |
| DMN3732UFB4-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
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| BZX84C5V1Q-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 300MW SOT23
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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| BZX84C18Q-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 300MW SOT23
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.40 грн |
| 20000+ | 2.27 грн |
| 30000+ | 2.02 грн |
| 50000+ | 1.82 грн |
| SDM10K45-7-F-79 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 45V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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| SDM100K30L-7-2477 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 30V 1A SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 485 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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| AS331KTR-G1 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.22 грн |
| AS331KTR-G1 |
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Виробник: Diodes Incorporated
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
на замовлення 4193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.58 грн |
| 30+ | 10.20 грн |
| 34+ | 8.97 грн |
| 100+ | 7.20 грн |
| 250+ | 6.62 грн |
| 500+ | 6.26 грн |
| 1000+ | 5.88 грн |
| AM4406FMTR-G1 |
Виробник: Diodes Incorporated
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
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| AM4406FMTR-G1 |
Виробник: Diodes Incorporated
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 4V-28V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 70mA
Interface: On/Off
Operating Temperature: -40°C ~ 95°C (TA)
Output Configuration: Pre-Driver - Low Side (2)
Voltage - Supply: 4V ~ 28V
Applications: Fan Controller
Supplier Device Package: 8-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
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од. на суму грн.
| DXTN58100CFDB-7 |
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Виробник: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
на замовлення 690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.94 грн |
| 10+ | 31.50 грн |
| 100+ | 21.91 грн |
| 500+ | 16.05 грн |
| DXTN3C100PDQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN 100V 3A POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 100V 3A POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.77 грн |
| 10+ | 49.65 грн |
| 100+ | 32.75 грн |
| 500+ | 23.90 грн |
| 1000+ | 21.70 грн |
| 2500+ | 19.32 грн |
| DXTC3C100PDQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 100V POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Frequency - Transition: 130MHz, 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 100V POWERDI5060-8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Frequency - Transition: 130MHz, 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 37098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.33 грн |
| 10+ | 50.32 грн |
| 100+ | 33.17 грн |
| 500+ | 24.22 грн |
| 1000+ | 22.00 грн |
| 2500+ | 19.59 грн |
| 5000+ | 17.81 грн |
| 10000+ | 16.58 грн |
| DXTP3C100PDQ-13 |
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Виробник: Diodes Incorporated
Description: SS Low Sat Transistor PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.76W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Description: SS Low Sat Transistor PowerDI506
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.76W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.19 грн |
| 10+ | 49.72 грн |
| 100+ | 34.42 грн |
| 500+ | 26.98 грн |
| 1000+ | 22.97 грн |
| FCX619QTA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2.75A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Qualification: AEC-Q101
на замовлення 56970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.32 грн |
| 10+ | 46.42 грн |
| 100+ | 30.46 грн |
| 500+ | 22.13 грн |
| ZXTP19100CZQTA |
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Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
на замовлення 107000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 28.45 грн |
| 2000+ | 25.79 грн |
| 5000+ | 24.56 грн |
| 10000+ | 21.99 грн |
| 25000+ | 21.94 грн |
| ZXTP19100CZQTA |
![]() |
Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.1 W
Qualification: AEC-Q101
на замовлення 107000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.64 грн |
| 10+ | 51.00 грн |
| 100+ | 39.67 грн |
| 500+ | 31.56 грн |
| DXTN5820DFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.38 грн |
| 10+ | 30.22 грн |
| 100+ | 21.01 грн |
| 500+ | 15.40 грн |
| 1000+ | 12.52 грн |
| DXTN5860DFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 115MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 690 mW
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 115MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 690 mW
на замовлення 8998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.85 грн |
| 10+ | 33.97 грн |
| 100+ | 21.94 грн |
| 500+ | 15.74 грн |
| 1000+ | 14.17 грн |
| DXTN5840CFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 40V 5A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 690 mW
Description: TRANS NPN 40V 5A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 30mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 690 mW
на замовлення 11973 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.74 грн |
| 10+ | 32.25 грн |
| 100+ | 20.80 грн |
| 500+ | 14.92 грн |
| 1000+ | 13.43 грн |
| DXTP03140BFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.07 W
Description: TRANS PNP 140V 4A POWERDI3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.07 W
на замовлення 7830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.29 грн |
| 10+ | 32.92 грн |
| 100+ | 21.30 грн |
| 500+ | 15.29 грн |
| 1000+ | 13.78 грн |
| DXTP03100BFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.07 W
на замовлення 11980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.28 грн |
| 10+ | 34.57 грн |
| 100+ | 23.92 грн |
| 500+ | 18.76 грн |
| 1000+ | 15.97 грн |
| 1N4448HWSQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
на замовлення 671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 31+ | 9.75 грн |
| 100+ | 6.04 грн |
| 500+ | 4.15 грн |
| DFLT20A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.81 грн |
| 6000+ | 8.61 грн |
| 9000+ | 8.19 грн |
| 15000+ | 7.24 грн |
| 21000+ | 6.97 грн |
| 30000+ | 6.72 грн |
| DFLT20A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 20VWM 32.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 225W
Power Line Protection: No
на замовлення 41298 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 12+ | 25.72 грн |
| 100+ | 16.41 грн |
| 500+ | 11.63 грн |
| 1000+ | 10.41 грн |
| DFLT28A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.81 грн |
| 6000+ | 8.61 грн |
| 9000+ | 8.19 грн |
| DFLT28A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.96A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 225W
Power Line Protection: No
на замовлення 10525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 12+ | 25.72 грн |
| 100+ | 16.41 грн |
| 500+ | 11.63 грн |
| 1000+ | 10.41 грн |
| DFLT8V5A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DFLT8V5A-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
Description: TVS DIODE 8.5VWM 14.4V PWRDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: PowerDI™ 123
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 225W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DFLZ5V6Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DFLZ5V6Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 1W POWERDI 123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
на замовлення 846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.29 грн |
| 11+ | 28.87 грн |
| 100+ | 18.49 грн |
| 500+ | 13.16 грн |
| DFLZ13Q-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE ZENER 13V 1W POWERDI 123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: PowerDI™ 123
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 10
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Qualification: AEC-Q101
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од. на суму грн.



















